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Abstract: No abstract text available
Text: UM2100 TM ATTENUATOR AND POWER PIN DIODES 2 – 30 MHz RoHS Compliant Versions Available K EY FEAT U RES DESCRIPT ION IMPORTANT: For the most current data, consult our website: www.MICROSEMI.com ABSOLU T E M AX I M U M RAT I N GS AT 2 5 º C U N LESS OT H ERWI SE SPECI FI ED
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UM2100
60dBm)
UMX2101B,
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UM2110
Abstract: 1KW, 2-30MHz UM2100 UM2101 UM2102 UM2104 UM2106 UM2108
Text: UM2100 ATTENUATOR AND POWER PIN DIODES 2-30 MHz KEY FEATURES DESCRIPTION 60 dBm at 300 kHz with 1 watt per tone. The forward biased resistance/reactance vs. frequency characteristics are flat down to 10 kHz. The capacitance vs. reverse bias voltage characteristic
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UM2100
UM2100
2-30MHz)
UM2110
1KW, 2-30MHz
UM2101
UM2102
UM2104
UM2106
UM2108
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LE79Q2281
Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572
Text: Product Portfolio 2013-2014 ng-edge Embed Power Matters. About Microsemi Microsemi Corporation is a leading provider of semiconductor solutions differentiated by power, security, reliability and performance. The company concentrates on providing solutions for applications where power matters, security
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UM2102
Abstract: UM2100 UM2101 UM2104 UM2106 UM2108 UM2110
Text: UM2100 TM ATTENUATOR AND POWER PIN DIODES 2 – 30 MHz RoHS Compliant Versions Available KEY FEATURES UM2100 Series PIN diodes are designed for transmit/receive switch and attenuator applications in HF band 2-30MHz and below. As series configured switches, these long lifetime (25 s typical) diodes
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UM2100
UM2100
2-30MHz)
UM2102
UM2101
UM2104
UM2106
UM2108
UM2110
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KV38S2
Abstract: KV3201 gc4700 UM7108 UM6606 GC4430 GC1210 GC4213 gc4213 transistor GC4731
Text: RF/MICROWAVE discretes & modules Microsemi R TM more than solutions - enabling possibilities Solutions l l l l l l l l Microwave Links Base stations Military/avionics Medical/MRI Radar/phase shifters Space / satellite applications V Sat terminals Land mobile radios
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UM9441 UM9442
Abstract: UMM5050 NKT 0039 HUM4020 NTE Semiconductor Technical Guide and Cross Refer wireless mobile charging through microwaves MSC 9415 hf power combiner broadband transformers mpd101 Structure rotary phase shifter
Text: Microsemi-Watertown THE PIN DIODE CIRCUIT DESIGNERS’ HANDBOOK The PIN Diode Circuit Designers’ Handbook was written for the Microwave and RF Design Engineer. Microsemi Corp. has radically changed the presentation of this PIN diode applications engineering material to increase its usefulness to Microwave and RF Circuit Designers. A major part of
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MPD-101A
UM9441 UM9442
UMM5050
NKT 0039
HUM4020
NTE Semiconductor Technical Guide and Cross Refer
wireless mobile charging through microwaves
MSC 9415
hf power combiner broadband transformers
mpd101
Structure rotary phase shifter
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UM9442
Abstract: UMM5050 MSC 9415 pin diodes radiation detector MSC 501 302 diode PIN DIODE DRIVER CIRCUITS "Microwave Diode" UM9441 Microwave PIN diode hf power combiner broadband transformers
Text: Microsemi-Watertown THE PIN DIODE CIRCUIT DESIGNERS’ HANDBOOK The PIN Diode Circuit Designers’ Handbook was written for the Microwave and RF Design Engineer. Microsemi Corp. has radically changed the presentation of this PIN diode applications engineering material to increase its usefulness to Microwave and RF Circuit Designers. A major part of
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MPD-101A
UM9442
UMM5050
MSC 9415
pin diodes radiation detector
MSC 501 302 diode
PIN DIODE DRIVER CIRCUITS
"Microwave Diode"
UM9441
Microwave PIN diode
hf power combiner broadband transformers
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UM2100
Abstract: um211 HP436A UM2101 UM2102 UM2104 UM2106 UM2108 UM2110
Text: UM2100 SERIES PIN DIODE FEATURES DESCRIPTION • HF band 2-30 MHz PIN • Long Lifetim e (25ns typ.) • High Power (1KW, CW) • High Isolation (32dB) U M 2100 Series PIN diodes are designed for transmit/receive switch and attenuator applications in HF band (2-30M H z) and below. As series configured
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UM2100
2-30MH7)
60dBm)
-4-4-X44-M.
um211
HP436A
UM2101
UM2102
UM2104
UM2106
UM2108
UM2110
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Untitled
Abstract: No abstract text available
Text: PIN DIODE UM2100 SERIES FEATURES DESCRIPTION • HF band 2-30 MHz PIN • Long Lifetim e (25ns typ.) • High Power (1KW, CW) • High Isolation (32dB) U M 2100 Series PIN diodes are designed for transmit/receive switch and attenuator applications in HF band (2-30M H z) and below. As series configured
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UM2100
2-30M
re1235
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Untitled
Abstract: No abstract text available
Text: PIN DIODE UM2100 SERIES FEATURES • DESCRIPTION H F band 2 -3 0 M H z P IN U M 2 1 0 0 Series P IN diodes are designed for transm it/receive switch and attenuator applications in H F band (2 -3 0 M H z ) and below. As series configured • Long Lifetime (25ns typ.)
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UM2100
444-M
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