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    TRANSISTOR PT 02 Search Results

    TRANSISTOR PT 02 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR PT 02 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: VS-GP250SA60S www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Trench PT IGBT, 600 V, 250 A Proprietary Vishay IGBT Silicon “L Series” FEATURES • Standard speed Trench PT IGBT • Fully isolated package • Very low internal inductance  5 nH typical


    Original     		PDF VS-GP250SA60S E78996 OT-227 OT-227 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    2sk1060

    Abstract: 2SK type transistor 2sk transistor 2sk193 2SK105 Datasheet transistor 2sk162 transistor SST 250 2SK1794 2SK104 2SK2234
    Text: Transistor Field Effect Transistor Small Signal FET • 2SK type Junction type Part number Absolute maximum ratings (TA = 25 °C) Package Electrical characteristics (TA = 25 °C) VGDO (V) ID (mA) PT (mW) |Yfs1| Applications IDSS (mA) (ms) TYP. 2.5 TYP. 2SK104


    Original     		PDF 2SK104 2SK105 2SK162 2SK163 2SK193 2SK195 2SK505 X10679EJCV0SG00 1996P 2sk1060 2SK type transistor 2sk transistor 2sk193 2SK105 Datasheet transistor 2sk162 transistor SST 250 2SK1794 2SK104 2SK2234

    Untitled

    Abstract: No abstract text available
    Text: VS-GT140DA60U www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 140 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 3 s short circuit capability • FRED Pt antiparallel diodes with ultrasoft reverse


    Original     		PDF VS-GT140DA60U OT-227 E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: VS-GT140DA60U www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 140 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 3 s short circuit capability • FRED Pt antiparallel diodes with ultrasoft reverse


    Original     		PDF VS-GT140DA60U OT-227 E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    A 3150 igbt driver

    Abstract: VS-GT140DA60U 60APH06
    Text: VS-GT140DA60U www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 140 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 3 s short circuit capability • FRED Pt antiparallel diodes with ultrasoft reverse


    Original     		PDF VS-GT140DA60U OT-227 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 A 3150 igbt driver VS-GT140DA60U 60APH06

    Untitled

    Abstract: No abstract text available
    Text: PJ2N9015 PNP Epitaxial Silicon Transistor PRE-APLIFIER, LOW LEVEL&LOW NOISE y High total power dissipation PT=450mW TO-92 SOT-23 y High hFE and good linearity y Complementary to PJ2N9014 ABSOLUTE MAXIMUM RATINGS (Ta= 25°C) Characteristic Pin : 1. Emitter


    Original     		PDF PJ2N9015 450mW) PJ2N9014 OT-23 PJ2N9015CT PJ2N9015CX OT-23

    DP2-40E

    Abstract: DP2-42E DP2-22 DP2-41E DP2-40N 703065 S2-0200 DP2-20 DP2-20F DP2-62E
    Text: DP2 SERIES High-performance Digital Pressure Sensor Complete functionality! Selection from a wide lineup * Passed the UL 991 Environment Test * UL 61010C-1 compatible, Passed the UL 991 Environment Test based on SEMI S2-0200. [Category applicable for semiconductor manufacturing: TWW2, Process Equipment]


    Original     		PDF 61010C-1 S2-0200. 61010C-1] UL991, S2-0200] DPX-04 SUS304) DP2-40E DP2-42E DP2-22 DP2-41E DP2-40N 703065 S2-0200 DP2-20 DP2-20F DP2-62E

    Untitled

    Abstract: No abstract text available
    Text: BIG IDEAS IN PowerTech BIG POWER ’ • HO AM PERES PT- 6 00 PT- 601 PT- 602 SILICON NPN TRANSISTOR FEATURES: v C E s a t 0 .7 5 V V @ 60 A . 1 .5 V @ 6 0 A BE 5 m în @ 1 1 0 A 'F E 2 .5 |i sec I S /b ■ " S /b '


    OCR Scan     		PDF

    photo transistor til 78

    Abstract: ECG3040 ECG3045 ecg 3041 ECG3041 ECG3047 3094 transistor ECG3090 ECG3086 ECG3098
    Text: Optoisolators DC Current Transfer Ratio Isolation Voltage Viso Surge V Total Power Pt (mW) 7500 7500 250 250 20 100 ECG3045 NPN Darlington NPN Darlington 7500 3550 7500 7500 250 260 300 300 ECG3081 NPN Transistor 6000 ECG3082 NPN Darlington 6000 ECG3083


    OCR Scan     		PDF ECG3040 ECG3041 ECG3042 ECG3043 ECG3044 ECG3045 photo transistor til 78 ecg 3041 ECG3047 3094 transistor ECG3090 ECG3086 ECG3098

    Untitled

    Abstract: No abstract text available
    Text: KSD1692 NPN SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN LOW COLLECTOR SATURATION VOLTAGE BUILT-IN A DAMPER DIODE AT E-C T O -1 2 6 HIGH POWER DISSIPATION : PT = 1.3W T .= 25°C ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Collector-Base Voltage


    OCR Scan     		PDF KSD1692

    2SC16

    Abstract: No abstract text available
    Text: TOSHIBA { D I S C R E TE /O PT O} 3T • - DËTjTOTTaSO □ OOlfH'í 2 - 1 9097250 TOSHIBA DI SC R E T E / O P T O > 39C 01899 □ SEMICONDUCTOR TECHNICAL DATA * 2 b ? * ì? a * TOSHIBA TRANSISTOR 2S01677 SILICON NPN EPITAXIAL PLANAR INDUSTRIAL APPLICATIONS


    OCR Scan     		PDF 2S01677 270UHz) 2SC16

    2SC2506

    Abstract: T6M40F1 2SC250 ok01
    Text: S H I N D E N G E N E L E C T R I C MFG MIE 021=1307 J> 0000002 1 ISHE J • Outline Dimensions gMAX 10 • Ratings Item Absolute Maximum TI V cbo V ceo Base Current Transistor Dissipation Collector to Em itter Sustaining Voltage 12 Icp Ib Ib p Pt V ceo su s


    OCR Scan     		PDF 2SC2506 T6M40F1 10//Sr 2SC2506 T6M40F1 2SC250 ok01

    NE46734

    Abstract: cm3x sot89 "NPN TRANSISTOR"
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE46734 GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT FEATURES LOW NOISE FIGURE UNMATCHED 4: 2.4 dB at 500 MHz 2.3 dB TYP at 200 MHz HIGH S21 GAIN4: 12 dB at 500 MHz 20 dB TYP at 200 MHz HIGH PT LOW COST DESCRIPTION Collector Current, Ic (mA)


    OCR Scan     		PDF NE46734 NE46734 2SC2954 IS12I OT-89) cm3x sot89 "NPN TRANSISTOR"

    avantek

    Abstract: AT-42035 Avantek, Inc 321E T-31-21 8v-312 Avantek amplifier 8 12 GHz Avantek amplifier 12.5 sa AVANTEK oscillator
    Text: AVANTEK Q SQE D I NC avantek • i m n t t AT-42035 Up to 6 GHz Medium Power Silicon Bipolar Transistor Avantek 35 micro-X Package Features • • • • • OQObMöT 5 High Output Power: 21.0 dBm typical Pi dB at 2.0 GHz 20.5 dBm typical Pt dB at 4.0 GHz


    OCR Scan     		PDF AT-42035 AT-42035 microwave64 avantek Avantek, Inc 321E T-31-21 8v-312 Avantek amplifier 8 12 GHz Avantek amplifier 12.5 sa AVANTEK oscillator

    D67DE5

    Abstract: Q6015at
    Text: LO R A S I N D U S T R I E S INC MEE D • 55ÛG44Ô QDG003D 7 « L O R A TRANSISTOR PACKAGE TYPE PART No. DESCRIPTION H fe Pt 25°C Watts iç Amps VEBO Volts VCEO Volts VCBO Volts !ç H fe Amps - 250 250 300 300 5.0 5.0 5.0 5.0 125.00 50.00 S0.00 50.00


    OCR Scan     		PDF QDG003D Q2006LT Q4006LT Q6006LT Q4006AT Q6006AT T0220AB/I T0220AByr GIT03 D67DE5 Q6015at

    transistor et 454

    Abstract: 2SC1842 JE 33 PA33 SC-43A JE 720 transistor transistor afr 46
    Text: NEC j b ^ > '> 9 Silicon T ra n s is to r 2SC1842 NPN Silicon Epitaxial Transistor Audio Frequency Low Noise Amplifier $Së/FEATU RES ^ • ^ H / P A C K A G E D IM EN SIO N S 7'Jt, O fftf;X f Pt, ffl t r —7" u =J - Unit : mm ¿"COfiJg|?£Í9j4'fxít?lt>I


    OCR Scan     		PDF 2SC1842 SC-43A transistor et 454 2SC1842 JE 33 PA33 SC-43A JE 720 transistor transistor afr 46

    transistor Cd 18 p

    Abstract: ic MARKING FZ 2SA1759 7028 TRANSISTOR marking 7T transistor
    Text: 2SA1759 Transistor, PNP Features D im ensions Units : mm • av a ila b le in M P T 3 (M PT, S C -6 2 ) p a cka g e • p a c k a g e m arking: 2 S A 1 7 5 9 ; AH-*, w h ere ★ is hFE co d e • high breakdow n voltage, 2SA1759 (MPT3) V ceo = “ 400 V


    OCR Scan     		PDF 2SA1759 SC-62 transistor Cd 18 p ic MARKING FZ 2SA1759 7028 TRANSISTOR marking 7T transistor

    D1088

    Abstract: 2SC200 D1173 2SC2001 transistor 2sc2001 C10535J C10943X PA33
    Text: v ' J = i > h 7 > ÿ ^ Silic o n T ra n sisto r 2SC2001 NPN Silicon Epitaxial Transistor Audio Frequency Amplifier 4$ ^JK S /P A C K A G E DIMENSIONS »/F E A T U R E S U nit : mm 5.2 MAX. < , S hFE -r U t f f c / J o Pt = 600 mW L s 7 f if à f t m æ T T o


    OCR Scan     		PDF 2SC2001 02SA952tl SC-43B D11738JJ3V0DS00 10lfllAfl D1088 2SC200 D1173 2SC2001 transistor 2sc2001 C10535J C10943X PA33

    D60T1520

    Abstract: D60T152010 D62T D62T1520 D62T152010 Scans-0014004 powerex to-200
    Text: ’POWEREX INC 7294621 POWEREX Tfl INC 98D f ^ W V E flE A DE |? ET 4 b a i DDOEbTl 7 02691 Powerex, Inc., Hillls Street, Youngwood, Pennsylvania 15697 412 925-7272 D D60T1520 D62T1520 Tentative NPN Power Switching Transistors 200 Amperes 150 Volts Features:


    OCR Scan     		PDF D60T1520 D62T1520 D62T1520 Amperes/150 D60T/D62T1520 060T/D62T1520 D60T1520 D60T152010 D62T D62T152010 Scans-0014004 powerex to-200

    Untitled

    Abstract: No abstract text available
    Text: POUETREX 7294621 m N INC ejß]> ]> POWEREX E H m INC 7 2 ^ 2 1 0002431 3 98 D 02431 E X KEE525B0 Powerex, Inc., Hlllls Street, Yaungwood, Pennsylvania 15697 412 925-7272 In te g r a l B a k e r C la iìip Six-Darlington Transistor Module 8 Amperes/300 Volts


    OCR Scan     		PDF KEE525B0 Amperes/300 KEE525B0

    bi 370 transistor e

    Abstract: Westinghouse diode bi 370 transistor Westinghouse power diode WESTINGHOUSE ELECTRIC ke92 KE92450510 westinghouse power transistor transistor al fm westinghouse ac motor
    Text: 7 2 9 4 6 2 1 P O W E R E X INC ¡bi 7 5 T 4 LiH 1 ODOQTSB Six/Pac Darlington TRANSISTOR „ Modules Dim A B C D E F G H J K L M N O P Q R S T U V w X Y Inches 3.70 3.150+.020 .768 .79 .394 3.386 2.913 2.48 1.89 .472 .236 .118 .197 .551 .709 .059 .217 1.50


    OCR Scan     		PDF KE92450510 KE92450510 bi 370 transistor e Westinghouse diode bi 370 transistor Westinghouse power diode WESTINGHOUSE ELECTRIC ke92 westinghouse power transistor transistor al fm westinghouse ac motor

    SPK1300

    Abstract: SPK1150 327B4 SPK1350 Solitron SPK1100 Solitron Transistor Solitron Devices
    Text: 8368602 SOLITRON DEVICES INC _ fib 86D 02439 D E jfl3 b flb D 5 n . -rr 3 3 - □ □ 0 5 4 3 c] I i - !" Now There's A Choice! IS O LA T E D A N D G R U 1 D E D D A R U E M iT O If P O V S E R M O D U L E S Paralleled Up To 10,000 Amps DUAL ISOLATED


    OCR Scan     		PDF 1-A30, DT96309 SPK1300 SPK1150 327B4 SPK1350 Solitron SPK1100 Solitron Transistor Solitron Devices

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A MP4024 TOSHIBA POWER TRANSISTOR MODULE SILICON NPN EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR 4 IN 1 M P 4 024 HIGH PO W ER SWITCHING APPLICATIONS. IN D U S T R IA L A P P L IC A T IO N S U n it in mm H AM M ER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE


    OCR Scan     		PDF MP4024

    2N5301

    Abstract: No abstract text available
    Text: 836860 2 SOL ITRON DEV ICES INC t.1 3 DE fl3t.flt.02 0001313 t. | ¡¿¡olitron Devices, Inc. S P E C I F I C A T I O N S MAXIMUM RATINGS NO.: 2N5301 TYPE: NPN E P I BASE CASE: TO-3 • . 40 V Voltage, Collector to Emitter (V cE0 . .


    OCR Scan     		PDF 2N5301 5725E 2N5301