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    TSD1130 Search Results

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    TSD1130 Price and Stock

    Daniels Manufacturing Corporation (DMC) TSD1130

    Punches & Dies UNIVERSAL DIE ASSEMBLY -.121"-.130"CABLE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics TSD1130
    • 1 $428.15
    • 10 $404.42
    • 100 $404.42
    • 1000 $404.42
    • 10000 $404.42
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    TSD1130 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MMBFJ174

    Abstract: P1087 MMBF5115 2N5019 J176 2N5018 2N5115 2N5116 J174 MMBF5114
    Text: bflE D N ATL tSD1130 003^501 TDS • NSCS SE„ IC0N] JIS C r e t e ) P C hannel Vp@VDSlD RoS(on) ( a ) @ iD bvgss Device (V) (V) Min Min Ciss (PF) Max Crss (PF) Max ton (ns) Max toff (ns) Max Package (V) (nA) Min (mA) 10 -1 5 1000 75 1 45 10 35 65 T 0 -18(11)


    OCR Scan     		PDF 2N5018 2N5019 MMBF5114 O-236* 2N5115 MMBF5115 2N5116 MMBF5116 MMBFJ174 P1087 J176 J174

    CMD8

    Abstract: No abstract text available
    Text: IRF232 IRF233 IRF630 By IRF631 Its IRF632 IRF633 2N6759 IRF330 IRF331 IRF333 IRF730 IRF731 Nola1: Non-JEDEC registered valua. lD@ = 25°C Tc 'ro = 100°C VGS th Id e(mA) (V) Min Max R[)S(oo) • d (ft) e (A) (nC) Max Ch. <PF) Con <PF) CtM Proc. Max (PF)


    OCR Scan     		PDF DD3711b T-39-01 CMD8

    DIODE 3L2

    Abstract: Complementary MOSFET Half Bridge
    Text: e? National February 1996 Semiconductor' NPS8852H Complementary MOSFET Half Bridge Features General Description These Complementary M O SFE T half bridge devices are produced using National's proprietary, high cell density, D M O S technology. This very high density process is especially tailored to


    OCR Scan     		PDF NPS8852H b5D113Q DIODE 3L2 Complementary MOSFET Half Bridge

    BC547 surface mount

    Abstract: BC548 T0-92 bc857 to92 MPSA18 BC547 bc856 to 92 T0-9297 bc857 to 92 TIS97
    Text: Low Noise Amplifiers t.3E D Min Max mA MHz Min BC546 110 450 2 10 300 Typ T0-92(97) 1,2C BC846 110 0.01 10 300 Typ TO-236* 1,2C PNP NPN Package Notes 2 BC556 75 475 2 10 300 Typ TO-92(97) 1,2C BC856 125 475 2 10 300 Typ TO-236* 1,2C 2N2484 100 500 0.01 3


    OCR Scan     		PDF tSD1130 BC546 BC846 T0-92 O-236* BC556 BC856 N3962 PN4249 PN4250A BC547 surface mount BC548 bc857 to92 MPSA18 BC547 bc856 to 92 T0-9297 bc857 to 92 TIS97

    NDH831N

    Abstract: No abstract text available
    Text: National Semiconductor~ July 1 9 9 6 NDH831N N-Channef Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.


    OCR Scan     		PDF NDH831N 125-C bSD1130 NDH831N