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    UDT 260 DETECTOR Search Results

    UDT 260 DETECTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    NR4510UR-AZ Renesas Electronics Corporation Detectors, , / Visit Renesas Electronics Corporation
    YCB16RL78I1D001B Renesas Electronics Corporation Smoke Detector Visit Renesas Electronics Corporation
    EXE8602-DNT Renesas Electronics Corporation 71 – 86 GHz Power Detector Visit Renesas Electronics Corporation
    ICL7665SCPAZ Renesas Electronics Corporation CMOS Micropower Over/Under Voltage Detector Visit Renesas Electronics Corporation
    ICL7665SACPAZ Renesas Electronics Corporation CMOS Micropower Over/Under Voltage Detector Visit Renesas Electronics Corporation

    UDT 260 DETECTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    InGaas PIN photodiode, 1550 NEP

    Abstract: quad photodiode psd quadrant photodiode InGaas PIN photodiode, 1550 sensitivity photodiode 850nm nep UDT Sensors Photodiode, 1550nm NEP InGaas PIN photodiode chip quad photodiode PIN photodiode 850nm
    Text: InGaAs Quad Detectors 4 Quadrant Detectors for NIR Wavelengths The UDT InGaAs Quad series of Photodetectors allow position measurements of wavelengths from 850nm to 1700nm. The 4 Quadrant devices made of InGaAs come in 1mmφ InGaAs-1000-4 and 3mmφ (InGaAs-3000-4) sizes. They exhibit an excellent combination of High


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    850nm 1700nm. InGaAs-1000-4) InGaAs-3000-4) 1550nm InGaas PIN photodiode, 1550 NEP quad photodiode psd quadrant photodiode InGaas PIN photodiode, 1550 sensitivity photodiode 850nm nep UDT Sensors Photodiode, 1550nm NEP InGaas PIN photodiode chip quad photodiode PIN photodiode 850nm PDF

    large area quadrant photodiode

    Abstract: SPOT-15-YAG 1064 nm UDT Sensors PSD photodiodes
    Text: YAG Series Nd:YAG Optimized Photodetectors The UDT YAG Series of photo detectors are optimized for high response at 1060 nm, the YAG laser light wavelength, and low capacitance, for high speed operation and low noise. These detectors can be used for sensing


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    low noise ir photodiode amplifier

    Abstract: UDT photodiode -5 UDT photodiode -5 silicon UDT Sensors PSD
    Text: Large Area InGaAs Photodiodes Low Noise IR Sensitive Detectors " " APPLICATIONS FEATURES • High Responsivity • Large Sensing Area • Low Noise • IR Sensing • Medical Devices • Power Measurement • Temperature Sensors Capacitance pF Shunt Resistance


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    1300nm 900nm 1700nm. low noise ir photodiode amplifier UDT photodiode -5 UDT photodiode -5 silicon UDT Sensors PSD PDF

    Charge Sensitive Preamplifier Specifications Mode

    Abstract: Photodiode and amplifier IC for CD far uv photodiode photodiode chip silicon opa637 UDT Sensors
    Text: Soft X-Ray, Deep UV Enhanced Series Inversion Layer Silicon Photodiodes UDT Sensors’ 1990 R&D 100 award winning X-UV detector series are a unique class of silicon photodiodes designed for additional sensitivity in the X-Ray region of the electromagnetic spectrum without use of any


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    UDT Sensors PSD

    Abstract: Photodiode Solderable Chip two color photodiode
    Text: Solderable Chip Series Planar Diffused Silicon Photodiodes The Solderable photodiode chip series offer a low cost approach to applications requiring large active area photodetectors with or without flying leads for ease of assembly and / or situations where the detector is


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    UDT Sensors PSD

    Abstract: fast photodiode amplifier UDT photodiode -5 silicon UDT 500 UDT-555D UDT Sensors 555D UDT PIN UDT-020UV Photodiode amplifier ceramic case
    Text: Photops Photodiode-Amplifier Hybrids The Photop™ Series, combines a photodiode with an operational amplifier in the same package. Photops™ general-purpose detectors have a spectral range from either 350 nm to 1100 nm or 200 nm to 1100nm. They have an integrated package ensuring low noise output


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    1100nm. UDT Sensors PSD fast photodiode amplifier UDT photodiode -5 silicon UDT 500 UDT-555D UDT Sensors 555D UDT PIN UDT-020UV Photodiode amplifier ceramic case PDF

    udt 9dmi

    Abstract: spot photodiode UDT Sensors PSD SPOT-2D 801 87 XXX 20 001 SPOT-9D 350-1100nm
    Text: Segmented Photodiodes SPOT Series Position Sensing Detector (PSD) The SPOT Series are common substrate photodetectors segmented into either two (2) or four (4) separate active areas. They are available with either a 0.005" or 0.0004" well defined gap between the adjacent


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    350-1100nm. udt 9dmi spot photodiode UDT Sensors PSD SPOT-2D 801 87 XXX 20 001 SPOT-9D 350-1100nm PDF

    FIL-3C

    Abstract: fil 3c
    Text: Photoconductive Series Planar Diffused Silicon Photodiodes The Photoconductive Detector Series are suitable for high speed and high sensitivity applications. The spectral range extends from 350 to 1100 nm, making these photodiodes ideal for visible and near IR applications,


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    UDT-455

    Abstract: UDT photodiode -5 silicon photodiode high responsivity high shunt resistance silicon pin photodiode laser detection UDT Sensors PSD model UDT-455 UDT Sensors
    Text: Photops Photodiode-Amplifier Hybrids The Photop™ Series, combines a photodiode with an operational amplifier in the same package. Photops™ general-purpose detectors have a spectral range from either 350 nm to 1100 nm or 200 nm to 1100nm. They have an integrated package ensuring low noise output


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    1100nm. UDT-455 UDT photodiode -5 silicon photodiode high responsivity high shunt resistance silicon pin photodiode laser detection UDT Sensors PSD model UDT-455 UDT Sensors PDF

    UDT Sensors PSD

    Abstract: LSC-30D UDT SC 100 SC-10D SC50D UDT TETRA-LATERAL PSD LSC-5D SC-25D SC10D udt sc 10
    Text: Tetra-Lateral PSD’s Position Sensing Detectors PSD Tetra-lateral position sensing detectors are manufactured with one single resistive layer for both one and two dimensional measurements. They feature a common anode and two cathodes for one dimensional position


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    photodiode CIE eye response

    Abstract: PIN-10AP uv photodiode for 254nm UDT Sensors PIN-10DF UDT 260 detector 555D PIN-555AP PIN-005D-254F UDT BNC
    Text: DETECTOR-FILTER COMBINATION SERIES PLANAR DIFFUSED SILICON PHOTODIODES APPLICATIONS • Analytical Chemistry • Spectrophotometry • Densitometers • Photometry/Radiometry • Spectroradiometry • Medical Instrumentation • Liquid Chromatography The Detector-Filter combination series incorporates a filter with a photodiode


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    PIN-10DF PIN-005D-254F PIN-10DF photodiode CIE eye response PIN-10AP uv photodiode for 254nm UDT Sensors UDT 260 detector 555D PIN-555AP PIN-005D-254F UDT BNC PDF

    FIL-100V

    Abstract: UDT PIN 10DP UDT 10 DP RSH M 5DPI UDT BNC UDT BNC PIN UDT BNC PIN 8 PIN3CDP pin-10dp
    Text: Photovoltaic Series Planar Diffused Silicon Photodiodes The Photovoltaic Detector series is utilized for applications requiring high sensitivity and moderate response speeds, with an additional sensitivity in the visible-blue region for the blue enhanced series. The spectral


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    PIN-10DF

    Abstract: PIN-10AP photodiode CIE eye response UDT BNC UDT Sensors PIN-555AP uv photodiode for 254nm PIN10AP UDT BNC UV Bandpass Filters IR transmission
    Text: DETECTOR-FILTER COMBINATION SERIES PLANAR DIFFUSED SILICON PHOTODIODES APPLICATIONS • Analytical Chemistry • Spectrophotometry • Densitometers • Photometry/Radiometry • Spectroradiometry • Medical Instrumentation • Liquid Chromatography The Detector-Filter combination series incorporates a filter with a photodiode


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    PIN-10DF PIN-005D-254F PIN-10DF PIN-10AP photodiode CIE eye response UDT BNC UDT Sensors PIN-555AP uv photodiode for 254nm PIN10AP UDT BNC UV Bandpass Filters IR transmission PDF

    photodiode pin alpha particles

    Abstract: PIN-RD100A PIN-RD100 UDT photodiode -5 psd photodiode
    Text: High Breakdown Voltage, Fully Depleted Series Large Active Area Photodiodes The Large Active Area High Speed Detectors can be fully depleted to achieve the lowest possible junction capacitance for fast response times. They may be operated at a higher reverse voltage, up to the maximum


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    UDT Sensors

    Abstract: PIN-07CSLR PIN-16CSL PIN-07CSL
    Text: Plastic Encapsulated Series Lead Frame Molded Photodiodes UDT Sensors offers a line of high quality and reliability plastic encapsulated photodiodes. These molded devices are available in a variety of shapes and sizes of photodetectors and packages, including


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    T13/4, UDT Sensors PIN-07CSLR PIN-16CSL PIN-07CSL PDF

    UDT 260

    Abstract: UDT Sensors Photodiode laser detector BPX-65 Hybrids fiber optic InGaAs apd photodiode Silicon apd Avalanche cmos photodetector power amplifier optic fiber
    Text: FIBER OPTIC SERIES APPLICATIONS FEATURES • Fiber Optic Communication Links • Speeds in sub ns • Video Systems • High gain • Laser Monitoring Systems • Low dark current • Computers and Peripherals • Low capacitance • Industrial Controls • TO-46 metal can


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    DC-50MHz UDT 260 UDT Sensors Photodiode laser detector BPX-65 Hybrids fiber optic InGaAs apd photodiode Silicon apd Avalanche cmos photodetector power amplifier optic fiber PDF

    InGaAs apd photodiode

    Abstract: UDT Sensors Photodiode laser detector BPX-65
    Text: FIBER OPTIC SERIES APPLICATIONS FEATURES • Fiber Optic Communication Links • Speeds in sub ns • Video Systems • High gain • Laser Monitoring Systems • Low dark current • Computers and Peripherals • Low capacitance • Industrial Controls • TO-46 metal can


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    laser range finder schematics

    Abstract: BPW34 application note "laser range finder" 254 nm uv LED SPOT-9DMI APPLICATION NOTE BpW34 far uv photodiode UDT sensors BPX65 PIN-10AP
    Text: TABLE OF CONTENTS Revision 98.3 Index and Selection Guide Photodiode Characteristics and Applications Application Notes and Further Reading Sources Standard Photodiodes, Electro-Optical Specifications and Design Notes Planar Diffused Photodiodes Photoconductive Series


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    udt UV100

    Abstract: UV-35 UV-20 UDT UDT BNC UV UDT UV-005 UV-005 UV-015 UV-100 UV-100L UV-50
    Text: UV Enhanced Series Inversion Layers and Planar Diffused Silicon Photodiodes UDT Sensors offers two distinct families of UV enhanced silicon photodiodes. Inversion channel series and planar diffused series. Both families of devices are especially designed for low noise detection in the


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    epow ps 10

    Abstract: GP1U281Q GP1U280Q GP1U282Q GP1U287Q GP1U28Q GPLU289
    Text: . . . SPEC. NCJ. DATE: REPARED BY: ?, md 0[-, d, l?~~ DATE: PPROVED 3Y: 9 Pages PAGE ELECTROMC CO~ONENTS ~,f ,~9~:’ a ti GROUP SHARP CORPOWTION DMSION EP~Z~ATTVE 0=0-ELECTROMC DEVIC= DIV. SPEC~ICATION / D~CE SPECIFICAmON ~R tired Light Detecting unit


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    GP1U28Q TD-105D epow ps 10 GP1U281Q GP1U280Q GP1U282Q GP1U287Q GPLU289 PDF

    rema- radio

    Abstract: GP1U281R GP1U28R U28R 1U28R SHARP 20 WZ 51 GP1U280R GP1U282R GP1U283R GPIU281R
    Text: . SPEC. No DATE: ‘REPAREDBY: !. haA ode 6 , i?~~ \ S H A R P ISSUE 4, /q 9 ‘d 9 Pages PAGE DATE: WPROVED BY: ELECTRONIC COMPONEAW GROUP SW CORPORATION REPRE-SENTATfVE DMSION OPTO-ELECTRONIC DEVfCES DIV. SPECIFICATION DEVICE SPECIFICATION ~R Mared Light RtectWg tit


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    1U28R rema- radio GP1U281R GP1U28R U28R SHARP 20 WZ 51 GP1U280R GP1U282R GP1U283R GPIU281R PDF

    opa404u

    Abstract: OPA404 OPA404AG OPA404BG OPA404KU OPA404SG UDT PIN
    Text: OPA404 Quad High-Speed Precision Difet OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● WIDE BANDWIDTH: 6.4MHz ● HIGH SLEW RATE: 35V/µs ● LOW OFFSET: ±750µV max ● PRECISION INSTRUMENTATION ● ● ● ● ● ● LOW BIAS CURRENT: ±4pA max ● LOW SETTLING: 1.5µs to 0.01%


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    OPA404 OPA404 100kHz 48dB/Octave, 650kHz 410MHz opa404u OPA404AG OPA404BG OPA404KU OPA404SG UDT PIN PDF

    OPA404AG

    Abstract: 100-k05 OPA404 OPA404BG OPA404KU OPA404SG OPA404KP UDT Pin-040A
    Text: OPA404 Quad High-Speed Precision Difet OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● WIDE BANDWIDTH: 6.4MHz ● HIGH SLEW RATE: 35V/µs ● LOW OFFSET: ±750µV max ● PRECISION INSTRUMENTATION ● ● ● ● ● ● LOW BIAS CURRENT: ±4pA max ● LOW SETTLING: 1.5µs to 0.01%


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    OPA404 OPA404 48dB/Octave, 650kHz 410MHz OPA404AG 100-k05 OPA404BG OPA404KU OPA404SG OPA404KP UDT Pin-040A PDF

    301B-AC

    Abstract: United Detector Technology United Detector Technology Photodiodes FIL-C10D udt sc 10 United Detector Technology, silicon photodiode UDT 260 C10D FIL-100C fil 3c
    Text: 77C 00841 d ~ r~ 77 DË T | ' m O T à ? 9310987 UNITED DETECTOR UNIT E» DETECTOR SILICON PHOTODIODES dOGOflm fl FIL* PHOTOCONDUCTIVE DEVICES PC \ : \ Parameter & Unit Active Surface Area . Typ. Junction •; ; Capacitance-C j. ' Typical . Responsivity-R\


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    930nm FIL-20C FIL-100C 100x0 301B-AC United Detector Technology United Detector Technology Photodiodes FIL-C10D udt sc 10 United Detector Technology, silicon photodiode UDT 260 C10D fil 3c PDF