TRANSISTORS DAL Search Results

TRANSISTORS DAL Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTORS DAL Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
GT30J124 Abstract: smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs	Original	PDF	SCE0004I SC-43) 2SC1815 GT30J124 smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram
GT30F124 Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123 Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs	Original	PDF	2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
GT30F131 Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01 Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs	Original	PDF	SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
TIP150 Abstract: No abstract text available Text: SEMICONDUCTORS TIP150 SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. High voltage, high forward and reverse energy designed for industrial and consumer applications.	Original	PDF	TIP150 O-220 O-220 TIP150
mj10016 Abstract: 2sc1173 equivalent Silicon NPN Power Transistors bd139 equivalent equivalent of TIP122 mje340 equivalent BD435/fw26025a1 equivalent 2N6059 equivalent 2sd526 equivalent 2N3773 equivalent MJE371 equivalent Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10015 MJ10016 SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode 50 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 AND 500 VOLTS 250 WATTS The MJ10015 and MJ10016 Darlington transistors are designed for high–voltage,	Original	PDF	MJ10015 MJ10016 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2sc1173 equivalent Silicon NPN Power Transistors bd139 equivalent equivalent of TIP122 mje340 equivalent BD435/fw26025a1 equivalent 2N6059 equivalent 2sd526 equivalent 2N3773 equivalent MJE371 equivalent
BD650 Abstract: BD646 BD648 BD644 BD652 IC 648 bd650 bd649 audio 652 6 pin ic transistor bd650 BD643 Text: SEMICONDUCTORS BD644/646/648/650/652 SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application.	Original	PDF	BD644/646/648/650/652 O-220 BD643, BD645, BD647, BD649 BD651 BD644 BD646 BD648 BD650 BD646 BD648 BD644 BD652 IC 648 bd650 bd649 audio 652 6 pin ic transistor bd650 BD643
BD645 Abstract: bd647 BD649 darlington bd647 BD643 BD651 bd650 bd649 BD644 BD649 equivalent BD646 Text: SEMICONDUCTORS BD643/645/647/649/651 SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application.	Original	PDF	BD643/645/647/649/651 O-220 BD644, BD646, BD648, BD650 BD652 BD643 BD645 BD647 BD645 bd647 BD649 darlington bd647 BD643 BD651 bd650 bd649 BD644 BD649 equivalent BD646
TPC6801 Abstract: WJ 5252 F Battery chargers for portable dvd china SOT89 PNP marking GA MARKING WB SOT-89 2SC5703 TOSHIBA BIPOLAR POWER TRANSISTOR 2SA2056 2SA2058 2SC5738 Text: New Product Guide Low-Saturation-Voltage Power Transistors in small surface-mount packages PRODUCT GUIDE Low-Saturation-Voltage Power Transistors Overview Features These newly developed low-saturation-voltage transistors are based on the low-withstanding voltage Hi-Met III (3rd-generation high-efficiency mesh	Original	PDF
transistor equivalent of BU406 Abstract: bu406 replacement type transistor 2sc1827 transistor 1557 b transistor tip142 transistor 2SA1046 equivalent of transistor mje13007 BU326 BU108 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU406 BU407 NPN Power Transistors These devices are high voltage, high speed transistors for horizontal deflection output stages of TV’s and CRT’s. • • • • 7 AMPERES NPN SILICON POWER TRANSISTORS 60 WATTS 150 and 200 VOLTS	Original	PDF	220AB BU406 BU407 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B transistor equivalent of BU406 bu406 replacement type transistor 2sc1827 transistor 1557 b transistor tip142 transistor 2SA1046 equivalent of transistor mje13007 BU326 BU108 BU100
CASE 221A Style 1 Abstract: BU108 BD907 equivalent Darlington NPN Silicon Diode NPN POWER DARLINGTON TRANSISTORS high voltage high ICM TO-247 2SC144 2N555 BU326 BU100 MJE520 equivalent Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10020 MJ10021  Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode Designer's 60 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 200 AND 250 VOLTS 250 WATTS The MJ10020 and MJ10021 Darlington transistors are designed for high–voltage,	Original	PDF	MJ10020 MJ10021 MJ10021 Performa32 TIP73B TIP74 TIP74A TIP74B TIP75 CASE 221A Style 1 BU108 BD907 equivalent Darlington NPN Silicon Diode NPN POWER DARLINGTON TRANSISTORS high voltage high ICM TO-247 2SC144 2N555 BU326 BU100 MJE520 equivalent
mje13009 equivalent Abstract: buv48 equivalent TRANSISTOR REPLACEMENT table for transistor BUV47 BD241A MOTOROLA BU108 TIP33C equivalent TIP41C EQUIVALENT BD4202 buv48 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV48 BUV48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 150 WATTS The BUV48/BUV48A transistors are designed for high–voltage, high–speed, power	Original	PDF	BUV48/BUV48A BUV48 BUV48A TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B mje13009 equivalent buv48 equivalent TRANSISTOR REPLACEMENT table for transistor BUV47 BD241A MOTOROLA BU108 TIP33C equivalent TIP41C EQUIVALENT BD4202
BD139 fall time Abstract: TRANSISTOR REPLACEMENT GUIDE transistor cross reference BUS98 2n3055 motor control circuits BU108 MJ10021 equivalent buv48 equivalent MJ2268 Motorola transistors MJE1100 TO 127 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUS98 BUS98A  Data Sheet Designer's SWITCHMODE Series NPN Silicon Power Transistors 30 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS BVCEO 250 WATTS 850 – 1000 V (BVCES) The BUS98 and BUS98A transistors are designed for high–voltage, high–speed,	Original	PDF	BUS98 BUS98A BUS98A TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A BD139 fall time TRANSISTOR REPLACEMENT GUIDE transistor cross reference 2n3055 motor control circuits BU108 MJ10021 equivalent buv48 equivalent MJ2268 Motorola transistors MJE1100 TO 127
application MJ10023 Abstract: BU108 2N6058 2n3055 motor control circuits darlington tip31 mj15004 equivalent BDX54 bd139 equivalent transistor MJ15022 equivalent 2SB56 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10022 MJ10023  Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode Designer's 40 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 350 AND 400 VOLTS 250 WATTS The MJ10022 and MJ10023 Darlington transistors are designed for high–voltage,	Original	PDF	MJ10022 MJ10023 MJ10023 Performanc32 TIP73B TIP74 TIP74A TIP74B TIP75 application MJ10023 BU108 2N6058 2n3055 motor control circuits darlington tip31 mj15004 equivalent BDX54 bd139 equivalent transistor MJ15022 equivalent 2SB56
LM3046 Abstract: No abstract text available Text: LM3046 LM3046 Transistor Array Literature Number: SNLS372A LM3046 Transistor Array General Description Features The LM3046 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Two of the transistors are internally connected to form a differentiallyconnected pair. The transistors are well suited to a wide	Original	PDF	LM3046 LM3046 SNLS372A 14-lead

AMPLIFIER 2SD718 2sb688 schematic Abstract: MJ900 2SD718 2sb688 amplifier schematic 2SC1419 2SA94 2SA124 2SD331 2SC1116 IR403 2SC2250 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJ1000 MJ1001* Medium-Power Complementary Silicon Transistors *Motorola Preferred Device . . . for use as output devices in complementary general purpose amplifier applications. 10 AMPERE DARLINGTON POWER TRANSISTORS	Original	PDF	MJ1000 MJ1001* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C AMPLIFIER 2SD718 2sb688 schematic MJ900 2SD718 2sb688 amplifier schematic 2SC1419 2SA94 2SA124 2SD331 2SC1116 IR403 2SC2250
2sd880 equivalent Abstract: tip3055 equivalent BU108 mje2055 2n3055 motor control circuits 2N6576 equivalent equivalent of 2sc2071 2N6107 equivalent BU326 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE5850 MJE5851* MJE5852*  Data Sheet Designer's SWITCHMODE Series PNP Silicon Power Transistors *Motorola Preferred Device 8 AMPERE PNP SILICON POWER TRANSISTORS 300, 350, 400 VOLTS 80 WATTS The MJE5850, MJE5851 and the MJE5852 transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They	Original	PDF	MJE5850, MJE5851 MJE5852 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2sd880 equivalent tip3055 equivalent BU108 mje2055 2n3055 motor control circuits 2N6576 equivalent equivalent of 2sc2071 2N6107 equivalent BU326 BU100
Motorola transistors MJE3055 TO 127 Abstract: MJE1092 transistors 2sd673 2SC1419 transistor MJE6043 BU124 MJW16010 BD590 2SB654 bdw93c pin configuration Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN D44VH PNP D45VH Complementary Silicon Power Transistors These complementary silicon power transistors are designed for high–speed switching applications, such as switching regulators and high frequency inverters.	Original	PDF	D44VH D45VH TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C Motorola transistors MJE3055 TO 127 MJE1092 transistors 2sd673 2SC1419 transistor MJE6043 BU124 MJW16010 BD590 2SB654 bdw93c pin configuration
BU108 Abstract: 62-3-1-2 2N555 MJ4361 2SC889 MJ1000 MJ3237 BDW94 bd95 DTS801 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5877 2N5878 Complementary Silicon High-Power Transistors . . . designed for general–purpose power amplifier and switching applications. 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 – 80 VOLTS 150 WATTS	Original	PDF	2N5877 2N5878 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C BU108 62-3-1-2 2N555 MJ4361 2SC889 MJ1000 MJ3237 BDW94 bd95 DTS801
2SA1046 Abstract: BU108 TRANSISTOR BC 239 c BU326 BU100 mje15033 replacement Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6387 2N6388* Plastic Medium-Power Silicon Transistors *Motorola Preferred Device . . . designed for general–purpose amplifier and low–speed switching applications. DARLINGTON 8 AND 10 AMPERE NPN SILICON POWER TRANSISTORS	Original	PDF	2N6387 2N6388 2N6387, 220AB 2N6388* TIP73B TIP74 TIP74A 2SA1046 BU108 TRANSISTOR BC 239 c BU326 BU100 mje15033 replacement
2Sd331 npn transistor Abstract: 724 motorola NPN Transistor with collector heat pad BU108 2SA1046 MJ15003 300 watts amplifier MOTOROLA MJD122 application note ST T4 3580 724 motorola NPN Transistor with heat pad BDX54 BU326 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJD122* PNP MJD127* Complementary Darlington Power Transistors DPAK For Surface Mount Applications *Motorola Preferred Device Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTORS	Original	PDF	2N6040 2N6045 TIP120 TIP122 TIP125 TIP127 MJD122* MJD127* TIP73B TIP74 2Sd331 npn transistor 724 motorola NPN Transistor with collector heat pad BU108 2SA1046 MJ15003 300 watts amplifier MOTOROLA MJD122 application note ST T4 3580 724 motorola NPN Transistor with heat pad BDX54 BU326
2SC1943 Abstract: 2n5037 2SC2322 2sa1046 bd349 bD127 BUV18A 2SC1903 mje5195 2SD341 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Advance Information Complementary Silicon Power Transistors The MJ15011 and MJ15012 are PowerBase power transistors designed for high–power audio, disk head positioners, and other linear applications. These devices	Original	PDF	MJ15011 MJ15012 MJ15011* MJ15012* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A 2SC1943 2n5037 2SC2322 2sa1046 bd349 bD127 BUV18A 2SC1903 mje5195 2SD341
2sc5066 Abstract: MT3S111P MT3S111 toshiba transistors catalog TIM4450-4UL TGI1314-50L MT3S106 MT4S200T X-band low noise amplifiers toshiba 2SC3136 Text: SEMICONDUCTOR GENERAL CATALOG Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs Radio-Frequency Bipolar Power Transistors Radio-Frequency Diodes Radio-Frequency Power Amp ICs	Original	PDF	SCE0004I 2SC380TM 2sc5066 MT3S111P MT3S111 toshiba transistors catalog TIM4450-4UL TGI1314-50L MT3S106 MT4S200T X-band low noise amplifiers toshiba 2SC3136
A-083081-2 Abstract: RETS195H Text: LM195,LM395 LM195/LM395 Ultra Reliable Power Transistors Literature Number: SNOSBO4B LM195/LM395 Ultra Reliable Power Transistors General Description The LM195/LM395 are fast, monolithic power integrated circuits with complete overload protection. These devices,	Original	PDF	LM195 LM395 LM195/LM395 A-083081-2 RETS195H
MJ15015 TRANSISTOR REPLACEMENT GUIDE Abstract: MJ15015 equivalent MJ2955 replacement 2N3055A 2n3055 2N3055 BU108 tr bc 338 MJ15015 parts 2SB75 2SC1051 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Complementary Silicon High-Power Transistors 2N3055A MJ15015* . . . PowerBase complementary transistors designed for high power audio, stepping motor and other linear applications. These devices can also be used in power	Original	PDF	2N3055 MJ2955. 2N3055A MJ15015* MJ2955A MJ15016* TIP73B TIP74 TIP74A TIP74B MJ15015 TRANSISTOR REPLACEMENT GUIDE MJ15015 equivalent MJ2955 replacement 2N3055A 2n3055 BU108 tr bc 338 MJ15015 parts 2SB75 2SC1051

TRANSISTORS DAL Search Results

TRANSISTORS DAL Result Highlights (5)

TRANSISTORS DAL Datasheets Context Search

GT30J124

GT30F124

GT30F131

TIP150

mj10016

BD650

BD645

TPC6801

transistor equivalent of BU406

CASE 221A Style 1

mje13009 equivalent

BD139 fall time

application MJ10023

LM3046

AMPLIFIER 2SD718 2sb688 schematic

2sd880 equivalent

Motorola transistors MJE3055 TO 127

BU108

2SA1046

2Sd331 npn transistor

2SC1943

2sc5066

A-083081-2

MJ15015 TRANSISTOR REPLACEMENT GUIDE