Untitled
Abstract: No abstract text available
Text: R5527K SERIES 3A Load Switch IC NO. EA-312-130122 OUTLINE The R5527K Series are N-channel load switch ICs with low supply current, Typ. 40µA. By using an Nch transistor as a driver transistor, the features of low on resistance and the reverse current protection at on/off state
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R5527K
EA-312-130122
1612-4D
Room403,
Room109,
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Untitled
Abstract: No abstract text available
Text: R5527K SERIES 3A Load Switch IC NO. EA-312-140124 OUTLINE The R5527K is an N-channel load switch IC with low supply current, Typ. 40µA. By using an Nch transistor as a driver transistor, the features of low on resistance and the reverse current protection at on/off state are realized.
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R5527K
EA-312-140124
1612-4D
Room403,
Room109,
10F-1,
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12-CE 519
Abstract: 2569s
Text: R5540K SERIES N-channel Load Switch IC NO. EA-268-111028 OUTLINE The R5540 series are N-channel Load Switch ICs with the low supply current, Typ. 9µA. By using an Nch transistor as a driver transistor, the features of low on resistance and the reverse current protection at off state
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R5540K
EA-268-111028
R5540
1010-4F,
Room403,
Room109,
12-CE 519
2569s
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Untitled
Abstract: No abstract text available
Text: R5 5 4 0 K SERI ES N-channel Load Switch IC NO. EA-268-111028 OUTLINE The R5540 series are N-channel Load Switch ICs with the low supply current, Typ. 9µA. By using an Nch transistor as a driver transistor, the features of low on resistance and the reverse current protection at off state
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EA-268-111028
R5540
1010-4F,
Room403,
Room109,
10F-1,
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marking r55
Abstract: K 608 2SC5455 1117 transistor 0340 180
Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5455 NPN EPITAXIAL SILICON TRANSISTOR 4-PIN MINI MOLD FEATURE PACKAGE DIMENSIONS in mm • Ideal for medium-output applications +0.2 +0.2 3 2 1.5 –0.1 Collector to Emitter Voltage VCEO 6 V Emitter to Base Voltage
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2SC5455
marking r55
K 608
2SC5455
1117 transistor 0340 180
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2SC5752
Abstract: 2SC5752-T1
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5752 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 60 mW 4-PIN SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm
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2SC5752
2SC5752-T1
2SC5752
2SC5752-T1
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ne678m04-a
Abstract: 2SC5753
Text: NPN SILICON RF TRANSISTOR NE678M04 / 2SC5753 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 60 mW FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm
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NE678M04
2SC5753
NE678M04-A
2SC5753-A
NE678M04-T2-A
2SC5753-T2-A
P15659EJ1V0DS
2SC5753
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2SC5753
Abstract: nec k 813 2SC5753-T2 p1565 RF transistor
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5753 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 60 mW FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm
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2SC5753
2SC5753-T2
2SC5753
nec k 813
2SC5753-T2
p1565
RF transistor
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j 6815 transistor
Abstract: 2SC5434 2SC5509 2SC5753 2SC5754 2SC5754-T2 DCS1800 GSM1800 NE5520379A PU10008EJ01V0DS
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5754 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 0.4 W FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for 460 MHz to 2.4 GHz medium output power amplification • PO (1 dB) = 26.0 dBm TYP. @ VCE = 3.6 V, f = 1.8 GHz, Pin = 15 dBm
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2SC5754
2SC5754-T2
j 6815 transistor
2SC5434
2SC5509
2SC5753
2SC5754
2SC5754-T2
DCS1800
GSM1800
NE5520379A
PU10008EJ01V0DS
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TRANSISTOR J 6815 EQUIVALENT
Abstract: 2SC5754-T2 nec k 813 DCS1800 GSM1800 NE5520379A 2SC5434 2SC5509 2SC5753 2SC5754
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5754 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 0.4 W FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for 460 MHz to 2.4 GHz medium output power amplification • PO (1 dB) = 26.0 dBm TYP. @ VCE = 3.6 V, f = 1.8 GHz, Pin = 15 dBm
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2SC5754
2SC5754-T2
TRANSISTOR J 6815 EQUIVALENT
2SC5754-T2
nec k 813
DCS1800
GSM1800
NE5520379A
2SC5434
2SC5509
2SC5753
2SC5754
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transistor marking R57 ghz
Abstract: TRANSISTOR R57 PU10008EJ02V0DS 2SC5434 2SC5509 2SC5753 2SC5754 2SC5754-T2 DCS1800 GSM1800
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5754 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 0.4 W FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Ideal for 460 MHz to 2.4 GHz medium output power amplification • PO (1 dB) = 26.0 dBm TYP. @ VCE = 3.6 V, f = 1.8 GHz, Pin = 15 dBm
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2SC5754
2SC5754-T2
PU10008EJ02V0DS
transistor marking R57 ghz
TRANSISTOR R57
PU10008EJ02V0DS
2SC5434
2SC5509
2SC5753
2SC5754
2SC5754-T2
DCS1800
GSM1800
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NE664M04
Abstract: 2SC5753
Text: PRELIMINARY DATA SHEET MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR NE678M04 FEATURES • NEW LOW PROFILE M04 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm Flat lead style for better RF performance +0.40-0.05 2 1.25 0.650.65 2.0±0.1 R55
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NE678M04
OT-343
NE678M04
NE664M04
NE678M04-T2
08cm2
2SC5753
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R5524N004A
Abstract: RL56 R5524N R5524
Text: R5524N SERIES USB HIGH-SIDE POWER SWITCH NO.EA-188-110622 OUTLINE The R5524N series is CMOS-based high-side MOSFET switch ICs for Universal Serial Bus USB applications. Using Nch FET as a switching transistor, low ON resistance (Typ.100mΩ) and reverse current
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R5524N
EA-188-110622
Room403,
Room109,
10F-1,
R5524N004A
RL56
R5524
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R5524N001
Abstract: R5524N002 r5524n
Text: R5524N SERIES USB HIGH-SIDE POWER SWITCH NO.EA-188-100618 OUTLINE The R5524N series is CMOS-based high-side MOSFET switch ICs for Universal Serial Bus USB applications. Using Nch FET as a switching transistor, low ON resistance (Typ.100mΩ) and reverse current
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R5524N
EA-188-100618
980mA)
Room403,
Room109,
R5524N001
R5524N002
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R5528Z001A-E2-F
Abstract: r5528z001 313130 R5528Z
Text: R5528Z SERIES OVERVOLTAGE PROTECTION SWITCH IC NO.EA-313-130218 OUTLINE The R5528Z Series are CMOS-based overvoltage protection switch ICs that use an NMOS pass transistor to achieve ultra-low on resistance Typ. 54mΩ . Overvoltage protection threshold is as high as 6.8V±3%. Also,
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R5528Z
EA-313-130218
Room403,
Room109,
R5528Z001A-E2-F
r5528z001
313130
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Untitled
Abstract: No abstract text available
Text: R5528Z SERIES OVERVOLTAGE PROTECTION SWITCH IC NO.EA-313-130111 OUTLINE The R5528Z Series are CMOS-based overvoltage protection switch ICs that use an NMOS pass transistor to achieve ultra-low on resistance Typ. 54mΩ . Overvoltage protection threshold is as high as 6.8V±3%. Also,
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R5528Z
EA-313-130111
Room403,
Room109,
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R5524N004A
Abstract: R5524N004 R5524N001 R5524N R5524N002A
Text: R5524N SERIES USB HIGH-SIDE POWER SWITCH NO.EA-188-111212 OUTLINE The R5524N series is CMOS-based high-side MOSFET switch ICs for Universal Serial Bus USB applications. Using Nch FET as a switching transistor, low ON resistance (Typ.100mΩ) and reverse current
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R5524N
EA-188-111212
Room403,
Room109,
R5524N004A
R5524N004
R5524N001
R5524N002A
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R5524N001
Abstract: AT/R5524N002A
Text: R5524N SERIES USB HIGH-SIDE POWER SWITCH NO.EA-188-100924 OUTLINE The R5524N series is CMOS-based high-side MOSFET switch ICs for Universal Serial Bus USB applications. Using Nch FET as a switching transistor, low ON resistance (Typ.100mΩ) and reverse current
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R5524N
EA-188-100924
Room403,
Room109,
R5524N001
AT/R5524N002A
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R5528Z
Abstract: wireless charger
Text: R5528Z SERIES Overvoltage Protector IC with Reverse Current Protection NO.EA-313-130418 OUTLINE The R5528Z Series are CMOS-based overvoltage protector ICs with reverse current protection that use an NMOS pass transistor to achieve ultra-low on resistance Typ. 54mΩ . Overvoltage protection threshold is as
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R5528Z
EA-313-130418
Room403,
Room109,
wireless charger
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R5528Z001A
Abstract: No abstract text available
Text: R5528Z SERIES Overvoltage Protector IC with Reverse Current Protection NO.EA-313-130513 OUTLINE The R5528Z001A is a CMOS-based overvoltage protector IC with reverse current protection that use an NMOS pass transistor to achieve ultra-low on resistance Typ. 54mΩ . Overvoltage protection threshold is as high as
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R5528Z
EA-313-130513
R5528Z001A
Room403,
Room109,
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2SC5753
Abstract: NE678M04 NE678M04-T2-A S21E IC pt 2262 ic nec 2051
Text: NEC's MEDIUM POWER NPN NE678M04 SILICON HIGH FREQUENCY TRANSISTOR FEATURES • NEW LOW PROFILE M04 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm Flat lead style for better RF performance +0.40-0.05 2 1.25 0.650.65 2.0±0.1 R55 1 NEC's NE678M04 is fabricated using NEC's HFT3 wafer
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NE678M04
NE678M04
2SC5753
NE678M04-T2-A
S21E
IC pt 2262
ic nec 2051
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M 9639 transistor
Abstract: application IC 7411 SiS 486
Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR 4-PIN MINI MOLD FEATURE PACKAGE DIMENSIONS in mm • Ideal for medium-output applications • High gain, low noise • Small reverse transfer capacitance • Can operate at low voltage
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON 3 2 N 5657 IMDeiRi i[LiCTI ®[i!lDS$ SILICON NPN TR A N SISTO R . SGS-THOMSON PREFERRED SALESTYPE . NPN TRANSISTOR DESCRIPTION The 2N5657 is a silicon epitaxial-base NPN transistor in Jedec SOT-32 plastic package. It is intended for use output amplifiers, low current,
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2N5657
OT-32
-r-55
2N5657
OT-32
O-126)
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5455 NPN EPITAXIAL SILICON TRANSISTOR 4-PIN MINI MOLD FEATURE PACKAGE DIMENSIONS in mm • Id e a l for m e d iu m -o u tp u t ap p lic atio n s • High g ain , low noise • S m a ll re v e rs e tra n s fe r c a p a c ita n c e
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2SC5455
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