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    TSM345 Search Results

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    TSM345 Price and Stock

    Taiwan Semiconductor TSM3457CX6-RFG

    MOSFET P-CHANNEL 30V 5A SOT26
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    DigiKey TSM3457CX6-RFG Digi-Reel 11,612 1
    • 1 $0.66
    • 10 $0.44
    • 100 $0.66
    • 1000 $0.21539
    • 10000 $0.21539
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    TSM3457CX6-RFG Cut Tape 11,612 1
    • 1 $0.66
    • 10 $0.44
    • 100 $0.66
    • 1000 $0.21539
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    TSM3457CX6-RFG Reel 9,000 3,000
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    • 10000 $0.18827
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    Taiwan Semiconductor TSM3457CX6

    -30V, -5A, SINGLE P-CHANNEL POWE
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    DigiKey TSM3457CX6 Reel 12,000
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    Mouser Electronics TSM3457CX6
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    Taiwan Semiconductor TSM3457CX6 RFG

    Transistor MOSFET P-CH -30V -5A 6-Pin SOT-26 Plastic T/R - Tape and Reel (Alt: TSM3457CX6 RFG)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas TSM3457CX6 RFG Reel 16 Weeks 42,000
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    Mouser Electronics TSM3457CX6 RFG 134
    • 1 $0.86
    • 10 $0.533
    • 100 $0.346
    • 1000 $0.227
    • 10000 $0.162
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    Verical TSM3457CX6 RFG 24,000 3,000
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    EBV Elektronik TSM3457CX6 RFG 32 Weeks 3,000
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    New Advantage Corporation TSM3457CX6 RFG 33,000 1
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    Others TSM3455CX6

    AVAILABLE EU
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    ComSIT USA TSM3455CX6 12,000
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    Others TSM3454CX6

    AVAILABLE EU
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    ComSIT USA TSM3454CX6 15,000
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    TSM345 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TSM3457 Taiwan Semiconductor 30V P-Channel MOSFET Original PDF
    TSM3457CX6RF Taiwan Semiconductor 30V P-Channel MOSFET Original PDF
    TSM3457CX6 RFG Taiwan Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CHANNEL 30V 5A SOT26 Original PDF

    TSM345 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TSM3458

    Abstract: sot26 pa N-Channel mosfet sot-26
    Text: TSM3458 60V N-Channel MOSFET SOT-26 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source 60 Features ID (A) 100 @ VGS = 10V 3.2 130 @ VGS = 4.5V 2.8 Block Diagram ● Advance Trench Process Technology ●


    Original     		PDF TSM3458 OT-26 TSM3458CX6 TSM3458 sot26 pa N-Channel mosfet sot-26

    TSM3457

    Abstract: MARKING 952 SOT marking pa sot-26
    Text: TSM3457 30V P-Channel MOSFET SOT-26 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source -30 Features ID (A) 54 @ VGS = 10V -5 100 @ VGS = 4.5V -3.7 Block Diagram ● Advance Trench Process Technology ●


    Original     		PDF TSM3457 OT-26 TSM3457CX6 TSM3457 MARKING 952 SOT marking pa sot-26

    Untitled

    Abstract: No abstract text available
    Text: TSM3455 30V P-Channel MOSFET SOT-26 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source -30 Features ID (A) 100 @ VGS = -10V -3.5 170 @ VGS = -4.5V -2.7 Block Diagram ● Advance Trench Process Technology


    Original     		PDF TSM3455 OT-26 TSM3455CX6

    Untitled

    Abstract: No abstract text available
    Text: TSM3454 30V N-Channel MOSFET SOT-26 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source 30 Features ID (A) 60 @ VGS = 10V 4.5 85 @ VGS = 4.5V 3.8 Block Diagram ● Advance Trench Process Technology ●


    Original     		PDF TSM3454 OT-26 TSM3454CX6

    TSM3457CX6 RF

    Abstract: tsm3457cx6
    Text: TSM3457 30V P-Channel MOSFET SOT-26 PRODUCT SUMMARY VDS V RDS(on)(m) Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source -30 Features ID (A) 60 @ VGS = 10V -5 100 @ VGS = 4.5V -3.7 Block Diagram  Advance Trench Process Technology  High Density Cell Design for Ultra Low On-resistance


    Original     		PDF TSM3457 OT-26 TSM3457CX6 TSM3457CX6 RF

    TSM3457

    Abstract: p-CHANNEL MOSFET
    Text: TSM3457 30V P-Channel MOSFET SOT-26 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source -30 Features ID (A) 60 @ VGS = 10V -5 100 @ VGS = 4.5V -3.7 Block Diagram ● Advance Trench Process Technology ●


    Original     		PDF TSM3457 OT-26 TSM3457CX6 TSM3457 p-CHANNEL MOSFET

    TSM3459

    Abstract: TSM34
    Text: TSM3459 60V P-Channel MOSFET SOT-26 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source -60 Features ID (A) 220 @ VGS = -10V -2.2 310 @ VGS = -4.5V -1.9 Block Diagram ● Advance Trench Process Technology


    Original     		PDF TSM3459 OT-26 TSM3459CX6 TSM3459 TSM34

    Untitled

    Abstract: No abstract text available
    Text: TSM3457A 30V P-Channel MOSFET SOT-26 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source -30 Features ID (A) 54 @ VGS = 10V -5 100 @ VGS = 4.5V -3.7 Block Diagram ● Advance Trench Process Technology


    Original     		PDF TSM3457A OT-26 TSM3457ACX6

    Untitled

    Abstract: No abstract text available
    Text: TAIW AN s TSM3454 SEMICONDUCTOR 30V N-Channel MOSFET bl RoHS CO M PLIANCE SOT-26 65 4 PRODUCT SUMMARY Pin Definition: 1. Drain 6. Drain 2. Drain 5. Drain 3. Gate 4. Source V ds {V 30 1 23 Features RDS on)(m£2) Id (A) 60 @ VGS= 10V 4.5 85 @ Vcs= 4.5V 3.6


    OCR Scan     		PDF TSM3454 OT-26 TSM3454CX6

    BL SOT26

    Abstract: No abstract text available
    Text: TAIW AN s TSM3454 SEMICONDUCTOR 30V N-Channei MOSFET b RoHS COMPLIANCE SOT-26 654 PRODUCT SU MMARY Pin Definition: 1. Drain 6. Drain 2. Drain 5. Drain 3. Gate 4. Source Vos {V) Id RDS on)(m£2) (A) 60 @ VGS= 10V 4.5 85 @ Vos = 4 .5 V 3.6 30 1 23 Features


    OCR Scan     		PDF TSM3454 OT-26 TSM3454CX6 BL SOT26

    Untitled

    Abstract: No abstract text available
    Text: TAIWAN SEMICONDUCTOR s TSM3455 30V P-Channel MOSFET bl RoHS CO M PLIANCE SO T-26 654 PRODUCT SUM M ARY Pin Definition; 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source V DS V R Ds(on)(mQ) b (A) 100 @ Vcs = -10V -3.5 170 @ VGS= -4.5V -2.7 -30 1 23 Features


    OCR Scan     		PDF TSM3455 3455C

    TSM3454CX6

    Abstract: TSM3454 MARKING SO SOT26
    Text: E TAIW AN pb RoHS TSM3454 S E M IC O N D U C T O R 30V N-Channei MOSFET C O M P L IA N C E SOT-26 854 PRODUCT SU M M AR Y Pin Definition: 1. D ra in 2. D ra in 6. D ra in 5. D ra in 3. Gate 4. Source V ds {V) RDS(on)(m£2) I d (A) 60 @ VGS= 10V 4.5 85 @ V cs= 4.5V


    OCR Scan     		PDF TSM3454 OT-26 TSM3454CX6 OT-26 TSM3454 MARKING SO SOT26

    tsm3455

    Abstract: No abstract text available
    Text: s TAIW AN TSM3455 SEMICONDUCTOR 30V P-Channel MOSFET b RoHS CO M PLIANCE SO T-26 654 PRODUCT SUM M ARY Pin Definition; 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source V DS V) R Ds(on)(mQ) b (A) 100 @ Vcs = -10V -3.5 1 70 @ VGS = -4.5V -2.7 -30 1 23


    OCR Scan     		PDF TSM3455 3455C tsm3455

    marking 2U diode

    Abstract: TSM3455CX6 marking 2U 20 diode IR P-Channel mosfet TSM345 diode marking code 2U M3455 P-channel power mosfet 30V tsm3455
    Text: E TAIW AN pb RoHS TSM3455 S E M IC O N D U C T O R 30V P-Channei MOSFET CO M PLIANCE PRODUCT SUM M ARY Pin Definition; 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source V DS (V) R Ds(on)(mQ) b (A) 100 @ Vcs = -10V -3.5 1 70 @ VGS = -4.5V -2.7 -30 1 23


    OCR Scan     		PDF M3455 OT-26 TSM3455CX6 OT-26 marking 2U diode marking 2U 20 diode IR P-Channel mosfet TSM345 diode marking code 2U M3455 P-channel power mosfet 30V tsm3455