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    TRANSISTOR TOP-3 OUTLINE DIMENSIONS Search Results

    TRANSISTOR TOP-3 OUTLINE DIMENSIONS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    SSM3K361R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 100 V, 3.5 A, 0.069 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM3K341R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 60 V, 6.0 A, 0.036 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    XPH13016MC Toshiba Electronic Devices & Storage Corporation P-ch MOSFET, -60 V, -60 A, 0.0099 Ω@-10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR TOP-3 OUTLINE DIMENSIONS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    8313 transistor to-3

    Abstract: board ccb2 kf 982 855E transistor Bf 981
    Text: SILICON TRANSISTOR UPA895TD NPN SILICON RF TWIN TRANSISTOR FEATURES LOW VOLTAGE, LOW CURRENT OPERATION Units in mm Package Outline TD (TOP VIEW) SMALL PACKAGE OUTLINE: 1.2 mm x 0.8 mm 1.0±0.05 IDEAL FOR 1-3 GHz OSCILLATORS 1 2 0.4 0.8 3 The UPA895TD contains two NE851 high frequency silicon


    Original     		PDF UPA895TD NE851 UPA895TD NE851 AN1026. 8313 transistor to-3 board ccb2 kf 982 855E transistor Bf 981

    Untitled

    Abstract: No abstract text available
    Text: Plastic Packages for Integrated Circuits Package Outline Drawing P3.064 3 LEAD SMALL OUTLINE TRANSISTOR PLASTIC PACKAGE SOT23-3 Rev 3, 3/12 2.92±0.12 4 DETAIL "A" C L 0.085 - 0.19 2.37±0.27 1.30±0.10 4 C L 0.950 0.435±0.065 0 - 8 deg. 0.20 M C TOP VIEW


    Original     		PDF OT23-3) AMSEY14 5m-1994. O-236.

    transistors ON 4673

    Abstract: NE685 NE68530 NE856 NE85630 S21E UPA832TF UPA835TF UPA835TF-T1 pin IC 7479
    Text: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES • OUTLINE DIMENSIONS Units in mm LOW NOISE: Q1:NF = 1.5 dB TYP at f = 2 GHz, VCE = 3 V, lc = 3 mA Package Outline TS06 (Top View) 2.1 ± 0.1 Q2:NF = 1.2 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA


    Original     		PDF UPA835TF NE685, NE856) UPA835TF UPA835TF-T1 NE68530 NE85630 UPA832TF 24-Hour transistors ON 4673 NE685 NE68530 NE856 NE85630 S21E UPA835TF-T1 pin IC 7479

    7483 IC

    Abstract: NE685 NE68530 NE856 NE85630 S21E UPA832TF UPA832TF-T1 UPA835TF IC 566 vco
    Text: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES • OUTLINE DIMENSIONS Units in mm LOW NOISE: Q1:NF = 1.2 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA Package Outline TS06 (Top View) 2.1 ± 0.1 1.25 ± 0.1 Q2:NF = 1.5 dB TYP at f = 2 GHz, VCE = 3 V, lc = 3 mA


    Original     		PDF UPA832TF NE856, NE685) UPA832TF NE85630 NE68530 UPA835TF UPA832TF-T1 24-Hour 7483 IC NE685 NE68530 NE856 NE85630 S21E UPA832TF-T1 IC 566 vco

    pt 6964

    Abstract: UPA833TF MJE 13031 NE685 NE68530 NE688 NE68830 S21E UPA833TF-T1 UPA836TF
    Text: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES • OUTLINE DIMENSIONS Units in mm Package Outline TS06 (Top View) LOW NOISE: Q1:NF = 1.7 dB TYP at f = 2 GHz, VCE = 1 V, lc = 3 mA 2.1 ± 0.1 1.25 ± 0.1 Q2:NF = 1.5 dB TYP at f = 2 GHz, VCE = 3 V, lc = 3 mA


    Original     		PDF UPA833TF NE688, NE685) UPA833TF UPA833TF-T1 NE68830 NE68530 UPA836TF 24-Hour pt 6964 MJE 13031 NE685 NE68530 NE688 NE68830 S21E UPA833TF-T1

    land pattern for sot23-3

    Abstract: No abstract text available
    Text: Plastic Packages for Integrated Circuits Package Outline Drawing P3.064 3 LEAD SMALL OUTLINE TRANSISTOR PLASTIC PACKAGE SOT23-3 Rev 2, 9/09 2.92±0.12 4 DETAIL "A" C L 0.13±0.05 2.37±0.27 1.30±0.10 4 C L 0.950 0.435±0.065 0 - 8 deg. 0.20 M C TOP VIEW


    Original     		PDF OT23-3) AMSEY14 5m-1994. O-236. land pattern for sot23-3

    ic 7809

    Abstract: OF IC 7809 UPA828TF-T1 NE687 S21E UPA828TF 3699 npn electrical characteristics IC 7809
    Text: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES OUTLINE DIMENSIONS Unit in mm • LOW NOISE: NF = 1.3 dB TYP at f = 2 GHz, VCE = 2 V, lc = 3 mA • HIGH GAIN: |S21E|2 • UPA828TF Package Outline TS06 (Top View) 2.1 ± 0.1 1.25 ± 0.1


    Original     		PDF UPA828TF UPA828TF UPA828TF-T1 24-Hour ic 7809 OF IC 7809 UPA828TF-T1 NE687 S21E 3699 npn electrical characteristics IC 7809

    MO-178-AA

    Abstract: No abstract text available
    Text: Plastic Packages for Integrated Circuits Package Outline Drawing P5.064 5 LEAD SMALL OUTLINE TRANSISTOR PLASTIC PACKAGE Rev 3, 4/11 8° 0° 3.00 3 2.80 1.90 5 0.22 0.08 5 4 3.00 2.60 1.70 1.50 3 2 (0.95) SEE DETAIL X 0.50 0.30 0.20 (0.008) M C TOP VIEW END VIEW


    Original     		PDF 5M-1994. SC-74 MO178AA. MO-178-AA

    Transistor MJE 5332

    Abstract: Transistor 5332 lex m01 001 transistor kf 469 NE696M01 NE696M01-T1 S21E f 9368 IC 4047 BE transistor ne696m01
    Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES NE696M01 OUTLINE DIMENSIONS Units in mm • HIGH fT: 14 GHz TYP at 3 V, 10 mA PACKAGE OUTLINE M01 • LOW NOISE FIGURE: NF = 1.6 dB TYP at 2 GHz TOP VIEW 2.1 ± 0.1 1.25 ± 0.1 HIGH GAIN:


    Original     		PDF NE696M01 NE696M01 15e-9 58e-9 4e-12 18e-12 696M01 24-Hour Transistor MJE 5332 Transistor 5332 lex m01 001 transistor kf 469 NE696M01-T1 S21E f 9368 IC 4047 BE transistor ne696m01

    IC 4047

    Abstract: bf 695 NE685 NE696M01 NE696M01-T1 S21E IB 6420 opt 300 lex m01 001
    Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES NE696M01 OUTLINE DIMENSIONS Units in mm • HIGH fT: 14 GHz TYP at 3 V, 10 mA PACKAGE OUTLINE M01 • LOW NOISE FIGURE: NF = 1.6 dB TYP at 2 GHz TOP VIEW HIGH GAIN: |S21E|2 = 14 dB TYP at 2 GHz


    Original     		PDF NE696M01 NE696M01 NE685) OT363 15e-9 58e-9 4e-12 18e-12 696M01 IC 4047 bf 695 NE685 NE696M01-T1 S21E IB 6420 opt 300 lex m01 001

    NE685

    Abstract: NE696M01 NE696M01-T1 S21E lex m01 001
    Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES NE696M01 OUTLINE DIMENSIONS Units in mm • HIGH fT: 14 GHz TYP at 3 V, 10 mA PACKAGE OUTLINE M01 • LOW NOISE FIGURE: NF = 1.6 dB TYP at 2 GHz TOP VIEW HIGH GAIN: |S21E|2 = 14 dB TYP at 2 GHz


    Original     		PDF NE696M01 NE696M01 NE685) OT363 15e-9 58e-9 4e-12 18e-12 696M01 NE685 NE696M01-T1 S21E lex m01 001

    nec K 3570

    Abstract: bf 695 bjt 522 NE685 NE696M01 NE696M01-T1 S21E OF BJT 547 ikr 251 lex m01 001
    Text: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES NE696M01 OUTLINE DIMENSIONS Units in mm • HIGH fT: 14 GHz TYP at 3 V, 10 mA PACKAGE OUTLINE M01 • LOW NOISE FIGURE: NF = 1.6 dB TYP at 2 GHz TOP VIEW HIGH GAIN: |S21E|2 = 14 dB TYP at 2 GHz • 6 PIN SMALL MINI MOLD PACKAGE


    Original     		PDF NE696M01 NE696M01 NE685) OT363 4e-12 18e-12 696M01 nec K 3570 bf 695 bjt 522 NE685 NE696M01-T1 S21E OF BJT 547 ikr 251 lex m01 001

    IC 7107

    Abstract: IB 6410 NE685 NE696M01 NE696M01-T1 NE696M01-T1-A S21E lex m01 001
    Text: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES NE696M01 OUTLINE DIMENSIONS Units in mm • HIGH fT: 14 GHz TYP at 3 V, 10 mA PACKAGE OUTLINE M01 • LOW NOISE FIGURE: NF = 1.6 dB TYP at 2 GHz TOP VIEW HIGH GAIN: |S21E|2 = 14 dB TYP at 2 GHz • 6 PIN SMALL MINI MOLD PACKAGE


    Original     		PDF NE696M01 NE696M01 NE685) OT363 IC 7107 IB 6410 NE685 NE696M01-T1 NE696M01-T1-A S21E lex m01 001

    NE856

    Abstract: S21E UPA801TF
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA801TF OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE OUTLINE: SOT-363 package measures just 2.0 mm x 1.25 mm • LOW HEIGHT PROFILE: Just 0.60 mm high • HIGH COLLECTOR CURRENT: IC MAX = 100 mA PACKAGE OUTLINE TS06


    Original     		PDF UPA801TF OT-363 UPA801TF NE856 UPA801TF-T1, 24-Hour S21E

    NE688

    Abstract: S21E UPA814TF
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA814TF OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE OUTLINE: SOT-363 package measures just 2.0 mm x 1.25 mm • LOW HEIGHT PROFILE: Just 0.60 mm high • HIGH COLLECTOR CURRENT: IC MAX = 100 mA PACKAGE OUTLINE TS06


    Original     		PDF UPA814TF OT-363 UPA814TF NE688 UPA814TF-T1, 24-Hour S21E

    NE856

    Abstract: S21E UPA810T UPA810TF chip die npn transistor
    Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA810TF OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE OUTLINE: SOT-363 package measures just 2 mm x 1.25 mm • LOW HEIGHT PROFILE: Just 0.60 mm hight • HIGH COLLECTOR CURRENT: IC MAX = 100 mA


    Original     		PDF UPA810TF OT-363 UPA810TF NE856 UPA810TF-T1, 24-Hour S21E UPA810T chip die npn transistor

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES UPA828TF OUTLINE DIMENSIONS Unit in mm LOW NOISE: NF = 1.3 dB TYP at f = 2 GHz, V ce = 2 V, Ic = 3 mA Package Outline TS 06 (Top View) -* HIGH GAIN: 2.1 ±0.1 i ► r» — 1.25± 0


    OCR Scan     		PDF NE687 UPA828TF UPA828TF mirror59 UPA828TF-T1

    cd 1191 cb

    Abstract: lex m01 001
    Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES NE696M01 OUTLINE DIMENSIONS HIGH fT : Units in mm PACKAGE OUTLINE M01 14 G Hz T Y P at 3 V, 10 mA LOW NOISE FIGURE: TOP VIEW IMF = 1 .6 dB TYP at 2 GHz — HIGH GAIN: 2.1 ± 0.1 - -1.25 ± 0 .1 -*


    OCR Scan     		PDF NE696M01 NE696M01 NE685) OT363 7e-16 1e-13 4e-12 18e-12 696M01 cd 1191 cb lex m01 001

    ic CD 4047

    Abstract: lex m01 001 ha 431 transistor
    Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR NE696M01 OUTLINE DIMENSIONS Units in mm FEATURES PACKAGE OUTLINE M01 HIG H fT: 14 GHz TYP at 3 V, 10 mA TOP VIEW LOW N O IS E F IG U R E : NF = 1.6 dB TYP at 2 GHz - HIG H G A IN : •— 1.25 + 0.1-»


    OCR Scan     		PDF NE696M01 NE696M01 NE685) OT363 05e-12 15e-12 22e-9 5e-12 13e-12 15e-9 ic CD 4047 lex m01 001 ha 431 transistor

    CD 5888 CB

    Abstract: cd 4847 CD 5888 ic IC CD 3207 transistor d 13009 CD 8227 UPA831TF ha 12185 nt ap 6928 cd 5888
    Text: PRELIMINARY DATA SHEET UPA831TF NPN SILICON EPITAXIAL TWIN TRANSISTOR OUTLINE DIMENSIONS FEATURES LOW NOISE: Units in mm Package Outline TS06 (Top View) Q1 :NF = 1.2 dB T Y P at f = 1 G Hz, V c e = 3 V, Ic = 7 mA Q 2:N F = 1.4 dB T Y P at f = 1 G Hz, V c e = 3 V, Ic = 7 mA


    OCR Scan     		PDF UPA831TF NE856, NE681) NE85630 NE68130 UPA831TF-T1 24-Hour CD 5888 CB cd 4847 CD 5888 ic IC CD 3207 transistor d 13009 CD 8227 UPA831TF ha 12185 nt ap 6928 cd 5888

    transistor d 13009

    Abstract: 9622 transistor t 3866 power transistor
    Text: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR UPA832TF OUTLINE DIMENSIONS Units in mm FEATURES LOW NOISE: Package O utline TS06 (Top View) Q1 :NF = 1.2 dB TYP at f = 1 GHz, V ce = 3 V, Ic = 7 mA Q2:NF = 1.5 dB TYP at f = 2 GHz, V ce = 3 V, Ic = 3 mA


    OCR Scan     		PDF UPA832TF NE856, NE685) UPA832TF NE85630 NE68530 UPA835TF UPA832TF-T1 24-Hour transistor d 13009 9622 transistor t 3866 power transistor

    MJE 13031

    Abstract: 054S1 cd 4637
    Text: PRELIMINARY DATA SHEET UPA836TF NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES_ • OUTLINE DIMENSIONS Units in mm LOW NOISE: Package O utline TS06 (Top View) Q1 :NF = 1.5 dB TYP at f = 2 GHz, V ce = 3 V, Ic = 3 mA Q2:NF = 1.7 dB TYP at f = 2 GHz, V ce = 1 V, Ic = 3 mA


    OCR Scan     		PDF UPA836TF NE685, NE688) UPA836TF UPA836TF-T1 UPA833TF MJE 13031 054S1 cd 4637

    UPA833TF

    Abstract: Um 3562
    Text: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR UPA833TF OUTLINE DIMENSIONS Units in mm FEATURES Package O utline TS06 (Top View) LOW NOISE: Q1 :NF = 1.7 dB T Y P at f = 2 G Hz, V c e = 1 V, Ic = 3 mA Q 2:N F = 1.5 dB T Y P at f = 2 G Hz, V c e = 3 V, Ic = 3 mA


    OCR Scan     		PDF UPA833TF NE688, NE685) NE68830 NE68530 UPA833TF-T1 24-Hour UPA833TF Um 3562

    ha 13483

    Abstract: j 6815 transistor transistor 9647 LS 7405 NEC IC 5020 098
    Text: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES UPA828TF OUTLINE DIMENSIONS Unit in mm LOW NOISE: Package O utline TS06 (Top View) NF = 1.3 dB TYP at f = 2 GHz, Vce = 2 V, Ic = 3 m A HIGH GAIN: |S 21 e |2 = 8.5 dB TYP at f = 2 GHz, V c e = 2 V, Ic = 20 m A


    OCR Scan     		PDF UPA828TF NE687 UPA828TF UPA828TF-T1 24-Hour ha 13483 j 6815 transistor transistor 9647 LS 7405 NEC IC 5020 098