TC5116400
Abstract: tc5116400csj 300D1 toshiba RAS-25
Text: INTEGRATED TOSHIBA TO SH IBA M O S DIGITAL NTEGRATED CIRCUIT CIRCUIT TECHNICAL T C 5 1 16 4 0 0 C S J / C S T - 4 0 T C 5 1 1 6 4 0 0 C S J / C S T - 50 T C 5 1 1 6 4 0 0 CSJ / C S T * 60 DATA SILICON GATE C M O S TENTATIVE D ATA 4,194,304 W O R D x 4 BIT D Y N A M IC R A M
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TC5116400CSJ/CST
300mil)
400CSJ/C
TC5116400
CSJ/CST-40
CSJ/CST-50
tc5116400csj
300D1
toshiba RAS-25
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TC51V16405
Abstract: TC51V16405c
Text: INTEGRATED TOSHIBA " O S H I B A MOS DIGITAL I NT EGR AT ED CIRCUIT ” 51 V 16405 C5JS CST5 - SO TCS1V1c405 CSJ S/CSTS- 60 CIRCUIT TECHNICAL DATA SILICON GATE CMOS TENTATIVE DATA 4,194,304 W O RD x 4 BIT FAST PAGE DYNAM IC RAM DESCRIPTION The TC51V16405CSJS/CSTS is fast page dynamic RAM organized 4,194,304 words by 4 bits. The
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TCS1V1c405
TC51V16405CSJS/CSTS
300mil)
TCS1V16405
TC51V16405
SOJ26
TSOP26
TC51V16405c
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC51V16400BST-60/70 PRELIMINARY 4,194,304 WORD X 4 BIT DYNAMIC RAM Description TheTC 51V16400B ST is the new generation dynamic RAM organized 4,194,304 word by 4 bits. T heTC 51V16400B ST uti lizes Toshiba's CM O S silicon gate process technology as well as advanced circuit techniques to provide wide operating mar
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TC51V16400BST-60/70
51V16400B
TC51V16400BST
300mil)
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Samsung EOL
Abstract: IS42S81600F is42s16320 IS43DR16320 IS42S32200L IS49NLC36800 IS43R32400E IS46R Mobile SDRAM IS42S32200E
Text: Industrial Grade Memory Products Selecting the Right ISSI Industrial Grade Memory Fastest Random Access Access <20ns 288-576Mb Memory No DRC* Lower cost/bit 18-72Mb RLDRAM 10-20ns Easy Interface, Low Power Higher Density Ultra Low Power Synch SRAM <5ns Asynch SRAM
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288-576Mb
10-20ns
18-72Mb
64Kb-16Mb
8Mb-64Mb
16Mb-512Mb
16Mb-1Gb
256Mb-2Gb
200Mhz
-40oC
Samsung EOL
IS42S81600F
is42s16320
IS43DR16320
IS42S32200L
IS49NLC36800
IS43R32400E
IS46R
Mobile SDRAM
IS42S32200E
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PDF
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AC power SAVING CIRCUIT DIAGRAM
Abstract: MSM7508B MSM7509B MSM7541 MSM7542
Text: O K I Semiconductor MSM754177542 Single Rail CODEC GEN ERA L DESCRIPTION T he MSM7541 a n d MSM7542 a re single-channel CODEC CM O S IC s for voice sig n als ra n g in g from 300 to 3400 H z. T hese devices contain filters for A /D a n d D /A conversion. D esigned especially for a sing le-p o w er su p p ly a n d lo w -p o w er ap p licatio n s, th ese devices are
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MSM7541/MSM7542
MSM7541
MSM7542
MSM7508B
MSM7509B.
b724240
AC power SAVING CIRCUIT DIAGRAM
MSM7509B
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Untitled
Abstract: No abstract text available
Text: IBM0117400 IBM0117400M IBM0117400B IBM0117400P 4M x 4 11/11 DRAM Features • 4,194,304 word by 4 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply • Standard Power SP and Low Power (LP) • 2048 Refresh Cycles - 32 ms Refresh Rate (SP version)
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IBM0117400
IBM0117400M
IBM0117400B
IBM0117400P
300jiA
Add43G9649.
350ns
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Untitled
Abstract: No abstract text available
Text: IBM014440 IBM014440M IBM014440P 1M x 4 10/10 QUAD CAS DRAM Features • 1,048,576 word by 4 bit organization • Low Power Dissipation - Active max - 95 mA / 80 mA (3.3V) - 85 mA / 70 mA (5.0V) - Standby Current: TTL Inputs (max) - 2.0 mA (SP version) - 1.0 mA (IP version)
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IBM014440
IBM014440M
IBM014440P
DDD1777
82F6673
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m51164
Abstract: MSM5116405A M5116405
Text: Um O K I Semiconductor MSM5 1 16405 A 4,194,304-Word x 4-Bit DYN A M IC RAM : FAST PAGE M O D E TYPE W ITH EDO DESCRIPTION The MSM5116405A is a 4,194,304-word x 4-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5116405A achieves high integration, high-speed operation, and low-power
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MSM5116405A_
304-Word
MSM5116405A
26/24-pin
cycles/64
m51164
M5116405
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T02I
Abstract: 26-PIN ZIP20-P-400 514100B
Text: O K I Semiconductor MSM5 1 4 1 OOB/BL 4,194,304-Word x 1-Bit DYNAMIC RAM: FAST PAGE MODE TYPE DESCRIPTION The MSM514100B/BL is a new generation dynamic RAM organized as 4,194,304-word x 1-bit. The technology used to fabricate the MSM514100B/BL is OKI's CMOS silicon gate process technology.
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MSM514100B
MSM514100BL
304-Word
MSM514100B/BL
cycles/16ms,
cycles/128ms
2424G
T02I
26-PIN
ZIP20-P-400
514100B
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Untitled
Abstract: No abstract text available
Text: INTEGRATED TOSHIBA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC51V16400 CSJ / CST - 50 TC51V16400 CSJ / CST -60 CIRCUIT TECHNICAL DATA SILICON GATE CMOS TENTATIVE DATA 4,194,304-WORD BY 4-BIT FAST PAGE DYNAMIC RAM DESCRIPTION The TC51V16400CSJ/CST is a fast page dynamic RAM organized as 4,194,304 words by 4 bits. Fabricated
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TC51V16400
304-WORD
TC51V16400CSJ/CST
26/24-pin
SOJ26
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PDF
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Untitled
Abstract: No abstract text available
Text: • li 6 INTEGRATED CIRCUIT TO SH IB A TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC51V4400APL / AJ L / A SJ L / A Z L / AFTL / ATRL - 8 0 / 1 0 SILICON GATE CMOS TECH NICAL DATA TENTATIVE D A TA 1.048.576 W ORD x 4 BIT DYN AM IC RAM DESCRIPTION The TC51V4400APL/AJL/ASJL/AZL/AFTL/ATRL is the new generation dynamic RAM organized
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TC51V4400APL
TC51V4400APL/AJL/ASJL/AZL/AFTL/ATRL
TC51V4400APL/AJL/ASJL/AZL/
300/35aÃ
TC51V4400APLâ
T50P26
54MAX
TSOP26
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PDF
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l4fl
Abstract: No abstract text available
Text: TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC51V17400BST-60/70 PRELIMINARY 4,194,304 WORD X 4 BIT DYNAMIC RAM Description The TC51V17400BST is the new generation dynamic RAM organized 4,194,304 word by 4 bits. The TC51V17400BST utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both
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TC51V17400BST-60/70
TC51V17400BST
300mil)
DR16050394
0Q277S2
TCH724Ã
l4fl
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Untitled
Abstract: No abstract text available
Text: TOSHIBA- m TQTTSHfi 00BB307 7Dfi • T C 5 1 V 1 7 4 0 0 B S T -6 0 /7 0 PRELIMINARY 4,194,304 WORD X 4 BIT DYNAMIC RAM cs Description T heTC51V17400BST is the new generation dynamic RAM organized 4,194,304 word by 4 bits. The TC51V17400BST uti lizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating mar
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00BB307
heTC51V17400BST
TC51V17400BST
300mil)
002S3m
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a10u
Abstract: B724e
Text: O K I Semiconductor MSM514101B/BL 4,194,304-Word x 1-Bit DYNAMIC RAM : NIBBLE MODE TYPE DESCRIPTION The MSM514101B/BL is a new generation dynamic RAM organized as 4,194,304-word x 1-bit. The technology used to fabricate the MSM514101B/BL is OKI's CMOS silicon gate process technology.
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MSM514101B/BL
304-Word
MSM514101B/BL
1024cycles/16ms,
128ms
a10u
B724e
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7400A
Abstract: MSM51V17400A
Text: O K I Semiconductor M SM 51V17400A_ 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17400A is a 4,194,304-word x 4-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM51V17400A achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon double metal CMOS. The MSM51V17400A is
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MSM51
7400A_
304-Word
MSM51V17400A
M5M51V17400A
26/24-pin
7400A
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MSM51V16400A
Abstract: No abstract text available
Text: O K I Semiconductor MSM51 V16400 A 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16400A is a 4,194354-word x 4-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM51V16400A achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon double metal CMOS. The MSM51V16400A is
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MSM51V16400A
304-Word
MSM51V16400A
26/24-pin
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PDF
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MSM514400C/CL-60
Abstract: No abstract text available
Text: O K I Semiconductor MSM514400C/CL_ 1,048,576-W ord x 4-Bit D Y N A M IC R A M : FA ST P A G E M O D E T Y P E DESCRIPTION The MSM514400C/CL is a 1,048,576-word x 4-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM514400C/CL achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon single metal CMOS. The MSM514400C/CL is
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MSM514400C/CL_
MSM514400C/CL
576-word
26/20-pin
20-pin
or26/20-pin
MSM514400CL
MSM514400C/CL-60
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PDF
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IBM0144401M
Abstract: IBM014440M1M IBM014440P1M
Text: IBM0144401M x 410/10, 5.0V, QUAD CAS. IBM014440P1M x 410/10, 3.3V, QUAD CAS, LP, SR. IBM014440M1M x 410/10, 5.0V, QUAD CAS, LP, SR. IBM014440 IBM014440M IBM014440P 1M x 4 10/10 QUAD CAS DRAM Features • 1,048,576 word by 4 bit organization • Low Power Dissipation
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IBM0144401M
IBM014440P1M
IBM014440M1M
IBM014440
IBM014440M
IBM014440P
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IBM01174004M
Abstract: IBM0117400B4M IBM0117400M4M IBM0117400P4M
Text: IBM01174004M x 411/11, 5.0V. IBM0117400P4M x 411/11, 3.3V, LP, SR. IBM0117400M4M x 411/11, 5.0V, LP, SR. IBM0117400B4M x 411/11, 3.3V. IBM0117400 IBM0117400M IBM0117400B IBM0117400P 4M x 4 11/11 DRAM Features • 4,194,304 word by 4 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply
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IBM01174004M
IBM0117400P4M
IBM0117400M4M
IBM0117400B4M
IBM0117400
IBM0117400M
IBM0117400B
IBM0117400P
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PDF
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IBM01164004M
Abstract: IBM0116400B4M IBM0116400M IBM0116400P
Text: IBM01164004M x 412/10, 5.0V. IBM0116400P 4M x 412/10, 3.3V, LP, SR. IBM0116400M 4M x 412/10, 5.0V, LP, SR. IBM0116400B4M x 412/10, 3.3V. IBM0116400 IBM0116400M IBM0116400B IBM0116400P 4M x 4 12/10 DRAM Features • 4,194,304 word by 4 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply
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IBM01164004M
IBM0116400P
IBM0116400M
IBM0116400B4M
IBM0116400
IBM0116400M
IBM0116400B
IBM0116400P
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PDF
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0116405
Abstract: No abstract text available
Text: IBM0116405 IBM0116405M IBM0116405B IBM0116405P 4M x 4 12/10 EDO ORAM Features • 4,194,304 word by 4 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply • Standard Power SP and Low Power (LP) • 4096 Refresh Cycles - 64 ms Refresh Rate (SP version)
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IBM0116405
IBM0116405M
IBM0116405B
IBM0116405P
104ns
124ns
200nA
300nA
0116405
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM7533 / MSM7534 5V Single-Rail PCM CODECs DESCRIPTION The MSM7533 and MSM7534 are single-rail, low-voltage, dual-channel PCM CODECs which perform voice digitization using presampling and reconstruction filters for transmit and receive operations in
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MSM7533
MSM7534
MSM7534
MSM7533H
MSM7533V
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PDF
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM5 14402A/AL_ 1,048,576-Word x 4-Bit DYNAMIC RAM : STA TIC COLUM N MODE TYPE DESCRIPTION The MSM514402A/AL is a new generation dynam ic RAM organized as 1,048,576-w ord x 4-bit. The technology used to fabricate the MSM514402A/AL is OKI's CMOS silicon gate process technology.
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4402A/AL_
576-Word
MSM514402A/AL
576-w
cycles/16ms,
cycles/128ms
b7S424D
D0171Ã
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PDF
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM5 1V4400/SL_ 1,048,576-Word x 4-Bit DYNAMIC RAM: FAST PAGE MODE TYPE D ESC R IP T IO N The MSM51V4400/SL is a new generation dynam ic RAM organized as 1,048,576-w ord x 4-bit configuration. The technology used to fabricate the MSM51V4400/SL is OKI's CMOS silicon gate
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1V4400/SL_
576-Word
MSM51V4400/SL
576-w
MSM51V4400/SL
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PDF
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