TRANSISTOR WB Search Results

TRANSISTOR WB Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR WB Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
MN1280 Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor	Original		PDF
oz960 Abstract: khb9D5N20P MB4213 KIA78pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors	Original	KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb9D5N20P MB4213 KIA78pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j	PDF
2t1 transistor Abstract: marking 2t1 Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03B Plastic-Encapsulate Transistors TP9012NND03 TRANSISTOR C WBFBP-03B DESCRIPTION PNP Epitaxial Silicon Transistor 1.2x1.2×0.5 unit: mm FEATURES Complementary to TP9013NND03 Excellent hFE linearity	Original	WBFBP-03B TP9012NND03 WBFBP-03B TP9013NND03 150mW -50mA -500mA, 2t1 transistor marking 2t1	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03B Plastic-Encapsulate Transistors TP9012NND03 TRANSISTOR C WBFBP-03B DESCRIPTION PNP Epitaxial Silicon Transistor 1.2x1.2×0.5 unit: mm FEATURES Complementary to TP9013NND03 Excellent hFE linearity	Original	WBFBP-03B TP9012NND03 WBFBP-03B TP9013NND03 150mW -50mA -500mA,	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03A Plastic-Encapsulate Transistors TK2222ATTD03 C TRANSISTOR WBFBP-03A 1.6x1.6×0.5 unit: mm DESCRIPTION NPN Epitaxial planar Silicon Transistor TOP B FEATURES Complementary PNP Type available (TK2907ATTD03)	Original	WBFBP-03A TK2222ATTD03 WBFBP-03A TK2907ATTD03) 150mA 500mA 100MHz 150mA	PDF
m6 marking transistor Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors TP9015NND03 TRANSISTOR C WBFBP-03B DESCRIPTION PNP Epitaxial Silicon Transistor 1.2x1.2×0.5 unit: mm FEATURES High hFE and good linearity Complementary to TP9014NND03	Original	WBFBP-03B TP9015NND03 WBFBP-03B TP9014NND03 Vol45 -100A, -100mA, -10mA m6 marking transistor	PDF
TRANSISTOR 1P Abstract: Transistor MARKING 1P 1p TRANSISTOR marking 1p transistor transistor 1P F marking transistor 1p 1 TK2222ATTD03 Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03A Plastic-Encapsulate Transistors TK2222ATTD03 C TRANSISTOR WBFBP-03A 1.6x1.6×0.5 unit: mm DESCRIPTION NPN Epitaxial planar Silicon Transistor TOP B FEATURES Complementary PNP Type available (TK2907ATTD03)	Original	WBFBP-03A TK2222ATTD03 WBFBP-03A TK2907ATTD03) 150mA 100MHz 150mA TRANSISTOR 1P Transistor MARKING 1P 1p TRANSISTOR marking 1p transistor transistor 1P F marking transistor 1p 1 TK2222ATTD03	PDF
transistor marking 1p Z Abstract: MMBT2222AE MMBT2907AE transistor 1p Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03A Plastic-Encapsulate Transistors MMBT2222AE C TRANSISTOR WBFBP-03A 1.6x1.6×0.5 unit: mm DESCRIPTION NPN Epitaxial planar Silicon Transistor TOP B FEATURES Complementary PNP Type available (MMBT2907AE)	Original	WBFBP-03A MMBT2222AE WBFBP-03A MMBT2907AE) transistor marking 1p Z MMBT2222AE MMBT2907AE transistor 1p	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03A Plastic-Encapsulate Transistors MMBT2222AE C TRANSISTOR WBFBP-03A 1.6x1.6×0.5 unit: mm DESCRIPTION NPN Epitaxial planar Silicon Transistor TOP B FEATURES Complementary PNP Type available (MMBT2907AE)	Original	WBFBP-03A MMBT2222AE WBFBP-03A MMBT2907AE) 150mA	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03B Plastic-Encapsulate Transistors S9013M TRANSISTOR DESCRIPTION NPN Epitaxial Silicon Transistor C WBFBP-03B 1.2x1.2×0.5 unit: mm FEATURES High Collector Current. (IC=500mA) Complementary to S9012M	Original	WBFBP-03B S9013M WBFBP-03B 500mA) S9012M 150mW 500mA 500mA 30MHz	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03B Plastic-Encapsulate Transistors S9012M TRANSISTOR C WBFBP-03B DESCRIPTION PNP Epitaxial Silicon Transistor 1.2x1.2×0.5 unit: mm FEATURES Complementary to S9013M Excellent hFE linearity 1. BASE	Original	WBFBP-03B S9012M WBFBP-03B S9013M 150mW -50mA -500mA,	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03A Plastic-Encapsulate Transistors TK2222ATTD03 C TRANSISTOR WBFBP-03A 1.6x1.6×0.5 unit: mm DESCRIPTION NPN Epitaxial planar Silicon Transistor TOP B FEATURES Complementary PNP Type available (TK2907ATTD03)	Original	WBFBP-03A TK2222ATTD03 WBFBP-03A TK2907ATTD03) 500mA 150mA 100MHz 150mA	PDF
marking J3 Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03B Plastic-Encapsulate Transistors TP9013NND03 TRANSISTOR DESCRIPTION NPN Epitaxial Silicon Transistor C WBFBP-03B 1.2x1.2×0.5 unit: mm FEATURES High Collector Current. (IC=500mA) Complementary to TP9012NND03	Original	WBFBP-03B TP9013NND03 WBFBP-03B 500mA) TP9012NND03 150mW 500mA 500mA 30MHz marking J3	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03D Plastic-Encapsulate Transistors C TK3904LLD03 TRANSISTOR WBFBP-03D 1.0x1.0×0.5 unit: mm DESCRIPTION NPN Epitaxial Silicon Transistor TOP B FEATURES C 1. BASE Epitaxial Planar Die Construction	Original	WBFBP-03D TK3904LLD03 WBFBP-03D TK3906LLD03) 100mA 100MHz	PDF

IC MARKING 1005 Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03D Plastic-Encapsulate Transistors C TK3906LLD03 TRANSISTOR WBFBP-03D 1.0x1.0×0.5 unit: mm DESCRIPTION PNP Epitaxial Silicon Transistor TOP B FEATURES C 1. BASE Epitaxial Planar Die Construction	Original	WBFBP-03D TK3906LLD03 WBFBP-03D TK3904LLD03) -10mA -50mA 100MHz -10mA IC MARKING 1005	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03A Plastic-Encapsulate Transistors TK2907ATTD03 C TRANSISTOR WBFBP-03A 1.6x1.6×0.5 unit: mm DESCRIPTION PNP Epitaxial planar type Silicon Transistor TOP B FEATURES Complementary NPN Type available (TK2222ATTD03)	Original	WBFBP-03A TK2907ATTD03 WBFBP-03A TK2222ATTD03) -500mA -50mA -150mA -15mA 100MHz	PDF
2t1 transistor Abstract: S9012M S9013M Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03B Plastic-Encapsulate Transistors S9012M TRANSISTOR C WBFBP-03B DESCRIPTION PNP Epitaxial Silicon Transistor 1.2x1.2×0.5 unit: mm FEATURES Complementary to S9013M Excellent hFE linearity 1. BASE	Original	WBFBP-03B S9012M WBFBP-03B S9013M 150mW 2t1 transistor S9012M S9013M	PDF
S9012M Abstract: S9013M Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03B Plastic-Encapsulate Transistors S9013M TRANSISTOR DESCRIPTION NPN Epitaxial Silicon Transistor C WBFBP-03B 1.2x1.2×0.5 unit: mm FEATURES High Collector Current. (IC=500mA) Complementary to S9012M	Original	WBFBP-03B S9013M WBFBP-03B 500mA) S9012M 150mW S9012M S9013M	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03B Plastic-Encapsulate Transistors S9012M TRANSISTOR C WBFBP-03B DESCRIPTION PNP Epitaxial Silicon Transistor 1.2x1.2×0.5 unit: mm FEATURES Complementary to S9013M Excellent hFE linearity 1. BASE	Original	WBFBP-03B S9012M WBFBP-03B S9013M 150mW	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03B Plastic-Encapsulate Transistors TP9013NND03 TRANSISTOR DESCRIPTION NPN Epitaxial Silicon Transistor C WBFBP-03B 1.2x1.2×0.5 unit: mm FEATURES High Collector Current. (IC=500mA) Complementary to TP9012NND03	Original	WBFBP-03B TP9013NND03 WBFBP-03B 500mA) TP9012NND03 150mW 500mA 500mA 30MHz	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors TP9015NND03 TRANSISTOR C WBFBP-03B DESCRIPTION PNP Epitaxial Silicon Transistor 1.2x1.2×0.5 unit: mm FEATURES High hFE and good linearity Complementary to TP9014NND03	Original	WBFBP-03B TP9015NND03 WBFBP-03B TP9014NND03 -100mA, -10mA -10mA 30MHz	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C TK3906NND03 TRANSISTOR WBFBP-03B 1.2x1.2×0.5 unit: mm DESCRIPTION PNP Epitaxial Silicon Transistor TOP B FEATURES C 1. BASE Epitaxial Planar Die Construction	Original	WBFBP-03B TK3906NND03 WBFBP-03B TK3904NND03) -50mA -10mA 100MHz -10mA	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03A Plastic-Encapsulate Transistors C TK3906TTD03 TRANSISTOR WBFBP-03A 1.6x1.6×0.5 unit: mm DESCRIPTION PNP Epitaxial Silicon Transistor TOP B FEATURES C 1. BASE Epitaxial Planar Die Construction	Original	WBFBP-03A TK3906TTD03 WBFBP-03A TK3904TTD03) -10mA -50mA 100MHz -10mA	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03A Plastic-Encapsulate Transistors MMBT2907AE C TRANSISTOR WBFBP-03A 1.6x1.6×0.5 unit: mm DESCRIPTION PNP Epitaxial planar type Silicon Transistor TOP B FEATURES Complementary NPN Type available(MMBT2222AE)	Original	WBFBP-03A MMBT2907AE WBFBP-03A MMBT2222AE) -50mA 100MHz -150mA -15mA	PDF

Privacy Settings

TRANSISTOR WB Search Results

TRANSISTOR WB Result Highlights (5)

TRANSISTOR WB Datasheets Context Search

MN1280

oz960

2t1 transistor

Untitled

Untitled

m6 marking transistor

TRANSISTOR 1P

transistor marking 1p Z

Untitled

Untitled

Untitled

Untitled

marking J3

Untitled

IC MARKING 1005

Untitled

2t1 transistor

S9012M

Untitled

Untitled

Untitled

Untitled

Untitled

Untitled