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    K4H561638 Price and Stock

    Samsung Electro-Mechanics K4H561638F-UCCC

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    Bristol Electronics K4H561638F-UCCC 10,621
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    Samsung Semiconductor K4H561638H-UCB3T00

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    Bristol Electronics K4H561638H-UCB3T00 1,135
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    Samsung Electronics Co. Ltd K4H561638J-LCCC

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    Bristol Electronics K4H561638J-LCCC 618 1
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    Samsung Semiconductor K4H561638M-VC/LCC

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    Bristol Electronics K4H561638M-VC/LCC 535
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    Samsung Semiconductor K4H561638F-TCB0

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    Bristol Electronics K4H561638F-TCB0 517
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    Quest Components K4H561638F-TCB0 413
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    K4H561638 Datasheets (68)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    K4H561638A-TCA0 Samsung Electronics 128Mb DDR SDRAM Original PDF
    K4H561638A-TCA2 Samsung Electronics 128Mb DDR SDRAM Original PDF
    K4H561638A-TCB0 Samsung Electronics 128Mb DDR SDRAM Original PDF
    K4H561638A-TLA0 Samsung Electronics 128Mb DDR SDRAM Original PDF
    K4H561638A-TLA2 Samsung Electronics 128Mb DDR SDRAM Original PDF
    K4H561638A-TLB0 Samsung Electronics 128Mb DDR SDRAM Original PDF
    K4H561638B Samsung Electronics 256Mb DDR SDRAM Original PDF
    K4H561638B-TCA0 Samsung Electronics 128Mb DDR SDRAM Original PDF
    K4H561638B-TCA2 Samsung Electronics 128Mb DDR SDRAM Original PDF
    K4H561638B-TCB0 Samsung Electronics 128Mb DDR SDRAM Original PDF
    K4H561638B-TLA0 Samsung Electronics 128Mb DDR SDRAM Original PDF
    K4H561638B-TLA2 Samsung Electronics 128Mb DDR SDRAM Original PDF
    K4H561638B-TLB0 Samsung Electronics 128Mb DDR SDRAM Original PDF
    K4H561638C-TCA0 Samsung Electronics 128Mb DDR SDRAM Original PDF
    K4H561638C-TCA2 Samsung Electronics 128Mb DDR SDRAM Original PDF
    K4H561638C-TCB0 Samsung Electronics 128Mb DDR SDRAM Original PDF
    K4H561638C-TLA0 Samsung Electronics 128Mb DDR SDRAM Original PDF
    K4H561638C-TLA2 Samsung Electronics 128Mb DDR SDRAM Original PDF
    K4H561638C-TLB0 Samsung Electronics 128Mb DDR SDRAM Original PDF
    K4H561638D-GCA2 Samsung Electronics DDR 256Mb Original PDF

    K4H561638 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: DDR SDRAM K4H561638J 256Mb J-die DDR SDRAM Specification 66 TSOP-II & 60 FBGA with Lead-Free and Halogen-Free RoHS compliant Industrial Temp. -40 to 85°C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.


    Original     		K4H561638J 256Mb PDF

    K4H560438H

    Abstract: k4h561638h-zc DDR333 DDR400 K4H560838H K4H561638H
    Text: K4H560438H K4H560838H K4H561638H DDR SDRAM 256Mb H-die DDR SDRAM Specification 60 FBGA with Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		K4H560438H K4H560838H K4H561638H 256Mb equipmen-65 K4H560438H k4h561638h-zc DDR333 DDR400 K4H560838H K4H561638H PDF

    K4H561638h

    Abstract: No abstract text available
    Text: K4H561638H Only for Aisin-AW Preliminary Industrial DDR SDRAM 256Mb H-die DDR SDRAM Specification 66 TSOP-II & 60 FBGA Industrial Temp. -40 to 85°C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.


    Original     		K4H561638H 256Mb K4H561638h PDF

    K4H561638N

    Abstract: K4H560838N 266-pin K4H560438N samsung pinout 922
    Text: Rev. 1.01, May. 2010 K4H560438N K4H560838N K4H561638N 256Mb N-die DDR SDRAM 66TSOP- II with Lead-Free & Halogen-Free (RoHS compliant) datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		K4H560438N K4H560838N K4H561638N 256Mb 66TSOP- K4H561638N 266-pin samsung pinout 922 PDF

    K4H561638H

    Abstract: DDR266 DDR333 DDR400
    Text: K4H561638H Industrial DDR SDRAM 256Mb H-die DDR SDRAM Specification 66 TSOP-II & 60 FBGA Industrial Temp. -40 to 85°C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		K4H561638H 256Mb equipment65 K4H561638H DDR266 DDR333 DDR400 PDF

    Untitled

    Abstract: No abstract text available
    Text: K4H560438H K4H560838H K4H561638H DDR SDRAM 256Mb H-die DDR SDRAM Specification 60 FBGA with Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		K4H560438H K4H560838H K4H561638H 256Mb PDF

    K4H561638H-UC

    Abstract: No abstract text available
    Text: K4H560438H K4H560838H K4H561638H DDR SDRAM 256Mb H-die DDR SDRAM Specification 66 TSOP-II with Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		K4H560438H K4H560838H K4H561638H 256Mb K4H561638H-UC PDF

    K4H561638H

    Abstract: K4H560838H K4H560438H DDR266 DDR333 DDR400 K4H561638H-UC
    Text: K4H560438H K4H560838H K4H561638H DDR SDRAM 256Mb H-die DDR SDRAM Specification 66 TSOP-II with Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		K4H560438H K4H560838H K4H561638H 256Mb equip-65 K4H561638H K4H560838H K4H560438H DDR266 DDR333 DDR400 K4H561638H-UC PDF

    K4H560838J

    Abstract: No abstract text available
    Text: K4H560438J K4H560838J K4H561638J DDR SDRAM 256Mb J-die DDR SDRAM Specification 66 TSOP-II with Lead-Free and Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE


    Original     		K4H560438J K4H560838J K4H561638J 256Mb PDF

    Untitled

    Abstract: No abstract text available
    Text: K4H560438J K4H560838J K4H561638J DDR SDRAM 256Mb J-die DDR SDRAM Specification 60 FBGA with Pb-Free and Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		K4H560438J K4H560838J K4H561638J 256Mb PDF

    K4H561638J

    Abstract: K4H560838J k4h560438j K4H561638 DDR266 DDR333 DDR400 k4h561638j-lc
    Text: K4H560438J K4H560838J K4H561638J DDR SDRAM 256Mb J-die DDR SDRAM Specification 66 TSOP-II with Pb-Free and Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		K4H560438J K4H560838J K4H561638J 256Mb K4H561638J K4H560838J k4h560438j K4H561638 DDR266 DDR333 DDR400 k4h561638j-lc PDF

    Hynix Cross Reference

    Abstract: dram cross reference WINBOND hyundai hy57v161610d WINBOND cross reference 64Mb samsung SDRAM TC59SM716FT/AFT 256mb K4H560838B hy57v
    Text: DRAM Cross Reference DDR SDRAM Winbond P/N W946432AD W942504AH W942508AH W942516AH Density 64Mb 256Mb 256Mb 256Mb Org. 2Mx32 64Mx4 32Mx8 16Mx16 Samsung K4D62323HA K4H560438B K4H560838B K4H561638B Hynix Hyundai HY57V643220CT HY5DU56422T HY5DU56822T HY5DU561622T


    Original     		W946432AD W942504AH W942508AH W942516AH 256Mb 2Mx32 64Mx4 32Mx8 Hynix Cross Reference dram cross reference WINBOND hyundai hy57v161610d WINBOND cross reference 64Mb samsung SDRAM TC59SM716FT/AFT 256mb K4H560838B hy57v PDF

    K4H561638J

    Abstract: DDR266 DDR333 DDR400 samsung 922 pinout K4H561638JL
    Text: DDR SDRAM K4H561638J 256Mb J-die DDR SDRAM Specification 66 TSOP-II & 60 FBGA with Pb-Free and Halogen-Free RoHS compliant Industrial Temp. -40 to 85°C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.


    Original     		K4H561638J 256Mb K4H561638J DDR266 DDR333 DDR400 samsung 922 pinout K4H561638JL PDF

    M368L1624DTL

    Abstract: No abstract text available
    Text: M368L1624DTL 184pin Unbuffered DDR SDRAM MODULE 128MB DDR SDRAM MODULE 16Mx64 based on 16Mx16 DDR SDRAM Unbuffered 184pin DIMM 64-bit Non-ECC/Parity Revision 0.1 May. 2002 Rev. 0.1 May. 2002 M368L1624DTL 184pin Unbuffered DDR SDRAM MODULE Revision History


    Original     		M368L1624DTL 184pin 128MB 16Mx64 16Mx16 64-bit M368L1624DTL PDF

    K8D3216UBC-pi07

    Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
    Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM


    Original     		BR-05-ALL-002 K8D3216UBC-pi07 K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm PDF

    256mb ddr333 200 pin

    Abstract: DDR266 DDR266A DDR266B DDR333 K4H560438D-GC K4H561638D
    Text: 256Mb DDR SDRAM Key Features • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe DQS • Four banks operation • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition


    Original     		256Mb 8K/64ms 256mb ddr333 200 pin DDR266 DDR266A DDR266B DDR333 K4H560438D-GC K4H561638D PDF

    Untitled

    Abstract: No abstract text available
    Text: 512Mb x16, DDP DDR SDRAM DDP 512Mbit DDR SDRAM 8M x 16bit x 4 Banks DDR SDRAM Specification Revision 1.0 July. 2002 This is to advise Samsung customers that in accordance with certain terms of an agreement, Samsung is prohibited from selling any DRAM products configured in "Multi-Die Plastic" format for use as components in general and scientific computers, such as mainframes, servers,


    Original     		512Mb 512Mbit 16bit 31/VREF-0 PDF

    Untitled

    Abstract: No abstract text available
    Text: M470L1624DT0 200pin DDR SDRAM SODIMM 128MB DDR SDRAM MODULE 16Mx64 based on 16Mx16 DDR SDRAM 200pin SODIMM 64-bit Non-ECC/Parity Revision 0.1 Jan. 2002 Rev. 0.1 Jan. 2002 M470L1624DT0 200pin DDR SDRAM SODIMM Revision History Revision 0.0 (Dec. 2001) 1. First release.


    Original     		M470L1624DT0 200pin 128MB 16Mx64 16Mx16 64-bit PDF

    SDH ADM

    Abstract: MultiService Access Platform Frame structure for Multiplexing of four E2 streams into E3 stream barker code motorola STM-1 Physical interface PHY STS-3c-SPE DS33 k4h561638f trace code micron label
    Text: ABRIDGED DATA SHEET Rev: 101508 DS33M30/DS33M31/DS33M33 Ethernet Over SONET/SDH Mapper _ General Description _Features ♦ Support for EoS in One STS-3c/VC-4, EoS Over Up to Three Concatenated STS-1/VC-3s,


    Original     		DS33M30/DS33M31/DS33M33 52Mbps 512Mb DS33X11/ DS33X41 com/DS33M30. SDH ADM MultiService Access Platform Frame structure for Multiplexing of four E2 streams into E3 stream barker code motorola STM-1 Physical interface PHY STS-3c-SPE DS33 k4h561638f trace code micron label PDF

    ixp435

    Abstract: Si3050-FT KENDIN KSZ8995M PNX1702EH/G rt9214 PC28F128J3D PNX1702 TM3260 SI3201-FS IXDP465
    Text: Intel IXP435 Multi-Service Residential Gateway Reference Platform User’s Guide June 2007 Document Number: 316848; Revision: 001US INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL® PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR


    Original     		IXP435 001US 0x50000000 0x00080000 0x00000000 0x50800000 Si3050-FT KENDIN KSZ8995M PNX1702EH/G rt9214 PC28F128J3D PNX1702 TM3260 SI3201-FS IXDP465 PDF

    TC5118160

    Abstract: msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260
    Text: New Page 1 DRAM 1Meg 1Mx1 256Kx4 FPM FPM Fujitsu MB81C100 MB81C4256 Goldstar GM71C100 GM71C4256 Hitachi HM511000 HM514256 Hyundai HY531000 HY534256 Micron MT4C1024 MT4C4256 Mitsubishi M5M41000 M5M44256 Nec UPD421000 UPD424256 Oki MSM511000 MSM514256 Samsung alt KM41C1000 KM44C256


    Original     		256Kx4 MB81C100 MB81C4256 GM71C100 GM71C4256 HM511000 HM514256 HY531000 HY534256 MT4C1024 TC5118160 msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260 PDF

    k4h510838d

    Abstract: No abstract text available
    Text: 512Mb x16, DDP DDR SDRAM DDP 512Mbit SDRAM 32M x 16bit x 4 Banks DDR SDRAM Specification Revision 0.0 Apr. 2002 This is to advise Samsung customers that, until August 1, 2003, in accordance with certain terms of an agreement, Samsung is prohibited from selling any DRAM products configured in "Multi-Die Plastic" format for use as components in general and scientific computers, such as


    Original     		512Mb 512Mbit 16bit 31/VREF-0 k4h510838d PDF

    Untitled

    Abstract: No abstract text available
    Text: M368L1624BTL 184pin Unbuffered DDR SDRAM MODULE 128MB DDR SDRAM MODULE 16Mx64 based on 16Mx16 DDR SDRAM Unbuffered 184pin DIMM 64-bit Non-ECC/Parity Revision 0.2 May. 2002 Rev. 0.2 May. 2002 184pin Unbuffered DDR SDRAM MODULE M368L1624BTL Revision History


    Original     		M368L1624BTL 184pin 128MB 16Mx64 16Mx16 64-bit DDR266A PDF

    K4H561638H-UCB3

    Abstract: 256mb ddr333 200 pin 66 pin tsop package DDR300 DDR333 DDR400 WV3EG6437S-D4
    Text: White Electronic Designs WV3EG6437S-D4 ADVANCED* 256MB – 2x16Mx64 DDR SDRAM SO-DIMM, UNBUFFERED FEATURES DESCRIPTION Unbuffered Double-data-rate architecture The WV3EG6437S is a 2x16Mx64 Double Data Rate SDRAM memory module based on 256Mb DDR SDRAM components. The module consists of eight 16Mx16 DDR


    Original     		WV3EG6437S-D4 256MB 2x16Mx64 WV3EG6437S 256Mb 16Mx16 DDR300 DDR400 K4H561638H-UCB3 256mb ddr333 200 pin 66 pin tsop package DDR333 DDR400 WV3EG6437S-D4 PDF