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    TRANSISTOR MARKING CODE EY Search Results

    TRANSISTOR MARKING CODE EY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR MARKING CODE EY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor ey

    Abstract: sot-23 EY KTC1298 transistor marking code EY KTC3265 NPN Silicon Epitaxial Planar Transistor EY transistor npn transistor Marking EY
    Text: BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor FEATURES KTC3265 Pb z High DC current gain: hFE:100-320 z Low saturation voltage. z Suitable for driver stage of small motor. z Complementary to KTC1298. z Small package.


    Original     		PDF KTC3265 KTC1298. OT-23 BL/SSSTC109 transistor ey sot-23 EY KTC1298 transistor marking code EY KTC3265 NPN Silicon Epitaxial Planar Transistor EY transistor npn transistor Marking EY

    MOTOROLA DATE CODE transistor

    Abstract: motorola surface mount marking code MSB709-RTI marking code motorola ic 318D-03 MSB709 MSB709-RT1 MSB709-ST1 marking code ER transistor
    Text: Order this dats sheet by MSB709-RTl/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MSB709-RTI* PNP Silicon General Purpose Amplifier Transistor MSB709=STI This PNP Silicon Epitaxial Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-59 package which is designed for low power


    Original     		PDF MSB709-RTl/D MSB709-RTI* MSB709 SC-59 inch/3000 inch/10 318D-03, MK145BP, MOTOROLA DATE CODE transistor motorola surface mount marking code MSB709-RTI marking code motorola ic 318D-03 MSB709-RT1 MSB709-ST1 marking code ER transistor

    T flip flop IC

    Abstract: motorola 68hc11 motorola cm 340 a transistor data sheet IC 74hc05 reset circuit 68HC11 74HC05 MAX6314 MAX6315 MAX811
    Text: 19-1090; Rev 0; 6/96 68HC11/Bidirectional-Compatible µP Reset Circuit _Applications _Features ♦ Small SOT143 Package ♦ RESET Output Simplifies Interface to Bidirectional Reset I/Os ♦ Precision Factory-Set VCC Reset Thresholds:


    Original     		PDF 68HC11/Bidirectional-Compatible OT143 100mV 140ms, 1120ms MAX811 MAX6314 T flip flop IC motorola 68hc11 motorola cm 340 a transistor data sheet IC 74hc05 reset circuit 68HC11 74HC05 MAX6314 MAX6315 MAX811

    transistor marking code EY

    Abstract: T flip flop IC 68HC11 74HC05 MAX6314 MAX6315 MAX811 MAX6314US30D1
    Text: 19-1090; Rev 1; 1/99 68HC11/Bidirectional-Compatible µP Reset Circuit Features The MAX6314 low-power CMOS microprocessor µP supervisory circuit is designed to monitor power supplies in µP and digital systems. The MAX6314’s RESET output is bidirectional, allowing it to be directly


    Original     		PDF 68HC11/Bidirectional-Compatible MAX6314 68HC11. OT143 transistor marking code EY T flip flop IC 68HC11 74HC05 MAX6315 MAX811 MAX6314US30D1

    phototransistor 650 nm

    Abstract: No abstract text available
    Text: SMT Multi TOPLED Lead Pb Free Product - RoHS Compliant SFH 331 Wesentliche Merkmale Features • SMT-Gehäuse mit rotem Sender (635 nm) und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar


    Original     		PDF 331-JK Q65110A2821 phototransistor 650 nm

    transistor d-331

    Abstract: No abstract text available
    Text: SMT Multi TOPLED Lead Pb Free Product - RoHS Compliant SFH 331 Wesentliche Merkmale Features • SMT-Gehäuse mit rotem Sender (635 nm) und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar


    Original     		PDF 331-JK Q65110A2821 transistor d-331

    Untitled

    Abstract: No abstract text available
    Text: SMT Multi TOPLED Lead Pb Free Product - RoHS Compliant SFH 331 Wesentliche Merkmale Features • SMT-Gehäuse mit rotem Sender (635 nm) und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar


    Original     		PDF

    PAM3101DAB

    Abstract: PAM3101DAB180 PAM3101AAA250 PAM3101DAB300 P3101E PAM3101DAB250 OT89-5 capacitor a475 P3101I PAM3101DAB280
    Text: PAM3101 300mA High PSRR Low Dropout CMOS Linear Regulator Features General Description n Low Dropout Voltage: 180mV@300mA V O=3.3V n Output Voltage Accuracy within ±2% n Quiescent Current : 65 A Typ. n High PSRR: 70dB@1kHz n Excellent Line and Load Regulation


    Original     		PDF PAM3101 300mA 180mV 300mA OT-23 OT-89 PAM3101 SC70-3L PAM3101DAB PAM3101DAB180 PAM3101AAA250 PAM3101DAB300 P3101E PAM3101DAB250 OT89-5 capacitor a475 P3101I PAM3101DAB280

    phototransistor 650 nm

    Abstract: phototransistor peak 550 nm
    Text: SMT Multi TOPLED Lead Pb Free Product - RoHS Compliant SFH 331 Wesentliche Merkmale Features • SMT-Gehäuse mit rotem Sender (635 nm) und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar


    Original     		PDF 331-JK Q65110A2821 2006-0y phototransistor 650 nm phototransistor peak 550 nm

    68HC11

    Abstract: MAX6314 MAX6314US45D1-T MAX6314US46D1-T MAX6314US47D1-T MAX6314US48D1-T MAX6314US49D1-T MAX6314US50D1-T MAX6315 MAX811
    Text: 19-1090; Rev 2; 12/05 68HC11/Bidirectional-Compatible µP Reset Circuit The MAX6314 low-power CMOS microprocessor µP supervisory circuit is designed to monitor power supplies in µP and digital systems. The MAX6314’s RESET output is bidirectional, allowing it to be directly


    Original     		PDF 68HC11/Bidirectional-Compatible MAX6314 68HC11. 68HC11 MAX6314US45D1-T MAX6314US46D1-T MAX6314US47D1-T MAX6314US48D1-T MAX6314US49D1-T MAX6314US50D1-T MAX6315 MAX811

    74HC0

    Abstract: 68HC11 MAX6314 MAX6314US45D1-T MAX6314US46D1-T MAX6314US47D1-T MAX6314US48D1-T MAX6314US49D1-T MAX6314US50D1-T MAX6315
    Text: 19-1090; Rev 2; 12/05 68HC11/Bidirectional-Compatible µP Reset Circuit The MAX6314 low-power CMOS microprocessor µP supervisory circuit is designed to monitor power supplies in µP and digital systems. The MAX6314’s RESET output is bidirectional, allowing it to be directly


    Original     		PDF 68HC11/Bidirectional-Compatible MAX6314 68HC11. 74HC0 68HC11 MAX6314US45D1-T MAX6314US46D1-T MAX6314US47D1-T MAX6314US48D1-T MAX6314US49D1-T MAX6314US50D1-T MAX6315

    MC 3041 opto

    Abstract: 4N47A 548D 4N48U JANTXV 4N49 JANTXJANTXV 4N49U JANTX JANTXV 3041 OPTO 4N49 opto 4N47U JANTX federal isolator
    Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 8 September 2001. MIL-PRF-19500/548D 8 June 2001 SUPERSEDING MIL-PRF-19500/548C 10 October 1997 PERFORMANCE SPECIFICATION COUPLER, OPTO ELECTRONIC, SEMICONDUCTOR DEVICE, SOLID STATE


    Original     		PDF MIL-PRF-19500/548D MIL-PRF-19500/548C 4N47A, 4N48A, 4N49A, 4N47U, 4N48U, 4N49U MC 3041 opto 4N47A 548D 4N48U JANTXV 4N49 JANTXJANTXV 4N49U JANTX JANTXV 3041 OPTO 4N49 opto 4N47U JANTX federal isolator

    phototransistor 650 nm

    Abstract: Q62702-P1634 fototransistor led c 331 transistor transistor d 331 331 transistor
    Text: SMT Multi TOPLED SFH 331 Wesentliche Merkmale • SMT-Gehäuse mit rotem Sender 635 nm und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar • Geeignet für IR-Reflow Löten Features


    Original     		PDF Q62702-P1634 OHF01924 GPL06924 phototransistor 650 nm Q62702-P1634 fototransistor led c 331 transistor transistor d 331 331 transistor

    c 331 transistor

    Abstract: transistor d 331 331 transistor fototransistor led phototransistor 650 nm d 331 TRANSISTOR equivalent GPL06924 Q62702-P1634 switching transistor 331 transistor C 331
    Text: SMT Multi TOPLED SFH 331 3.0 2.6 2.3 2.1 0.9 0.7 3 C C E 0.1 typ 1.1 0.5 3.4 3.0 A 3.7 3.3 2 2.4 0.8 0.6 2.1 1.7 1 4 0.18 0.12 Package marking Emission color : super-red 0.6 0.4 GPL06924 Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.


    Original     		PDF GPL06924 Q62702-P1634 IPCE/IPCE25o OHF00871 OHF01530 OHF01924 c 331 transistor transistor d 331 331 transistor fototransistor led phototransistor 650 nm d 331 TRANSISTOR equivalent GPL06924 Q62702-P1634 switching transistor 331 transistor C 331

    Untitled

    Abstract: No abstract text available
    Text: LD6911 1/1/2007 300mA, Low Noise, Ultra-Fast CMOS LDO Regulator REV: 00a General Description Features The LD6911 is a micropower linear regulator, featuring z Shutdown current <1 A low-noise, low-dropout and high ripple rejection ration. The z Ultra-Fast Response in Load Transient


    Original     		PDF LD6911 300mA, LD6911 300mA. LD6911-DS-00a,

    transistor h 331

    Abstract: c 331 transistor 331 transistor switching transistor 331 phototransistor 650 nm transistor 331 d 331 Transistor Q62702-P1634 phototransistor 550 nm phototransistor peak 550 nm
    Text: SMT Multi TOPLED SFH 331 Wesentliche Merkmale • SMT-Gehäuse mit rotem Sender 635 nm und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar • Geeignet für IR-Reflow Löten Features


    Original     		PDF 331-JK Q62702-P1634 GPLY6924 transistor h 331 c 331 transistor 331 transistor switching transistor 331 phototransistor 650 nm transistor 331 d 331 Transistor Q62702-P1634 phototransistor 550 nm phototransistor peak 550 nm

    AS1112

    Abstract: S111 dc05 display AS1112C
    Text: Datas h eet A S111 2 1 6- C h a n n e l L E D D ri v er w it h D o t Co rr e c ti o n a n d G r ey s c a le P W M 1 General Description 2 Key Features The AS1112 is a 16-channel, constant current-sink LED driver. Each of the 16 channels can be individually adjusted by 4096-step


    Original     		PDF AS1112 16-channel, 4096-step 64-step 100mA com/LED-Driver-ICs/AS1112 S111 dc05 display AS1112C

    Untitled

    Abstract: No abstract text available
    Text: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter SFH 495 P SFH 4552 SFH 495 P SFH 4552 Wesentliche Merkmale • Stimulierter Emitter mit sehr hohem Wirkungsgrad • Laserdiode in diffusem Gehäuse • Besonders geeignet für Impulsbetrieb bei hohen Strömen


    Original     		PDF GEX06971 GEX06630

    Untitled

    Abstract: No abstract text available
    Text: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter 5.0 4.2 Anode 5.9 5.5 ø5.1 ø4.8 2.54 mm spacing 0.6 0.4 0.8 0.4 29 27 SFH 495 P SFH 4552 3.85 3.35 0.6 0.4 Area not flat fex06971 1.8 1.2 Chip position GEX06971 Area not flat 29.5 27.5 Cathode Diode Collector (Transistor)


    Original     		PDF GEX06971 GEX06630 OHF00328 OHF00329 OHF00330 OHF00441

    transistor 495

    Abstract: GEX06630 GEX06971 Q62702-P5054 OHF00328 SFH495P
    Text: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter SFH 495 P SFH 4552 SFH 495 P SFH 4552 Wesentliche Merkmale Features • Stimulierter Emitter mit sehr hohem Wirkungsgrad • Laserdiode in diffusem Gehäuse • Besonders geeignet für Impulsbetrieb bei hohen Strömen


    Original     		PDF GEX06971 GEX06630 transistor 495 GEX06630 GEX06971 Q62702-P5054 OHF00328 SFH495P

    80 ESP 12

    Abstract: GEX06630 GEX06971 Q62702-P5054 Q62703-Q7891 OHF00329 transistor sr 61
    Text: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter 5.0 4.2 Anode 5.9 5.5 ø5.1 ø4.8 2.54 mm spacing 0.6 0.4 0.8 0.4 29 27 SFH 495 P SFH 4552 3.85 3.35 0.6 0.4 Area not flat fex06971 1.8 1.2 Chip position GEX06971 Area not flat 29.5 27.5 Cathode Diode Collector (Transistor)


    Original     		PDF fex06971 GEX06971 feo06652 GEX06630 OHF00328 OHF00329 OHF00330 OHF00441 80 ESP 12 GEX06630 GEX06971 Q62702-P5054 Q62703-Q7891 OHF00329 transistor sr 61

    2n7226

    Abstract: transistor substitution chart 2N7224 2N7224U 2N7225 2N7225U 2N7227 2N7227U 2N7228 2N7228U
    Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 21 September 1996 IINCH-POUND MIL-PRF-19500/592C 21 June 1996 SUPERSEDING MIL-S-19500/592B 31 January 1991 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT TRANSISTOR, N-CHANNEL,


    Original     		PDF MIL-PRF-19500/592C MIL-S-19500/592B 2N7224, 2N7225, 2N7227, 2N7228, 2N7224U, 2N7225U, 2N7227U, 2N7228U 2n7226 transistor substitution chart 2N7224 2N7224U 2N7225 2N7225U 2N7227 2N7227U 2N7228

    fototransistor BPW 39

    Abstract: fototransistor BPX 81 opto P180 marking s4 diode smt SFH 300-3/4 datasheet OSRAM IR emitter IRL P3596 foto transistor SFH 229 foto sensor
    Text: SI-FOTODETEKTOREN, OPTISCHE SENSOREN UND IR-LUMINESZENZDIODEN SILICON PHOTODETECTORS, OPTICAL SENSORS AND INFRARED EMITTERS SICHERHEITSHINWEISE SAFETY INSTRUCTIONS Osram Opto Semiconductor IRED erreichen mit ihrer hohen Strahlungsleistung heute z. T. bereits die Helligkeit von Glühlampen und können die Grenzen der Klasse 1 nach IEC 825.1 bzw.


    Original     		PDF EN60825-1 GETY6091 GPLY6899 GPLY6880 fototransistor BPW 39 fototransistor BPX 81 opto P180 marking s4 diode smt SFH 300-3/4 datasheet OSRAM IR emitter IRL P3596 foto transistor SFH 229 foto sensor

    transistor 495

    Abstract: No abstract text available
    Text: SIEMENS GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter SFH 495 P SFH 4552 5.9 5.5 0.6 0.4 GEX06971 Area not flat 5-9. 5.5 'M p ' 0.6 0.4 Cathode Diode GEX06630 Collector (Transistor) Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.


    OCR Scan     		PDF GEX06971 GEX06630 transistor 495