ATC100B101JT500XT
Abstract: T491C105K050AT NIPPON CAPACITORS dvbt A114 A115 AN1955 C101 JESD22 MRFE6P3300HR3
Text: Freescale Semiconductor Technical Data Document Number: MRFE6P3300H Rev. 0, 5/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRFE6P3300HR3 MRFE6P3300HR5 Designed for broadband commercial and industrial applications with
|
Original
|
MRFE6P3300H
MRFE6P3300HR3
MRFE6P3300HR5
MRFE6P3300HR3
ATC100B101JT500XT
T491C105K050AT
NIPPON CAPACITORS
dvbt
A114
A115
AN1955
C101
JESD22
|
PDF
|
ATC100B102JP50XT
Abstract: nippon capacitors JESD22 MRF6P9220HR3 A114 AN1955 ATC100B101JP500XT Nippon chemi
Text: MRF6P9220HR3 replaced by MRFE6P9220HR3. Refer to Device Migration PCN12895 for more details. RF Power Field Effect Transistor MRF6P9220HR3 N - Channel Enhancement - Mode Lateral MOSFET LIFETIME BUY Designed for broadband commercial and industrial applications with
|
Original
|
MRF6P9220HR3
MRFE6P9220HR3.
PCN12895
MRF6P9220HR3
20ers,
MRF6P9220H
ATC100B102JP50XT
nippon capacitors
JESD22
A114
AN1955
ATC100B101JP500XT
Nippon chemi
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Document Number: MRF6P9220H Rev. 3.1, 12/2008 Freescale Semiconductor Technical Data MRF6P9220HR3 replaced by MRFE6P9220HR3. Refer to Device Migration PCN12895 for more details. RF Power Field Effect Transistor MRF6P9220HR3 Designed for broadband commercial and industrial applications with
|
Original
|
MRF6P9220H
MRF6P9220HR3
MRFE6P9220HR3.
PCN12895
MRF6P9220HR3
|
PDF
|
Chemi-Con DATE CODES
Abstract: chemi-con date code MRFE6P9220HR3 NIPPON CAPACITORS ATC100B101JT500XT A114 AN1955 JESD22 MRF6P9220HR3 Nippon chemi
Text: Document Number: MRF6P9220H Rev. 3.1, 12/2008 Freescale Semiconductor Technical Data MRF6P9220HR3 replaced by MRFE6P9220HR3. Refer to Device Migration PCN12895 for more details. RF Power Field Effect Transistor MRF6P9220HR3 Designed for broadband commercial and industrial applications with
|
Original
|
MRF6P9220H
MRF6P9220HR3
MRFE6P9220HR3.
PCN12895
MRF6P9220HR3
Chemi-Con DATE CODES
chemi-con date code
MRFE6P9220HR3
NIPPON CAPACITORS
ATC100B101JT500XT
A114
AN1955
JESD22
Nippon chemi
|
PDF
|
Chemi-Con DATE CODES
Abstract: transistor c 5287 MRF5S9150HS T491C105K0 ATC100B220JT500XT NIPPON CAPACITORS AN1955 ATC100B470JT500XT GX-0300-55-22 JESD22-A114
Text: Freescale Semiconductor Technical Data Document Number: MRF5S9150H-1 Rev. 2, 12/2009 RF Power Field Effect Transistor MRF5S9150HR3 Designed for N-CDMA base station applications with frequencies from 869 to 960 MHz. Suitable for multicarrier amplifier applications.
|
Original
|
MRF5S9150H-1
MRF5S9150HR3
IS-95
Chemi-Con DATE CODES
transistor c 5287
MRF5S9150HS
T491C105K0
ATC100B220JT500XT
NIPPON CAPACITORS
AN1955
ATC100B470JT500XT
GX-0300-55-22
JESD22-A114
|
PDF
|
nippon capacitors
Abstract: Nippon chemi
Text: Document Number: MRF6P9220H Rev. 3, 8/2008 Freescale Semiconductor Technical Data MRF6P9220HR3 replaced by MRFE6P9220HR3. Refer to Device Migration PCN12895 for more details. RF Power Field Effect Transistor MRF6P9220HR3 Designed for broadband commercial and industrial applications with
|
Original
|
MRF6P9220HR3
MRFE6P9220HR3.
PCN12895
MRF6P9220H
MRF6P9220HR3
MRF6P9220H
nippon capacitors
Nippon chemi
|
PDF
|
transistor c 5287
Abstract: NIPPON CAPACITORS A114 A115 AN1955 ATC100B470JT500XT C101 JESD22 MRF5S9150HR3 d 5287 transistor
Text: Document Number: MRF5S9150H - 1 Rev. 2, 3/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5S9150HR3 LIFETIME BUY Designed for N - CDMA base station applications with frequencies from 869 to 960 MHz. Suitable for multicarrier amplifier applications.
|
Original
|
MRF5S9150H
MRF5S9150HR3
MRF5S9150H-1
transistor c 5287
NIPPON CAPACITORS
A114
A115
AN1955
ATC100B470JT500XT
C101
JESD22
MRF5S9150HR3
d 5287 transistor
|
PDF
|
GRM55DR61H106KA88B
Abstract: 2508051107Y0 NIPPON CAPACITORS A114 A115 AN1955 C101 JESD22 MRF6P23190HR6 J3001
Text: Freescale Semiconductor Technical Data Document Number: MRF6P23190H Rev. 2, 3/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 2300 to 2400 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications.
|
Original
|
MRF6P23190H
MRF6P23190HR6
GRM55DR61H106KA88B
2508051107Y0
NIPPON CAPACITORS
A114
A115
AN1955
C101
JESD22
MRF6P23190HR6
J3001
|
PDF
|
UT-141A-TP
Abstract: NIPPON CAPACITORS UT141A-TP MRFE6P3300H 863MHz dvbt 250GX-0300-55-22 AN1955 CDR33BX104AKYS JESD22-A114
Text: Freescale Semiconductor Technical Data Document Number: MRFE6P3300H Rev. 2, 12/2009 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance
|
Original
|
MRFE6P3300H
MRFE6P3300HR3
UT-141A-TP
NIPPON CAPACITORS
UT141A-TP
MRFE6P3300H
863MHz
dvbt
250GX-0300-55-22
AN1955
CDR33BX104AKYS
JESD22-A114
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF6P3300H Rev. 2, 10/2008 MRF6P3300HR3/HR5 replaced by MRFE6P3300HR3/HR5. Refer to Device Migration PCN12895 for more details. RF Power Field Effect Transistor MRF6P3300HR3 MRF6P3300HR5 Designed for broadband commercial and industrial applications with fre-
|
Original
|
MRF6P3300H
MRF6P3300HR3/HR5
MRFE6P3300HR3/HR5.
PCN12895
MRF6P3300HR3
MRF6P3300HR5
MRF6P3300HR3
|
PDF
|
NIPPON CAPACITORS
Abstract: A114 A115 AN1955 ATC100B470JT500XT C101 JESD22 MRF5S9150HSR3 d 5287 transistor Nippon chemi
Text: Freescale Semiconductor Technical Data Document Number: MRF5S9150H - 2 Rev. 3, 3/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5S9150HSR3 Designed for N - CDMA base station applications with frequencies from 869 to 960 MHz. Suitable for multicarrier amplifier applications.
|
Original
|
MRF5S9150H
MRF5S9150HSR3
150icers,
MRF5S9150H-2
NIPPON CAPACITORS
A114
A115
AN1955
ATC100B470JT500XT
C101
JESD22
MRF5S9150HSR3
d 5287 transistor
Nippon chemi
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRFE6S9060N Rev. 0, 10/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRFE6S9060NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of
|
Original
|
MRFE6S9060N
MRFE6S9060NR1
|
PDF
|
NIPPON CAPACITORS
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF6P23190H Rev. 1, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 2300 to 2400 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications.
|
Original
|
MRF6P23190H
MRF6P23190HR6
MRF6P23190H
NIPPON CAPACITORS
|
PDF
|
ALT1110
Abstract: MRFE6S9060N ATC700a MRFE6S9060NR1 A113 A114 A115 AN1955 ATC100B470JT500XT C101
Text: Freescale Semiconductor Technical Data Document Number: MRFE6S9060N Rev. 1, 10/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRFE6S9060NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of
|
Original
|
MRFE6S9060N
MRFE6S9060NR1
ALT1110
MRFE6S9060N
ATC700a
MRFE6S9060NR1
A113
A114
A115
AN1955
ATC100B470JT500XT
C101
|
PDF
|
|
NIPPON CAPACITORS
Abstract: 2 w rf 150-200 mhz 2508051107Y0 MRF6P23190HR6 A114 A115 AN1955 C101 JESD22 j3001
Text: Freescale Semiconductor Technical Data Document Number: MRF6P23190H Rev. 3, 12/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 2300 to 2400 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications.
|
Original
|
MRF6P23190H
MRF6P23190HR6
NIPPON CAPACITORS
2 w rf 150-200 mhz
2508051107Y0
MRF6P23190HR6
A114
A115
AN1955
C101
JESD22
j3001
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF6P9220H Rev. 0, 10/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6P9220HR3 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of
|
Original
|
MRF6P9220H
MRF6P9220HR3
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF6P23190H Rev. 3, 12/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 2300 to 2400 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications.
|
Original
|
MRF6P23190H
MRF6P23190HR6
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRFE6S9060N Rev. 1, 10/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRFE6S9060NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of
|
Original
|
MRFE6S9060N
MRFE6S9060NR1
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MMRF1315N Rev. 0, 7/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET MMRF1315NR1 Designed for wideband defense, industrial and commercial applications with frequencies up to 1000 MHz. The high gain and broadband performance of
|
Original
|
MMRF1315N
MMRF1315NR1
IS--95
7/2014Semiconductor,
|
PDF
|
J698
Abstract: NIPPON CAPACITORS A114 A115 AN1955 C101 JESD22 MRF6P9220HR3 Nippon chemi
Text: Document Number: MRF6P9220H Rev. 2, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6P9220HR3 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of
|
Original
|
MRF6P9220H
MRF6P9220HR3
J698
NIPPON CAPACITORS
A114
A115
AN1955
C101
JESD22
MRF6P9220HR3
Nippon chemi
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRFE6P3300H Rev. 2, 12/2009 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance
|
Original
|
MRFE6P3300H
MRFE6P3300HR3
|
PDF
|
UT-141C-50-SP
Abstract: 141c DVB-T Schematic ATC600S150FT250XT NIPPON CAPACITORS UT-141A-TP COAX AN1955 JESD22-A114 MRF6P3300H
Text: Document Number: MRF6P3300H Rev. 2, 10/2008 Freescale Semiconductor Technical Data MRF6P3300HR3/HR5 replaced by MRFE6P3300HR3/HR5. Refer to Device Migration PCN12895 for more details. MRF6P3300HR3 MRF6P3300HR5 RF Power Field Effect Transistor Designed for broadband commercial and industrial applications with fre-
|
Original
|
MRF6P3300H
MRF6P3300HR3/HR5
MRFE6P3300HR3/HR5.
PCN12895
MRF6P3300HR3
MRF6P3300HR5
MRF6P3300HR3
UT-141C-50-SP
141c
DVB-T Schematic
ATC600S150FT250XT
NIPPON CAPACITORS
UT-141A-TP
COAX
AN1955
JESD22-A114
MRF6P3300H
|
PDF
|
NIPPON CAPACITORS
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF6P23190H Rev. 0, 10/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for 802.16 WiBro and dual mode applications with frequencies from 2300 to 2400 MHz. Suitable for Class AB feedforward and predistortion
|
Original
|
MRF6P23190H
MRF6P23190HR6
MRF6P23190H
NIPPON CAPACITORS
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MMRF1014N Rev. 0, 7/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET MMRF1014NT1 Designed for Class A or Class AB power amplifier applications with frequencies up to 2000 MHz. Suitable for analog and digital modulation and
|
Original
|
MMRF1014N
MMRF1014NT1
|
PDF
|