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Integrated Silicon Solution Inc IS21ES08GA-JCLI-TR IC FLASH 64GBIT EMMC 153VFBGA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IS21ES08GA-JCLI-TR	Cut Tape	2,285		1	1 $10.67 10 $9.471 100 $8.4036 1000 $7.45348 10000 $7.45348	Buy Now
	IS21ES08GA-JCLI-TR	Digi-Reel	2,285		1	1 $10.67 10 $9.471 100 $8.4036 1000 $7.45348 10000 $7.45348	Buy Now
	IS21ES08GA-JCLI-TR	Reel	2,000		2,000	1 - 10 - 100 - 1000 - 10000 $7.18825	Buy Now
Mouser Electronics	IS21ES08GA-JCLI-TR		3,194			1 $10.45 10 $9.39 100 $8.25 1000 $7.44 10000 $7.18	Buy Now
Win Source Electronics	IS21ES08GA-JCLI-TR		6,651			1 - 10 $7.9647 100 $5.3098 1000 $5.3098 10000 $5.3098	Buy Now
Integrated Silicon Solution Inc IS21ES08GA-JQLI-TR IC FLASH 64GBIT EMMC 100LFBGA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IS21ES08GA-JQLI-TR	Digi-Reel	1,735		1	1 $10.14 10 $9.388 100 $8.034 1000 $7.55882 10000 $7.55882	Buy Now
	IS21ES08GA-JQLI-TR	Cut Tape	1,735		1	1 $10.14 10 $9.388 100 $8.034 1000 $7.55882 10000 $7.55882	Buy Now
	IS21ES08GA-JQLI-TR	Reel	1,000		1,000	1 - 10 - 100 - 1000 $7.30759 10000 $7.30759	Buy Now
Avnet Americas	IS21ES08GA-JQLI-TR	Reel		10 Weeks	1,000	1 - 10 - 100 - 1000 $7.0686 10000 $6.9258	Buy Now
Mouser Electronics	IS21ES08GA-JQLI-TR		1,146			1 $9.97 10 $9.24 100 $7.9 1000 $7.18 10000 $7.18	Buy Now
Newark	IS21ES08GA-JQLI-TR	Bulk			1,000	1 - 10 - 100 - 1000 $7.14 10000 $7.14	Buy Now
Avnet Asia	IS21ES08GA-JQLI-TR			12 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote

Avnet Silica	IS21ES08GA-JQLI-TR		1,000	14 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
New Advantage Corporation	IS21ES08GA-JQLI-TR		2,000		1	1 - 10 - 100 - 1000 $11 10000 $10.18	Buy Now
Integrated Silicon Solution Inc IS21ES08GA-JQLI IC FLASH 64GBIT EMMC 100LFBGA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IS21ES08GA-JQLI	Tray	411		1	1 $10.67 10 $9.471 100 $8.41245 1000 $7.46133 10000 $7.46133	Buy Now
Avnet Americas	IS21ES08GA-JQLI	Tray	828	10 Weeks	98	1 - 10 - 100 $8.39916 1000 $7.33223 10000 $7.33223	Buy Now
	IS21ES08GA-JQLI	Bulk		11 Weeks, 3 Days	1	1 $10.61 10 $9.82 100 $9.55 1000 $8.4 10000 $8.4	Buy Now
Mouser Electronics	IS21ES08GA-JQLI		434			1 $10.64 10 $9.48 100 $8.36 1000 $7.46 10000 $7.46	Buy Now
Verical	IS21ES08GA-JQLI		6		6	1 - 10 $9.24 100 $9.24 1000 $9.24 10000 $9.24	Buy Now
Arrow Electronics	IS21ES08GA-JQLI		6	10 Weeks	6	1 - 10 $8.484 100 $7.544 1000 $6.754 10000 $6.686	Buy Now

Newark	IS21ES08GA-JQLI	Bulk	88		1	1 $10.61 10 $9.82 100 $9.55 1000 $7.9 10000 $7.9	Buy Now
Avnet Asia	IS21ES08GA-JQLI			10 Weeks	98	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Silica	IS21ES08GA-JQLI			14 Weeks	98	1 - 10 - 100 - 1000 - 10000 -	Buy Now
New Advantage Corporation	IS21ES08GA-JQLI		1,130		1	1 - 10 - 100 $11 1000 $11 10000 $10.18	Buy Now
Integrated Silicon Solution Inc IS21ES08GA-JCLI IC FLASH 64GBIT EMMC 153VFBGA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IS21ES08GA-JCLI	Tray	347		1	1 $10.67 10 $9.471 100 $8.8135 1000 $7.76529 10000 $7.42936	Buy Now
Mouser Electronics	IS21ES08GA-JCLI		5,413			1 $10.89 10 $9.67 100 $8.39 1000 $7.93 10000 $7.93	Buy Now
Newark	IS21ES08GA-JCLI	Bulk	152		1	1 $10.55 10 $9.77 100 $8.92 1000 $7.86 10000 $7.86	Buy Now
Avnet Asia	IS21ES08GA-JCLI			10 Weeks	152	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Silica	IS21ES08GA-JCLI		456	17 Weeks	152	1 - 10 - 100 - 1000 - 10000 -	Buy Now

New Advantage Corporation	IS21ES08GA-JCLI		2,365		1	1 - 10 - 100 - 1000 $7.86 10000 $7.27	Buy Now
Win Source Electronics	IS21ES08GA-JCLI		6,653			1 - 10 $10.4507 100 $6.9672 1000 $6.9672 10000 $6.9672	Buy Now
Integrated Silicon Solution Inc IS21EF08G-JCLI IC FLASH 64MBIT EMMC 153FBGA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IS21EF08G-JCLI	Tray	123		1	1 $12.9 10 $8.9 100 $6.84225 1000 $6.43748 10000 $6.43748	Buy Now
Mouser Electronics	IS21EF08G-JCLI		439			1 $12.45 10 $8.9 100 $6.44 1000 $6.43 10000 $6.43	Buy Now
Avnet Asia	IS21EF08G-JCLI			10 Weeks	152	1 - 10 - 100 - 1000 - 10000 -	Get Quote

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IS21E Datasheets (13)

Part	Manufacturer	Description	Datasheet Type	PDF
IS21ES04G-JCLI	Integrated Silicon Solution	Integrated Circuits (ICs) - Memory - IC FLASH 32G EMMC 153VFBGA	Original	PDF
IS21ES04G-JCLI-TR	Integrated Silicon Solution	Integrated Circuits (ICs) - Memory - IC FLASH 32G EMMC 153VFBGA	Original	PDF
IS21ES04G-JQLI	Integrated Silicon Solution	IC FLASH 32GBIT EMMC 100LFBGA	Original	PDF
IS21ES08G-JCLI	Integrated Silicon Solution	Integrated Circuits (ICs) - Memory - IC FLASH 64G EMMC 153VFBGA	Original	PDF
IS21ES08G-JCLI-TR	Integrated Silicon Solution	Integrated Circuits (ICs) - Memory - IC FLASH 64G EMMC 153VFBGA	Original	PDF
IS21ES08G-JQLI	Integrated Silicon Solution	IC FLASH 64GBIT EMMC 100LFBGA	Original	PDF
IS21ES16G-JCLI	Integrated Silicon Solution	IC FLASH 128GBIT EMMC 153VFBGA	Original	PDF
IS21ES16G-JQLI	Integrated Silicon Solution	IC FLASH 128GBIT EMMC 100LFBGA	Original	PDF
IS21ES32G-JCLI	Integrated Silicon Solution	IC FLASH 256GBIT EMMC 153VFBGA	Original	PDF
IS21ES32G-JQLI	Integrated Silicon Solution	IC FLASH 256GBIT EMMC 100LFBGA	Original	PDF
IS21ES64G-JCLI	Integrated Silicon Solution	IC FLASH 512GBIT EMMC 153VFBGA	Original	PDF
IS21ES64G-JQLI	Integrated Silicon Solution	IC FLASH 512GBIT EMMC 100LFBGA	Original	PDF
IS21ES64G-JQLI	Integrated Silicon Solution	IC FLASH 512GBIT EMMC 100LFBGA	Original	PDF

IS21E Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
2SC5507 Abstract: NE661M04 NE661M04-T2 S21E 842 ic 2912 Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR NE661M04 FEATURES • HIGH GAIN BANDWIDTH: fT = 25 GHz • HIGH POWER GAIN: IS21EI2 = 17 dB TYP at 2 GHz • LOW NOISE FIGURE: NF = 1.2 dB at 2 GHz • HIGH MAXIMUM STABLE GAIN: 22 dB @ 2 GHz •	Original	NE661M04 IS21EI2 OT-343 NE661M04 NE661M04-T2 24-Hour 2SC5507 NE661M04-T2 S21E 842 ic 2912	PDF
Untitled Abstract: No abstract text available Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE661M04 FEATURES • HIGH GAIN BANDWIDTH: fT = 25 GHz • HIGH POWER GAIN: IS21EI2 = 17 dB TYP at 2 GHz • LOW NOISE FIGURE: NF = 1.2 dB at 2 GHz • HIGH MAXIMUM STABLE GAIN: 22 dB @ 2 GHz • NEW LOW PROFILE M04 PACKAGE:	Original	IS21EI2 OT-343 NE661M04 NE661M04	PDF
transistor MJE 2955 Abstract: 842 ic SOT 663 footprint TRANSISTOR nf 842 Text: SILICON TRANSISTOR NE661M04 NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • HIGH GAIN BANDWIDTH: fT = 25 GHz HIGH POWER GAIN: IS21EI2 = 17 dB TYP at 2 GHz • LOW NOISE FIGURE: NF = 1.2 dB at 2 GHz • HIGH MAXIMUM STABLE GAIN: 22 dB @ 2 GHz • NEW LOW PROFILE M04 PACKAGE:	Original	NE661M04 IS21EI2 OT-343 NE661M04 2e-12 1e-11 08e-12 transistor MJE 2955 842 ic SOT 663 footprint TRANSISTOR nf 842	PDF
az 2732 132 Abstract: 2SC5507 NE661M04 NE661M04-T2-A S21E max10022 Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE661M04 FEATURES • HIGH GAIN BANDWIDTH: fT = 25 GHz • HIGH POWER GAIN: IS21EI2 = 17 dB TYP at 2 GHz • LOW NOISE FIGURE: NF = 1.2 dB at 2 GHz • HIGH MAXIMUM STABLE GAIN: 22 dB @ 2 GHz • NEW LOW PROFILE M04 PACKAGE:	Original	NE661M04 IS21EI2 OT-343 NE661M04 az 2732 132 2SC5507 NE661M04-T2-A S21E max10022	PDF
Untitled Abstract: No abstract text available Text: SILICON TRANSISTOR NE663M04 NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • HIGH GAIN BANDWIDTH: fT = 15 GHz HIGH POWER GAIN: IS21EI2 = 11 dB TYP at 2 GHz • LOW NOISE FIGURE: NF = 1.2 dB at 2 GHz • HIGH MAXIMUM STABLE GAIN: 15 dB @ 2 GHz • •	Original	NE663M04 IS21EI2 OT-343 NE663M04	PDF
417-116 Abstract: 2SC5509 NE663M04 NE663M04-T2-A S21E Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE663M04 FEATURES • HIGH GAIN BANDWIDTH: fT = 15 GHz • HIGH POWER GAIN: IS21EI2 = 11 dB TYP at 2 GHz • LOW NOISE FIGURE: NF = 1.2 dB at 2 GHz • HIGH IP3: NF = 27 dBm at 2 GHz • HIGH MAXIMUM STABLE GAIN: 15 dB @ 2 GHz	Original	NE663M04 IS21EI2 OT-343 NE663M04 417-116 2SC5509 NE663M04-T2-A S21E	PDF
ca 9088 Abstract: 2SC5509 NE663M04 NE663M04-T2 S21E transistor c 6093 Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE663M04 FEATURES • HIGH GAIN BANDWIDTH: fT = 15 GHz • HIGH POWER GAIN: IS21EI2 = 11 dB TYP at 2 GHz • LOW NOISE FIGURE: NF = 1.2 dB at 2 GHz • HIGH IP3: NF = 27 dBm at 2 GHz • HIGH MAXIMUM STABLE GAIN: 15 dB @ 2 GHz	Original	NE663M04 IS21EI2 OT-343 NE663M04 ca 9088 2SC5509 NE663M04-T2 S21E transistor c 6093	PDF
ua 722 fc Abstract: 2SC5507 NE661M04 NE661M04-T2 S21E max10022 Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE661M04 FEATURES • HIGH GAIN BANDWIDTH: fT = 25 GHz • HIGH POWER GAIN: IS21EI2 = 17 dB TYP at 2 GHz • LOW NOISE FIGURE: NF = 1.2 dB at 2 GHz • HIGH MAXIMUM STABLE GAIN: 22 dB @ 2 GHz • NEW LOW PROFILE M04 PACKAGE:	Original	NE661M04 IS21EI2 OT-343 NE661M04 ua 722 fc 2SC5507 NE661M04-T2 S21E max10022	PDF
314-106 Abstract: transistor c 6093 417-116 2SC5509 NE663M04 NE663M04-T2 S21E 10318 SOT-343 6428 flat Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR NE663M04 FEATURES • HIGH GAIN BANDWIDTH: fT = 17 GHz • HIGH POWER GAIN: IS21EI2 = 11 dB TYP at 2 GHz • LOW NOISE FIGURE: NF = 1.2 dB at 2 GHz • HIGH MAXIMUM STABLE GAIN: 15 dB @ 2 GHz •	Original	NE663M04 IS21EI2 OT-343 NE663M04 prov88 24-Hour 314-106 transistor c 6093 417-116 2SC5509 NE663M04-T2 S21E 10318 SOT-343 6428 flat	PDF
NE688 Abstract: S21E UPA814T UPA814T-T1 Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA814T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE688 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz • HIGH GAIN BANDWIDTH: fT = 9 GHz • HIGH COLLECTOR CURRENT: 100 mA	Original	UPA814T NE688 UPA814T IS21eI2 IS21EI UPA814T-T1 24-Hour S21E UPA814T-T1	PDF
transistor Bf 444 Abstract: LB 1639 651 lem amp 827 578 3 pin DATASHEET OF BJT 547 transistor bf 422 NPN NE856 S21E UPA801T UPA801T-T1 Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA801T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz • HIGH GAIN: \|S21E\|2 = 9.0 dB TYP at 1 GHz • HIGH COLLECTOR CURRENT: 100mA	Original	UPA801T NE856 100mA UPA801T 24-Hour transistor Bf 444 LB 1639 651 lem amp 827 578 3 pin DATASHEET OF BJT 547 transistor bf 422 NPN S21E UPA801T-T1	PDF
Untitled Abstract: No abstract text available Text: TO SHIBA 2SC4394 Transistor Silicon NPN Epitaxial Planar Type VHF ~ UHF Band Low Noise Amplifier Applications F e a tu re s • L o w N oise Figure, H igh Gain • N F = 1.1 d B , IS21el2 = 11 dB f= 1GHz A b s o lu te M a x im u m R a tin g s (Ta = 2 5 C )	OCR Scan	2SC4394 IS21el2	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA 2SC4322 Transistor U n it in m m i-0 5 2 5 -0 3 -0.25 1.5 - 0 . 1 5 , Silicon NPN Epitaxial Planar Type VHF ~ UHF Band Low Noise Amplifier Applications - o o o Egi F e a tu re s • Low Noise Figure, High Gain + • NF = 1 ,8dB, IS21ei2 = 7.5dB f = 2GHz	OCR Scan	2SC4322 IS21ei2	PDF
ic power 22E Abstract: power 22E IC 12E MARKING Text: SILICON NPN EPITAXIAL PLANAR TYPE 2SC3607 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. Unit in mm FEATURES : 1.6MAX 4.6 MAX. . Low Noise Figure, High Gain. 0.4±a05 1.7MAX. . N F = 1 .ldB, IS21e l2=9.5dB f=lGHz MAXI M U M RATINGS (Ta=25°C) SYMBOL CHARACTERISTIC	OCR Scan	2SC3607 IS21e CL4-a05 ic power 22E power 22E IC 12E MARKING	PDF

transistor bf 458 Abstract: Transistor B C 458 Q555 transistor 3247 NF NPN Silicon Power transistor TO-3 Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UpA8 6T OUTLINE DIMENSIONS (Units in mm) SMALL PACKAGE STYLE: P A C K A G E OUTLINE S06 (Top View) 2 NE685 Die in a 2 mm x 1.25 mm package LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz HIGH GAIN: IS21EI2 = 8.5 dB TYP at 2 GHz	OCR Scan	NE685 IS21EI2 UPA806T 4e-12 18e-12 2e-12 UPA806T transistor bf 458 Transistor B C 458 Q555 transistor 3247 NF NPN Silicon Power transistor TO-3	PDF
VHF-UHF Band Low Noise Amplifier Abstract: marking lob Text: 2SC4315 SILICON NPN EPITAXIAL PLANAR TYPE VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS . Low Noise . NF=l.ldB, Unit in mm + 0.2 2.9 -0.3 Figure, High Gain. IS21ei 2=14dB f=lGHz i 2 »-E a 0.55 M A X I M U M RATINGS (Ta=25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage	OCR Scan	2SC4315 IS21ei 012IGURE VHF-UHF Band Low Noise Amplifier marking lob	PDF
Untitled Abstract: No abstract text available Text: SILICON NPN EPITAXIAL PLANAR TYPE VHF'UHF 2SC3268 BAND LOW NOISE AMPLIFIER APPLICATIONS. Unit in mm FEATURES : L 6 MAX 4.6 max . . NF=1.7dB, IS21el2=15.0dB f=500MHz . NF=2dB, \|S2Xel2=9.5dB (f=1000MHz) + 0108 MAXIMUM RATINGS (Ta=25°C) (145 — Cl05 CHARACTERISTIC	OCR Scan	2SC3268 IS21el2 500MHz) 1000MHz) a4-a05	PDF
transistor L44 Abstract: chip die npn transistor ma4t856 l44 transistor npn C 1740 Text: V a n A M P ct o m p a n y Moderate Power High fT NPN Silicon Transistor MA4T856 Series V3.00 Package Outline Features • High Output Power - 16 dBm PidB @ 1 GHz - 10 dBm PldB @ 2 GHz • High Gain Bandwidth Product • 8-9 GHz fx • High Power Gain - IS21EI2 = 15 dB @ 1 GHz	OCR Scan	IS21EI2 MA4T856 OT-23 OT-143 avail-8883 transistor L44 chip die npn transistor l44 transistor npn C 1740	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA 2SC3606 Transistor U n it in m m Silicon NPN Epitaxial Planar Type VHF-UHF Band Low Noise Amplifier Applications -El- F e a tu re s • Low Noise Figure, High Gain • N F = 1 .1 d B , IS21el2 = 1 1 d B f = 1GHz -EE- A b s o lu te M a x im u m R a tin g s (Ta = 2 5 C )	OCR Scan	2SC3606 IS21el2	PDF
2SC4392 Abstract: No abstract text available Text: 2SC4392 SILICQN NPN EPITAXIAL PLANAR t y p e t r a n s is t o r U H F - C B A N D L O W NOISE A M P LIF IE R A PP LIC A T IO N S . • • • U n it in mm High Gain : IS21el2= 12dB Typ. Low Noise Figure: NF = 2.3dB (Typ.) High frp : fr = 6.5GHz(Typ.) M A X IM U M R A TIN G S (Ta = 25°C)	OCR Scan	2SC4392 IS21el2= SC-70 S21el2 2SC4392	PDF
IS21E Abstract: Transistor S1D Text: TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE S1D43 tentative OVHF UHF BAND LOW NOISE AM P L I F IE R APLICATIONS Iß I ooWöI Low Noise : Figure : NF=1.5dB(at f=2GHz) High Gain : IS21e 12=16dB(at f=2GHz) MAXIMUM RATINGS SYMBOL RATING UNIT	OCR Scan	S1D43 IS21e 1S21e Transistor S1D	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA 2SC4317 Transistor U n it in m m Silicon NPN Epitaxial Planar Type VHF ~ UHF Band Low Noise Amplifier Applications F e a tu re s • Low Noise Figure, High Gain • NF = 1.1dB, IS21el2 = 1 3 d B f= 1GHz A b s o lu te M a x im u m R a tin g s (Ta = 2 5 C )	OCR Scan	2SC4317 IS21el2	PDF
ne666 Abstract: 21421 Series ic 74600 NE686 Text: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE686 SERIES FEATURES_ • HIGH GAIN BANDWIDTH PRODUCT: fTof 15 GHz • LOW VOLTAGE/LOW CURRENT OPERATION • HIGH INSERTION POWER GAIN: IS21EI2 = 12 dB @ 2 V, 7 mA, 2 GHz IS21EI2 = 11 dB @ 1 V, 5 mA, 2 GHz	OCR Scan	IS21EI2 NE686 OT-143) NE68618-T1 NE68619-T1 NE68630-T1 ne666 21421 Series ic 74600	PDF
tt 18934 Abstract: 30i sot23 5140 SN 74500 Text: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE686 SERIES FEATURES_ • HIGH GAIN BANDWIDTH PRODUCT: ft of 15 GHz • LOW VOLTAGE/LOW CURRENT OPERATION • HIGH INSERTION POWER GAIN: IS21El2 = 12 dB @ 2 V, 7 mA, 2 GHz IS21EI2 =11 dB @ 1 V, 5m A, 2G H z	OCR Scan	IS21El2 IS21EI2 NE686 NE68618-T1 NE68619-T1 NE68630-T1 NE68633-T1 tt 18934 30i sot23 5140 SN 74500	PDF

IS21E Search Results

IS21E Price and Stock

Integrated Silicon Solution Inc IS21ES08GA-JCLI-TR

Integrated Silicon Solution Inc IS21ES08GA-JQLI-TR

Integrated Silicon Solution Inc IS21ES08GA-JQLI

Integrated Silicon Solution Inc IS21ES08GA-JCLI

Integrated Silicon Solution Inc IS21EF08G-JCLI

IS21E Datasheets (13)

IS21E Datasheets Context Search

2SC5507

Untitled

transistor MJE 2955

az 2732 132

Untitled

417-116

ca 9088

ua 722 fc

314-106

NE688

transistor Bf 444

Untitled

Untitled

ic power 22E

transistor bf 458

VHF-UHF Band Low Noise Amplifier

Untitled

transistor L44

Untitled

2SC4392

IS21E

Untitled

ne666

tt 18934