UN2110
Abstract: UNR2110 XN04110 XN4110
Text: Composite Transistors XN04110 XN4110 Silicon PNP epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 2 0.4±0.2 1 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number 2.8+0.2 –0.3 6 (0.65) • Two elements incorporated into one package
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XN04110
XN4110)
UN2110
UNR2110
XN04110
XN4110
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Untitled
Abstract: No abstract text available
Text: Composite Transistors XN04110 XN4110 Silicon PNP epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 2 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number 1.1+0.2 –0.1 Symbol Rating Unit Collector-base voltage (Emitter open) VCBO
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XN04110
XN4110)
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UN2110
Abstract: UNR2110 XN04110 XN4110
Text: Composite Transistors XN04110 XN4110 Silicon PNP epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) M Di ain sc te on na tin nc ue e/ d 6 2 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number Parameter Collector-base voltage (Emitter open)
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XN04110
XN4110)
SC-74
UN2110
UNR2110
XN04110
XN4110
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UN1110
Abstract: UNR1110 XN04110 XN4110
Text: Composite Transistors XN04110 XN4110 Silicon PNP epitaxial planar transistor Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 6 3 2 1 (0.65) • Two elements incorporated into one package (Transistors with builtin resistor) • Reduction of the mounting area and assembly cost by one half
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XN04110
XN4110)
UNR1110
UN1110)
UN1110
UNR1110
XN04110
XN4110
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