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    KEMET Corporation R76UN2110JJ00J

    11000 2000V |Kemet R76UN2110JJ00J
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    KEMET Corporation R76UN2110JE30J

    0,011U00 Vdv |Kemet R76UN2110JE30J
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    KEMET Corporation R76UN2110SE00X

    11000 2000V |Kemet R76UN2110SE00X
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    Newark R76UN2110SE00X Bulk 468
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    KEMET Corporation R76UN2110SE30H

    0,011U00 Vdv |Kemet R76UN2110SE30H
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    Qualcomm Atheros UN2110-UNAV

    IC, BGA
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    Quest Components UN2110-UNAV 100
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    UN2110 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    UN2110 Panasonic TRANS DIGITAL BJT PNP 50V 100MA 3MINI3-G1 Original PDF
    UN2110 Panasonic Silicon PNP epitaxial planer transistor Original PDF
    uN2110 Panasonic Integrated GPS baseband IC with reduced operating power and integrated 8Mbit flash memory Original PDF
    UN2110 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    UN2110 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    UN2110Q Panasonic TRANS DIGITAL BJT PNP 50V 100MA 3MINI3-G1 Original PDF
    UN2110-Q Panasonic SMD, Silicon PNP-transistor Original PDF
    UN2110R Panasonic TRANS DIGITAL BJT PNP 50V 100MA 3MINI3-G1 Original PDF
    UN2110S Panasonic TRANS DIGITAL BJT PNP 50V 100MA 3MINI3-G1 Original PDF

    UN2110 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    unr211

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR211x Series (UN211x Series) Silicon PNP epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 0.4±0.2 5˚ 2 1 (0.95) (0.95)


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    PDF 2002/95/EC) UNR211x UN211x UNR2110 UNR2111 UNR2112 UNR2113 UNR2114 UNR2115 UNR2116 unr211

    MIP2F3

    Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
    Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the


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    PDF PAMP13-N1 MIP2F3 MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


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    PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    UN2110

    Abstract: UNR2110 XN01110 XN1110
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN01110 (XN1110) Silicon PNP epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) • Basic Part Number 2 0.4±0.2 5 2.8+0.2 –0.3 • Two elements incorporated into one package


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    PDF 2002/95/EC) XN01110 XN1110) UN2110 UNR2110 XN01110 XN1110

    MTK3329

    Abstract: SiRFstarIV GSD4e Mediatek MT3329 chip sirfstar IV MT3329 GSD4e UP501 mediatek MT3329 Mediatek Gps Mt3329 mediatek
    Text: 9/2010 www.fastraxgps.com Receivers & Tracking products 01 UP5 W! NE 20 IT5 ! W NE ! 30 NEW IT4 Choose from the widest range of GPS receiver solutions in the world! FASTRAX PRODUCT MATRIX Product Description TTFF Sensivity acq./navig. Power consumption Dimensions mm


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    PDF 500-SERIES IT500 IT520 400-SERIES IT400-series IT500-series IT300-series IT03-series IT430 MTK3329 SiRFstarIV GSD4e Mediatek MT3329 chip sirfstar IV MT3329 GSD4e UP501 mediatek MT3329 Mediatek Gps Mt3329 mediatek

    UNR2110

    Abstract: UNR2111 UNR2112 UNR2113 UNR2114 UNR2115 UNR2116 UNR2117 UNR2118 UNR2119
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR211x Series (UN211x Series) Silicon PNP epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 5˚ ue pl d in an c se ed lud


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    PDF 2002/95/EC) UNR211x UN211x UNR2110 UNR2111 UNR2112 UNR2113 UNR2114 UNR2115 UNR2116 UNR2117 UNR2118 UNR2119

    alternator diode 1776 B

    Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
    Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)


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    PDF Hig86-755-3679515 alternator diode 1776 B 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent

    UN2110

    Abstract: UNR2110 XN04110 XN4110
    Text: Composite Transistors XN04110 XN4110 Silicon PNP epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 2 0.4±0.2 1 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number 2.8+0.2 –0.3 6 (0.65) • Two elements incorporated into one package


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    PDF XN04110 XN4110) UN2110 UNR2110 XN04110 XN4110

    UNR2119

    Abstract: UNR2110 UNR2111 UNR2112 UNR2113 UNR2114 UNR2115 UNR2116 UNR2117 UNR2118
    Text: Transistors with built-in Resistor UNR211x Series UN211x Series Silicon PNP epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Costs can be reduced through downsizing of the equipment and reduction of the number of parts


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    PDF UNR211x UN211x UNR2110 UNR2111 UNR2112 UNR2113 UNR2119 UNR2110 UNR2111 UNR2112 UNR2113 UNR2114 UNR2115 UNR2116 UNR2117 UNR2118

    UN2110

    Abstract: UNR2110 XP01110 XP1110
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP01110 (XP1110) Silicon PNP epitaxial planar type Unit: mm (0.425) For switching/digital circuits 0.20±0.05 5 0.12+0.05 –0.02 4 5˚ • Two elements incorporated into one package


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    PDF 2002/95/EC) XP01110 XP1110) UNR2110 UN2110) UN2110 UNR2110 XP01110 XP1110

    Untitled

    Abstract: No abstract text available
    Text: Composite Transistors XN04110 XN4110 Silicon PNP epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 2 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number 1.1+0.2 –0.1 Symbol Rating Unit Collector-base voltage (Emitter open) VCBO


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    PDF XN04110 XN4110)

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


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    PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    LM8550

    Abstract: KTD2026 2SC2320 equivalent NEC 12F DATASHEET 2N3904 MOTOROLA 2sc2240 equivalent 2N3906 MOTOROLA 2sc1983 2N5400 MOTOROLA 2SD1960
    Text: Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC 2N2222/A Motorola KTN2222/A 2SA1150 Toshiba KTA1272 2SA1510 Sanyo KRA1 10S 2SB546A NEC KTB 1369 2N2369/A Motorola KTN2369/A 2SA1151 NEC KTA1266 2SA1511 Sanyo KRA1 10M 2SB560 Sanyo


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    PDF 2N2222/A KTN2222/A 2SA1150 KTA1272 2SA1510 2SB546A 2N2369/A KTN2369/A 2SA1151 KTA1266 LM8550 KTD2026 2SC2320 equivalent NEC 12F DATASHEET 2N3904 MOTOROLA 2sc2240 equivalent 2N3906 MOTOROLA 2sc1983 2N5400 MOTOROLA 2SD1960

    UN2110

    Abstract: UNR2110 XN01110 XN1110
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN01110 (XN1110) Silicon PNP epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 0.16+0.10 –0.06 M Di ain sc te on na tin nc ue e/ d 2 1.1+0.2 –0.1


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    PDF 2002/95/EC) XN01110 XN1110) UN2110 UNR2110 XN01110 XN1110

    UN2111

    Abstract: ic 2115 ic 2114 UNR211N UNR2110 UNR2111 UNR2112 UNR2113 UNR2114 UNR2115
    Text: Transistors with built-in Resistor UNR21XX Series UN21XX Series Silicon PNP epitaxial planer transistor Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 0.4±0.2 2 1 (0.95) (0.95) 1.9±0.1 (0.65) • Costs can be reduced through downsizing of the equipment and


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    PDF UNR21XX UN21XX UN2111 ic 2115 ic 2114 UNR211N UNR2110 UNR2111 UNR2112 UNR2113 UNR2114 UNR2115

    ic 2113

    Abstract: UN2110 UN2111 UN2112 UN2113 UN2114 UN2115 UN2116 UN2117 UN2118
    Text: Transistors with built-in Resistor / 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z Silicon PNP epitaxial planer transistor For digital circuits +0.25 0.65±0.15 0.65±0.15 1.45 0.95 3 +0.1 0.4 –0.05


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    PDF E/211F/211H/211L/211M/211N/211T/211V/211Z UN2111 UN2112 UN2113 UN2114 UN2115 UN2116 UN2117 UN2118 ic 2113 UN2110 UN2111 UN2112 UN2113 UN2114 UN2115 UN2116 UN2117 UN2118

    2SC5936

    Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
    Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


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    PDF XP06501T XP06531 XP06545 XP0A554 XP0D873 XP0D874 XP0D875 2SC5936 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928

    MTK3329

    Abstract: sirf GSC3f/LPx sirfstar 3 MTk3318 mediatek mediatek mt3318 sirfstar 3 commands UP500 gsc3e GPS receiver module
    Text: T50 I 00 UP5 GPS ! W NE Receivers & Tracking products www.fastraxgps.com ! W NE 10/2009 FASTRAX PRODUCT MATRIX Product Description TTFF Sensivity acq./navig. Power consumption Dimensions mm -148 dBm / -165 dBm 75mW@3.0V 16.2 x 18.8 x 2.3 NMEA Protoc FASTRAX 500-SERIES FOR ULTIMATE SENSITIVITY


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    PDF 500-SERIES IT500 300-SERIES IT321 IT310 UC324 IT300-series IT500-series IT03-series IT300 MTK3329 sirf GSC3f/LPx sirfstar 3 MTk3318 mediatek mediatek mt3318 sirfstar 3 commands UP500 gsc3e GPS receiver module

    2SA1015

    Abstract: 2SA1091 2SA1371 2SA562TM 2SB548 2SB814 2SA1243 2SB642 2SB793 2SA1306A
    Text: - 34 - m s Type No. £ M a n u f. 2SA 1535 , tö T 2SA 1535A tö T = * SANYO 2SB1037 X 3E TOSHIBA B 'S NEC 1 Tn« B tL HITACHI H ± il FUJITSU tö T MATSUSHITA — M MITSUBISHI 2SB649A = 2SA 1542 □—A 2SA 1543 □— A 2SA1015 2SB642 2SA 1544 b m. 2SA1624


    OCR Scan
    PDF 2SB1037 2SB649A 2SB1186A 2SA1306A 2SB1186B 2SB548 2SB1314 2SA1783 2SA1015 2SA733 2SA1091 2SA1371 2SA562TM 2SB548 2SB814 2SA1243 2SB642 2SB793 2SA1306A

    SS2205

    Abstract: 2SA1628 2SB814 HSI 527 2SA1284 2SA1178 2SA1283 2SA1586 2SB1043 2SA934
    Text: 33 tt « Manuf. ft 3 SANYO M TOSHIBA m « T y p e No. o a ED - ±L HITACHI S ± FUJITSU 35 ta T DTA123YS 1505 n m w * 2SA 1506 m w m ,^ 2SA 1 507 , 2SA 1508 2SA 1509 2SA 1510 ' 2SA 1511 /• = ft 2SA 1512 & T 2SA 1 5 1 3 -■ a 2SA 1514 □ - A 2SA1257 2S A 1 1 6 3


    OCR Scan
    PDF SS2205 UN411H RT1P234S DTA123YS 2SA1781 2SA1162 2SB736 2SB709A 2SA1235 2SA1753 SS2205 2SA1628 2SB814 HSI 527 2SA1284 2SA1178 2SA1283 2SA1586 2SB1043 2SA934

    RTIP144C

    Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
    Text: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.


    OCR Scan
    PDF 2SB1186 2SB1186A 2SA1304 2SA1306 2SA1305 2SB1274 2SB1015 2SB1133 2SB1287 2SB1185 RTIP144C RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C

    3866S

    Abstract: transistor a999 bs 7818 -1995 transistor tt 2206 A999 transistor TT 2206 transistor a1535A 8340UAS transistor 3866S 2SD 4515
    Text: H Integrated Circuits MOS LSIs Page MOS LSI Type No. Page Type No. Page Type No. Page Type No. Page M N 171608 42 A M N 18P73210 43 M N 3210 69 M N 5179/H 91 M N 171609 42 AM N 18P73215 43 M N 3214 69 MN5181 91 M N 3102 69 M N 53 00 0 Series 55 M N 33 00 Series


    OCR Scan
    PDF 1020G N12861 N12B62 MN1381 MN13811 MN13821 15P0802 15P5402 58851A 70803A 3866S transistor a999 bs 7818 -1995 transistor tt 2206 A999 transistor TT 2206 transistor a1535A 8340UAS transistor 3866S 2SD 4515

    2SC144

    Abstract: 2SD466 2sc5266
    Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


    OCR Scan
    PDF T258-OMI FAX06 2SC144 2SD466 2sc5266

    UN7000

    Abstract: UN8000 UN9110 UNR921CJ UN1219 un4115 un1211
    Text: Pakage No. Rb Ik Q ) Rst <kO) New S Type(D34) S-Mini Type(D5) M Type{D35) Mini Type(D12) (Pc =400m W , 600mW M 1W '2) (Pc = 200mW) (Pc=300m W ) (Pc — 150mW) PNP PNP NPN PNP MT1 Type(D37) (Pc =400m W , 600mW*1 ) Mini-Power MT2 Type(D38) (P c= 1W ) (Pc=125m W )


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    PDF UN1000 600mW UN2000 200mW) N2111 UN2112 UN2113 UN2114 UN2115 UN2116 UN7000 UN8000 UN9110 UNR921CJ UN1219 un4115 un1211