MB4213
Abstract: F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD
Text: Table of Contents Index 5 SMD Transistors Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal Darlington Transistors
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SSIP-12
KIA6283K
KIA7217AP
SSIP-10
KIA6240K
KIA6801K
KIA6901P/F
MB4213
F10P048
mn1280
mb4213 equivalent
smd transistor zaa
diode zener ZD 15
ic mb4213
transistor 2AX SMD
252 B34 SMD ZENER DIODE
bc237 equivalent SMD
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alternator diode 1776 B
Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)
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Hig86-755-3679515
alternator diode 1776 B
2az marking transistor sot-23
SMD SOT23 transistor MARK Y2
ic mb4213
NEC 12F triac
F10P048
ktc3114 equivalent
SMD TRANSISTOR MARKING 02N
DIODE PJ 57 ss14
BC517 equivalent
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oz960
Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors
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KIA7900PI
TC7SH04FU
KIC7SH04FU
SC604*
KAC3301QN
M51943
KIA7042AP/AF
TC7SH08FU
KIC7SH08FU
LT1937
oz960
khb*9D5N20P
MB4213
KIA78*pI
MN1280
F10P048
KIA7812A
MJE13007
mb4213 equivalent
TRANSISTOR SMD N2 3j
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fmmt4123
Abstract: ZB smd marking
Text: Transistors IC SMD Type Switching Transistors FMMT4123 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 Switching transistors. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter
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FMMT4123
OT-23
100MHz
140KHz
15KHz
fmmt4123
ZB smd marking
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philips diode PH 33D
Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817
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1N821
1N821A
1N823
1N823A
1N825
1N825A
1N827
1N827A
1N829
1N829A
philips diode PH 33D
PH C5V1
philips diode PH 33m
philips diode PH 33J
PH 33D
PH33D
ph33g
33G PH DIODE
PH 33G
philips diode PH 37m
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marking A4t sot23
Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE
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1N5817
1N821
1N5818
1N821A
1N5819
marking A4t sot23
A1t SOT23
3Ft SOT23
PH C5V1
transistor t04 sot23
A4T SOT23
transistor marking codes A4p
sot23 marking A1T
A6t SOT23
marking z2p
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Power Bipolar Transistors General TRANSISTOR RATINGS VCEmax Voltage ratings IC = x mA COLLECTOR TO BASE VCBmax The maximum permissible instantaneous voltage between collector and base terminals. The collector voltage is negative with respect to base in pnp transistors and
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MBE249
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TPV 3100
Abstract: TPM-4100 application note transistor TPV 3100 trw rf disadvantages of Magic tee trw rf semiconductors TPV-3100 TPV3100 108AN zf transmission
Text: Order this document by AN1034/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN1034 THREE BALUN DESIGNS FOR PUSH-PULL AMPLIFIERS Single RF power transistors seldom satisfy today’s design criteria; several devices in separate packages1, or in the same package balanced, push-pull or dual transistors , must
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AN1034/D
AN1034
TPV 3100
TPM-4100 application note
transistor TPV 3100
trw rf
disadvantages of Magic tee
trw rf semiconductors
TPV-3100
TPV3100
108AN
zf transmission
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Untitled
Abstract: No abstract text available
Text: QS6J3 Transistors Small switching −20V, −1.5A QS6J3 zExternal dimensions (Unit : mm) TSMT6 2.8 1.6 (6) (4) (3) (5) 2.9 (2) 0.4 (1) 1pin mark 0.85 0.16 zFeatures 1) Two Pch MOSFET transistors in a single TSMT6 package. 2) Pch Treueh MOSFET have a low on-state resistance
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Untitled
Abstract: No abstract text available
Text: QS6J3 Transistors Small switching −20V, −1.5A QS6J3 zExternal dimensions (Unit : mm) TSMT6 2.8 1.6 (6) (4) (3) (5) 2.9 (2) 0.4 (1) 1pin mark 0.85 0.16 zFeatures 1) Two Pch MOSFET transistors in a single TSMT6 package. 2) Pch Treueh MOSFET have a low on-state resistance
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Untitled
Abstract: No abstract text available
Text: Transistors IC SMD Type Product specification FMMT4123 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 Switching transistors. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter
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FMMT4123
OT-23
100MHz
140KHz
15KHz
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Untitled
Abstract: No abstract text available
Text: ZBF579 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)25 V(BR)CBO (V)25 I(C) Max. (A)30m Absolute Max. Power Diss. (W) Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A)10n @V(CBO) (V) (Test Condition)10
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ZBF579
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RSL020P03
Abstract: P-channel power mosfet 30V
Text: RSL020P03 Transistors 4V Drive Pch MOSFET RSL020P03 zStructure Silicon P-channel MOSFET zDimensions Unit : mm TUMT6 0.2Max. zFeatures 1) Low On-resistance. 2) High speed switching. zApplications Switching Abbreviated symbol : SL zPackaging specifications
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RSL020P03
RSL020P03
P-channel power mosfet 30V
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Untitled
Abstract: No abstract text available
Text: RSL020P03 Transistors 4V Drive Pch MOSFET RSL020P03 zStructure Silicon P-channel MOSFET zDimensions Unit : mm TUMT6 0.2Max. zFeatures 1) Low On-resistance. 2) High speed switching. zApplications Switching Abbreviated symbol : SL zPackaging specifications
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RSL020P03
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Transistor BSX 63-10
Abstract: Transistor BSX 62-16 BSX62 Q60218-X62-B BSX63 Q60218-X62-C Q60218-X62-D Q60218-X63-B Q60218-X63-C
Text: BSX 62, BSX 63 NPN transistors for AF output stages and switching applications B S X 62 and B S X 63 are epitaxial silicon NPN planar transistors in a case 5 C 3 DIN 41873 TO -39 . The collector is electrically connected to the case. The transistors are particularly suitable for A F output stages and as a medium-power switch.
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Q60218-X62-B
Q60218-X62-C
Q60218-X62-D
Q60218-X63-B
Q60218-X63-C
at7rase-25Â
BSX62BSX63
Transistor BSX 63-10
Transistor BSX 62-16
BSX62
BSX63
Q60218-X63-C
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Untitled
Abstract: No abstract text available
Text: BDV91 BDV93 BDV95 _ J ^ILIP S I N T E R N A T I O N A L 5bE ]> • 7 1 1 Q û 2 b 0 0 4 3 4 0 b 23b M P H I N T - 3 3 - / 3 SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N epitaxial base power transistors in the plastic SOT-93 envelope. These transistors are intended
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BDV91
BDV93
BDV95
OT-93
BDV92,
BDV94
BDV96.
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BC5508
Abstract: 6CW66 BC5588 BC8488 TRANSISTOR bc5508 1GW NPN 8C546 smd transistor marking 1gw 1gw transistor SMD Transistors 1gw
Text: Selection Guide Page Small Signal Transistors 42 Small Signal MOSFETs 43 Junction FETs 44 Power Transistors 49 Switching Diodes 50 Schottky Diodes 51 Low Leakage Diodes 52 Stabistor Diodes 52 Zener Diodes 53 Transient Voltage Suppressors TVS 57 Current Limiting Diodes
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OT-23
350mW
CMPTB099
CMPT2222A
trK1000V)
CMPS5064
OT-23
OT-89
CQ89D
CQ89M
BC5508
6CW66
BC5588
BC8488
TRANSISTOR bc5508
1GW NPN
8C546
smd transistor marking 1gw
1gw transistor
SMD Transistors 1gw
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SVI 3104 c
Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or
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AN83301-1
NE24615
AN83302
AN83303-1
NE71083
NE70083
AN83901
AN85301
11/86-LN
AN86104
SVI 3104 c
UPC1678G
ne333
stb 1277 TRANSISTOR equivalent
transistor bf 175
NE85635 packaging schematic
NE72000 VC
svi 3104
NE9000
NE720
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TIS69 equivalent
Abstract: 2N3575 Germanium itt TIS59 TIS58 2N2386 TIS26
Text: IN T R O D U C T IO N This booklet is designed to simplify your selection of field effect transistors, which best meet your requirement. It is a comprehensive pocket size reference to your widest choice of field effect transistors. This broad selection is your best assurance of pin-pomting the
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2N5045,
2N5046,
2N5047
TIS69 equivalent
2N3575
Germanium itt
TIS59
TIS58
2N2386
TIS26
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transistor BD 677
Abstract: BD 675 BD675 677d
Text: ES C T> m ÔEBSbOS 00043^5 b H S I E 6 NPN Silicon Darlington Transistors SIEMENS AKTIENGESELLSCHAF Î5C °*395 T-33-29 ~ BD 675 BD 677 D BD 679 Epibase power darlington transistors 40 W BD 675, BD 677, and BD 679 are monolithic NPN silicon epibase power darlington
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T-33-29
BD679
a23SbOS
00043RS
BD675,
transistor BD 677
BD 675
BD675
677d
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Untitled
Abstract: No abstract text available
Text: • bbS3^31 00353^1 DSD H A P X N AUER PHILIPS/DISCRETE BSR30 to 33 L7E D J V SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in miniature plastic envelopes intended for application in thick and thin-film circuits. They are intended for use in telephony and general industrial applications.
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BSR30
BSR30
BSR33
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ZBF579
Abstract: No abstract text available
Text: ZBF569 ZBF579 SOT23 PNP SILICON PLANAR R.F. TRANSISTORS FEATURES. * HIGH fr UP TO 2.4GHz. * LOW NOISE <3.3dB AT 500MHz PARTMARKING DETAILS ZBF569 - F69 ZBF579 - F79 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL ZBF569 ZBF579 UNIT Collector-Base Voltage VcBO 35
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ZBF569
ZBF579
500MHz
ZBF579
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BO677
Abstract: transistor BD 677 bo679 B0677 BD677 thermal d242 BD 677 BC 677 Q62702-D240 Q62702-D242
Text: ESC D • 023SbOS 0004315 b ■ S I E G NPN Silicon Darlington Transistors SIEMENS A K T I E N G E SE LL SC H AF Î5 C T-33-29 °*3 9 5 ~ BO 675 BD 677 BD 679 D Epibase power darlington transistors 40 W BD 675, BD 677, and BD 679 are monolithic NPN silicon epibase power darlington
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023SbOS
T-33-29
BD676,
BD677
a23Sb0S
ooo43Ra
BD675
AKTIENGESELLSCHAF-BD679
BD67S,
BO677
transistor BD 677
bo679
B0677
BD677
thermal d242
BD 677
BC 677
Q62702-D240
Q62702-D242
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n6532
Abstract: No abstract text available
Text: 3Ö750Ö1 DQ17HS3 0 | } .u arn n g io n P o w e r Transistors File Number 873 2N6530, 2N6531, 2N6532, 2N6533 8-Ampere N-P-N Darlington Power Transistors 80, 100, 120 Volts, 60 Watts Gain of 1000 at 5 A 2N 6530, 2N 6532 Gain of 1000 at 3 A (2N 6533) Gain of 500 at 3 A (2 N 6 5 3 1 )
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DQ17HS3
2N6530,
2N6531,
2N6532,
2N6533
-220AB
RCA-2N6530,
P60I9
n6532
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