TRANSISTOR SOT103 Search Results

TRANSISTOR SOT103 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR SOT103 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
D 1398 Transistor Abstract: BFG32 BFG96 DD311 Text: Phillp^em iconductore _ bbS3131 ÜD3114b 712 Product specification M A P X Ê PNP 5 GHz wideband transistor BFG32 PINNING DESCRIPTION PNP transistor in a four-lead dual-emitter plastic SOT103 envelope. It is designed for application in wideband amplifiers, such as MATV	OCR Scan	G03114b BFG32 OT103 BFG96. OT103. D 1398 Transistor BFG32 BFG96 DD311	PDF
transistor 1264-1 Abstract: PHm 0440 transistor npn d 2058 BFG90A BFG90 phm 0048 phm 0031 ami 981 FP 801 UCD074 Text: Philips S em iconductors Product specification NPN 5 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION ' SbE D • / g BFG90A 711Dfi2b □□45111 735 ■ PHIN PINNING NPN transistor in a 4-lead dual-emitter plastic SOT103 envelope. It is designed for application in	OCR Scan	OT103 BFG90A 711002b OT103. transistor 1264-1 PHm 0440 transistor npn d 2058 BFG90A BFG90 phm 0048 phm 0031 ami 981 FP 801 UCD074	PDF
BFG34 Abstract: ON4497 TRANSISTOR 185 846 TRANSISTOR 726 Text: Philips Semiconductors Product specification -P .3 NPN 4 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION 3 - 0 S S ShE BFG34 TllDflEfci DDMSGSb T15 • PHIN PINNING NPN transistor in a four-lead dual-emitter plastic SOT103 envelope. It is designed for wideband	OCR Scan	BFG34 OT103 ON4497) OT103. BFG34 ON4497 TRANSISTOR 185 846 TRANSISTOR 726	PDF
BFG65 Abstract: TAG 9223 TAG 8653 702 P TRANSISTOR 4221 transistor transistor tag 306 558 npn 809 npn BFU65 transistor 3702 Text: Product specification Philips Semiconductors BFG65 NPN 8 GHz wideband transistor SbE D PHILIPS INTERNATIONAL DESCRIPTION 7110ÛSb 0045DÔ2 D04 « P H I N PINNING NPN transistor in a four-lead dual em itter plastic envelope SOT103 . It is designed fo r wideband	OCR Scan	BFG65 OT103) 7110fiSb 0045DÃ OT103. BFG65 TAG 9223 TAG 8653 702 P TRANSISTOR 4221 transistor transistor tag 306 558 npn 809 npn BFU65 transistor 3702	PDF
2322-712 Abstract: BFG134 LC 3524 philips resistor 2322 763 2222 372 TAG 453 665 800 2222 379 2322 712 fr 253/30 r h a 431 transistor Text: Product specification Philips Semiconductors T ^ 3 3 -a s NPN 7 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION BFG134 VllOBSb □04S20l4 4ôb M P H I N 5bE D PINNING NPN planar epitaxial transistor in a 4-lead double-emitter plastic SOT103 envelope, intended for	OCR Scan	OT103 33-OS BFG134 Q04S2014 OT103. 2322-712 BFG134 LC 3524 philips resistor 2322 763 2222 372 TAG 453 665 800 2222 379 2322 712 fr 253/30 r h a 431 transistor	PDF
BFG90A Abstract: No abstract text available Text: Philips Semiconductors bbS 3^31 0031222 13 T Product specification « A P X £ NPN 5 GHz wideband transistor BFG90A N AMER PHILIPS/DISCRETE DESCRIPTION b'lE D PINNING NPN transistor in a 4-lead dual-emitter plastic SOT103 envelope. PIN It is designed for application in	OCR Scan	BFG90A OT103 OT103. BFG90A	PDF
BFG134 Abstract: BJE 247 Text: b t . 5 3 ^3 1 Philips Semiconductors D D 3131S 36 □ M A P X Product specification NPN 7 GHz wideband transistor ^ BFG134 N AUER PHILIPS/DISCRETE b^E D PINNING DESCRIPTION NPN planar epitaxial transistor in a 4-lead double-emitter plastic SOT103 envelope, intended for	OCR Scan	3131S BFG134 OT103 OT103. BFG134 BJE 247	PDF
BFG96 Abstract: BFG32 MSB037 3H2 philips MBB352 Text: Product specification Philips Semiconductors 7 ^ 3 / - Z 3 PNP 5 GHz wideband transistor philips SbE D international BFG32 711Dfi2b D04SD3S ETfl • P H I N PINNING D ESCRIPTION 1 P N P transistor in a four-lead dual-emitter plastic SOT103 envelope. It is designed for application in	OCR Scan	BFG32 OT103 BFG96. D04SD3S MSB037 OT103. BFG96 BFG32 3H2 philips MBB352	PDF
transistor 3702 Abstract: BFG65 tag 8653 transistor SOT103 TAG 9223 transistor 2566 transistor tag 306 D 799 UBB332 SOT103 Text: Product specification Philips Semiconductors NPN 8 GHz wideband transistor P H IL IP S INTERNATIONAL DESCRIPTION ^ ^ E » - «10»Eh 0 0 W 0 .2 BFG65 ODM M P H I N PINNING NPN transistor in a four-lead dual emitter plastic envelope SOT103 . It is designed for wideband	OCR Scan	BFG65 OT103) 711005b OT103. transistor 3702 tag 8653 transistor SOT103 TAG 9223 transistor 2566 transistor tag 306 D 799 UBB332 SOT103	PDF
BFG65 transistor Abstract: No abstract text available Text: Philips Semiconductors H 3 T 31 0 G 3 1 1 ^ 3 bbS SOT H A P X _ Product specification NPN 8 GHz wideband transistor ^ BFG65 N AI1ER PHILIPS/DISCRETE DESCRIPTION b'iE J> PINNING NPN transistor in a four-lead dual emitter plastic envelope SOT103 . It is designed for wideband	OCR Scan	BFG65 OT103) BFG65 transistor	PDF
BFG32 Abstract: No abstract text available Text: P h ilip s Sem iconductors b b SB ^ B l O O B im b 7^5 • Product specification APX £ PNP 5 GHz wideband transistor BFG32 N AMER PHILIPS/DISCRETE DESCRIPTION b^E D PINNING PNP transistor in a four-lead dual-emitter plastic SOT103 envelope. It is designed for application in	OCR Scan	BFG32 OT103 BFG96. BFG32	PDF
BFG134 Abstract: bt 1690 transistor transistor bt 1630 resistor 2322 194 philips bt 1690 philips 2222 372 DD313 752 J 1600 V CAPACITOR LC 3524 2222 379 Text: P hilip ^em icon d u cto r^^ ^ b t iS B 'ìB l 0031315 16D • A P X ^^P ro du c^p eo lficatio n NPN 7 GHz wideband transistor BFG134 N AHER PHILIPS/DISCRETE b^E D PINNING DESCRIPTION NPN planar epitaxial transistor in a 4-tead double-emitter plastic SOT103 envelope, intended for	OCR Scan	BFG134 BFG134 bt 1690 transistor transistor bt 1630 resistor 2322 194 philips bt 1690 philips 2222 372 DD313 752 J 1600 V CAPACITOR LC 3524 2222 379	PDF
BFG65 Abstract: transistor 3702 558 npn MSB037 4221 transistor D 1414 transistor MBB332 Text: Philips Semiconductors b b S B 'ÌB l G0 3 i n 3 SCH • AP X Product specification NPN 8 GHz wideband transistor — — — — BFG65 N APIER P H IL IP S /D IS C R E T E b'JE ]> DESCRIPTION NPN transistor in a four-lead dual emitter plastic envelope SOT103 .	OCR Scan	BFG65 OT103) MSB037 OT103. BFG65 transistor 3702 558 npn MSB037 4221 transistor D 1414 transistor MBB332	PDF
TRANSISTOR zo 109 ma Abstract: transistor zo 109 transistor 86 IC 7585 midium power uhf transistor B15V140 microwave transistor ZO 109 transistor Text: BIPOLARICS, INC. Part Number B15V140 MEDIUM POWER SILICON MICROWAVE TRANSISTOR PRODUCT DATA SHEET DESCRIPTION AND APPLICATIONS: FEATURES: • Bipolarics' B15V140 is a high performance silicon bipolar transistor intended for medium power linear and Class C	Original	B15V140 B15V140 OT-223 OT-103 TRANSISTOR zo 109 ma transistor zo 109 transistor 86 IC 7585 midium power uhf transistor microwave transistor ZO 109 transistor	PDF

transistor bf 422 NPN Abstract: BFR521 MSB037 NPN transistor mhz s-parameter transistor SOT103 SOT-103 Text: Product specification Philips Semiconductors NPN 9 GHz wideband transistor BFR521 FEATURES DESCRIPTION • High power gain Silicon NPN planar epitaxial transistor in a plastic, 4-lead dual emitter SOT1Q3 package. • Low noise figure • High transition frequency	OCR Scan	BFR521 OT103 MSB037 OT103. 7110A2b transistor bf 422 NPN BFR521 MSB037 NPN transistor mhz s-parameter transistor SOT103 SOT-103	PDF
5609 t transistor Abstract: 5609 transistor transistor 5609 BFG195 5609 npn transistor 5609 npn 702 P TRANSISTOR 702 Z TRANSISTOR UBB267 Tomb-25 Text: Philips Semiconductors Product specification NPN 7 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION ^ SbE T> m 7110fl2b BFG195 0D4SE2fl TIT • PINNING NPN transistor in a 4-lead dual-emitter plastic SOT1Q3 envelope. PIN It is designed for wideband	OCR Scan	BFG195 7110fl2b OT103. 5609 t transistor 5609 transistor transistor 5609 BFG195 5609 npn transistor 5609 npn 702 P TRANSISTOR 702 Z TRANSISTOR UBB267 Tomb-25	PDF
rf transistor mar 8 Abstract: npn C 1740 Micro Choke 2222-032 SOT103 "RF Power Transistor" Transistor 1740 BD228 BLT11 2322 157 philips Text: Philips Semiconductors Product specification NPN 2 GHz RF power transistor BLT11 FEATURES DESCRIPTION • High power gain NPN silicon planar epitaxial transistor encapsulated in a 4-pin dual-emitter SOT1Q3 plastic package. • High efficiency • Small size discrete power amplifier	OCR Scan	BLT11 OT103. 711DflEL rf transistor mar 8 npn C 1740 Micro Choke 2222-032 SOT103 "RF Power Transistor" Transistor 1740 BD228 BLT11 2322 157 philips	PDF
bc337 TRANSISTOR equivalent Abstract: TRANSISTOR C875, PIN TRANSISTOR C875 BC337 SOT-103 rf transistor mar 8 C875 transistor BC337 SPICE MJE 340 transistor transistor SOT103 Text: Philips Semiconductors Product specification NPN 2 GHz RF power transistor BLT10 FEATURES DESCRIPTION • High power gain NPN silicon planar epitaxial transistor encapsulated in a 4-pin, dual-emitter SOT 103 plastic package. • High efficiency • Small size discrete power amplifier	OCR Scan	BLT10 OT103 MSB037 OT103. 711002b bc337 TRANSISTOR equivalent TRANSISTOR C875, PIN TRANSISTOR C875 BC337 SOT-103 rf transistor mar 8 C875 transistor BC337 SPICE MJE 340 transistor transistor SOT103	PDF
Untitled Abstract: No abstract text available Text: Philips Semiconductors Preliminary specification bbSB'lBl DOBSlbD TST H A P X 2 GHz RF pow er transistor BLT10 N AMER PHILIPS/DISCRETE b'lE D DESCRIPTION NPN silicon planar epitaxial transistor primarily designed for common emitter class-AB operation in handheld radio equipment at	OCR Scan	BLT10 OT103 BLT10	PDF
C 3311 transistor Abstract: BRF4801 c 3198 transistor 136.21 IC 7585 midium power uhf transistor BRF480 BRF4801J Silicon Bipolar Transistor 35 MICRO-X BRF48023 Text: BIPOLARICS, INC. Part Number BRF480 MEDIUM POWER SILICON MICROWAVE TRANSISTOR PRODUCT DATA SHEET DESCRIPTION AND APPLICATIONS: FEATURES: • Bipolarics' BRF480 is a high performance silicon bipolar transistor intended for medium power linear and Class C applications at VHF, UHF and microwave frequencies in 7.2	Original	BRF480 BRF480 OT-223 OT-103 BRF48086 BRF48084 BRF48085 BRF48004 C 3311 transistor BRF4801 c 3198 transistor 136.21 IC 7585 midium power uhf transistor BRF4801J Silicon Bipolar Transistor 35 MICRO-X BRF48023	PDF
BLU98 Abstract: No abstract text available Text: N AUER PHILIPS/DISCRETE bTE T> m bbS3S3i ooeaaaB BLU98 J U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor designed for use in mobile radio transmitters in the 900 MHz band. Features: • emitter-ballasting resistors fo r an optimum temperature profile	OCR Scan	BLU98 OT-103) OT-103. bb53T31 BLU98	PDF
TRANSISTOR P3 Abstract: 4 pin dual-emitter bs 88 max zs values FP 801 BFG91A UBB330 0507 transistor 45194 transistor C 2290 transistor 4393 Text: Product specification Philips Semiconductors T NPN 6 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION SbE D • 7 - , ^ BFG91A 711DS2b 0DHS1S2 S1G « P H I N PINNING NPN transistor in a 4-lead dual-emitter plastic SOT 103 envelope. PIN It is designed for application in	OCR Scan	BFG91A 7110fi2b OT103. TRANSISTOR P3 4 pin dual-emitter bs 88 max zs values FP 801 BFG91A UBB330 0507 transistor 45194 transistor C 2290 transistor 4393	PDF
BFG34 Abstract: 8723 transistor ON4497 UBS357 M883S Text: P hilips Sem iconductors bb53^31 DD311b7 Ml? NPN 4 GHz wideband transistor ^ BFG34 N AflER PH ILIPS/DISCRETE DESCRIPTION b'iE » PINNING NPN transistor in a four-lead dual-emitter plastic S O U 03 envelope. It is designed for wideband application in CATV and MATV	OCR Scan	BFG34 OT103 ON4497) BFG34 8723 transistor ON4497 UBS357 M883S	PDF
BFG96 Abstract: No abstract text available Text: P hilips Sem iconductor; bbS3T31 0031ST2 553 M A P X Product specification BFG96 NPN 5 GHz wideband transistor bit N AUER PHILIPS/5ISCRETE DESCRIPTION » PINNING NPN transistor in a 4-lead dual-emitter plastic SOU 03 envelope. DESCRIPTION PIN It is designed for application in	OCR Scan	bbS3T31 0031ST2 BFG96 BFG32. OT103. BFG96	PDF

TRANSISTOR SOT103 Search Results

TRANSISTOR SOT103 Result Highlights (5)

TRANSISTOR SOT103 Datasheets Context Search

D 1398 Transistor

transistor 1264-1

BFG34

BFG65

2322-712

BFG90A

BFG134

BFG96

transistor 3702

BFG65 transistor

BFG32

BFG134

BFG65

TRANSISTOR zo 109 ma

transistor bf 422 NPN

5609 t transistor

rf transistor mar 8

bc337 TRANSISTOR equivalent

Untitled

C 3311 transistor

BLU98

TRANSISTOR P3

BFG34

BFG96