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    TRANSISTOR SMD MARKING G1 Search Results

    TRANSISTOR SMD MARKING G1 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR SMD MARKING G1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TRANSISTOR SMD MARKING g1

    Abstract: CMBT5551 smd transistor g1
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBT5551 SILICON N–P–N HIGH–VOLTAGE TRANSISTOR N–P–N transistor Marking CMBT5551 = G1 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration


    Original     		PDF ISO/TS16949 OT-23 CMBT5551 C-120 TRANSISTOR SMD MARKING g1 CMBT5551 smd transistor g1

    TRANSISTOR SMD MARKING g1

    Abstract: SMD TRANSISTOR G1 g1 smd transistor smd transistor t A1 sot-23 npn ts 4141 TRANSISTOR smd cmbt5551 MARKING SMD TRANSISTOR P smd transistor 304 smd transistor marking g1 TRANSISTOR SMD g1
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5551 SILICON N–P–N HIGH–VOLTAGE TRANSISTOR N–P–N transistor Marking CMBT5551 = G1 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR


    Original     		PDF OT-23 CMBT5551 C-120 TRANSISTOR SMD MARKING g1 SMD TRANSISTOR G1 g1 smd transistor smd transistor t A1 sot-23 npn ts 4141 TRANSISTOR smd cmbt5551 MARKING SMD TRANSISTOR P smd transistor 304 smd transistor marking g1 TRANSISTOR SMD g1

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5551 SILICON N–P–N HIGH–VOLTAGE TRANSISTOR N–P–N transistor Marking CMBT5551 = G1 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm


    Original     		PDF OT-23 CMBT5551 C-120

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5551 SILICON N–P–N HIGH–VOLTAGE TRANSISTOR N–P–N transisto r Marking CMBT5551 = G1 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR


    Original     		PDF OT-23 CMBT5551 C-120

    smd transistor marking g1

    Abstract: TRANSISTOR SMD MARKING g1 smd transistor g1
    Text: Transistors Transistor T SMD Type Product specification KMBT5551 MMBT5551 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Pb-Free Packages are Available 1 0.55 High Voltage Transistors +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 1.Base


    Original     		PDF KMBT5551 MMBT5551) OT-23 100MHz smd transistor marking g1 TRANSISTOR SMD MARKING g1 smd transistor g1

    g1 TRANSISTOR SMD MARKING CODE

    Abstract: marking code ff SMD Transistor TRANSISTOR SMD MARKING CODE BS t marking code ff p SMD Transistor smd marking mop NF marking TRANSISTOR SMD c4 marking TRANSISTOR SMD nf c1 marking TRANSISTOR SMD nf c4 BF998 g1 7 TRANSISTOR SMD MARKING CODE
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BF998; BF998R Silicon N-channel dual-gate MOS-FETs Product specification Supersedes data of April 1991 File under Discrete Semiconductors, SC07 1996 Aug 01 Philips Semiconductors Product specification Silicon N-channel dual-gate MOS-FETs


    Original     		PDF BF998; BF998R BF998R MAM039 BF998 g1 TRANSISTOR SMD MARKING CODE marking code ff SMD Transistor TRANSISTOR SMD MARKING CODE BS t marking code ff p SMD Transistor smd marking mop NF marking TRANSISTOR SMD c4 marking TRANSISTOR SMD nf c1 marking TRANSISTOR SMD nf c4 g1 7 TRANSISTOR SMD MARKING CODE

    TRANSISTOR SMD MARKING g1

    Abstract: smd transistor g1 ff 0401 transistor g1 smd TRANSISTOR marking G1 sot-23 G1 SOT-23 G1 TRANSISTOR ff 0401 smd transistor marking g1 BFS20
    Text: Transistors SMD Type NPN Medium Frequency Transistor KFS20 BFS20 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Low current (max. 25 mA) 0.4 3 Features 1 Very low feedback capacitance (typ. 350 fF). 0.55 Low voltage (max. 20 V) 2 +0.1


    Original     		PDF KFS20 BFS20) OT-23 TRANSISTOR SMD MARKING g1 smd transistor g1 ff 0401 transistor g1 smd TRANSISTOR marking G1 sot-23 G1 SOT-23 G1 TRANSISTOR ff 0401 smd transistor marking g1 BFS20

    Untitled

    Abstract: No abstract text available
    Text: IC MOSFET SMD Type Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor SI8822 TSSOP-8 • Features Unit: mm ● VDS V = 20V ● ID = 7A (VGS=10V) ● RDS(ON) ＜ 21mΩ (VGS = 10V) ● RDS(ON) ＜ 24mΩ (VGS = 4.5V) ● RDS(ON) ＜ 32mΩ (VGS = 2.5V)


    Original     		PDF SI8822 30VGS

    SMD TRANSISTOR MARKING code TC

    Abstract: SMD mosfet MARKING code C6 65C6190 g1 TRANSISTOR SMD MARKING CODE IPP65R190C6 IPB65R190C6 Diode type SMD marking SJ transistor smd code marking KEY Diode SMD SJ 19 ipa65r
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V CoolMOS C6 Power Transistor IPx65R190C6 Data Sheet Rev. 2.0, 2011-05-09 Final Industrial & Multimarket 650V CoolMOS™ C6 Power Transistor 1 IPA65R190C6, IPB65R190C6 IPI65R190C6, IPP65R190C6


    Original     		PDF IPx65R190C6 IPA65R190C6, IPB65R190C6 IPI65R190C6, IPP65R190C6 IPW65R190C6 SMD TRANSISTOR MARKING code TC SMD mosfet MARKING code C6 65C6190 g1 TRANSISTOR SMD MARKING CODE Diode type SMD marking SJ transistor smd code marking KEY Diode SMD SJ 19 ipa65r

    Untitled

    Abstract: No abstract text available
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V CoolMOS C6 Power Transistor IPx65R190C6 Data Sheet Rev. 2.0, 2011-05-09 Final Industrial & Multimarket 650V CoolMOS™ C6 Power Transistor 1 IPA65R190C6, IPB65R190C6 IPI65R190C6, IPP65R190C6


    Original     		PDF IPx65R190C6 IPA65R190C6, IPB65R190C6 IPI65R190C6, IPP65R190C6 IPW65R190C6

    65E6190

    Abstract: No abstract text available
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 650V CoolMOS E6 Power Transistor IPx65R190E6 Data Sheet Rev. 2.0, 2011-05-13 Final Industrial & Multimarket 650V CoolMOS™ E6 Power Transistor 1 IPA65R190E6, IPB65R190E6 IPI65R190E6, IPP65R190E6


    Original     		PDF IPx65R190E6 IPA65R190E6, IPB65R190E6 IPI65R190E6, IPP65R190E6 IPW65R190E6 65E6190

    6r3k3c6

    Abstract: transistor SMD MARKING CODE 772 IPD60R3K3C6 TRANSISTOR SMD MARKING CODE 42 JESD22
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPD60R3K3C6 Data Sheet Rev. 2.0, 2010-07-21 Final Industrial & Multimarket 600V CoolMOS™ C6 Power Transistor 1 IPD60R3K3C6 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs,


    Original     		PDF IPD60R3K3C6 6r3k3c6 transistor SMD MARKING CODE 772 IPD60R3K3C6 TRANSISTOR SMD MARKING CODE 42 JESD22

    Untitled

    Abstract: No abstract text available
    Text: IC SMD Type Product specification KFS20 BFS20 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Low current (max. 25 mA) 0.4 3 Features 1 0.55 Low voltage (max. 20 V) 2 Very low feedback capacitance (typ. 350 fF). +0.1 0.95-0.1 +0.1 1.9-0.1


    Original     		PDF KFS20 BFS20) OT-23

    6r2k0c6

    Abstract: IPD60R2K0C6 g1 TRANSISTOR SMD MARKING CODE JESD22
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPD60R2K0C6 Data Sheet Rev. 2.0, 2010-07-20 Final Industrial & Multimarket 600V CoolMOS™ C6 Power Transistor 1 IPD60R2K0C6 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs,


    Original     		PDF IPD60R2K0C6 6r2k0c6 IPD60R2K0C6 g1 TRANSISTOR SMD MARKING CODE JESD22

    6r1k4c6

    Abstract: IPD60R1K4C6 smd diode EG - 413 Diode SMD SJ 94 Diode SMD SJ 98 JESD22 MOSFET TRANSISTOR SMD MARKING CODE 11
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPD60R1K4C6 Data Sheet Rev. 2.0, 2010-07-19 Final Industrial & Multimarket 600V CoolMOS™ C6 Power Transistor 1 IPD60R1K4C6 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs,


    Original     		PDF IPD60R1K4C6 6r1k4c6 IPD60R1K4C6 smd diode EG - 413 Diode SMD SJ 94 Diode SMD SJ 98 JESD22 MOSFET TRANSISTOR SMD MARKING CODE 11

    2SK1589

    Abstract: 5V GATE TO SOURCE VOLTAGE MOSFET
    Text: MOSFET SMD Type MOS Field Effect Transistor 2SK1589 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 impedance. 0.55 Not necessary to consider driving current because of its high input +0.1 1.3-0.1 +0.1 2.4-0.1 Directly driven by Ics having a 5V power supply.


    Original     		PDF 2SK1589 OT-23 2SK1589 5V GATE TO SOURCE VOLTAGE MOSFET

    6R299P

    Abstract: IPL60R299CP 6r299 g1 smd diode
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOS CP Power Transistor IPL60R299CP Data Sheet Rev. 2.1, 2012-01-10 Final Industrial & Multimarket 600V CoolMOS™ CP Power Transistor 1 IPL60R299CP Description The CoolMOS™ CP series offers devices which provide all benefits of a fast


    Original     		PDF IPL60R299CP 150mm² 6R299P IPL60R299CP 6r299 g1 smd diode

    6R199P mosfet

    Abstract: IPL60R199CP mosfet 6R199 6R199 IPL60R199 6r199p TRANSISTOR SMD MARKING g1 Diode SMD SJ 99 ipl60r
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOS CP Power Transistor IPL60R199CP Data Sheet Rev. 2.1, 2011-12-20 Final Industrial & Multimarket 600V CoolMOS™ CP Power Transistor 1 IPL60R199CP Description The CoolMOS™ CP series offers devices which provide all benefits of a fast


    Original     		PDF IPL60R199CP 150mm² 6R199P mosfet IPL60R199CP mosfet 6R199 6R199 IPL60R199 6r199p TRANSISTOR SMD MARKING g1 Diode SMD SJ 99 ipl60r

    6R199P mosfet

    Abstract: mosfet 6R199 IPL60R199CP Benchmark MOSFETs
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOS CP Power Transistor IPL60R199CP Data Sheet Rev. 2.2, 2012-01-09 Final Industrial & Multimarket 600V CoolMOS™ CP Power Transistor 1 IPL60R199CP Description The CoolMOS™ CP series offers devices which provide all benefits of a fast


    Original     		PDF IPL60R199CP 150mm² 6R199P mosfet mosfet 6R199 IPL60R199CP Benchmark MOSFETs

    6R299P

    Abstract: No abstract text available
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOS CP Power Transistor IPL60R299CP Data Sheet Rev. 2.1, 2012-01-10 Final Industrial & Multimarket 600V CoolMOS™ CP Power Transistor 1 IPL60R299CP Description The CoolMOS™ CP series offers devices which provide all benefits of a fast


    Original     		PDF IPL60R299CP 150mm 6R299P

    IPL60R299CP

    Abstract: 6R299P ipl60r JESD22 6R29
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOS CP Power Transistor IPL60R299CP Data Sheet Rev. 2.0, 2010-10-01 Final Industrial & Multimarket 600V CoolMOS™ CP Power Transistor 1 IPL60R299CP Description The CoolMOS™ CP series offers devices which provide all benefits of a fast


    Original     		PDF IPL60R299CP 150mm² IPL60R299CP 6R299P ipl60r JESD22 6R29

    6r385P

    Abstract: IPL60R385CP JESD22 transistor 6R385P
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOS CP Power Transistor IPL60R385CP Data Sheet Rev. 2.0, 2010-10-01 Final Industrial & Multimarket 600V CoolMOS™ CP Power Transistor 1 IPL60R385CP Description The CoolMOS™ CP series offers devices which provide all benefits of a fast


    Original     		PDF IPL60R385CP 150mm² 6r385P IPL60R385CP JESD22 transistor 6R385P

    smd transistor g19

    Abstract: 2SK1657
    Text: MOSFET SMD Type MOS Field Effect Transistor 2SK1657 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 IGSS= 5nA MAX.@VGS= 3.0V +0.1 1.3-0.1 +0.1 2.4-0.1 Has low gate leakage current 0.4 3 Directly driven by Ics having a 3V power supply. 2 +0.1 0.95-0.1


    Original     		PDF 2SK1657 OT-23 smd transistor g19 2SK1657

    6R199

    Abstract: Diode SMD SJ 99
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOS CP Power Transistor IPL60R199CP Data Sheet Rev. 2.2, 2012-01-09 Final Industrial & Multimarket 600V CoolMOS™ CP Power Transistor 1 IPL60R199CP Description The CoolMOS™ CP series offers devices which provide all benefits of a fast


    Original     		PDF IPL60R199CP 150mm 6R199 Diode SMD SJ 99