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    TRANSISTOR SMD MJ 145 Search Results

    TRANSISTOR SMD MJ 145 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR SMD MJ 145 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS C7 650VCoolMOS™C7PowerTransistor IPL65R070C7 DataSheet Rev.2.0 Final PowerManagement&Multimarket 650VCoolMOS™C7PowerTransistor IPL65R070C7 1Description ThinPAK8x8


    Original     		PDF IPL65R070C7

    Untitled

    Abstract: No abstract text available
    Text: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS P6 600VCoolMOS™P6PowerTransistor IPL60R255P6 DataSheet Rev.2.0 Final PowerManagement&Multimarket 600VCoolMOS™P6PowerTransistor IPL60R255P6 1Description ThinPAK8x8


    Original     		PDF IPL60R255P6

    65C7065

    Abstract: No abstract text available
    Text: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS C7 650VCoolMOS™C7PowerTransistor IPP65R065C7 DataSheet Rev.2.0 Final PowerManagement&Multimarket 650VCoolMOS™C7PowerTransistor IPP65R065C7 1Description TO-220 tab


    Original     		PDF IPP65R065C7 O-220 65C7065

    Untitled

    Abstract: No abstract text available
    Text: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS C7 650VCoolMOS™C7PowerTransistor IPW65R065C7 DataSheet Rev.2.0 Final PowerManagement&Multimarket 650VCoolMOS™C7PowerTransistor IPW65R065C7 1Description TO-247


    Original     		PDF IPW65R065C7 O-247

    Untitled

    Abstract: No abstract text available
    Text: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS P6 600VCoolMOS™P6PowerTransistor IPW60R230P6 DataSheet Rev.2.0 Final PowerManagement&Multimarket 600VCoolMOS™P6PowerTransistor IPW60R230P6 1Description TO-247


    Original     		PDF IPW60R230P6 O-247

    Untitled

    Abstract: No abstract text available
    Text: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS C7 650VCoolMOS™C7PowerTransistor IPA65R065C7 DataSheet Rev.2.0 Final PowerManagement&Multimarket 650VCoolMOS™C7PowerTransistor IPA65R065C7 1Description TO-220FP


    Original     		PDF IPA65R065C7 O-220

    Untitled

    Abstract: No abstract text available
    Text: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS C7 650VCoolMOS™C7PowerTransistor IPZ65R065C7 DataSheet Rev.2.1 Final PowerManagement&Multimarket 650VCoolMOS™C7PowerTransistor IPZ65R065C7 1Description PG-TO247-4


    Original     		PDF IPZ65R065C7

    ipb65r065c7

    Abstract: No abstract text available
    Text: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS C7 650VCoolMOS™C7PowerTransistor IPB65R065C7 DataSheet Rev.2.0 Final PowerManagement&Multimarket 650VCoolMOS™C7PowerTransistor IPB65R065C7 1Description D²PAK


    Original     		PDF IPB65R065C7 ipb65r065c7

    TRANSISTOR SMD MARKING CODE RG

    Abstract: TRANSISTOR SMD CODE 6.8 BUK9
    Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology


    Original     		PDF BUK9614-55 OT404 BUK9614-55 /\\Roarer\root\data13\imaging\BITTING\cpl mismatch\20000819\081. \BUK9614-55 TRANSISTOR SMD MARKING CODE RG TRANSISTOR SMD CODE 6.8 BUK9

    SPP70N10L

    Abstract: SPB70N10L
    Text: SPB70N10L SPP70N10L Preliminary data SIPMOS Power Transistor • N-Channel • Enhancement mode • Avalanche rated • Logic Level • dv/dt rated • 175°C operating temperature Type VDS ID SPB70N10L 100 V 70 A SPP70N10L RDS on @ VGS Pin 1 Pin 2 Pin 3


    Original     		PDF SPB70N10L SPP70N10L P-TO263-3-2 Q67040-S4170 P-TO220-3-1 Q67040-S4175 SPP70N10L SPB70N10L

    s4142

    Abstract: transistor smd MJ 145 P-TO251-3-1 P-TO252 SPD28N03L SPU28N03L
    Text: SPD28N03L SPU28N03L Preliminary data SIPMOS  Power Transistor • N-Channel • Enhancement mode • Avalanche rated • Logic Level • dv/dt rated • 175°C operating temperature Type VDS ID SPD28N03L 30 V 28 A SPU28N03L RDS on @ VGS Pin 1 Pin 2 Pin 3


    Original     		PDF SPD28N03L SPU28N03L P-TO252 Q67040-S4139-A2 P-TO251-3-1 Q67040-S4142-A2 s4142 transistor smd MJ 145 P-TO252 SPD28N03L SPU28N03L

    SPB80N03L

    Abstract: tc 785 siemens SPP80N03L Q67040-S4735-A3
    Text: SPP80N03L SPB80N03L Preliminary data SIPMOS  Power Transistor • N-Channel • Enhancement mode • Avalanche rated • Logic Level • dv/dt rated • 175°C operating temperature Type VDS ID SPP80N03L 30 V 80 A SPB80N03L RDS on @ VGS 0.008 Ω VGS = 4.5 V


    Original     		PDF SPP80N03L SPB80N03L P-TO220-3-1 Q67040-S4735-A2 P-TO263-3-2 Q67040-S4735-A3 SPB80N03L tc 785 siemens SPP80N03L Q67040-S4735-A3

    Siemens DIODE E 1220

    Abstract: SPB30N03L SPP30N03L
    Text: SPP30N03L SPB30N03L Preliminary data SIPMOS  Power Transistor • N-Channel • Enhancement mode • Avalanche rated • Logic Level • dv/dt rated • 175°C operating temperature Type VDS ID SPP30N03L 30 V 30 A SPB30N03L RDS on @ VGS 0.028 Ω VGS = 4.5 V


    Original     		PDF SPP30N03L SPB30N03L P-TO220-3-1 Q67040-S4143-A2 P-TO263-3-2 Q67040-S4737-A3 Siemens DIODE E 1220 SPB30N03L SPP30N03L

    smps circuit diagram of 300W

    Abstract: layout 48 VOLT 150 AMP smps 48 VOLT 10 AMP smps 07n60 mosfet circuit diagrams AN-CoolMOS-04 ZVT Full bridge transformer IGBT 07N60 H-bridge 24 VOLT 80 AMP smps infineon cool MOSFET dynamic characteristic test 500 Watt Phase Shifted ZVT Power Converter
    Text: Application Note, V1.0, Apr. 2001 CoolMOS TM AN-CoolMOS-04 Introduction to Avalanche Considerations for CoolMOS TM in SMPS Applications Power Management & Supply N e v e r s t o p t h i n k i n g . Introduction to Avalanche Considerations for CoolMOSTM in SMPS Applications


    Original     		PDF AN-CoolMOS-04 2002-Sep. smps circuit diagram of 300W layout 48 VOLT 150 AMP smps 48 VOLT 10 AMP smps 07n60 mosfet circuit diagrams AN-CoolMOS-04 ZVT Full bridge transformer IGBT 07N60 H-bridge 24 VOLT 80 AMP smps infineon cool MOSFET dynamic characteristic test 500 Watt Phase Shifted ZVT Power Converter

    30N03L

    Abstract: 30N03 SPB30N03L SPP30N03L
    Text: SPP 30N03L SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS • Drain-Source on-state resistance RDS on 0.018 Ω Continuous drain current ID Enhancement mode • Avalanche rated 30 V 30 A • Logic Level • dv/dt rated


    Original     		PDF 30N03L SPP30N03L P-TO220-3-1 Q67040-S4737-A2 SPB30N03L P-TO263-3-2 Q67040-S4143-A3 30N03L 30N03 SPB30N03L SPP30N03L

    70N10L

    Abstract: SPB70N10L SPP70N10L 160-240V SPP70
    Text: Preliminary Data SPP 70N10L SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS • Drain-Source on-state resistance RDS on 0.016 Ω Continuous drain current ID Enhancement mode • Avalanche rated 100 V 70 A • Logic Level


    Original     		PDF 70N10L SPP70N10L P-TO220-3-1 Q67040-S4175 SPB70N10L P-TO263-3-2 Q67040-S4170 70N10L SPB70N10L SPP70N10L 160-240V SPP70

    80N03L

    Abstract: SPP80N03L Q67040-S4735-A3 80n03 SPB80N03L
    Text: SPP 80N03L SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS • Drain-Source on-state resistance RDS on 0.006 Ω Continuous drain current ID Enhancement mode • Avalanche rated 30 V 80 A • Logic Level • dv/dt rated


    Original     		PDF 80N03L SPP80N03L P-TO220-3-1 Q67040-S4735-A2 SPB80N03L P-TO263-3-2 Q67040-S4735-A3 80N03L SPP80N03L 80n03 SPB80N03L

    28N03

    Abstract: s4140
    Text: SPD 28N03 SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS • Drain-Source on-state resistance RDS on 0.023 Ω Continuous drain current ID Enhancement mode • Avalanche rated 30 V 28 A • dv/dt rated • 175˚C operating temperature


    Original     		PDF 28N03 SPD28N03 P-TO252 Q67040-S4138 SPU28N03 P-TO251-3-1 Q67040-S4140-A2 28N03 s4140

    mu3020

    Abstract: smd transistor k2 k1145
    Text: Philips Semiconductors Product specification Logic level TOPFET SMD version of BUK104-50L/S DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 5 pin surface mounting plastic envelope, intended as a general purpose switch for


    OCR Scan     		PDF BUK104-50L/S BUK114-50L/S BUK114-50L BUK114-50S 14-50US Ipt/lps25 mu3020 smd transistor k2 k1145

    1ps25

    Abstract: BUK114-50L BUK114-50S transistor kA2 smd smd transistor ka2
    Text: Product specification Philips Semiconductors Logic level TOPFET SMD version of BUK104-50L/S DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 5 pin surface mounting plastic envelope, intended as a general purpose switch for


    OCR Scan     		PDF BUK104-50L/S BUK114-50L/S OT426 1ps25 BUK114-50L BUK114-50S transistor kA2 smd smd transistor ka2

    SPB80N03L

    Abstract: spp60n
    Text: SIEMENS SPP80N03L SPB80N03L Preliminary data SIPMOS Power Transistor • N-Channel • Enhancement mode • Avalanche rated • Logic Level • dv/df rated • 175°C operating temperature Type SPP80N03L Vbs 30 V h 80 A SPB80N03L f l DS on @ VGS 0.008 Q


    OCR Scan     		PDF SPP80N03L SPB80N03L SPB80N03L P-T0220-3-1 P-T0263-3-2 Q67040-S4735-A2 Q67040-S4735-A3 spp60n

    Untitled

    Abstract: No abstract text available
    Text: SPD28N03 SPU28N03 SIEMENS SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche rated • övlöt rated • 175°C operating temperature Type ^DS SPD28N03 30 V b 28 A Pin 1 Pin 2 Pin 3 G D S Package f f DS on (à) VGS 0.023 Q, ^GS = 10 V P-T0252


    OCR Scan     		PDF SPD28N03 SPU28N03 Q67040-S4138-A2 P-T0252 P-T0251 Q67040-S4140-A2

    Siemens DIODE E 1220

    Abstract: VPT09050
    Text: SPD28N03L SPU28N03L SIEMENS SIPMOS Power Transistor • N-Channel /X • Enhancement mode • Avalanche rated VPT09050 VPT09051 • Logic Level • dvld t rated • 175°C operating temperature Type ^DS b SPD28N03L 30 V 28 A SPU28N03L ffDS on (5) VGS


    OCR Scan     		PDF SPD28N03L SPU28N03L VPT09050 VPT09051 P-T0252 Q67040-S4139-A2 P-T0251 Q67040-S4142-A2 Siemens DIODE E 1220

    Siemens DIODE E 1220

    Abstract: No abstract text available
    Text: SIEMENS SPP30N03L SPB30N03L Preliminary data SIPMOS Power Transistor • N-Channel • Enhancement mode • Avalanche rated • Logic Level • dv/dt rated • 175°C operating temperature Type SPP30N03L Vds 30 V b 30 A SPB30N03L ffDS on @ VGS 0.028 O V/gs = 4.5V


    OCR Scan     		PDF SPP30N03L SPB30N03L SPB30N03L P-T0220-3-1 P-T0263-3-2 Q67040-S4143-A2 Q67040-S4737-A3 Siemens DIODE E 1220