MMBFJ174
Abstract: P1087 MMBF5115 2N5019 J176 2N5018 2N5115 2N5116 J174 MMBF5114
Text: bflE D N ATL tSD1130 003^501 TDS • NSCS SE„ IC0N] JIS C r e t e ) P C hannel Vp@VDSlD RoS(on) ( a ) @ iD bvgss Device (V) (V) Min Min Ciss (PF) Max Crss (PF) Max ton (ns) Max toff (ns) Max Package (V) (nA) Min (mA) 10 -1 5 1000 75 1 45 10 35 65 T 0 -18(11)
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2N5018
2N5019
MMBF5114
O-236*
2N5115
MMBF5115
2N5116
MMBF5116
MMBFJ174
P1087
J176
J174
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CMD8
Abstract: No abstract text available
Text: IRF232 IRF233 IRF630 By IRF631 Its IRF632 IRF633 2N6759 IRF330 IRF331 IRF333 IRF730 IRF731 Nola1: Non-JEDEC registered valua. lD@ = 25°C Tc 'ro = 100°C VGS th Id e(mA) (V) Min Max R[)S(oo) • d (ft) e (A) (nC) Max Ch. <PF) Con <PF) CtM Proc. Max (PF)
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DD3711b
T-39-01
CMD8
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DIODE 3L2
Abstract: Complementary MOSFET Half Bridge
Text: e? National February 1996 Semiconductor' NPS8852H Complementary MOSFET Half Bridge Features General Description These Complementary M O SFE T half bridge devices are produced using National's proprietary, high cell density, D M O S technology. This very high density process is especially tailored to
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NPS8852H
b5D113Q
DIODE 3L2
Complementary MOSFET Half Bridge
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BC547 surface mount
Abstract: BC548 T0-92 bc857 to92 MPSA18 BC547 bc856 to 92 T0-9297 bc857 to 92 TIS97
Text: Low Noise Amplifiers t.3E D Min Max mA MHz Min BC546 110 450 2 10 300 Typ T0-92(97) 1,2C BC846 110 0.01 10 300 Typ TO-236* 1,2C PNP NPN Package Notes 2 BC556 75 475 2 10 300 Typ TO-92(97) 1,2C BC856 125 475 2 10 300 Typ TO-236* 1,2C 2N2484 100 500 0.01 3
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tSD1130
BC546
BC846
T0-92
O-236*
BC556
BC856
N3962
PN4249
PN4250A
BC547 surface mount
BC548
bc857 to92
MPSA18 BC547
bc856 to 92
T0-9297
bc857 to 92
TIS97
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NDH831N
Abstract: No abstract text available
Text: National Semiconductor~ July 1 9 9 6 NDH831N N-Channef Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.
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NDH831N
125-C
bSD1130
NDH831N
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