KM416S8030BN
Abstract: KM416S8030B
Text: shrink-TSOP KM416S8030BN Preliminary CMOS SDRAM 128Mb SDRAM Shrink TSOP 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 Aug. 1999 Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.1 Aug. 1999 shrink-TSOP
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KM416S8030BN
128Mb
16Bit
A10/AP
KM416S8030BN
KM416S8030B
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Untitled
Abstract: No abstract text available
Text: shrink-TSOP KM44S32030AN Preliminary CMOS SDRAM 128Mb SDRAM Shrink TSOP 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 April 1999 Samsung Electronics reserves the right to change products or specification without notice. REV. 0.1 Apr. 1999 shrink-TSOP
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KM44S32030AN
128Mb
KM44S32030AT,
54-sTSOP
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Untitled
Abstract: No abstract text available
Text: shrink-TSOP KM48S16030BN Preliminary CMOS SDRAM 128Mb SDRAM Shrink TSOP 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 July 1999 Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 July 1999 shrink-TSOP
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KM48S16030BN
128Mb
A10/AP
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PDF
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M312L5623MTS
Abstract: TSOP 173 g M312L5620MTS-CB3 m312l5623mts-cb3
Text: 2GB TSOP Registered DIMM Preliminary DDR SDRAM DDR SDRAM Registered Module TSOP-II 184pin Registered Module based on 1Gb M-die with 1,200mil Height & 72-bit ECC Revision 0.0 February 2004 Revison 0.0 February, 2004 2GB TSOP Registered DIMM Preliminary
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184pin
200mil
72-bit
M312L5620MTS-CB3/A2/B0
M312L5623MTS-CB3/A2/B0
256Mx4(
K4H1G0438M)
128Mx8(
K4H1G0838M)
M312L5623MTS
TSOP 173 g
M312L5620MTS-CB3
m312l5623mts-cb3
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Untitled
Abstract: No abstract text available
Text: 512MB, 1GB, 2GB TSOP Registered DIMM DDR SDRAM DDR SDRAM Registered Module TSOP-II 184pin Registered Module based on 512Mb B-die with 1,700 / 1,200mil Height & 72-bit ECC Revision 1.0 December. 2003 Revison 1.0 December, 2003 512MB, 1GB, 2GB TSOP Registered DIMM
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512MB,
184pin
512Mb
200mil
72-bit
M383L6523BTS-
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TSOP 86 Package
Abstract: A11E 128MB PC266 TSOP 54 Package 4mx32 TSOP 400 86 TSOP 54 PIN tsop 66 TSOP 66 Package ddr 240 pin
Text: 1999 DRAM Design Guidelines Options Package Width Data Rate Voltage I/O 16Mb 64Mb 128Mb 256Mb Clock MHz 1 54 TSOP x4 SDR 3.3V LVTTL na 16Mx4 32Mx4 64Mx4 PC100/133 2 54 TSOP x8 SDR 3.3V LVTTL na 8Mx8 16Mx8 32Mx8 PC100/133 3 54 TSOP x16 SDR 3.3V LVTTL na 4Mx16 8Mx16 16Mx16
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128Mb
256Mb
16Mx4
32Mx4
64Mx4
PC100/133
16Mx8
32Mx8
4Mx16
TSOP 86 Package
A11E
128MB PC266
TSOP 54 Package
4mx32
TSOP 400 86
TSOP 54 PIN
tsop 66
TSOP 66 Package
ddr 240 pin
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PDF
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PC133 registered reference design
Abstract: No abstract text available
Text: Shrink-TSOP KMM390S6520BN Preliminary PC133 Registered DIMM Revision History Revision 0.0 July 29. 1999, Preliminary - First generation of datasheet. REV. 0.0 July. 1999 Shrink-TSOP KMM390S6520BN Preliminary PC133 Registered DIMM KMM390S6520BN SDRAM DIMM
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KMM390S6520BN
PC133
KMM390S6520BN
64Mx72
32Mx4,
32Mx4
PC133 registered reference design
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PDF
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Untitled
Abstract: No abstract text available
Text: Shrink-TSOP KMM377S6520BN Preliminary 512MB Registered DIMM 512MB Registered DIMM based on 128Mb SDRAM sTSOP2 Revision 0.0 July 1999 Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 July 1999 Shrink-TSOP KMM377S6520BN
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KMM377S6520BN
512MB
128Mb
KMM377S6520BN
64Mx72
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Untitled
Abstract: No abstract text available
Text: Shrink-TSOP KMM464S3323BN Preliminary 144pin SDRAM SODIMM 256MB SDRAM SODIMM based on 128Mb SDRAM sTSOP Revision 0.0 July 1999 Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 July 1999 Shrink-TSOP KMM464S3323BN
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KMM464S3323BN
144pin
256MB
128Mb
KMM464S3323BN
32Mx64
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PDF
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SLUFM1GU
Abstract: hirose 6 pin serial 9 pin serial flash memory 16gb format block diagram laptop ac adapter SLUFM4GU2TUI SLUFM16GU2TU-A usb flash
Text: 1GB to 16GB USB Flash Module SLUFMxxxU2TU I -y USB Solid-State Flash Disk Capacity: 1GB - 16GB USB 2.0 Compliant Form Factors: • Horizontal Mount • Standard 2x5 or Hirose 9-Pin Connector 2x Planar TSOP Flash or 2x Stacked TSOP Flash High Reliability:
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Untitled
Abstract: No abstract text available
Text: White Electronic Designs W3DG6435V-AD1 256MB – 32Mx64 SDRAM UNBUFFERED FEATURES DESCRIPTION PC100 and PC133 compatible The W3DG6435V is a 32Mx64 synchronous DRAM module which consists of eight 32Mx8 SDRAM components in TSOP II package, and one 2Kb EEPROM in an 8 pin TSOP
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256MB
32Mx64
PC100
PC133
W3DG6435V-AD1
W3DG6435V
32Mx8
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k4h510438b
Abstract: No abstract text available
Text: 512MB, 1GB, 2GB TSOP Registered DIMM Pb-Free DDR SDRAM DDR SDRAM Registered Module 184pin Registered Module based on 512Mb B-die with 1,700 / 1,200mil Height & 72-bit ECC 66 TSOP II with Pb-Free (RoHS compliant) Revision 1.2 Oct. 2004 Revison 1.2 Oct. 2004
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512MB,
184pin
512Mb
200mil
72-bit
M383L6523BUS-CA2/B0/A0
k4h510438b
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PDF
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block diagram laptop ac adapter
Abstract: SLUFM16GU2U-A nand flash pcb layout design serial flash memory 16gb format JESD22-B110 nand flash 16gb hirose 6 pin serial 9 pin
Text: 1GB to 16GB USB Flash Module www.stec-inc.com SLUFMxGU2U I -y USB Solid-State Flash Disk Capacity: 1GB - 16GB USB 2.0 Compliant Form Factors: • Horizontal Mount • Standard Connector or 9-Pin DConnector 1-High TSOP Flash Placement or Stacked TSOP Flash Placement
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54-pin
Abstract: TSOP 54 Package TSOP 54 II
Text: THIN SMALL OUTLINE L-LEADED PACKAGE FUJITSU SEMICONDUCTOR DATA SHEET 54 PIN PLASTIC FPT-54P-M01 54-pin plastic TSOP II Lead pitch 0.80 mm Package width 500 mil Lead shape Gullwing Sealing method Plastic mold (FPT-54-M01) 54-pin plastic TSOP (II) (FPT-54P-M01)
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FPT-54P-M01
54-pin
FPT-54-M01)
FPT-54P-M01)
F54001S-2C-1
TSOP 54 Package
TSOP 54 II
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PDF
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WED3DG6435V-D1
Abstract: No abstract text available
Text: WED3DG6435V-D1 -JD1 White Electronic Designs 256MB – 32Mx64 SDRAM UNBUFFERED FEATURES DESCRIPTION The WED3DG6435V is a 32Mx64 synchronous DRAM module which consists of eight 32Mx8 SDRAM components in TSOP II package, and one 2Kb EEPROM in an 8 pin TSOP package for Serial Presence Detect which
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WED3DG6435V-D1
256MB
32Mx64
WED3DG6435V
32Mx8
PC100
PC133
WED3DG6435V-D1
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PDF
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54-PIN
Abstract: No abstract text available
Text: THIN SMALL OUTLINE L-LEADED PACKAGE FUJITSU SEMICONDUCTOR DATA SHEET 54 PIN PLASTIC FPT-54P-M02 54-pin plastic TSOP II Lead pitch 0.80 mm Package width 400 mil Lead shape Gullwing Sealing method Plastic mold (FPT-54P-M02) 54-pin plastic TSOP (II) (FPT-54P-M02)
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FPT-54P-M02
54-pin
FPT-54P-M02)
F54003S-1C-1
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PDF
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Untitled
Abstract: No abstract text available
Text: 184pin Registered DDR SDRAM DIMMs based on 512Mb C ver. TSOP This Hynix Registered Dual In-Line Memory Module (DIMM) series consists of 512Mb C ver. DDR SDRAMs in 400mil. TSOP II packages on a 184pin glass-epoxy substrate. This Hynix 512Mb C ver. based Registered DIMM series provide
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184pin
512Mb
400mil.
184-pin
268max
256Mb
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HYMD564M646C
Abstract: d431 DDR266 DDR266B DDR333 DDR400 DDR400B HYMD532M646C hynix ddr hynix ddr sdram
Text: 200pin DDR SDRAM SO-DIMMs based on 512Mb C ver. TSOP This Hynix unbuffered Small Outline, Dual In-Line Memory Module (DIMM) series consists of 512Mb C ver. DDR SDRAMs in 400mil TSOP II packages on a 200pin glass-epoxy substrate. This Hynix 512Mb C ver. based unbuffered
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200pin
512Mb
400mil
200-pin
DDR400,
DDR333
HYMD564M646C
d431
DDR266
DDR266B
DDR400
DDR400B
HYMD532M646C
hynix ddr
hynix ddr sdram
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hynix ddr400 sdram 1Gb
Abstract: DDR200 DDR266 DDR266A DDR266B DDR333 hynix ddr hynix module suffix
Text: 184pin Registered DDR SDRAM DIMMs based on 512Mb C ver. TSOP This Hynix Registered Dual In-Line Memory Module (DIMM) series consists of 512Mb C ver. DDR SDRAMs in 400mil. TSOP II packages on a 184pin glass-epoxy substrate. This Hynix 512Mb C ver. based Registered DIMM series provide
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184pin
512Mb
400mil.
184-pin
256Mb
HYMD525G726CSP4M
hynix ddr400 sdram 1Gb
DDR200
DDR266
DDR266A
DDR266B
DDR333
hynix ddr
hynix module suffix
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PDF
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TSOP 86 Package
Abstract: 86-PIN TSOP 400 86
Text: SMALL OUTLINE L-LEADED PACKAGE FUJITSU SEMICONDUCTOR DATA SHEET 86 PIN PLASTIC FPT-86P-M01 86-pin plastic TSOP II Lead pitch 0.50 mm Package width 400 mil Lead shape Gullwing Sealing method Plastic mold (FPT-86P-M01) 86-pin plastic TSOP (II) (FPT-86P-M01)
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FPT-86P-M01
86-pin
FPT-86P-M01)
F86001S-1C-1
TSOP 86 Package
TSOP 400 86
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PDF
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TSOP 48 pin flash gbit
Abstract: JS28F00AP33BF 1FFC000
Text: Numonyx Axcell P33-65nm Flash Memory 512-Mbit , 1-Gbit , 2-Gbit Datasheet Product Features High performance: TSOP: — 105ns initial access time 512-Mbit, 1-Gbit Easy BGA and TSOP: — Buffered Enhanced Factory Programming at 2.0MByte/s (typ) using 512-word buffer
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P33-65nm
512-Mbit
512-Mbit,
100ns
16-word
52MHz
105ns
512-word
46MByte/s
TSOP 48 pin flash gbit
JS28F00AP33BF
1FFC000
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PDF
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Untitled
Abstract: No abstract text available
Text: 200pin DDR SDRAM SO-DIMMs based on 512Mb C ver. TSOP This Hynix unbuffered Small Outline, Dual In-Line Memory Module (DIMM) series consists of 512Mb C ver. DDR SDRAMs in 400mil TSOP II packages on a 200pin glass-epoxy substrate. This Hynix 512Mb C ver. based unbuffered
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200pin
512Mb
400mil
200-pin
DDR400,
512MB,
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PDF
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Untitled
Abstract: No abstract text available
Text: 200pin DDR SDRAM SO-DIMMs based on 512Mb C ver. TSOP This Hynix unbuffered Small Outline, Dual In-Line Memory Module (DIMM) series consists of 512Mb C ver. DDR SDRAMs in 400mil TSOP II packages on a 200pin glass-epoxy substrate. This Hynix 512Mb C ver. based unbuffered
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200pin
512Mb
400mil
200-pin
DDR400,
512MB,
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PDF
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Untitled
Abstract: No abstract text available
Text: n AMENDMENT Advanced Micro Devices CMOS Memory Products 1991 Data Book Handbook Publication: Am27C256 PID# 08007F/1 Page 2-40 Amend this data sheet to add information on the TSOP package that is now available for this product. CONNECTION DIAGRAM TSOP Packages
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OCR Scan
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Am27C256
08007F/1
27C256
WCP-26M-2/92-0
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