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    TRANSISTOR S1D Search Results

    TRANSISTOR S1D Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR S1D Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    TRANSISTOR S1d

    Abstract: smbta42
    Text: SMBTA42 NPN Silicon Transistor for High Voltages 3  High breakdown voltage  Low collector-emitter saturation voltage  Complementary types: SMBTA92 PNP 2 1 Type Marking SMBTA42 s1D Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings Parameter


    Original     		SMBTA42 SMBTA92 VPS05161 Sep-27-2002 EHP00842 EHP00843 EHP00844 TRANSISTOR S1d smbta42 PDF

    TRANSISTOR S1d

    Abstract: No abstract text available
    Text: SMBTA42 NPN Silicon Transistor for High Voltages 3  High breakdown voltage  Low collector-emitter saturation voltage  Complementary types: SMBTA92 PNP 2 1 Type Marking SMBTA42 s1D Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings Parameter


    Original     		SMBTA42 SMBTA92 VPS05161 Jun-29-2001 EHP00842 EHP00843 EHP00844 TRANSISTOR S1d PDF

    TRANSISTOR S1d

    Abstract: No abstract text available
    Text: SMBTA42M NPN Silicon High-Voltage Transistor 4  High breakdown voltage  Low collector-emitter saturation voltage 5  Complementary type: SMBTA92M PNP 3 2 1 VPW05980 Type Marking SMBTA42M s1D Pin Configuration 1=B 2=C 3=E Package 4=n.c. 5 = C SCT595 Maximum Ratings


    Original     		SMBTA42M SMBTA92M VPW05980 SCT595 Jun-29-2001 EHP00842 EHP00843 TRANSISTOR S1d PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SMBTA 42 NPN Silicon Transistor for High Voltages • High breakdown voltage • Low collector-em itter saturation voltage • C om plem entary types: SM BTA 92 PNP Type Marking Ordering Code Pin Configuration SM BTA 42 s1D Q 68000-A6482 1 =B 2=E


    OCR Scan     		68000-A6482 OT-23 Jan-22-1999 P00839 PDF

    IS21E

    Abstract: Transistor S1D
    Text: TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE S1D43 tentative OVHF UHF BAND LOW NOISE AM P L I F IE R APLICATIONS Iß I ooWöI Low Noise : Figure : NF=1.5dB(at f=2GHz) High Gain : IS21e 12=16dB(at f=2GHz) MAXIMUM RATINGS SYMBOL RATING UNIT


    OCR Scan     		S1D43 IS21e 1S21e Transistor S1D PDF

    1000w inverter PURE SINE WAVE schematic diagram

    Abstract: 1000w inverter PURE SINE WAVE schematic diagram smps 500w half bridge SCHEMATIC 1000w Power Semiconductor Applications Philips Semiconductors SCHEMATIC 1000w smps smps circuit diagram 48V SMPS 1000w "Power Semiconductor Applications" Philips BU2508 Transistor 500w SINE WAVE inverter schematic diagram smps 1kW
    Text: S.M.P.S. Power Semiconductor Applications Philips Semiconductors CHAPTER 2 Switched Mode Power Supplies 2.1 Using Power Semiconductors in Switched Mode Topologies including transistor selection guides 2.2 Output Rectification 2.3 Design Examples 2.4 Magnetics Design


    Original     		PDF

    ARF1511

    Abstract: 225MH
    Text: D1 ARF1511 D3 D3 D1 G1 G3 S1D2 G3 G1 S3D4 ARF1511 S1D2 G2 S3D4 G4 RF POWER MOSFET S2 FULL-BRIDGE S4 380V G2 G4 S2 S4 750W 40MHz The ARF1511 is four RF power transistor arranged in an H-Bridge configuration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator and amplifier applications up to 40


    Original     		ARF1511 40MHz ARF1511 125lb 225MH PDF

    power transistor 1802

    Abstract: ARF1511 750w planar transistor C 4927 rf power generator ARF 250v 1500w
    Text: D1 ARF1511 D3 D3 D1 G1 G3 S1D2 G3 G1 S3D4 ARF1511 S1D2 G2 S3D4 G4 RF POWER MOSFET S2 FULL-BRIDGE S4 380V G2 G4 S2 S4 750W 40MHz The ARF1511 is four RF power transistor arranged in an H-Bridge configuration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator and amplifier applications up to 40


    Original     		ARF1511 40MHz ARF1511 power transistor 1802 750w planar transistor C 4927 rf power generator ARF 250v 1500w PDF

    Untitled

    Abstract: No abstract text available
    Text: D1 ARF1510 D3 G1 D3 D1 G3 S1D2 G3 G1 S3D4 ARF1510 S1D2 G2 S3D4 G4 RF POWER MOSFET S2 FULL-BRIDGE S4 400V G2 G4 S2 S4 750W 40MHz The ARF1510 is four RF power transistor arranged in an H-Bridge configuration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator and amplifier applications up to 40


    Original     		ARF1510 40MHz ARF1510 125lb PDF

    Untitled

    Abstract: No abstract text available
    Text: D1 ARF1510 D3 G1 D3 D1 G3 S1D2 G3 G1 S3D4 ARF1510 S1D2 G2 S3D4 G4 RF POWER MOSFET S2 FULL-BRIDGE S4 400V G2 G4 S2 S4 750W 40MHz The ARF1510 is four RF power transistor arranged in an H-Bridge configuration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator and amplifier applications up to 40


    Original     		ARF1510 40MHz ARF1510 PDF

    AMPLIFIER 1500w

    Abstract: ARF1510 15VCrss
    Text: D1 ARF1510 D3 G1 S1D2 G3 G1 S3D4 ARF1510 S1D2 G2 RF POWER MOSFET D3 D1 G3 S3D4 G4 S2 G2 G4 S2 S4 S4 FULL-BRIDGE 400V 750W 40MHz The ARF1510 is four RF power transistor arranged in an H-Bridge configuration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator and amplifier applications up to 40 MHz.


    Original     		ARF1510 40MHz ARF1510 125lb AMPLIFIER 1500w 15VCrss PDF

    transistor 2N5952

    Abstract: transistor KSP44 bc558 zener diode reference guide 1n967b schottky 1n5248 KBL BRIDGE RECTIFIER 005 FYPF2004DN BAV99Wt1g BC337
    Text: Small Signal Transistors & Diodes Selection Guide Fairchild Semiconductor, a long-time, leading global supplier of high performance semiconductors, offers a broad range of small signal transistor and diode products—from JFETs, Schottky, and rectifiers, to RF transistors, TRIACs and more. You will not only find the performance that you want, you will also


    Original     		PDF

    f0r1a

    Abstract: tt 18934 2SK786 Transistor S1D F0R1 111IN
    Text: 6427525 Tfl N E C ELECTRONICS D Ë | b M 27525 INC Ü Q 1 AT34 gsQ 13934 T-39-13 q T . PRELIMINARY SPECIFICATION MOS FIELD EFFECT ELECTRON DEVICE TRANSISTOR 2SK786 FAST SWITCHING N - C H A N N E L S I L I C O N POWER MOS Features Suitable for switching power supplies,


    OCR Scan     		Jb42752S T-39-13 2SK786 f0r1a tt 18934 2SK786 Transistor S1D F0R1 111IN PDF

    12v class d amplifier 70W

    Abstract: HIP2060AS1 HIP4080A HIP2060 HIP2060AS2 MO-169 AN8610 1350P
    Text: HIP2060 S E M I C O N D U C T O R 60V, 10A Half Bridge Power MOSFET Array May 1997 Features Packages JEDEC TS-001AA ALTERNATE VERSION HIP2060 AS1 • Two 10A Power MOS N-Channel Transistors • Output Voltage to 60V 54 • rDS(ON) . . . . . .0.135Ω Max Per Transistor at VGS = 15V


    Original     		HIP2060 TS-001AA HIP2060 100mJ MO-169 1-800-4-HARRIS 12v class d amplifier 70W HIP2060AS1 HIP4080A HIP2060AS2 AN8610 1350P PDF

    KB2511B

    Abstract: S1D2511B01 S1D2511B01-A0B0 transistor horizontal section tv
    Text: DEFLECTION PROCESSOR FOR MULTISYNC MONITORS S1D2511B01 DEFLECTION PROCESSOR 32-SDIP-400 The S1D2511B01 is a monolithc integrated circuit assembled in 32 pins shrunk dual in line plastic package. This IC controls all the functions related to the horizontal and vertical deflection in multimodes or multifrequency computer display monitors.


    Original     		S1D2511B01 32-SDIP-400 S1D2511B01 S1D2511B KB2511B 150nF 470nF 74HCT125 MC14528 KB2511B S1D2511B01-A0B0 transistor horizontal section tv PDF

    flyback uc3842 sync

    Abstract: what are function of horizontal section of tv S1D2511B01 S1D2511B01-A0B0 uc3842 ic pin definition c0820pf transistor horizontal section tv UC3842 flyback
    Text: DEFLECTION PROCESSOR FOR MULTISYNC MONITORS S1D2511B01 DEFLECTION PROCESSOR 32-SDIP-400 The S1D2511B01 is a monolithc integrated circuit assembled in 32 pins shrunk dual in line plastic package. This IC controls all the functions related to the horizontal and vertical deflection in multimodes or multifrequency computer display monitors.


    Original     		S1D2511B01 32-SDIP-400 S1D2511B01 S1D2511B KB2511B 150nF 470nF 74HCT125 MC14528 flyback uc3842 sync what are function of horizontal section of tv S1D2511B01-A0B0 uc3842 ic pin definition c0820pf transistor horizontal section tv UC3842 flyback PDF

    vertical section

    Abstract: transistor 6w capacitor 100uF/16V ic 1N4148 pin configuration 1N4148 S1D2147A01 S1D2147A01-A0B0 S1D2147
    Text: DEFLECTION PROCESSOR FOR MULTISYNC MONITORS S1D2147A01 DEFLECTION PROCESSOR 42-SDIP-600 The S1D2147A01is a monolithic integrated circuit assembled in a 42 pins shrunk dual in line plastic package. The goal of this IC is to control all the functions related to the


    Original     		S1D2147A01 42-SDIP-600 S1D2147A01is S1D2147A01-A0B0 42-SDIP 100pF 470uF 100nF 100uF vertical section transistor 6w capacitor 100uF/16V ic 1N4148 pin configuration 1N4148 S1D2147A01 S1D2147A01-A0B0 S1D2147 PDF

    c 103 mosfet

    Abstract: silicon carbide 1200-VOLT QJD1210006
    Text: QJD1210006 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Silicon Carbide MOSFET Module 100 Amperes/1200 Volts A Y D K K K Y F S2 G2 U S2 D1 Z AB H M AA Q EB UU J G1 S1 S1D2 H AC Q P U AD G N S - NUTS (3 TYP)


    Original     		QJD1210006 Amperes/1200 c 103 mosfet silicon carbide 1200-VOLT PDF

    silicon carbide

    Abstract: 1200v mosfet 100A inverter mosfet
    Text: QJD1210007 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Silicon Carbide MOSFET Module 100 Amperes/1200 Volts A Y D K K K Y F S2 G2 U S2 D1 Z AB H M AA Q EB UU J G1 S1 S1D2 H AC Q P U AD G N S - NUTS (3 TYP)


    Original     		QJD1210007 Amperes/1200 silicon carbide 1200v mosfet 100A inverter mosfet PDF

    2sc3052ef

    Abstract: 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor
    Text: Small Signal Discretes Selection Guide [ www.infineon.com/smallsignaldiscretes ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 Schottky Diodes 18 ESD and EMI Protection Devices and Filters


    Original     		24GHz BF517 B132-H8248-G5-X-7600 2sc3052ef 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor PDF

    MOSFET 1000 VOLTS

    Abstract: QJD1210006 MOSFET 20V 100A schottky diode 100A silicon carbide mosfet transistor 800 volts.300 amperes
    Text: QJD1210006 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 Silicon Carbide MOSFET Module 100 Amperes/1200 Volts A Y D K K K Y F S2 G2 U S2 D1 Z AB H M AA Q EB UU J G1 S1 S1D2 H AC Q P U AD G N S - NUTS (3 TYP) T - (4 TYP)


    Original     		QJD1210006 Amperes/1200 MOSFET 1000 VOLTS MOSFET 20V 100A schottky diode 100A silicon carbide mosfet transistor 800 volts.300 amperes PDF

    S1D13706F00A

    Abstract: GH1117-ND gh1117 TSW-117-05G-D smd transistor ab2 74HCT244 SMD smd sot-23 2A1 40 pin LCD connector IO135 voltage regulator sot 223
    Text: S1D13706 Embedded Memory LCD Controller S5U13706P00C100 Evaluation Board User Manual Document Number: X31B-G-021-01 Status: Revision 1.1 Issue Date: 2009/03/03 SEIKO EPSON CORPORATION 2007 - 2009. All Rights Reserved. Information in this document is subject to change without notice. You may download and use this document, but only for your own use in


    Original     		S1D13706 S5U13706P00C100 X31B-G-021-01 S1D13706 S1D13706F00A GH1117-ND gh1117 TSW-117-05G-D smd transistor ab2 74HCT244 SMD smd sot-23 2A1 40 pin LCD connector IO135 voltage regulator sot 223 PDF

    scientific imaging technologies

    Abstract: scientific imaging technologies inc TRANSISTOR S1d TRANSISTOR S1A 64 SI-424A SI-424 mpp schematic TRANSISTOR S1A 41
    Text: SCIENTIFIC IMAGING TECHNOLOGIES, INC. 2048 x 2048 pixel format 24µm square • Front-illuminated or thinned, back-illuminated versions ■ Unique thinning and Quantum Efficiency enhancement processes ■ Excellent QE from IR to UV ■ Anti-reflection coating


    Original     		SI-424A 1E-02 1E-03 1E-04 1E-05 1E-06 1E-07 1E-08 1E-01 scientific imaging technologies scientific imaging technologies inc TRANSISTOR S1d TRANSISTOR S1A 64 SI-424 mpp schematic TRANSISTOR S1A 41 PDF

    AIRBORNE DME

    Abstract: transistor SMD 12W MOSFET transistor SMD 12W smd transistor code 12w RF Transistor S10-12
    Text: FEATURES ! GE PACKAGE Silicon MOSFET Technology Operation from 24V to 50V High Power Gain Extreme Ruggedness Internal Input and Output Matching Excellent Thermal Stability All Gold Bonding Scheme Pb-free and RoHS Compliant TYPICAL PERFORMANCE Table 1: Typical RF Performance in broadband text fixture at 25°C temperature with


    Original     		HVV1012-550 1025MHz 1150MHz. AIRBORNE DME transistor SMD 12W MOSFET transistor SMD 12W smd transistor code 12w RF Transistor S10-12 PDF