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    TRANSISTOR S19 Search Results

    TRANSISTOR S19 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR S19 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SK4146

    Abstract: 2SK4146-S19 R07DS0130EJ0100
    Text: Preliminary Data Sheet 2SK4146 R07DS0130EJ0100 Rev.1.00 Sep 24, 2010 MOS FIELD EFFECT TRANSISTOR Description The 2SK4146 is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS on = 10.1 mΩ MAX. (VGS = 10 V, ID = 40 A)


    Original     		2SK4146 R07DS0130EJ0100 2SK4146 2SK4146-S19-AY O-220, 2SK4146-S19 R07DS0130EJ0100 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet 2SK4146 R07DS0130EJ0100 Rev.1.00 Sep 24, 2010 MOS FIELD EFFECT TRANSISTOR Description The 2SK4146 is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS on = 10.1 mΩ MAX. (VGS = 10 V, ID = 40 A)


    Original     		2SK4146 R07DS0130EJ0100 2SK4146 2SK4146-S19-AY O-220, PDF

    2SK3116B-S19-AY

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3116B SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3116B is N-channel MOS FET device that features a PART NUMBER low gate charge and excellent switching characteristics, and 2SK3116B-S19-AY


    Original     		2SK3116B 2SK3116B 2SK3116B-S19-AY O-220AB MP-25) O-263 MP-25ZK) 2SK3116B-ZK-E1-AY O-220AB) 2SK3116B-S19-AY PDF

    D1806

    Abstract: 2SK3116B-S19-AY 2SK3116B-ZK-E1-AY MP-25 2SK3116B
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3116B SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3116B is N-channel MOS FET device that features a PART NUMBER low gate charge and excellent switching characteristics, and 2SK3116B-S19-AY


    Original     		2SK3116B 2SK3116B 2SK3116B-S19-AY 2SK3116B-ZK-E1-AY O-220AB MP-25) O-263 MP-25ZK) O-220AB) D1806 2SK3116B-S19-AY 2SK3116B-ZK-E1-AY MP-25 PDF

    SMO-14

    Abstract: SLG 2016 D 2SK26 2N42 N4 TAM 2N425 marking aaae 2n427 GERMANIUM SMALL SIGNAL TRANSISTORS 2N426
    Text: MIL-S-19500A1B EL See Section6 MILITARYSPECIFICATION SEMICONDUCTORDEVICE,TRANSISTOR,PNP, GERMANIUM,SWITCHING TYPSS 2N425,2Nb26, 2N42? 1. SCOPS 131 w.-. This specificationcovers the detail requirementsfor germanium PNP,“transietora for use in low-power switchingapplication


    Original     		MIL-S-19500A1B( 2N425 2Nb26 -AO07 SMO-14 SLG 2016 D 2SK26 2N42 N4 TAM marking aaae 2n427 GERMANIUM SMALL SIGNAL TRANSISTORS 2N426 PDF

    2N1174

    Abstract: 2N1179 2N1113 transistor marking WY ske 250A
    Text: ● MIL-s-19500/215 NAVV 9 November 1961 ~fTARY TRANSISTOR, 1. SPECIFICATION ‘IYPES 2N1179 ANo SCOPE 1.1 ~ - Tht8 specification covers PNP type 2N1 174 transistors, tie general 19500, unie.m otherwise specified herein. the detail requirements for germankm,


    Original     		MIL-s-19500/215 2N1179 IMDL12 2NI174; MIL-fl-19520/ll 5001he 2N1174. 2N1174 2N1113 transistor marking WY ske 250A PDF

    T 3036

    Abstract: bel transistor 1041 B SAQ marking 2N23 2N2377 S19C T3036
    Text: MlL-S-l 9500/288 24 Apdl 1964 MILITARY EL SPECIFICATION TRANSISTOR, PNP, SILICON TYPE 2N2377 . 1. SCOPE . i’ .- This specification *is~*l.dlo4mdo-ky~qmplifl&ciK.i~. 1.2 Outline and dlmemioru. - 1.3 Particular electrical coven the de?ajl requirem&ts “o,


    Original     		2N2377 MIL-S-19SCW288 MIL-s-19500/288 T 3036 bel transistor 1041 B SAQ marking 2N23 2N2377 S19C T3036 PDF

    IR s27

    Abstract: infrared led receiver s28 transistor s46 IR s28 transistor s19 infrared remote switch infrared led receiver transistor s49 TRANSISTOR S28 s16 transistor
    Text: Infrared Remote Controller HT48RA0-5 Integrated Oscillator and NMOS Driver Characteristics  Fully integrated system oscillator and N-MOSFET driver. No need for external resonator, 2 capacitors and transistor, increasing product competitive advantages.  Adjustable programming - suitable for different remote code formats.


    Original     		HT48RA0-5 HT622x) HT48RA0-5 20SSOP) IR s27 infrared led receiver s28 transistor s46 IR s28 transistor s19 infrared remote switch infrared led receiver transistor s49 TRANSISTOR S28 s16 transistor PDF

    AA104VB05

    Abstract: DATA VISION LCD MODULE 320 240 ENH104V2-380/450/600
    Text: ENH104V2-380/450/600 Panelview Enhancing the Vision ENH104V2-380/450/600 Color TFT-LCD Module Features SPECIFICATIONS GENERAL DESCRIPTION ITEM Panelview provides optically enhanced solutions to the standard Optrex AA104VB05 color TFT-LCD Thin Film Transistor Liquid Crystal Display module. The first


    Original     		ENH104V2-380/450/600 ENH104V2-380/450/600 AA104VB05 IM/110 DATA VISION LCD MODULE 320 240 PDF

    2N117

    Abstract: 2N118 2N119 2N11R Cmd 2026 B-IA8 Transistor hall 2S50 9w9w knb 1532
    Text: MIL-S-19500/2B U June 196S SUpEWEDfNG MfL-S-19500/2A 28 May 1963 MfL-S-19500/35B NAVY 3 January 1966 (See 6.2. ) MILITARY SEMICONDUCTOR SPECIF’fCATfON DE VfCE, TRANSISTOR, TYPES 2N117. 2N118, NPN, .WLICON, AND 2N119 LOW-POWER This specification ie ma.~tory


    Original     		MIL-S-19500/2B MfL-S-19500/2A MfL-S-19500/35B 2N117. 2N118, 2N119 2NI17 2N117 2N118 2N119 2N11R Cmd 2026 B-IA8 Transistor hall 2S50 9w9w knb 1532 PDF

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


    OCR Scan     		2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 PDF

    2N599 JAN

    Abstract: 2N599 N468 MIL-S-19491 Y2 TRANSISTOR CONFORMANCE pnp germanium transistor
    Text: M IL-S-19500/186C NAVY 22 June 1964 SUPERSEDING MIL-S-l9500/166B(NAvy) 20 September 1962 (See 6.2) MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, TYPE 2N599 1. SCOPE 1.1 D escription.- This Specification covers the detailed requirem ents for a PNP germanium transistor


    OCR Scan     		MIL-S-19500/166C 19500/166B 2N599 MIL-S-19500, 2N599. M3L-S-19500/166C SH70ST 2N599 JAN 2N599 N468 MIL-S-19491 Y2 TRANSISTOR CONFORMANCE pnp germanium transistor PDF

    Diode S17

    Abstract: KS52 transistor s19 KS524575 S-17 S-20 1B2 diode
    Text: m m /BSK KS524575 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 S i n g l o D d r liflC f tO n Transistor Module 75 Amperes/600 Volts OUTLINE DRAWING Description: The Powerex Single Darlington Transistor Modules are high power


    OCR Scan     		KS524575 Amperes/600 Diode S17 KS52 transistor s19 KS524575 S-17 S-20 1B2 diode PDF

    POWER TRANSISTORS 10A 400v pnp

    Abstract: NPN Transistor 10A 400V to3 2N1489 2N1468 pnp 400v 10a 1526a 2NXXXX 2N6350 2N1400 2N6352
    Text: 62S4Ò22 S I L I üuin TRANSISTOR CORP u j . l 4 .\. v ii I n n m ü j. _88DQ0787 STOR CORP flfl D .T -A B -ß DE |fl2S40aa 000 Q7Ö7 S T • 2 .3 -1 / f NUMERICAL INDEX TO JAN QUALIFIED POWER TRANSISTORS 2NTYPE* JAN JAN TX JANTXV MIL-S19500 PAGETABLE 2N389


    OCR Scan     		T-33-Ã flES40aa D0D07Ã 19S00 2N389 /173A 2N424 2N1016B /102A POWER TRANSISTORS 10A 400v pnp NPN Transistor 10A 400V to3 2N1489 2N1468 pnp 400v 10a 1526a 2NXXXX 2N6350 2N1400 2N6352 PDF

    Untitled

    Abstract: No abstract text available
    Text: m m atEK Powerex, inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 KS524575 Single Darlington Transistor Module 75 Amperes/600 Volts A bsolute Maximum Ratings, Tj = 25 °C unless otherwise specified Symbol KS524575 Units Junction Temperature


    OCR Scan     		KS524575 Amperes/600 PDF

    2N6137

    Abstract: 2N6138 2N6116 J1026 2N6117 2N6118 "Programmable Unijunction Transistor" 2N6118 JAN JAN 2N6137 2N6116 JANTX
    Text: INCH-PÙUNDI MIL-S-19500/493A ER 30 MARCH 1990 SUPERSEDING- MIL-S-19500/493(EL) 22 January 1974 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, PNPN, THYRISTOR, SILICON, (PROGRAMMABLE UNIJUNCTION TRANSISTOR), TYPES: 2N6116, 2N6117, 2N6118, 2N6137, 2N6138, JAN, JANTX, AND JANTXV


    OCR Scan     		MIL-S-19500/493A MIL-S-19500/493 2N6116, 2N6117, 2N6118, 2N6137, 2N6138, MIL-S-19500. T0-18) 2N6137 2N6138 2N6116 J1026 2N6117 2N6118 "Programmable Unijunction Transistor" 2N6118 JAN JAN 2N6137 2N6116 JANTX PDF

    Untitled

    Abstract: No abstract text available
    Text: International gsæ]Rectifier P D -9 .9 2 8 IRGVH50F INSULATED GATE BIPOLAR TRANSISTOR Fast-Speed IGBT • • • • • • Hermetically sealed Isolated Latch-proof Simple gate drive High operating frequency Switching-loss rating includes all “tail” losses


    OCR Scan     		O-258AA IRGVH50FD IRGVH50FU S-19S00 O-258 G-130 PDF

    3TE445

    Abstract: 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159
    Text: Radio Valve and Transistor Data Characteristics of 3,000 Valves and Cathode Ray Tubes, 4, 500 Transistors, Diodes, Rectifiers and Integrated Circuits Compiled by A.M.Ball First published February 1949 Ninth Edition published in 1970 by Iliffe Books, an imprint of the Butterworth Group


    OCR Scan     		FJJ141/A 2305D FJJ181/A 2305E/848 FJJ191/A FJL101/A CD2306D FJY101/A 2306E/832 CD2307/944 3TE445 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159 PDF

    transistor 21Y

    Abstract: 2N1556 2N1556A TRANSISTOR 3052 2N1553A 2N1554A 2N1555A 2N1555 J717 2N1553
    Text: MIfc-a-Î9500/3 31ACEL 8 February 1971 SUp ERSE d M ; MIL-S-19500/331 EL) 5 May 1965 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP. GERMANIUM, POWER TYPES 2N1553A THROUGH 2N1556A I. SCOPE 1.1 Scope.- This specification covers the detail requirements


    OCR Scan     		/331A MIL-S-19500/ 2N1553A 2N1556A 2N1554A 2N1555A 2N1556A transistor 21Y 2N1556 TRANSISTOR 3052 2N1555 J717 2N1553 PDF

    LM 4863 D

    Abstract: LD 7576 OS TI01W IC sj 4558 sj 4558 lm/ITE 8987 transistor LT 6225 sj 2518 CI sj 4558 lt 6225
    Text: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE688 SERIES FEATURES • LOW PHASE NOISE DISTORTION • LOW NOISE: 1 .5 dB at 2.0 GHz . LOW VOLTAGE OPERATION . LARGE ABSOLUTE MAXIMUM COLLECTOR CURRENT: Ic MAX = 100 mA 18 SOT 343 STYLE 19 (3 PIN ULTRA SUPER


    OCR Scan     		NE688 NE68818-T1 NE68819-T1 NE68830-T1 NE68833-T1 NE68839-T1 NE68839R-T1 LM 4863 D LD 7576 OS TI01W IC sj 4558 sj 4558 lm/ITE 8987 transistor LT 6225 sj 2518 CI sj 4558 lt 6225 PDF

    2N7236 JANTX

    Abstract: 2N7236 mosfet K 1377
    Text: Data Sheet No. PD-9.495D INTERNATIONAL RECTIFIER IO R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFM914Q 2N 7236 JANS2N7236 JANTX2N7236 JANTXV2N7236 [REF: M IL-S-1S500/5S5] -100 Volt, 0.20 Ohm HEXFET Product Summary The HEXFET® technology is the key to International


    OCR Scan     		IRFM914Q JANS2N7236 JANTX2N7236 JANTXV2N7236 IL-S-1S500/5S5] ap142) IRFM9140D IRFM9140U O-254 S-19500 2N7236 JANTX 2N7236 mosfet K 1377 PDF

    d14g

    Abstract: No abstract text available
    Text: Data Sheet No. PD-9.492C INTERNATIONAL RECTIFIER Ii r 1 REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL IRFM440 SN78SS JANTXaN7222 JANTXV2INI7SSS { R E F : M IL ~ S - 1 9 S O O / 5 9 6 Product Summary 500 Volt, 0,85 Ohm HEXFET


    OCR Scan     		IRFM440 SN78SS JANTXaN7222 IRFM440D MILS-1950B d14g PDF

    army sc-c-179495

    Abstract: 2N426 2N428 germanium transistor ac 127 STT 433
    Text: MIL-S-19500/44D •lEJter sh 1970 SUPERSEDING MIL-S-19500/44C 9 April 1962 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, LOW-POWER TYPE 2N428 This specification is mandatory fo r use by all De­ partments and Agencies o f the Department o f Defense.


    OCR Scan     		MIL-S-19500/44D MIL-S-19500/44C 2N428 000-hour MIL-S-19500, MIL-S-19500 army sc-c-179495 2N426 2N428 germanium transistor ac 127 STT 433 PDF

    a2724

    Abstract: Transistor A23 CFB0230A 2S302 A23 transistor TRANSISTOR a31 32 bit carry select adder
    Text: CFB0230A CFB0230A CFB023ÛA 32-bit Carry Select Adder description: CFB0230A uses a fast carry-select algorithm to perforin an addition of two 32-bit numbers. LOGIC SYMBOL : CI A31 :0 B31:0 CFB0230A CO + I S31:0 TïflE-f32 INPUTS LOADING IN TRANSISTOR PAIRS) :


    OCR Scan     		CFB0230A CFB023 32-bit CFB0230A flE-f32) a2724 Transistor A23 2S302 A23 transistor TRANSISTOR a31 32 bit carry select adder PDF