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    TRANSISTOR Y 9F Search Results

    TRANSISTOR Y 9F Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR Y 9F Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    S229

    Abstract: MMBF5484LT1 S129 S219 jfet transistor s129 equivalent tf5r
    Text: MOTOROU SEMICONDUCTOR TECHNICAL Order this documsnt by MMBF5484LT11D DATA JFET Transistor — N-Channel MMBF5484LTI 2 SOURCE I 3 GATE a Tc = 25°C Linear Derating Factor Storage Channel Temperature THERMAL Range .$T2:%:Q$ .,\:.\ ‘:Y?< , ,>< ., Tstg -65 to +150


    Original     		PDF MMBF5484LT11D MMBF5484LTI MMBF5484LT1 S229 MMBF5484LT1 S129 S219 jfet transistor s129 equivalent tf5r

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC1967 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC1967 is a silicon NPN epitaxial planar type transistor designed Dimensions in mm for RF power amplifiers on U H F band mobile radio applications. 4 0±0 5 H


    OCR Scan     		PDF 2SC1967 2SC1967

    k6z transistor

    Abstract: MMBF170 iGSS 100nA Vgs 0v
    Text: MMBF170 v isH A Y N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR LITEM ZI y POWER SEMICONDUCTOR Features Low On-Resistance Low Threshold Low Input Capacitance Fast Switching Speed Low Input/Output Leakage SOT-23 Min Max -H :h“ A A 0.37 0.51 B 1.19 1.40


    OCR Scan     		PDF MMBF170 OT-23, MIL-STD-202, OT-23 DS30104 MMBF170 k6z transistor iGSS 100nA Vgs 0v

    2SA490

    Abstract: TRANSISTOR 3hm 2SC790 AC75
    Text: 490 2SA o ^ U 3 y p N P x ^ 5> ^ j> ì\ y ^ m ^ _ SILICON PNP EPITAXIAL MESA 03.6±g2 Power Amplifier Applications 2 S C 7 9 0 <D 3 > h ì - fì TRANSISTOR Unit in mm ntitiàmm o h ^ y ^ x 5> o n 7 9 / y * 'J T I ti J ] 1 0 W ? 7 x . ry/tcsatto Complementary to 2 S C 7 9 0


    OCR Scan     		PDF 90O3i 2SC790 320AB 2-10A1A 2sa490 2SA490 TRANSISTOR 3hm AC75

    KYS 30 40 diode

    Abstract: 40n60 transistor mos 30N60 2355Z wiom DC IXYS 30N60 of ic 3915 1XYS 30N60T 35N100
    Text: MbE 4bôb22b D I X Y S OGQQÔTM T H IX Y CORP □IXYS Data Book NO.91560A October 1991 "S" Series MOSIGBTs High Short Circuit SOA Insulated Gate Bipolar Transistor Features Guaranteed Short Circuit Capability SCSOA Low Input Capacitances Optimized for 60Hz to 30kHz Switching


    OCR Scan     		PDF 30kHz 1560A 4bflb55b Q000S1S IXSH20N60 IXSM20N60 KYS 30 40 diode 40n60 transistor mos 30N60 2355Z wiom DC IXYS 30N60 of ic 3915 1XYS 30N60T 35N100

    1mbh

    Abstract: YR39 D2050
    Text: 1MBH70D-090A IGBT : Outline Drawings INSULATED GATE BIPOLAR TRANSISTOR SiQ3 : Features • ¡S B U M V y-i''?' • High Speed Sw itching Low Saturation Voltage • A X'h'f— hS i/t M O S -y—MHia #/jv§)y'C.y^— Small Package High Impedance Gate Gate


    OCR Scan     		PDF 1MBH70D-090A 50/iS) BH70D-090A 1mbh YR39 D2050

    FZ 300 R 06 KL

    Abstract: PA1603 Transistor NP 3773 TRANSISTOR PHL 641 PA1603CX uPA1603 L0734 IS352 l 0734
    Text: ^ • J Ê S Ù * ^ 0 ,7 - Com pound Field Effect P o w e r Transistor " ^ y /¿PA1603 à, i y A 1 6 3 \ or7“ - MO S F E T 'Z U H ' MOS F E T h m iÜ M tfifr & & Ô 4 / g -> -y ? '*7 - MOS F E T 7 W T - , ïü f f ln i^ .y ÿ W f f l ; ÿ > 7 ° 9° O


    OCR Scan     		PDF uPA1603 FZ 300 R 06 KL PA1603 Transistor NP 3773 TRANSISTOR PHL 641 PA1603CX L0734 IS352 l 0734

    2SC2958

    Abstract: transistor AE 2SC2959 2SA1221 F0246
    Text: NEC Aj m^Tjvrx '> i; =3 > h = 7 > i> 7 .9 Silicon T ra n sisto rs 2 S C 2 9 5 8 ,2959 NPN Silicon Epitaxial Transistor Audio Frequency Power Amplifier ^•JgH/PACKAGE DIMENSIONS # g/FEA TU RES oTViDSïtfilèK K7 -Í 7", ¡ti* , MIE, is Ja I S t i . \f y 9 "j :y 3 >


    OCR Scan     		PDF 2SC2958 2SC2959 2SA1221, A1222 A1221/2SC2958 ---2SA1222/2SC2959 2SC2958 transistor AE 2SC2959 2SA1221 F0246

    2SB810

    Abstract: JIS211 transistor C982 C382 n1j 048 ic 6116 IC 7824 ST
    Text: V y □ > h 7 > y X ^ Silicon Transistor 2SB810 P N P x \£ 2 * 4$ V y ' j a > h 7 > v X 5 f *M $ B I « # t : mm * - b v h x H ï îfiO i£ J B  lÜ * f fl,  * Œ * * 3 t Sg » 0> * - * K 7 -T 7 , * <& {*#» K 5 < O ig h F E T 4 .0 ± 0 .2 U T ftiS T T o


    OCR Scan     		PDF 2SB810 O2SD1020ta d11736jj4v0ds00 JIS211 2SB810 JIS211 transistor C982 C382 n1j 048 ic 6116 IC 7824 ST

    AF02

    Abstract: 2SJ198 2SK1484 K0852
    Text: -y 5 7 • h ~ mos M O S Field Effect Transistor 2 P x 4 J 1 9 8 MOS F E T 2SJ198 a P f- ^ * M m MOS F E T T, 5 V iz j: § S IC mm -y f- > r m ^ - v t o *M O S FET l i t 5.2 MAX. <, X >f y f- > 7 ? f- ^ - ? ^ i K > D C - D C X ' f «y f - i - ^ i S T " i “ o


    OCR Scan     		PDF 2SJ198 2SJ198 2SK1484 IEI-620) AF02 K0852

    marking M63

    Abstract: marking K50 transistor
    Text: T I • I SI NEC Ar 7 lÏ T A \ f Compound Transistor A GN1L4Z M pnp ^ 4# j u M '> y =i > » o/<>f r x i Ê S t è Ri = 4 7 kû (Ta -2 5 nn *Ê *fft*5 È :fê 9 9 i = ^ u 9 9 ? v 9 9 B& V -y ÿ f S i W ± V CEO - 5 0 V V ebo - V :< H ) ili \ 9 {£ ~y 3c


    OCR Scan     		PDF PWS10 Cycled50 marking M63 marking K50 transistor

    transistor sb 772

    Abstract: TRANSISTOR D 1853 ACS 086 SK FN 521 512 CJ3 2SK1853 pj 0266 SB 772 KSB 772 SF94
    Text: s— S 5 • S ''— NEC h* MOS MOS F E T M O S Field Effect Power Transistor 2SK1853 N + s< n— X >T M O S F E T y ^ I t i 2 S K 1853 ¿ ,N > 5v F E T T", h 0 ^ °7 - £ W H ] M O S (^ - fi i mm i c co a 1.* (3 j: ^ y" r " ' <A X T'-to ix ^ y f > i i :* > m % T",


    OCR Scan     		PDF 2SK1853 transistor sb 772 TRANSISTOR D 1853 ACS 086 SK FN 521 512 CJ3 2SK1853 pj 0266 SB 772 KSB 772 SF94

    transistor marking s72

    Abstract: transistor s72 k72 transistor 702 TRANSISTOR sot-23 s72 sot 23 k72 transistor sot 23 S72 2n7002 S72 transistor marking 702 2n7002 702
    Text: 2N7002 VISHAY N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR LITEMZI y POWER SEMICONDUCTOR Features Low On-Resistance: 2.5Q Low Threshold: 2.1V Low Input Capacitance: 22pF Fast Switching Speed: 7.0ns Low Input/Output Leakage SOT-23 ~*\ : h - A TOP VIEW


    OCR Scan     		PDF 2N7002 OT-23, MIL-STD-202, OT-23 DS11303 2N7002 transistor marking s72 transistor s72 k72 transistor 702 TRANSISTOR sot-23 s72 sot 23 k72 transistor sot 23 S72 2n7002 S72 transistor marking 702 2n7002 702

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE b^E D • bbSS^Sl QQ 3 Q 337 b54 « A P X Philips Semiconductors Product Specification PowerMOS transistor BUK100-50GL Logic level DESCRIPTION Monolithic temperature and overioa<y>rotected logic level power


    OCR Scan     		PDF BUK100-50GL Q03034S

    2SB1318

    Abstract: BH rn transistor 3Fp transistor
    Text: zr— S • — K NEC ^ Silicon P o w e r Transistor 2SB1318 PNPI ’J=l> m « W t : mm 7.0 MAX. 1-2 o y — *J > h y ^ f â iC O t z & y , o S i t § Ë Â S^C I , (T a L Ä * M S V c E (s a t ) ~ c ~ t o = 25 °C ) B& g -§§- ¥ /E fï a V 9 9 • '•'i — X fai 16 Eh


    OCR Scan     		PDF 2SB1318 -100n 2SB1318 BH rn transistor 3Fp transistor

    NDS9942

    Abstract: p channel mosfet
    Text: National e * M a y 19 96 Semiconductor" NDS9942 Dual N & P-Channel Enhancement Mode Field Effect Transistor Features General Description These dual N- and P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS


    OCR Scan     		PDF NDS9942 SD1130 NDS9942 p channel mosfet

    sf 128 transistor

    Abstract: 2SK2159 TRANSISTOR SF 128 6GDG TC-7989A
    Text: h ^ > v x & MOS Field Effect Transistor 2SK2159 N MOS FET m 2SK215 9 it 1.5 V i l Ü £ < y<DN3- -V % U , f£ Œ T i ® -? è , m x 'f y i - > 7 m MOS FETT' & w t f o K t-T t '/ c ® , IM & : m m m 4.5 ±0.1 < £ !> '(£ - r i * * 7 ÎC i f W f ê Œ ®


    OCR Scan     		PDF 2SK2159 2SK2159it sf 128 transistor 2SK2159 TRANSISTOR SF 128 6GDG TC-7989A

    2SK150

    Abstract: 2SK12 2SK15 transistor 2sk 2SK120 2SK11 2SK12-Y 2SK150 A 2SK110 SK 10 BAT 065
    Text: 2 5 ,1 1 5 ' tJ n y n * v % i \ > m 8 i e w i m m ^ y v z & SILICON N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR 2 5 ,1 2 - i 2 S K 15 ii it x o is « « « « * o 1 O D C , A C S S A * S !ttlE l« iffl O O ^ O X -1 7 f- •/


    OCR Scan     		PDF 2SK15) 2SK11) 2SK12, 3800iiu 3800/tU 2SK12 3SK15 2SK12) 10kfl) 2SK150 2SK12 2SK15 transistor 2sk 2SK120 2SK11 2SK12-Y 2SK150 A 2SK110 SK 10 BAT 065

    2SD103

    Abstract: transistor mp IC marking jw
    Text: SILICON TRANSISTOR 2SD1033 NPN SILICON EPITAXIAL TRANSISTOR MP-3 D E S C R IP T IO N 2S D 103 3 is designed fo r C olor T V Vertical D eflection O utput, P A C K A G E D IM E N S IO N S in m illim eters esp ecially in H y b rid In te g rate d Circuits. FEATURES


    OCR Scan     		PDF 2SD1033 2SB768 I-1209} 2SD103 transistor mp IC marking jw

    Untitled

    Abstract: No abstract text available
    Text: TRANSISTOR ARRAY <1 Q 2 TRIPLE NPN T K series DARLINGTON T R A N S IS T O R A R R A Y 4* F e a tu re s Ä • NPN 3 E S # « J£ • 8 > iOu -i > 7 ' \ > ,-z.y • * - K A' , Vz = 60±l0V • h P t = 2.5W • ¡S& jfcitlipp, min.1500 • Triple NPN darlington transistor array


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: P D - 9. 1597 International IOR Rectifier IRG4BC20S P R E L IM IN A R Y Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter


    OCR Scan     		PDF IRG4BC20S O-220AB

    Untitled

    Abstract: No abstract text available
    Text: SA N Y O SEMICONDUCTOR lEE D " j 7 n 7 D 7 b CORP □□□5133 2SD1650 NPN Triple Diffused Planar Silicon Transistor 2039 Color TV Horizontal Deflection Output AppIications with Damper Diode 1748B Applications . High-voltage, power switching Features . Fast speed (tfmaxsO.ilus).


    OCR Scan     		PDF 2SD1650 1748B IS-126 1S-126A IS-20MA

    b527

    Abstract: tic 263a NDP506A
    Text: National Semiconductor” M a y 19 95 NDP506A / NDP506B NDB506A / NDB506B N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field • 26 and 24A, 60V. RDS 0N| = 0.05 and 0.06J2. effect transistors are produced using National's


    OCR Scan     		PDF NDP506A NDP506B NDB506A NDB506B bSD113D b527 tic 263a

    2SK992

    Abstract: U71E 720-ES RXSU 4 T108 T460 332h tt 22
    Text: MOS Field Effect Pow er Transistor 2SK992 MOS F E T j i m 2SK992 Ü , m FET f , 5 V ifiJ^ IC iotbi i i z i è H fë m ib W fiè & îïïim z a -y - f> < , * y v / ' f K, 7 X A "/ f - > r w t t t f ililT ft» x t- t. & £ £ > , t - IM S : mm 10.5 MAX.


    OCR Scan     		PDF 2SK992 26-Lfli06) 332-H 37-ffi 29-BlSfl 2SK992 U71E 720-ES RXSU 4 T108 T460 332h tt 22