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    TS 3110 TRANSISTOR Search Results

    TS 3110 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    TS 3110 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ericsson 800 filter

    Abstract: No abstract text available
    Text: PKV 3000 I – PKV 5000 I DC/ DC Power Modules 1.65 – 3 W PKV 3000 I – PKV 5000 I • Wide input voltage range, 9–36 V, 18–72 V • High efficiency 74–83% typical • Low idling power • Full output power up to +75 °C ambient temperature • Input/Output isolation 1,500 Vdc


    Original     		PDF 48/60V SE-141 ericsson 800 filter

    r2 137

    Abstract: pkv 3325 PKV 5321 ericsson 800 filter
    Text: PKV 3000 I – PKV 5000 I DC/DC Power Modules 1.65 – 3 W PKV 3000 I – PKV 5000 I • Wide input voltage range, 9–36 V, 18–72 V • High efficiency 74–83% typical • Low idling power • Full output power up to +75 °C ambient temperature • Input/Output isolation 1,500 Vdc


    Original     		PDF SE-164 r2 137 pkv 3325 PKV 5321 ericsson 800 filter

    MOD 2453

    Abstract: PKV 5321 DC20
    Text: PKV 3000 I – PKV 5000 I DC/DC converter Input 9-36 and 18-72 Vdc Output up to 0.5A/3W Key Features • Industry standard DIL24 • Wide input voltage range, 9–36 V, 18–72 V • High efficiency 74–83% typical • Low idling power • Full output power up to +75 °C ambient temperature


    Original     		PDF DIL24 48/60V SE-126 MOD 2453 PKV 5321 DC20

    ericsson 800 filter

    Abstract: No abstract text available
    Text: PKV 3000 I – PKV 5000 I DC/DC converter Input 9-36 and 18-72 Vdc Output up to 0.5A/3W Key Features • Industry standard DIL24 • Wide input voltage range, 9–36 V, 18–72 V • High efficiency 74–83% typical • Low idling power • Full output power up to +75 °C ambient temperature


    Original     		PDF DIL24 48/60V SE-141 ericsson 800 filter

    ericsson 800 filter

    Abstract: No abstract text available
    Text: PKV 3000 I – PKV 5000 I DC/DC converter Input 9-36 and 18-72 Vdc Output up to 0.5A/3W Key Features • Industry standard DIL24 • Wide input voltage range, 9–36 V, 18–72 V • High efficiency 74–83% typical • Low idling power • Full output power up to +75 °C ambient temperature


    Original     		PDF DIL24 48/60V SE-126 ericsson 800 filter

    MOD 2453

    Abstract: DC20
    Text: PKV 3000 I – PKV 5000 I DC/DC converter Input 9-36 and 18-72 Vdc Output up to 0.5A/3W Key Features • Industry standard DIL24 • Wide input voltage range, 9–36 V, 18–72 V • High efficiency 74–83% typical • Low idling power • Full output power up to +75 °C ambient temperature


    Original     		PDF DIL24 48/60V SE-126 MOD 2453 DC20

    ericsson 800 filter

    Abstract: No abstract text available
    Text: PKV 3000 I – PKV 5000 I DC/DC converter Input 9-36 and 18-72 Vdc Output up to 0.5A/3W Key Features • Industry standard DIL24 • Wide input voltage range, 9–36 V, 18–72 V • High efficiency 74–83% typical • Low idling power • Full output power up to +75 °C ambient temperature


    Original     		PDF DIL24 48/60V SE-126 ericsson 800 filter

    DC20

    Abstract: No abstract text available
    Text: PKV 3000 I – PKV 5000 I DC/DC converter Input 9-36 and 18-72 Vdc Output up to 0.5A/3W Key Features • Industry standard DIL24 • Wide input voltage range, 9–36 V, 18–72 V • High efficiency 74–83% typical • Low idling power • Full output power up to +75 °C ambient temperature


    Original     		PDF DIL24 48/60V SE-126 DC20

    2N3107

    Abstract: N3107 2n3110 TS37 2N311
    Text: 30 E D • 7=^537 0031157 ê SGS-THOMSON ^□OML| ï[R] g [MDOi T '3 S -1 < Ì 2N3107/2N3108 2N3109/2N3110 S G S-TH 0 MS 0 N GENERAL PURPOSE AMPLIFIERS AND SWITCHES D ESCRIPTIO N The 2N3107, 2N3108, 2N3109 and 2N3110 are silicon planar epitaxial NPN transistors in Jedec


    OCR Scan     		PDF 2N3107/2N3108 2N3109/2N3110 2N3107, 2N3108, 2N3109 2N3110 T-35-19 2N3107 N3107 TS37 2N311

    PU4410

    Abstract: PU3110 PU3111 PU3210 PU4110 PU4111 PU4210 PU4411 PU4510 ic003
    Text: Power Transistor Arrays PU3110, PU4110, PU4410 PU3110, PU4110, PU4410 Package D im ensions PU 3110 Silicon N PN Triple-Diffused Planar Type \P o w e r Am plifier, Switching Com plem entary Pair with PU3210, PU4210, PU4510 • Features • High DC current gain htE and good linearity


    OCR Scan     		PDF PU3110, PU4110, PU4410 PU3210, PU4210, PU4510 PU3110 PU4410 PU3110 PU3111 PU3210 PU4110 PU4111 PU4210 PU4411 PU4510 ic003

    t3d 66

    Abstract: T3D 22, ts 3110 TRANSISTOR T3D 55 T3D 85 T3d 22 T3D 65 T3D 45 t3d 18 2N3906
    Text: A L L E GR O M I C R O S Y S T E M S INC T3D D • 0 S Q 4 3 3 A D D D 3 7 1 7 2 ■ ALGR PROCESS SMN Process SMN PNP High-Speed Switching Transistor Process SM N is a P N P double-diffused silicon epi­ taxial planar transistor with gold diffusion. It is pri­


    OCR Scan     		PDF 0SGM33Ã G3717 050433fl 00371A t3d 66 T3D 22, ts 3110 TRANSISTOR T3D 55 T3D 85 T3d 22 T3D 65 T3D 45 t3d 18 2N3906

    PU3110

    Abstract: PU3111 PU3210 PU4110 PU4111 PU4210 PU4410 PU4411 PU4510
    Text: Power Transistor Arrays PU3110, PU4110, PU4410 PU3110, PU4110, PU4410 Package Dim ensions PU3110 Silicon NPN Triple-Diffused Planar Type 20 .5 ma x. \ P o w e r Am plifier, Switching C om plem entary Pair with P U 3 21 0, P U 4 2 1 0 , P U 4 5 1 0 dwpnr I


    OCR Scan     		PDF PU3110, PU4110, PU4410 PU3210, PU4210, PU4510 PU3110: PU3110 PU3111 PU3210 PU4110 PU4111 PU4210 PU4410 PU4411 PU4510

    2SA711

    Abstract: NE66912 TIS90 2SA711(KE) NE71100 NE71111 S21E NE711 08/bup 3110 transistor
    Text: NEC/ CALIFORNIA b4 2?m M QDQ2M55 QS4 HINECC 5bE D T -3 \-n SEC PNP SILICON HIGH SPEED SWITCHING TRANSISTOR NE71100 NE71111 FEATURES DESCRIPTION AND APPLICATIONS • H IG H G AIN B A NDW IDTH P R O D U C T fr = 1.0 GHz The NE711 series of PNP silicon transistors is designed for HF


    OCR Scan     		PDF b427mM QDQ2M55 NE71100 NE71111 NE711 2SA711 NE66912 TIS90 2SA711(KE) NE71111 S21E 08/bup 3110 transistor

    IC TA 31101

    Abstract: pa 2030a equivalent pa 2030a FC102 ts 3110 TRANSISTOR 2SC4211 C-03 DDD744S 08/bup 3110 transistor
    Text: SANYO SEMICONDUCTOR CORP 55E D 7 EH707fci Q D 0 7 M 4 D Q T - Z 7 -Ö 7 FC102 # NPN Epitaxial Planar Silicon Com posite Transistor 2067 Low-Frequency General-Purpose Amp, Differential Amp Applications 3110 F eatu res •Composite type with 2 transistors contained in the CP package currently in use, im proving the


    OCR Scan     		PDF 00Q7M40 FC102 FC102 2SC4211, IC TA 31101 pa 2030a equivalent pa 2030a ts 3110 TRANSISTOR 2SC4211 C-03 DDD744S 08/bup 3110 transistor

    ts 3110 TRANSISTOR

    Abstract: No abstract text available
    Text: "íb ;MOTOROLA SC -CXSTRS/R F> 6367254 M OT O R O L A S C CXSTRS/R 96D D 82045 . ;_T - i r - Sym bol Value Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage v CBO 60 Vdc Emitter-Base Voltage v EBO 6.0 Vdc >C 600 mAdc Sym bol M ax Unit Pd


    OCR Scan     		PDF MMBT4401 OT-23 O-236AA/AB) ts 3110 TRANSISTOR

    X328 transistor

    Abstract: scx6206 transistor x328 SCX6218 SCX6225 MEA 2901 x328 SCX6244 scx6232 SM8250A
    Text: WjWM National /¡/m Semiconductor mUm Corporation Description of Gate Arrays and Standard Cells National Semiconductor’s CMOS Gate Arrays and Standard Cells utilize a dual layer metal technology microCMOS to achieve operating speeds similar to Schottky-TTL integrat­


    OCR Scan     		PDF 128x8 SM8250A SM8250B 250A/16450 8250-B/8250J-B SM2901 SM2909 SM2911 0Q72122 X328 transistor scx6206 transistor x328 SCX6218 SCX6225 MEA 2901 x328 SCX6244 scx6232

    08/bup 3110 transistor

    Abstract: No abstract text available
    Text: GENNUM C O R P O R A T I O F M GX4201 Wideband, Monolithic 1x1 Video Crosspoint Switch DATA SHEET FEATURES CIRCUIT DESCRIPTION • -3 dB bandwidth, 300 MHz with CL = 0 pF TheGX4201 is a w ideb and 1x1 video cro sspoint im plem ented in bip o la r m onolithic tech nolog y. The d e vice is cha racte rized


    OCR Scan     		PDF GX4201 TheGX4201 800MHz. 1989Gennum 08/bup 3110 transistor

    2n6277

    Abstract: ts 3110 TRANSISTOR itt500 2N6274 transistor 6277 08/bup 3110 transistor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA H ig h -P o w e r NPN S ilicon T ran sisto rs 2N 6274 2N 6275 2N 6277* . . . designed for use In Industrial-military power amplifer and switching circuit applications. *Motorola Prtf*rr»d 0*v1c* • High Collector Emitter Sustaining —


    OCR Scan     		PDF 2N6274 2N6275 2N6277 2N6377-7uration 2n6277 ts 3110 TRANSISTOR itt500 2N6274 transistor 6277 08/bup 3110 transistor

    AM31L01

    Abstract: AM31L01PC
    Text: Am 31L01/31L01A 64-Bit Low Power Write Transparent, Inverting Output, Bipolar RAM • • • Standard version: Address access time 50 ns Low power: Ic c typically 75 mA Internal ECL circuitry lor optimum speed/power perfor­ mance over voltage and temperature


    OCR Scan     		PDF Am31L01/31L01A 64-Bit 16-word L01/31L01A MIL-STD-883, AM31L01 AM31L01PC

    army sc-c-179495

    Abstract: 2N426 2N428 germanium transistor ac 127 STT 433
    Text: MIL-S-19500/44D •lEJter sh 1970 SUPERSEDING MIL-S-19500/44C 9 April 1962 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, LOW-POWER TYPE 2N428 This specification is mandatory fo r use by all De­ partments and Agencies o f the Department o f Defense.


    OCR Scan     		PDF MIL-S-19500/44D MIL-S-19500/44C 2N428 000-hour MIL-S-19500, MIL-S-19500 army sc-c-179495 2N426 2N428 germanium transistor ac 127 STT 433

    AM31L01

    Abstract: AM31L01APC 31L01
    Text: Am31L01/31L01A 64-Bit Low Power Write Transparent, Inverting Output, Bipolar RAM • • • Standard version: Address access time 50 ns Low power: Icc typically 75 mA Internal ECL circuitry lor optimum speed/power perfor­ mance over voltage and temperature


    OCR Scan     		PDF Am31L01/31L01A 64-Bit 16-word MIL-STD-883, AM31L01 AM31L01APC 31L01

    intel 3101

    Abstract: 3101AS
    Text: in y Fast Access Time — 35 nsec max over 0-75°C Temperature Range 3101 A > : • OR-Tie Capability — {Open Collector^ Outputs ■ Fully Decoded — on Chip Address Decode and Buffer Simple Memory Expansion through Chip Select Input — 17 nsec max over


    OCR Scan     		PDF

    31L01

    Abstract: No abstract text available
    Text: Am31L01 / 31L01A 64-Blt Low Power Write Transparent, Inverting Output, Bipolar R A M AIÏ131L01/31L01A DISTINCTIVE CH A R ACT ER IST IC S Standard version: A ddress access time SO n s Low power: Ic e typically 75 mA Internal ECU circuitry for optimum speed/power perfor­


    OCR Scan     		PDF Am31L01 31L01A 64-Blt 131L01/31L01A 16-word 31L01/31L01A 64-bit MIL-STD-883, 31L01

    2SK608

    Abstract: D717Y 2SC4894 2sk1216 C3967 2SC3967 2sk316 MA151WK 2sk123 2sc4238
    Text: Mini Type 3-pin Package ì~ m (3 Transistors, Diodes • $ i m 5 - ä Ü ( 3 ä * :f - ) A - y ' i r - v l i . 7 ^ - v T \ / * y 4- - • jJ W t t i ;:* * * 8 mmx - 'J 'ä a S iÄ S W ^ 'J * - fc « 2 H Ô U 4 f f i H R • U nit ! aim V T t K ^ trÆ > h S të Ü


    OCR Scan     		PDF A721W MA3000- 2SK608 D717Y 2SC4894 2sk1216 C3967 2SC3967 2sk316 MA151WK 2sk123 2sc4238