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    UM2108 Search Results

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    UM2108 Price and Stock

    Microchip Technology Inc UM2108B

    Si PPIN Hermetic Glass Axial, Projected EOL: 2044-08-15
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    Microchip Technology Inc UM2108B 12 Weeks
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    Microchip Technology Inc UM2108A

    Si PPIN Hermetic Seal, Projected EOL: 2044-08-15
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    Microchip Technology Inc UM2108A 12 Weeks
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    Microchip Technology Inc UM2108D

    Si PPIN Hermetic Stud, Projected EOL: 2044-08-15
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    Microchip Technology Inc UM2108C

    Si PPIN Hermetic Stud, Projected EOL: 2044-08-15
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    Microchip Technology Inc UM2108E

    Si PPIN Hermetic Glass Axial, Projected EOL: 2044-08-15
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    UM2108 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    UM2108 Microsemi Pin Diode Scan PDF
    UM2108 Microsemi PIN Diode Scan PDF

    UM2108 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: UM2100 TM ATTENUATOR AND POWER PIN DIODES 2 – 30 MHz RoHS Compliant Versions Available K EY FEAT U RES DESCRIPT ION IMPORTANT: For the most current data, consult our website: www.MICROSEMI.com ABSOLU T E M AX I M U M RAT I N GS AT 2 5 º C U N LESS OT H ERWI SE SPECI FI ED


    Original     		UM2100 60dBm) UMX2101B, PDF

    UM2110

    Abstract: 1KW, 2-30MHz UM2100 UM2101 UM2102 UM2104 UM2106 UM2108
    Text: UM2100 ATTENUATOR AND POWER PIN DIODES 2-30 MHz KEY FEATURES DESCRIPTION 60 dBm at 300 kHz with 1 watt per tone. The forward biased resistance/reactance vs. frequency characteristics are flat down to 10 kHz. The capacitance vs. reverse bias voltage characteristic


    Original     		UM2100 UM2100 2-30MHz) UM2110 1KW, 2-30MHz UM2101 UM2102 UM2104 UM2106 UM2108 PDF

    UM2102

    Abstract: UM2100 UM2101 UM2104 UM2106 UM2108 UM2110
    Text: UM2100 TM ATTENUATOR AND POWER PIN DIODES 2 – 30 MHz RoHS Compliant Versions Available KEY FEATURES UM2100 Series PIN diodes are designed for transmit/receive switch and attenuator applications in HF band 2-30MHz and below. As series configured switches, these long lifetime (25 s typical) diodes


    Original     		UM2100 UM2100 2-30MHz) UM2102 UM2101 UM2104 UM2106 UM2108 UM2110 PDF

    KV38S2

    Abstract: KV3201 gc4700 UM7108 UM6606 GC4430 GC1210 GC4213 gc4213 transistor GC4731
    Text: RF/MICROWAVE discretes & modules Microsemi R TM more than solutions - enabling possibilities Solutions l l l l l l l l Microwave Links Base stations Military/avionics Medical/MRI Radar/phase shifters Space / satellite applications V Sat terminals Land mobile radios


    Original     		PDF

    UM2100

    Abstract: um211 HP436A UM2101 UM2102 UM2104 UM2106 UM2108 UM2110
    Text: UM2100 SERIES PIN DIODE FEATURES DESCRIPTION • HF band 2-30 MHz PIN • Long Lifetim e (25ns typ.) • High Power (1KW, CW) • High Isolation (32dB) U M 2100 Series PIN diodes are designed for transmit/receive switch and attenuator applications in HF band (2-30M H z) and below. As series configured


    OCR Scan     		UM2100 2-30MH7) 60dBm) -4-4-X44-M. um211 HP436A UM2101 UM2102 UM2104 UM2106 UM2108 UM2110 PDF

    Untitled

    Abstract: No abstract text available
    Text: PIN DIODE UM2100 SERIES FEATURES DESCRIPTION • HF band 2-30 MHz PIN • Long Lifetim e (25ns typ.) • High Power (1KW, CW) • High Isolation (32dB) U M 2100 Series PIN diodes are designed for transmit/receive switch and attenuator applications in HF band (2-30M H z) and below. As series configured


    OCR Scan     		UM2100 2-30M re1235 PDF

    Untitled

    Abstract: No abstract text available
    Text: PIN DIODE UM2100 SERIES FEATURES • DESCRIPTION H F band 2 -3 0 M H z P IN U M 2 1 0 0 Series P IN diodes are designed for transm it/receive switch and attenuator applications in H F band (2 -3 0 M H z ) and below. As series configured • Long Lifetime (25ns typ.)


    OCR Scan     		UM2100 444-M PDF