RN4988FS
Abstract: No abstract text available
Text: RN4988FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN4988FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Equivalent Circuit and Bias Resistor Values
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RN4988FS
RN4988FS
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Untitled
Abstract: No abstract text available
Text: RN4988FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN4988FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 0.1±0.05 Equivalent Circuit and Bias Resistor Values
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RN4988FS
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Untitled
Abstract: No abstract text available
Text: RN4988FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN4988FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 0.8±0.05 0.1±0.05 Equivalent Circuit and Bias Resistor Values
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RN4988FS
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RN4988FS
Abstract: No abstract text available
Text: RN4988FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN4988FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 0.8±0.05 0.1±0.05 Q2 C C R1 fS6 R1 R2
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RN4988FS
RN4988FS
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PBHV8115T
Abstract: PBHV9115T MARKING CODE SMD IC TRANSISTOR SMD 2X sot23 smd transistor w7
Text: PBHV9115T 150 V, 1 A PNP high-voltage low VCEsat BISS transistor Rev. 01 — 14 February 2008 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.
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PBHV9115T
O-236AB)
PBHV8115T.
AEC-Q101
PBHV9115T
PBHV8115T
MARKING CODE SMD IC
TRANSISTOR SMD 2X sot23
smd transistor w7
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SMD TRANSISTOR MARKING w7
Abstract: PBHV8115T PBHV9115T MARKING CODE SMD IC
Text: PBHV9115T 150 V, 1 A PNP high-voltage low VCEsat BISS transistor Rev. 02 — 9 January 2009 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.
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PBHV9115T
O-236AB)
PBHV8115T.
AEC-Q101
PBHV9115T
SMD TRANSISTOR MARKING w7
PBHV8115T
MARKING CODE SMD IC
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SMD TRANSISTOR MARKING w7
Abstract: No abstract text available
Text: PBHV9115T 150 V, 1 A PNP high-voltage low VCEsat BISS transistor Rev. 02 — 9 January 2009 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.
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PBHV9115T
O-236AB)
PBHV8115T.
AEC-Q101
PBHV9115T
771-PBHV9115T215
SMD TRANSISTOR MARKING w7
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PDF
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W7NA90
Abstract: STW7NA90 welding circuit diagram W7NA
Text: STW7NA90 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE ST W7NA90 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 900 V < 1.3 Ω 7A TYPICAL RDS(on) = 1.05 Ω ± 30V GATE TO SOURCE VOLTAGE RANTING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC
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STW7NA90
W7NA90
100oC
O-247
W7NA90
STW7NA90
welding circuit diagram
W7NA
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RIL3N
Abstract: transistor 1107 transistor tt 2222 W045 TT 2222 BLY91C j0718 RF POWER TRANSISTOR NPN vhf transistor L6
Text: b SE 711002b D DDb3bll Sbl • PHIN BLY91C PHILIPS INTERNATIONAL V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaran
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711002b
00b3bll
BLY91C
OT-120.
RIL3N
transistor 1107
transistor tt 2222
W045
TT 2222
BLY91C
j0718
RF POWER TRANSISTOR NPN vhf
transistor L6
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE ^1=53^31 DD3T433 E7D BLW83 fc.RE D IAPX l H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in transmitting am plifiers operating in the h.f. and v.h.f. bands, w ith a nominal supply voltage o f 28 V . The transistor is specified fo r s.s.b. applications as linear
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DD3T433
BLW83
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PDF
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transistor L6
Abstract: BLY92C BLY92 PL 431 transistor
Text: N AUER PHILIPS/DISCRETE b'lE D • btSB'îBl 002*1732 T13 ■ APX JL BLY92C V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaran
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OCR Scan
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BLY92C
OT-120.
7z68949
transistor L6
BLY92C
BLY92
PL 431 transistor
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE b'lE D • bbSS1^ ! DQETBbb 77E « A P X BLW76 H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-AB or class-B operated high power transmitters in the h.f. and v.h.f. bands. The transistor presents excellent performance as a linear am
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BLW76
7Z78092
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PDF
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b'lE D b b S B ' m DDETBflD DM2 * A P X BLW77 J V . H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-AB or class-B operated high power transmitters in the h.f. and v.h.f. bands. The transistor presents excellent performance as a linear am
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BLW77
28The
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PDF
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Untitled
Abstract: No abstract text available
Text: I N AUER PHILIPS/DISCRETE bb53*131 □ 02*1732 T13 BLY92C b*!E D IAPX A V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaran
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BLY92C
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PDF
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PHN110
Abstract: MS-012AA
Text: Philips Semiconductors Product specification N-channel enhancement mode MOS transistor PHN110 FEATURES DESCRIPTION • High-speed switching N-channel enhancement mode MOS transistor in an 8-pin plastic SOT96-1 S08 package. • No secondary breakdown • Very low on-resistance.
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PHN110
OT96-1
OT96-1
076E03S
MS-012AA
1997Jun
PHN110
MS-012AA
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PDF
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Diode 10aic
Abstract: BUK455-600B philips EBL 31
Text: N AMER PHILIPS/DISCRETE bTE D • bbS3^31 OGaabbS Ebl H A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode tield-effect power transistor in a plastic envelope. The device is intended fcr use in
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BUK455-600B
-T0220AB
bbS3131
Diode 10aic
BUK455-600B
philips EBL 31
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PDF
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BUK455-600B
Abstract: BUK455 600B
Text: N AI1ER P H I LI PS /D I SC RE T E bTE D • bbS3^31 003QbbS Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode tield-effect power transistor in a plastic envelope. The device is intended fcr use in Switched Mode Power Supplies
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D030bbs
BUK455-600B
-T0220AB
BUK455 600B
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2sc2952
Abstract: No abstract text available
Text: NPN MEDIUM POWER MICROWAVE TRANSISTOR NE24600 NE24615 FEATURES DESCRIPTION • LOW IM DISTORTION CHARACTERISTICS AT HIGH OUTPUT LEVELS: NE24615 IM2 = -56 dBc, IM3 = -64 dBc NE24620 IM2= -63 dBc, IM3 = -72 dBc @ V o = 120 dB|iV/75 i l The NE246 is an NPN transistor designed for broadband
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NE24615
NE24620
iV/75
NE24600
NE24615
NE246
lS22l2,
4275c!
2sc2952
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transistor tt 2222
Abstract: D2l10 BLV33F transistor rf vhf G37 IC
Text: N AHER PHILIPS/DISCRETE bTE D • b b S B 'J a i J □ G 2 Û R ei 7 144 IAPX BLV33F V.H.F. LINEAR POWER TRANSISTOR N-P-N silicon planar epitaxial transistor prim arily intended fo r use in linear v.h.f. amplifiers fo r television transmitters and transposers.
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BLV33F
BLV33F
ABELV33FILIPS/
7z88099
transistor tt 2222
D2l10
transistor rf vhf
G37 IC
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PDF
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b^E bbSS^l D 003^3^4 b37 BLW78 H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, AB or B operated mobile, industrial and m ilitary transmitters in the h.f. and v.h.f. bands. It is resistance stabilized and is guaranteed to
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BLW78
bb53R3J
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PDF
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transistor w7
Abstract: PJ99
Text: AL L E GRO MI C ROS Y S TE MS I NC ^3 D • 0 5 D4 3 3 Ô 00D3775 S ■ ALGR T -9 1 -0 1 PROCESS PJ99 Process PJ99 P-Channel Junction Field-Effect Transistor Process PJ99 is a P-channel junction field-effect transistor designed as a complement to the NJ99
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00D3775
05D433Ô
0Q0377b
KftA-14
transistor w7
PJ99
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PDF
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Untitled
Abstract: No abstract text available
Text: N ~7 > V 7* $ /Transistors UMW7N FMW7 UMW7N/FMW7 “ i — JU K h /Dual Mini-Mold Transistor v U n > Epitaxiai Planar NPN Silicon Transistor ÜiJijJfciÄtiffl/RF Amplifier • il- f f i^ 'jiH /D im e n s io n s U n it: mm • W* 1) 3 . Km” 7 * r - vT
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200MHz
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PDF
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Untitled
Abstract: No abstract text available
Text: ^53=131 0025510 'i El H A P X BSP121 L7E » N AMER PH IL IP S/ DI SC R ET E 7 V. N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope and designed fo r use as a line current interrupter in telephone sets and fo r application in relay, high-speed and
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BSP121
OT223
0Q25514
MCB331
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PDF
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MP1620
Abstract: transistors MP1620 Mp1620 equivalent mp1620 transistor transistor mp1620 sanken power transistor mp1620 sanken power transistor IC MP1620 1F 10pin sanken lot number
Text: nnKpn M nàtfcJÜ # £ s a n k e n e l e c t r ic c o m p a n y , l t d . SPE C IFIC A TIO N S DEVICE TYPE NAME m m i M P I620 SANKEN MOLD TYPE SILICON POWER TRANSISTOR MPI 620 l. m m m m Scope C \7 {2> JSTOiilLSS S' y a M P1620 Ko 50 The present specifications shall apply to Sanken silicon power transistor type MP1620.
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MP1620
MP1620
MP1620.
SSE-21
SSE-21316
transistors MP1620
Mp1620 equivalent
mp1620 transistor
transistor mp1620
sanken power transistor mp1620
sanken power transistor
IC MP1620
1F 10pin
sanken lot number
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