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    TSOP 44 NAND FLASH Search Results

    TSOP 44 NAND FLASH Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MD28F010-20/B Rochester Electronics LLC Flash Visit Rochester Electronics LLC Buy
    54H30J Rochester Electronics LLC NAND Gate Visit Rochester Electronics LLC Buy
    DM74LS22J Rochester Electronics LLC DM74LS22 - NAND Logic Gate Visit Rochester Electronics LLC Buy
    54H30J/C Rochester Electronics LLC 54H30 - NAND Gate Visit Rochester Electronics LLC Buy
    946HM/C Rochester Electronics LLC 946 - NAND Gate Visit Rochester Electronics LLC Buy

    TSOP 44 NAND FLASH Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TC58DVG14B1FT00

    Abstract: TC58NVG2D4BFT00 toshiba NAND Flash MLC TH58NVG*D Sandisk TSOP TH58NVG3D4BFT00 toshiba TH58NVG*D circuit de commande de carte de puissance microcontroleur Toshiba MLC flash
    Text: Toshiba fait passer les mémoires flash NAND au stade des 4 gigabits Des mémoires flash de 8 gigabits sont également disponibles grâce à l'empilage de ces nouvelles mémoires 4 gigabits Renforçant son leadership en matière de développement et fabrication de mémoires flash NAND puissantes de grande capacité,


    Original     		PDF D-40549 5518/A TC58DVG14B1FT00 TC58NVG2D4BFT00 toshiba NAND Flash MLC TH58NVG*D Sandisk TSOP TH58NVG3D4BFT00 toshiba TH58NVG*D circuit de commande de carte de puissance microcontroleur Toshiba MLC flash

    NAND512W3A 64MB

    Abstract: STMicroelectronics NAND256W3A VFBGA63 NAND08GW3B USOP48 NAND256W3A F70 Package NAND01GW3B tfbga NAND01GR3B
    Text: NAND Flash memories The core element of a compact audio-player is a NAND Flash, smaller than a stamp, which is capable of storing hours of audio files Because NAND Flash offers higher densities and performances at lower cost, it is ideal for multimedia system


    Original     		PDF FLNANDF0106 NAND512W3A 64MB STMicroelectronics NAND256W3A VFBGA63 NAND08GW3B USOP48 NAND256W3A F70 Package NAND01GW3B tfbga NAND01GR3B

    MT29F2G16A

    Abstract: micron marking code information MT29 NAND Micron MT29F2G08A micron ecc nand TSOP 44 Package nand memory TSOP 48 Package nand memory MT29Fxx08x
    Text: 2Gb x16/x8, NAND Flash Memory Features NAND Flash Memory MT29F2G08AAxxx / MT29F2G16AAxxx This document provides a high-level overview of the Micron 2Gb NAND device. To obtain product data sheets or technical notes, please contact your Micron sales person, or visit: www.micron.com/sales


    Original     		PDF x16/x8, MT29F2G08AAxxx MT29F2G16AAxxx 2Gb2048 09005aef817bd2fe/Source: 09005aef817bd429 MT29F2G16A micron marking code information MT29 NAND Micron MT29F2G08A micron ecc nand TSOP 44 Package nand memory TSOP 48 Package nand memory MT29Fxx08x

    KS32P6632

    Abstract: NAND FLASH 64MB sample code read and write flash memory PCMCIA FLASH CARD 10MB TSOP 14X20 lexar cf 64mb controller Datasheet toshiba NAND Flash MLC vending machine source code pcmcia flash memory 8MB ata VG365
    Text: Mass Storage Application Memory Product & Technology Division 2000.03.15 Product Planning & Application Engineering The Leader in Memory Technology ELECTRONICS Mass MassStorage StorageApplication ApplicationArea Area Flash Card Small Form Factor Card PCMCIA Card Form Factor


    Original     		PDF 056KB KS32P6632 NAND FLASH 64MB sample code read and write flash memory PCMCIA FLASH CARD 10MB TSOP 14X20 lexar cf 64mb controller Datasheet toshiba NAND Flash MLC vending machine source code pcmcia flash memory 8MB ata VG365

    KM29W32000ATS

    Abstract: No abstract text available
    Text: KM29W32000ATS Advance Information FLASH MEMORY Document Title 4M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 Initial issue. Draft Date Remark April 10th 1998 Advance The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right


    Original     		PDF KM29W32000ATS KM29W32000ATS

    K8D3216UBC-pi07

    Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
    Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM


    Original     		PDF BR-05-ALL-002 K8D3216UBC-pi07 K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm

    KS32P6632

    Abstract: NAND FLASH 64MB samsung nand flash schematics nand flash controller nand flash memory reader flashdisk nand flash samsung nand S3P4909XZZ Samsung nand flash 64mb
    Text: Samsung’s ATA NAND Flash Controllers User’s Manual Rev. 0.1 2000-06-26 Ko Young Wi Revision History Revision No. 0.0 0.1 History Initial issue KS32P6632-TX - Flash Component Supported Max. : 20ea à 10ea - Densities Supported (Min. / Max.) : 4MB / 640MB à 4MB / 320MB


    Original     		PDF KS32P6632-TX 640MB 320MB 256Mb KS32P6632 NAND FLASH 64MB samsung nand flash schematics nand flash controller nand flash memory reader flashdisk nand flash samsung nand S3P4909XZZ Samsung nand flash 64mb

    electronique package

    Abstract: electronique cdx3 fujitsu Flash Memory Miniature Card AMD PCMCIA linear Flash Memory Card 2M - FLASH PCMCIA linear card MB98A81183-15 1M - FLASH PCMCIA linear card PCMCIA SRAM Memory Card 512k 5v eeprom Memory 32Mbit
    Text: FLASH OVERVIEW 16 18/9/98 4:12 pm Page 1 PRODUCT OVERVIEW FLASH MEMORY Fujitsu Flash Memories The Complete Package FLASH OVERVIEW 16 18/9/98 4:12 pm Page 2 Flash Memory Copyright 1998 Fujitsu Limited Tokyo, Japan, Fujitsu Mikroelektronik GmbH, Fujitsu Microelectronics Ltd and Fujitsu


    Original     		PDF D-85737 S-19268 FEDE-FLASH-0998 electronique package electronique cdx3 fujitsu Flash Memory Miniature Card AMD PCMCIA linear Flash Memory Card 2M - FLASH PCMCIA linear card MB98A81183-15 1M - FLASH PCMCIA linear card PCMCIA SRAM Memory Card 512k 5v eeprom Memory 32Mbit

    toshiba toggle mode nand

    Abstract: TC518128 TC518129 TC551001 equivalent 551664 TC518512 sgs-thomson power supply Toggle DDR NAND flash jeida 38 norm APPLE A5 CHIP
    Text: DRAM Technology n TOSHIBA DRAM TECHNOLOGY Toshiba DRAM Technology 2 DRAM Technology n DRAM TECHNOLOGY TRENDS Density Design Rule 64M→128M →256M →512M →1G 0.35µm →0.25 µm →0.20 µm →0.175 µm Cost Down, Yield Improvement High Bandwidth Multi - bit


    Original     		PDF 64M128M 66MHz 100MHz 200MHz) 500/600MHz 800MHz 400MHz 800MHz) X16/X18X32 PhotoPC550 toshiba toggle mode nand TC518128 TC518129 TC551001 equivalent 551664 TC518512 sgs-thomson power supply Toggle DDR NAND flash jeida 38 norm APPLE A5 CHIP

    transistor d528

    Abstract: D528 D529 64mb nand flash samsung NAND Flash DIE
    Text: Back Application Note for NAND Flash April 1998 SAMSUNG ELECTRONICS. Sa ms u n g S i l i c o n w a r e NPP - YWK - 98 - Apr 1 TABLE OF CONTENTS 1. INVALID BLOCK S 5. UTILIZING THE DEVICE IN THE SAME SYSTEM DESIGN 1-1. Identifying Invalid Block(s) 5-1. Pin Assignment(4Mb,8Mb,16Mb,


    Original     		PDF 128Mb 256Mb) 256Mb 100pF transistor d528 D528 D529 64mb nand flash samsung NAND Flash DIE

    th50vpf

    Abstract: TH50VPF5783 TC55VEM208ASTN55 th58nvg TC554161AFT-70L TC554161AFT-70 TC55V8512JI-12 TC55VD1636FFI-150 tc58128aft TC58NVG0S3AFT00
    Text: MOS Memories Dynamic RAMs Static RAMs NOR Flash Memories NAND E2PROM Media Card MCPs multi-chip packages z 2 z 3 z 10 z 11 z 12 z 13 1 Dynamic RAMs Fast Cycle RAM (FCRAMTM ) (DDR) Capacity 256 Mbits 288 Mbits Product No. — TC59LM806CFT-50 — TC59LM806CFT-55


    Original     		PDF TC59LM806CFT-50 TC59LM806CFT-55 TC59LM806CFT-60 TC59LM814CFT-50 TC59LM814CFT-55 TC59LM814CFT-60 TC59LM818DMB-30 TC59LM818DMB-33 TC59LM818DMB-40 64M/32M th50vpf TH50VPF5783 TC55VEM208ASTN55 th58nvg TC554161AFT-70L TC554161AFT-70 TC55V8512JI-12 TC55VD1636FFI-150 tc58128aft TC58NVG0S3AFT00

    Micron MT29F8G08

    Abstract: MT29F4G16BABWP Micron NAND MT29F4G16 FLASH MEMORY 29F MICRON 63 MT29FxG08 MT29F2G16AABWP nand 29F MT29F2G08AABWP
    Text: 2, 4, 8Gb: x8/x16 Multiplexed NAND Flash Memory Features NAND Flash Memory MT29F2G08AABWP/MT29F2G16AABWP MT29F4G08BABWP/MT29F4G16BABWP MT29F8G08FABWP Features Figure 1: • Organization: • Page size: x8: 2,112 bytes 2,048 + 64 bytes x16: 1,056 words (1,024 + 32 words)


    Original     		PDF x8/x16 MT29F2G08AABWP/MT29F2G16AABWP MT29F4G08BABWP/MT29F4G16BABWP MT29F8G08FABWP 09005aef818a56a7 09005aef81590bdd Micron MT29F8G08 MT29F4G16BABWP Micron NAND MT29F4G16 FLASH MEMORY 29F MICRON 63 MT29FxG08 MT29F2G16AABWP nand 29F MT29F2G08AABWP

    48-Pin TSOP - Type 1, CPL

    Abstract: SpecTek flash micron nand flash chip 16gb SpecTek nand nand flash 32gb x16 spectek nand flash 8GB-16GB BA12 L41A Micron NAND flash 32gb
    Text: Advance‡ 8Gb, 16Gb, and 32Gb: x8/x16 NAND Flash Memory Features NAND Flash Memory MLC FNNL41A Features Figure 1: 48-Pin TSOP Type 1 • Organization – Page size: x8: 2,112 bytes 2,048 + 64 bytes Block size: 128 pages (256K + 8K bytes) – Device size: 8Gb: 4,096 blocks


    Original     		PDF x8/x16 FNNL41A 48-Pin 48-Pin TSOP - Type 1, CPL SpecTek flash micron nand flash chip 16gb SpecTek nand nand flash 32gb x16 spectek nand flash 8GB-16GB BA12 L41A Micron NAND flash 32gb

    48-Pin TSOP - Type 1, CPL

    Abstract: SpecTek flash SpecTek nand nand flash 32gb x16 SpecTek nand 8 flash chip 8gb Micron NAND flash 32gb L41A nand BA12 FNNL41A
    Text: Advance‡ 8Gb, 16Gb, and 32Gb: x8/x16 NAND Flash Memory Features NAND Flash Memory MLC FNNL41A Features Figure 1: 48-Pin TSOP Type 1 • Organization – Page size: x8: 2,112 bytes 2,048 + 64 bytes Block size: 128 pages (256K + 8K bytes) – Device size: 8Gb: 4,096 blocks


    Original     		PDF x8/x16 FNNL41A 48-Pin 09005aef82b4174b/PDF: 09005aef82af83db 48-Pin TSOP - Type 1, CPL SpecTek flash SpecTek nand nand flash 32gb x16 SpecTek nand 8 flash chip 8gb Micron NAND flash 32gb L41A nand BA12 FNNL41A

    Untitled

    Abstract: No abstract text available
    Text: S3F49FAX for Compact Flash SPECIFICATION Revision 1.0 HELP DESK Sejin, Ahn herlock@sec.samsung.com Sanghun, Song (hoontour@samsung.com) SPECIFICATION S3F49FAX Table of Contents 1.1 1.2 1.3 2.1 2.2


    Original     		PDF S3F49FAX S3F49FAX 100-pin 100-TQFP-1414) 100-TQFP-1414 100-TQFP-1414

    PCMCIA CARD, Static Memory, write protect switch

    Abstract: S3F49FAX "nand flash memory" compact flash DN-12 PCMCIA SRAM Card S3F49FAXZA S3F49FAXZZ NAND Flash memory controller apad diagram
    Text: S3F49FAX for Compact Flash SPECIFICATION Revision 1.0 HELP DESK Sejin, Ahn herlock@sec.samsung.com Sanghun, Song (hoontour@samsung.com) SPECIFICATION S3F49FAX Table of Contents 1.1 1.2 1.3 2.1 2.2 Introduction .2


    Original     		PDF S3F49FAX S3F49FAX 100-pin 100-TQFP-1414) 100-TQFP-1414 100-TQFP-1414 PCMCIA CARD, Static Memory, write protect switch "nand flash memory" compact flash DN-12 PCMCIA SRAM Card S3F49FAXZA S3F49FAXZZ NAND Flash memory controller apad diagram

    DN-12

    Abstract: TSOP RECEIVER 128M NAND Flash Memory compact flash PCMCIA SRAM Card picu S3F49FAX USB Flash Memory SAMSUNG S3F49FAXZA S3F49FAXZZ
    Text: S3F49FAX for Compact Flash SPECIFICATION Revision 1.0 HELP DESK Sejin, Ahn herlock@sec.samsung.com Sanghun, Song (hoontour@samsung.com) SPECIFICATION S3F49FAX Table of Contents 1.1 1.2 1.3 2.1 2.2 Introduction .2


    Original     		PDF S3F49FAX S3F49FAX 100-pin 100-TQFP-1414) 100-TQFP-1414 100-TQFP-1414 DN-12 TSOP RECEIVER 128M NAND Flash Memory compact flash PCMCIA SRAM Card picu USB Flash Memory SAMSUNG S3F49FAXZA S3F49FAXZZ

    SpecTek flash

    Abstract: Micron 512MB nand FLASH SpecTek nand spectek nand flash M2 8gb pinout SpecTek nand 8 M29A 48-PIN 04/SpecTek flash flash chip 8gb
    Text: 512Mb through 8Gb x8/x16 Multiplex NAND Flash Memory NAND Flash Memory Features Figure 1: 48-PIN TSOP Type 1 • FNN Organization: • Page size: x8: 2,112 bytes 2,048 + 64 bytes x16: 1,056 words (1,024 + 32 words) • Block size: 64 pages (128K + 4K bytes)


    Original     		PDF 512Mb x8/x16 48-PIN 09005aef81d3348f 09005aef81d3345f SpecTek flash Micron 512MB nand FLASH SpecTek nand spectek nand flash M2 8gb pinout SpecTek nand 8 M29A 04/SpecTek flash flash chip 8gb

    Untitled

    Abstract: No abstract text available
    Text: 512Mb through 8Gb x8/x16 Multiplex NAND Flash Memory NAND Flash Memory Features Figure 1: 48-PIN TSOP Type 1 • FNN Organization: • Page size: x8: 2,112 bytes 2,048 + 64 bytes x16: 1,056 words (1,024 + 32 words) • Block size: 64 pages (128K + 4K bytes)


    Original     		PDF 512Mb x8/x16 48-PIN See9/05 09005aef81d3348f 09005aef81d3345f

    SpecTek flash

    Abstract: No abstract text available
    Text: 512Mb through 8Gb x8/x16 Multiplex NAND Flash Memory NAND Flash Memory Features Figure 1: 48-PIN TSOP Type 1 • Organization: • Page size: x8: 2,112 bytes 2,048 + 64 bytes x16: 1,056 words (1,024 + 32 words) • Block size: 64 pages (128K + 4K bytes)


    Original     		PDF 512Mb x8/x16 48-PIN 09005aef81d3348f 09005aef81d3345f SpecTek flash

    TSOP 48 Package nand memory

    Abstract: NAND flash memory nor flash 1Mx16 flash TSOP I KM29N040T KM28U800
    Text: 1. INTRODUCTION <NOR FLASH MEMORY> <NAND FLASH MEMORY> 2. PRODUCT GUIDE < NOR FLASH MEMORY > Density Org. Supply 2.7V-3.6V 8M bit 16M bit Part Number KM28U800 Features 2Mx8 1Mx16 4.5V-5.5V KM28N800 55/70/90 2.7V-3.6V KM28U160 80/90/120ns Package Standard Temp.


    OCR Scan     		PDF 512KX 1Mx16 KM28N800 KM28U800 90/100/120ns 48CSP KM28U160 80/90/120ns KM29U128T KM29U128IT TSOP 48 Package nand memory NAND flash memory nor flash 1Mx16 flash TSOP I KM29N040T

    Samsung "NAND Flash" "ordering information"

    Abstract: NOR Flash samsung nor flash samsung memory
    Text: 3. ORDERING INFORMATION NOR FLASH MEMORY Z 3 KM 28 B CCC D E - F GG Access Time SAMSUNG Memory Block Architecture NOR FLASH Operating Voltage Range Package Operating Temperature Range Densitv/Oraanization 1. SAMSUNG Memory 2. NOR Flash 6. Package Type T -G -Z —


    OCR Scan     		PDF 800-------------------8Mbit, x8/x16 16Mbit, 44-Lead 48-CSP 32000---------------32M 128Mbit Samsung "NAND Flash" "ordering information" NOR Flash samsung nor flash samsung memory

    Samsung "NAND Flash" "ordering information"

    Abstract: ICS 3 bad block samsung
    Text: MEMORY ICs FUNCTION GUIDE 3. ORDERING INFORMATION 1 2 3 4 KM 29 A BBBBB 5 6 C D SAMSUNG Memory 7 8 E F Bad Block NAND Flash Package Product Temp Density Revision Revision Blank- 1st Gen. A . 2nd Gen.


    OCR Scan     		PDF 16Mbit 32Mbit Samsung "NAND Flash" "ordering information" ICS 3 bad block samsung

    TC5816FT

    Abstract: TC5332410F TC5316200CP TC531621 TC5310
    Text: CMOS Flash E2PROM Capacity 1MBit flash X6 Max. Power Dissipation mW Power Supply Max. Accès» Organization Time(ns) V p p (V) Voc(V) Typ» No. Wiita/Erase Standby Read Operating Write/Erase Temperature Method 600mil DIP •TC58F010F-10, 12 525mil SOP •TC58F010FT10, 12


    OCR Scan     		PDF TC58F010P-10, 600mil 525mil TC58F010F-10, TC58F010FT10, TC58F010TR-10, TC58F010T-10, TC58F4000P-12, TC58F4000F-12, 450mi! TC5816FT TC5332410F TC5316200CP TC531621 TC5310