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    TRANSISTOR WZ Search Results

    TRANSISTOR WZ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR WZ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    mdd 1051

    Abstract: circuit k 3683 916c Transistors marking WZ ke marking transistor transistor xl 3001 S9614
    Text: . . . . . . . .l: :;. . . . . . . . . . . . . . . . . .’. . . . . . . . MIIA3.1950W9B 12 Ne.rch 1970 SUPERSEDING MIL.T.1950W9A 12 hub? 19s9 MSLITARY SPfXfFffXTfON .-. SFADCONDUCTOR DEVICE, TRANSISTOR, PNP, GBfMi14NIUM, HIGH-FREQUENCY


    Original     		PDF 1950W9B 1950W9A GBfMi14NIUM, UG-491AW 91-6C S-1950W9B Force-11 s9614163) mdd 1051 circuit k 3683 916c Transistors marking WZ ke marking transistor transistor xl 3001 S9614

    Q62702-C2289

    Abstract: No abstract text available
    Text: BCR 142W NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=22kΩ, R2=47kΩ Type Marking Ordering Code Pin Configuration BCR 142W WZs 1=B Q62702-C2289 Package 2=E 3=C SOT-323


    Original     		PDF Q62702-C2289 OT-323 Nov-26-1996 Q62702-C2289

    C2259

    Abstract: Q62702-C2259
    Text: BCR 142 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, drver circuit • Built in bias resistor R1=22kΩ, R2=47kΩ Type Marking Ordering Code Pin Configuration BCR 142 WZs 1=B Q62702-C2259 Package 2=E 3=C SOT-23 Maximum Ratings


    Original     		PDF Q62702-C2259 OT-23 Dec-18-1996 C2259 Q62702-C2259

    MARKING WZ

    Abstract: marking code 10 sot23 BCR142 BCR142F BCR142FL3 BCR142L3 BCR142T BCR142W SC75
    Text: BCR142. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=22kΩ, R2 =47kΩ BCR142/F/L3 BCR142T/W C 3 R1 R2 1 B 2 E EHA07184 Type Marking Pin Configuration BCR142 WZs 1=B 2=E


    Original     		PDF BCR142. BCR142/F/L3 BCR142T/W EHA07184 BCR142 BCR142F BCR142FL3 BCR142T BCR142W OT323 MARKING WZ marking code 10 sot23 BCR142 BCR142F BCR142FL3 BCR142L3 BCR142T BCR142W SC75

    BCR142

    Abstract: BCR142FL3 BCR142F BCR142L3 BCR142T BCR142W SC75
    Text: BCR142. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=22kΩ, R2 =47kΩ BCR142/F/L3 BCR142T/W C 3 R1 R2 1 B 2 E EHA07184 Type Marking Pin Configuration BCR142 WZs 1=B 2=E


    Original     		PDF BCR142. BCR142/F/L3 BCR142T/W EHA07184 BCR142 BCR142F BCR142FL3 BCR142T BCR142W OT323 BCR142 BCR142FL3 BCR142F BCR142L3 BCR142T BCR142W SC75

    BCR142

    Abstract: BCR142F BCR142FL3 BCR142L3 BCR142T BCR142W SC75
    Text: BCR142. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=22kΩ, R2 =47kΩ BCR142/F/L3 BCR142T/W C 3 R1 R2 1 B 2 E EHA07184 Type Marking Pin Configuration BCR142 WZs 1=B 2=E


    Original     		PDF BCR142. BCR142/F/L3 BCR142T/W EHA07184 BCR142 BCR142F BCR142FL3 BCR142T BCR142W OT323 BCR142 BCR142F BCR142FL3 BCR142L3 BCR142T BCR142W SC75

    MARKING WZ

    Abstract: BCR142 BCR142F BCR142FL3 BCR142L3 BCR142T BCR142W SC75 marking code TS
    Text: BCR142. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=22kΩ, R2 =47kΩ BCR142/F/L3 BCR142T/W C 3 R1 R2 1 B 2 E EHA07184 Type Marking Pin Configuration BCR142 WZs 1=B 2=E


    Original     		PDF BCR142. BCR142/F/L3 BCR142T/W EHA07184 BCR142 BCR142F BCR142FL3 BCR142T BCR142W OT323 MARKING WZ BCR142 BCR142F BCR142FL3 BCR142L3 BCR142T BCR142W SC75 marking code TS

    VSO05561

    Abstract: No abstract text available
    Text: BCR 142W NPN Silicon Digital Transistor 3 • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=22kΩ, R 2=47kΩ 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR 142W WZs Pin Configuration 1=B 2=E Package


    Original     		PDF VSO05561 EHA07184 OT-323 Oct-19-1999 VSO05561

    142T

    Abstract: SC-75
    Text: BCR 142T NPN Silicon Digital Transistor 3 • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=22kΩ, R 2=47kΩ 2 C 3 1 R1 VPS05996 R2 1 2 B E EHA07184 Type Marking BCR 142T WZs Pin Configuration 1=B 2=E Package


    Original     		PDF VPS05996 EHA07184 SC-75 Sep-29-1999 142T SC-75

    BCR142T

    Abstract: SC75
    Text: BCR142T NPN Silicon Digital Transistor 3  Switching circuit, inverter, interface circuit, driver circuit  Built in bias resistor R1=22k, R 2=47k 2 C 3 1 R1 VPS05996 R2 1 2 B E EHA07184 Type Marking BCR142T WZs Pin Configuration 1=B 2=E Package 3=C SC75


    Original     		PDF BCR142T VPS05996 EHA07184 Nov-29-2001 BCR142T SC75

    BCR142W

    Abstract: VSO05561
    Text: BCR142W NPN Silicon Digital Transistor 3  Switching circuit, inverter, interface circuit, driver circuit  Built in bias resistor R1=22k, R 2=47k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR142W WZs Pin Configuration 1=B 2=E Package 3=C SOT323


    Original     		PDF BCR142W VSO05561 EHA07184 OT323 Jul-13-2001 BCR142W VSO05561

    BCR142W

    Abstract: VSO05561
    Text: BCR142W NPN Silicon Digital Transistor 3  Switching circuit, inverter, interface circuit, driver circuit  Built in bias resistor R1=22k, R 2=47k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR142W WZs Pin Configuration 1=B 2=E Package 3=C SOT323


    Original     		PDF BCR142W VSO05561 EHA07184 OT323 Nov-29-2001 BCR142W VSO05561

    BCR142T

    Abstract: SC75
    Text: BCR142T NPN Silicon Digital Transistor 3  Switching circuit, inverter, interface circuit, driver circuit  Built in bias resistor R1=22k, R 2=47k 2 C 3 1 R1 VPS05996 R2 1 2 B E EHA07184 Type Marking BCR142T WZs Pin Configuration 1=B 2=E Package 3=C SC75


    Original     		PDF BCR142T VPS05996 EHA07184 Jul-13-2001 BCR142T SC75

    BCR142

    Abstract: No abstract text available
    Text: BCR142 NPN Silicon Digital Transistor 3  Switching circuit, inverter, interface circuit, driver circuit  Built in bias resistor R1=22k, R 2=47k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07184 Type Marking BCR142 WZs Pin Configuration 1=B 2=E Package 3=C SOT23


    Original     		PDF BCR142 VPS05161 EHA07184 Jul-13-2001 BCR142

    transistor tt 2222

    Abstract: TT 2222 npn TRIMMER capacitor 5-60 pF TT 2222 ic TT 2222 BLU99 4312 020 36642
    Text: bSE T> 711002b GGti27fi7 0^7 « P H I N BLU99 BLU99/SL PHILIPS INTERNATIONAL U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor prim arily intended fo r use in m obile radio transm itters in the u.h.f. band. The transistor is also very suitable fo r application in the 900 MHz m obile radio band.


    OCR Scan     		PDF 711002b GGb27fi7 BLU99 BLU99/SL OT122A) BLU99/SL OT122D) transistor tt 2222 TT 2222 npn TRIMMER capacitor 5-60 pF TT 2222 ic TT 2222 4312 020 36642

    Untitled

    Abstract: No abstract text available
    Text: MP4104 T O SH IB A TOSHIBA POWER TRANSISTOR MODULE SILICON NPN EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR 4 IN 1 MP4104 INDUSTRIAL APPLICATIONS Unit in mm HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD SWITCHING. 25.2 ± 0 .2


    OCR Scan     		PDF MP4104

    transistor tt 2222

    Abstract: BLY93A TT 2222 ic TT 2222 TT 2222 npn T-33-73 LY93A ROTA E Series IEC134 SOT-56
    Text: PHILIPS INTERNATIONAL MIE D B 711üaEb ÜQ2flQ0ci 1 B P H I N A J L B LLY93 Y93A M A IN T EN A N C E TYPE T~33~/3 V.H.F. POWER TRANSISTOR '\ N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industriar and military transmitters with a supply voltage of 28 V, The transistor is resistance stabilized. Every tran­


    OCR Scan     		PDF LY93A BLY93A transistor tt 2222 BLY93A TT 2222 ic TT 2222 TT 2222 npn T-33-73 LY93A ROTA E Series IEC134 SOT-56

    DM74S189

    Abstract: DM74S189AN DM74S189N
    Text: DM54S189/DM74S189/DM54S189A/DM74S189A fjgx National ÆüàSemiconductor DM54S189/DM74S189 64-Bit 16 x 4 TRI-STATE RAM DM54S189A/DM74S189A High Speed 64-Bit TRI-STATE RAM General Description These 64-bit active-element memories are monolithic Schottky-clamped transistor-transistor logic (TTL) arrays or­


    OCR Scan     		PDF DM54S189/DM74S189/DM54S189A/DM74S189A DM54S189/DM74S189 64-Bit DM54S189A/DM74S189A 64-Bit DM74S DM54S189/DM74S189/DM54S1 /DM74S189A TL/D/9232-5 DM74S189 DM74S189AN DM74S189N

    NEC IC D 553 C

    Abstract: ic 723 cn NEC JAPAN 3504 transistor on 4409
    Text: DATA SHEET SILICON TRANSISTOR 2SC5180 NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES PACKAGE DIMENSIONS • Low current consumption and high gain Units : mm i S 2ie 12 = 12 dB T Y P . @ Vce = 2 V, lc = 7 mA, f = 2 G H z


    OCR Scan     		PDF 2SC5180 2SC5180-- 2SC5180-T2 NEC IC D 553 C ic 723 cn NEC JAPAN 3504 transistor on 4409

    DM74S189

    Abstract: No abstract text available
    Text: DM54S189/DM7 4S189/DM54S189 A/DM7 4S189 A 53!] National dtjA Semiconductor DM54S189/DM74S189 64-Bit 16 x 4 TRI-STATE RAM DM54S189A/DM74S189A High Speed 64-Bit TRI-STATE RAM General Description These 64-bit active-element memories are monolithic Sctiottky-clamped transistor-transistor logic (TTL) arrays or­


    OCR Scan     		PDF DM54S189/DM74S189 64-Bit DM54S189A/DM74S189A 64-Bit DM74S TL/D/9232-5 DM54S189 /DM74S189 1N3064. DM74S189

    TLP721

    Abstract: Fx10050 11-5B2 E67349 VDE0884 tlp721gb
    Text: T O SH IB A TLP721 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR TLP721 OFFICE MACHINE HOUSEHOLD USE EQUIPMENT SOLID STATE RELAY SWITCHING POWER SUPPLY Unit in mm TI ir3 4 The TOSHIBA TLP721 consists of a photo-transistor optically coupled to a gallium arsenide infrared emitting diode in a four lead plastic


    OCR Scan     		PDF TLP721 E67349 E152349 UL1577 EN60065 EN60950 EN4330784 EN60950 Fx10050 11-5B2 E67349 VDE0884 tlp721gb

    marking code FV

    Abstract: Marking WZS
    Text: SIEMENS BCR 142W NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit « Built in bias resistor R1=22ki2, Ft2=47k£2 Pin Configuration WZs t =B Q62702-C2289 2=E Package o Marking Ordering Code BCR 142W II CO Type


    OCR Scan     		PDF 22ki2, Q62702-C2289 OT-323 300ns; marking code FV Marking WZS

    B 647 AC transistor

    Abstract: 142 transistor Marking WZS
    Text: SIEMENS BCR 142 NPN Silicon Digital Transistor * Switching circuit, inverter, interface circuit, drver circuit • Built in bias resistor R i=22kii, R2=47ki2 Marking Ordering Code BCR 142 WZs Pin Configuration Q62702-C2259 1=B 2=E Package o II CO Type SOT-23


    OCR Scan     		PDF 22kii, 47ki2) Q62702-C2259 OT-23 300ps; B 647 AC transistor 142 transistor Marking WZS

    Untitled

    Abstract: No abstract text available
    Text: S IE M E N S BCR 142W NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor Ri=22ki2, R2=47kfl ire □ CÜ J S E Ordering Code Pin Configuration WZs Q62702-C2289 1 =B Package H CO ro


    OCR Scan     		PDF 22ki2, 47kfl) Q62702-C2289 OT-323 Q120750 012Q751