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    TSOP 48 DQS Search Results

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    64Mx16bit

    Abstract: No abstract text available
    Text: White Electronic Designs W3E64M16S-XSTX 64Mx16bit DDR SDRAM FEATURES Double-data-rate architecture; two data transfers per clock cycle All inputs except data & DM are sampled at the positive going edge of the system clock CK Bidirectional data strobe (DQS)


    Original     		PDF 64Mx16bit W3E64M16S-XSTX 8K/64ms 66pin 200MHz 250MHz 266MHz

    TSOP 86 Package

    Abstract: A11E 128MB PC266 TSOP 54 Package 4mx32 TSOP 400 86 TSOP 54 PIN tsop 66 TSOP 66 Package ddr 240 pin
    Text: 1999 DRAM Design Guidelines Options Package Width Data Rate Voltage I/O 16Mb 64Mb 128Mb 256Mb Clock MHz 1 54 TSOP x4 SDR 3.3V LVTTL na 16Mx4 32Mx4 64Mx4 PC100/133 2 54 TSOP x8 SDR 3.3V LVTTL na 8Mx8 16Mx8 32Mx8 PC100/133 3 54 TSOP x16 SDR 3.3V LVTTL na 4Mx16 8Mx16 16Mx16


    Original     		PDF 128Mb 256Mb 16Mx4 32Mx4 64Mx4 PC100/133 16Mx8 32Mx8 4Mx16 TSOP 86 Package A11E 128MB PC266 TSOP 54 Package 4mx32 TSOP 400 86 TSOP 54 PIN tsop 66 TSOP 66 Package ddr 240 pin

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY‡ 128Mb: x16 GRAPHICAL DDR SDRAM ADDENDUM DOUBLE DATA RATE DDR SDRAM MT46V8M16 – 2 MEGX16X4 BANKS Features General Description • 200 MHz Clock, 400 Mb/s/p data rate • Bidirectional data strobe (DQS) transmitted/ received with data, i.e., source-synchronous data


    Original     		PDF 128Mb: Modes50 09005aef80b2cb48 128Mbx16DDR

    Untitled

    Abstract: No abstract text available
    Text: 16M x 72 Registered DDR SDRAM Multi-Chip Package Optimum Density and Performance in One Package W3E16M72SR-XBX Performance Features • • • • • • • • • • • • • • Registered for enhanced performance of bus speeds of 250, 225 and 200MHz


    Original     		PDF W3E16M72SR-XBX 200MHz 265mm2 105mm2 1536mm2 800mm2 W3E16M72SR-XBX MIF2031

    TSOP 66 Package

    Abstract: W3E16M72SR-XBX ddr 3 tsop TSOP 48 Dqs
    Text: 16M x 72 Registered DDR SDRAM Multi-Chip Package Optimum Density and Performance in One Package W3E16M72SR-XBX Performance Features • • • • • • • • • • • • • • Registered for enhanced performance of bus speeds of 250, 225 and 200MHz


    Original     		PDF W3E16M72SR-XBX 200MHz 265mm2 105mm2 1536mm2 800mm2 W3E16M72SR-XBX MIF2031 TSOP 66 Package ddr 3 tsop TSOP 48 Dqs

    Untitled

    Abstract: No abstract text available
    Text: 16M x 72 Registered DDR SDRAM Multi-Chip Package Optimum Density and Performance in One Package W3E16M72SR-XBX Performance Features VA NC ED Registered for enhanced performance of bus speeds of 250, 225, and 200MHz Core Supply Voltage = 2.5V ± 0.2V I/O Supply Voltage = 2.5V ± 0.2V


    Original     		PDF W3E16M72SR-XBX 200MHz MIF2031

    toshiba toggle mode nand

    Abstract: TC518128 TC518129 TC551001 equivalent 551664 TC518512 sgs-thomson power supply Toggle DDR NAND flash jeida 38 norm APPLE A5 CHIP
    Text: DRAM Technology n TOSHIBA DRAM TECHNOLOGY Toshiba DRAM Technology 2 DRAM Technology n DRAM TECHNOLOGY TRENDS Density Design Rule 64M→128M →256M →512M →1G 0.35µm →0.25 µm →0.20 µm →0.175 µm Cost Down, Yield Improvement High Bandwidth Multi - bit


    Original     		PDF 64M128M 66MHz 100MHz 200MHz) 500/600MHz 800MHz 400MHz 800MHz) X16/X18X32 PhotoPC550 toshiba toggle mode nand TC518128 TC518129 TC551001 equivalent 551664 TC518512 sgs-thomson power supply Toggle DDR NAND flash jeida 38 norm APPLE A5 CHIP

    TH58NVG2S3

    Abstract: TC554161AFT-70L 69-206 TC55VCM316BSGN55 TSOP 48 Package nand memory toshiba toshiba sram 2 mbits AFT 181 TC58FVM6T2AFT65 TC58*VG*02 AFT-70L
    Text: 2004-2 PRODUCT GUIDE MOS Memory semiconductor 2004 http://www.semicon.toshiba.co.jp/eng 1. Selection Guide DRAM Dynamic RAMs Network FCRAMTM (DDR FCRAM) 200 MHz (400 Mbps) 182 MHz (364 Mbps) 167 MHz (334 Mbps) 32M x 8 TC59LM806CFT-50 TC59LM806CFT-55 TC59LM806CFT-60


    Original     		PDF TC59LM806CFT-50 TC59LM806CFT-55 TC59LM806CFT-60 TC59LM814CFT-50 TC59LM814CFT-55 TC59LM814CFT-60 TC59LM818DMB-30 TC59LM818DMB-33 TC59LM818DMB-40 TC59LM836DMB-30 TH58NVG2S3 TC554161AFT-70L 69-206 TC55VCM316BSGN55 TSOP 48 Package nand memory toshiba toshiba sram 2 mbits AFT 181 TC58FVM6T2AFT65 TC58*VG*02 AFT-70L

    NT256D64SH8C0GM-6K

    Abstract: DDR333 DDR400 PC2700 PC3200
    Text: NT256D64SH8C0GM / NT128D64SH4C0GM 256MB and 128MB PC3200 and PC2700 Unbuffered DDR SO-DIMM 200 pin Unbuffered DDR SO-DIMM Based on DDR400/333 256M bit C Die device Features • 200-Pin Small Outline Dual In-Line Memory Module SO-DIMM • DRAM DLL aligns DQ and DQS transitions with clock transitions


    Original     		PDF NT256D64SH8C0GM NT128D64SH4C0GM 256MB 128MB PC3200 PC2700 DDR400/333 200-Pin 16Mx16 110nm NT256D64SH8C0GM-6K DDR333 DDR400 PC2700

    L24002

    Abstract: NAND "read disturb" 1GB Toshiba 512 NAND MLC FLASH BGA PC133 registered reference design CMOS 0.8mm process cross Lithium battery CR2025 sony M2V28S30AVP M5M51008CFP
    Text: Future On Chips MITSUBISHI SEMICONDUCTORS MITSUBISHI ELECTRIC CORPORATION ULSI Memory Memory Series Series ULSI RAM/MCP/FLASH New Data Package http://www.mitsubishichips.com Jul. 2000 MITSUBISHI ELECTRIC L-11002-01 CONTENTS General Business Operation Network and Production Facilities


    Original     		PDF L-11002-01 64MDRAM 64MSDRAM 128MSDRAM 256MSDRAM 144MRDRAM L24002 NAND "read disturb" 1GB Toshiba 512 NAND MLC FLASH BGA PC133 registered reference design CMOS 0.8mm process cross Lithium battery CR2025 sony M2V28S30AVP M5M51008CFP

    sandisk micro sd card pin

    Abstract: MCP 1Gb nand 512mb dram 130 256K x 16 DRAM FPM cross reference Toshiba NAND MLC FLASH BGA TSOP 48 Package nand memory toshiba MCP 1Gb 512Mb 130 PC133 registered reference design L7103 02bjxx ulsi
    Text: Future On Chips MITSUBISHI SEMICONDUCTORS MITSUBISHI ELECTRIC CORPORATION ULSI Memory Memory Series Series ULSI RAM/MCP/FLASH New Data Package http://www.mitsubishichips.com Jul. 2000 L-11002-01 MITSUBISHI ELECTRIC CONTENTS 1. General 1 2. DRAM 9 3. Low Power SRAM


    Original     		PDF L-11002-01 L-11003-0I sandisk micro sd card pin MCP 1Gb nand 512mb dram 130 256K x 16 DRAM FPM cross reference Toshiba NAND MLC FLASH BGA TSOP 48 Package nand memory toshiba MCP 1Gb 512Mb 130 PC133 registered reference design L7103 02bjxx ulsi

    MT16LD464AG

    Abstract: No abstract text available
    Text: 8, 16 MEG x 64 SDRAM DIMMs SYNCHRONOUS DRAM MODULE MT8LSDT864A, MT16LSDT1664A For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES PIN ASSIGNMENT Front View 168-Pin DIMM • PC66-, PC100- and PC133-compliant


    Original     		PDF PC66-, PC100- PC133-compliant 168-pin, 128MB 096-cycle -750A1 -745A1 -850A1 -845A1 MT16LD464AG

    NT512D64S8HC0G-5T

    Abstract: NT256D64S88C0G-5T DDR400 PC2700 PC3200 256MB 32Mx64 CL2
    Text: NT512D64S8HC0G / NT256D64S88C0G 512MB and 256MB PC3200 and PC2700 Unbuffered DDR DIMM 184 pin Unbuffered DDR DIMM Based on DDR400/333 256M bit C Die device Features • 184 Dual In-Line Memory Module DIMM • DRAM DLL aligns DQ and DQS transitions with clock transitions


    Original     		PDF NT512D64S8HC0G NT256D64S88C0G 512MB 256MB PC3200 PC2700 DDR400/333 32Mx8 16Mx16 NT512D64S8HC0G-5T NT256D64S88C0G-5T DDR400 PC2700 256MB 32Mx64 CL2

    Untitled

    Abstract: No abstract text available
    Text: NT512D64S8HC0G / NT256D64S88C0G NT512D64S8HC0GY / NT256D64S88C0GY Green 512MB and 256MB PC3200 and PC2700 Unbuffered DDR DIMM 184 pin Unbuffered DDR DIMM Based on DDR400/333 256M bit C Die device Features • 184 Dual In-Line Memory Module (DIMM) • DRAM DLL aligns DQ and DQS transitions with clock transitions


    Original     		PDF NT512D64S8HC0G NT256D64S88C0G NT512D64S8HC0GY NT256D64S88C0GY 512MB 256MB PC3200 PC2700 DDR400/333 32Mx8

    Irvine Sensors Corporation

    Abstract: No abstract text available
    Text: Data Sheet Part No. ISDD64M8STC Irvine Sensors Corporation Microelectronics Products Division 512Mbit 64M x 8 DDR DRAM Memory Stack Features: q q Low Profile: same PCB footprint as a


    Original     		PDF ISDD64M8STC 512Mbit Irvine Sensors Corporation

    TSOP 54 PIN footprint

    Abstract: 256MBIT NOR FLASH tsop sensors Micron NAND DQS ddr 3 tsop k4h280838 stc 3001 256-MBIT
    Text: Data Sheet Part No. ISDD32M8STC Irvine Sensors Corporation Microelectronics Products Division 256Mbit 32M x 8 DDR DRAM Memory Stack Features: q q Low Profile: same PCB footprint as a


    Original     		PDF ISDD32M8STC 256Mbit a256Mbit TSOP 54 PIN footprint 256MBIT NOR FLASH tsop sensors Micron NAND DQS ddr 3 tsop k4h280838 stc 3001 256-MBIT

    tsop sensor

    Abstract: tsop sensors nand flash 128mbit
    Text: Data Sheet Part No. ISDD32M8STB Irvine Sensors Corporation Microelectronics Products Division 256Mbit 32M x 8 DDR DRAM Memory Stack Features: q q Low Profile: same PCB footprint as a


    Original     		PDF ISDD32M8STB 256Mbit 128Mbit tsop sensor tsop sensors nand flash 128mbit

    dram 72-pin simm 128mb

    Abstract: PC133 registered reference design type 760 t85
    Text: 8, 16 MEG x 64 SDRAM DIMMs SYNCHRONOUS DRAM MODULE MT8LSDT864A, MT16LSDT1664A For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES PIN ASSIGNMENT Front View 168-Pin DIMM • PC66-, PC100- and PC133-compliant


    Original     		PDF PC66-, PC100- PC133-compliant 168-pin, 128MB 096-cycle MT4VR6418AG 256MB MT8VR12816AG dram 72-pin simm 128mb PC133 registered reference design type 760 t85

    K4H281638

    Abstract: ISDD16M16STD Toshiba nand flash dqs 256-MBIT TSOP 54 PIN footprint
    Text: Data Sheet Part No. ISDD16M16STD Irvine Sensors Corporation Microelectronics Products Division 256Mbit 16M x 16 DDR DRAM Memory Stack Features: q q Low Profile: same PCB footprint as a


    Original     		PDF ISDD16M16STD 256Mbit K4H281638 ISDD16M16STD Toshiba nand flash dqs 256-MBIT TSOP 54 PIN footprint

    K4H561638

    Abstract: tsop sensors
    Text: Data Sheet Part No. ISDD32M16STD Irvine Sensors Corporation Microelectronics Products Division 512Mbit 32M x 16 DDR DRAM Memory Stack Features: q q Low Profile: same PCB footprint as a


    Original     		PDF ISDD32M16STD 512Mbit K4H561638 tsop sensors

    Untitled

    Abstract: No abstract text available
    Text: DISTINCTIVE CHARACTERISTICS • Single 3.0 V read, write, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs • Compatible with JEDEC-standard word-wide pinouts 48-pin TSOP Package suffix: PFTN - Normal Bend Type, PFTR - Reversed Bend Type


    OCR Scan     		PDF 48-pin 44-pin F48030S-1C-1 0981MAX Q25lMAX F44023S-1C-2 374T75b

    29F800TA

    Abstract: 29f800ba MBM29F800 29F800T
    Text: • FEATURES • Single 5.0 V read, write, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs • Compatible with JEDEC-standard world-wide pinouts 48-pin TSOP I (Package suffix: PFTN - Normal Bend Type, PFTR - Reversed Bend Type)


    OCR Scan     		PDF 48-pin 44-pin F9811 29F800TA 29f800ba MBM29F800 29F800T

    Untitled

    Abstract: No abstract text available
    Text: FLASHMEMORY CMOS • FEATURES • Single 5.0 V read, write, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs • Compatible with JEDEC-standard world-wide pinouts 48-pin TSOP Package suffix: PFTN - Normal Bend Type, PFTR - Reversed Bend Type


    OCR Scan     		PDF 48-pin 44-pin F9707

    G1117S

    Abstract: MT4LC1M165
    Text: ADVANCE ft MT4LC1M16E5 S 1 MEGx 16 DRAM S£MCONOUCTOa INC. DRAM 1 MEG x 16 DRAM 3.3V EDO PAGE MODE, OPTIONAL SELF REFRESH FEATURES PIN ASSIGNMENT (Top View) 44/50-Pin TSOP (DD-6) Œ Œ Œ CE CE Œ Œ Œ Œ Œ Œ 1 2 3 4 S 6 7 8 9 10 11 50 49 48 47 46 45 44


    OCR Scan     		PDF MT4LC1M16E5 024-cycle 225mW 44/50-Pin MT4lCtMt6E54S) L111S41 G1117S MT4LC1M165