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    UN211M Search Results

    UN211M Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    UN211M Panasonic Silicon PNP epitaxial planer transistor Original PDF
    UN211M Panasonic Silicon PNP epitaxial planer transistor Original PDF
    UN211M Panasonic TRANS DIGITAL BJT PNP 50V 100MA 3MINI3-G1 Original PDF
    UN211M Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    UN211M Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF

    UN211M Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    UN211M

    Abstract: XP0111M
    Text: Composite Transistors XP0111M Silicon PNP epitaxial planer transistor Unit: mm 0.2±0.05 For switching/digital circuits 2.1±0.1 1 2 1.25±0.1 0.425 5 3 4 +0.05 0.9± 0.1 UN211M x 2 elements 0 to 0.1 ● 0.7±0.1 • Basic Part Number of Element 0.12 – 0.02


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    PDF XP0111M UN211M UN211M XP0111M

    UN211M

    Abstract: UNR211M XN0111M XN111M
    Text: Composite Transistors XN0111M XN111M PNP epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UNR211M(UN211M) x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element


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    PDF XN0111M XN111M) UNR211M UN211M) UN211M XN0111M XN111M

    UN211M

    Abstract: XP0111M
    Text: Composite Transistors XP0111M Silicon PNP epitaxial planer transistor Unit: mm 0.2±0.05 For switching/digital circuits 2.1±0.1 1 2 1.25±0.1 0.425 5 3 4 +0.05 0.9± 0.1 UN211M x 2 elements 0 to 0.1 ● 0.7±0.1 • Basic Part Number of Element 0.12 – 0.02


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    PDF XP0111M UN211M UN211M XP0111M

    UN211M

    Abstract: XN111M
    Text: Composite Transistors XN111M PNP epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UN211M x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element 0.16 -0.06


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    PDF XN111M UN211M UN211M XN111M

    unr211

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR211x Series (UN211x Series) Silicon PNP epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 0.4±0.2 5˚ 2 1 (0.95) (0.95)


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    PDF 2002/95/EC) UNR211x UN211x UNR2110 UNR2111 UNR2112 UNR2113 UNR2114 UNR2115 UNR2116 unr211

    MIP2F3

    Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
    Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the


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    PDF PAMP13-N1 MIP2F3 MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


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    PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    UNR211M

    Abstract: UN211M XN0111M XN111M
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN0111M (XN111M) Silicon PNP epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) • Basic Part Number 2 0.4±0.2 5 2.8+0.2 –0.3 • Two elements incorporated into one package


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    PDF 2002/95/EC) XN0111M XN111M) UNR211M UN211M XN0111M XN111M

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP0111M Silicon PNP epitaxial planar type Unit: mm (0.425) For switching/digital circuits 0.20±0.05 5 0.12+0.05 –0.02 4 5˚ • Two elements incorporated into one package


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    PDF 2002/95/EC) XP0111M UNR211M UN211M)

    UNR2110

    Abstract: UNR2111 UNR2112 UNR2113 UNR2114 UNR2115 UNR2116 UNR2117 UNR2118 UNR2119
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR211x Series (UN211x Series) Silicon PNP epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 5˚ ue pl d in an c se ed lud


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    PDF 2002/95/EC) UNR211x UN211x UNR2110 UNR2111 UNR2112 UNR2113 UNR2114 UNR2115 UNR2116 UNR2117 UNR2118 UNR2119

    alternator diode 1776 B

    Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
    Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)


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    PDF Hig86-755-3679515 alternator diode 1776 B 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent

    UNR2119

    Abstract: UNR2110 UNR2111 UNR2112 UNR2113 UNR2114 UNR2115 UNR2116 UNR2117 UNR2118
    Text: Transistors with built-in Resistor UNR211x Series UN211x Series Silicon PNP epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Costs can be reduced through downsizing of the equipment and reduction of the number of parts


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    PDF UNR211x UN211x UNR2110 UNR2111 UNR2112 UNR2113 UNR2119 UNR2110 UNR2111 UNR2112 UNR2113 UNR2114 UNR2115 UNR2116 UNR2117 UNR2118

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN0111M (XN111M) Silicon PNP epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) • Basic Part Number 2 0.4±0.2 1 0.30+0.10 –0.05 di p Pl lan nclu


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    PDF 2002/95/EC) XN0111M XN111M)

    LM8550

    Abstract: KTD2026 2SC2320 equivalent NEC 12F DATASHEET 2N3904 MOTOROLA 2sc2240 equivalent 2N3906 MOTOROLA 2sc1983 2N5400 MOTOROLA 2SD1960
    Text: Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC 2N2222/A Motorola KTN2222/A 2SA1150 Toshiba KTA1272 2SA1510 Sanyo KRA1 10S 2SB546A NEC KTB 1369 2N2369/A Motorola KTN2369/A 2SA1151 NEC KTA1266 2SA1511 Sanyo KRA1 10M 2SB560 Sanyo


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    PDF 2N2222/A KTN2222/A 2SA1150 KTA1272 2SA1510 2SB546A 2N2369/A KTN2369/A 2SA1151 KTA1266 LM8550 KTD2026 2SC2320 equivalent NEC 12F DATASHEET 2N3904 MOTOROLA 2sc2240 equivalent 2N3906 MOTOROLA 2sc1983 2N5400 MOTOROLA 2SD1960

    UN211M

    Abstract: UNR211M XN0111M XN111M
    Text: Composite Transistors XN0111M XN111M PNP epitaxial planer transistor Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) ● 5 Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.


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    PDF XN0111M XN111M) UNR211M UN211M) UN211M XN0111M XN111M

    UN2111

    Abstract: ic 2115 ic 2114 UNR211N UNR2110 UNR2111 UNR2112 UNR2113 UNR2114 UNR2115
    Text: Transistors with built-in Resistor UNR21XX Series UN21XX Series Silicon PNP epitaxial planer transistor Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 0.4±0.2 2 1 (0.95) (0.95) 1.9±0.1 (0.65) • Costs can be reduced through downsizing of the equipment and


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    PDF UNR21XX UN21XX UN2111 ic 2115 ic 2114 UNR211N UNR2110 UNR2111 UNR2112 UNR2113 UNR2114 UNR2115

    ic 2113

    Abstract: UN2110 UN2111 UN2112 UN2113 UN2114 UN2115 UN2116 UN2117 UN2118
    Text: Transistors with built-in Resistor / 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z Silicon PNP epitaxial planer transistor For digital circuits +0.25 0.65±0.15 0.65±0.15 1.45 0.95 3 +0.1 0.4 –0.05


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    PDF E/211F/211H/211L/211M/211N/211T/211V/211Z UN2111 UN2112 UN2113 UN2114 UN2115 UN2116 UN2117 UN2118 ic 2113 UN2110 UN2111 UN2112 UN2113 UN2114 UN2115 UN2116 UN2117 UN2118

    2SC5936

    Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
    Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


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    PDF XP06501T XP06531 XP06545 XP0A554 XP0D873 XP0D874 XP0D875 2SC5936 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928

    UNR2110

    Abstract: UNR2111 UNR2112 UNR2113 UNR2114 UNR2115 UNR2116 UNR2117 UNR2118 UNR2119
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR211x Series (UN211x Series) Silicon PNP epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Costs can be reduced through downsizing of the equipment and


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    PDF 2002/95/EC) UNR211x UN211x UNR2110 UNR2111 UNR2112 UNR2113 UNR2114 UNR2115 UNR2116 UNR2117 UNR2118 UNR2119

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP0411M (XP411M) Silicon PNP epitaxial planar type 0.2±0.05 6 Unit: mm (0.425) For switching/digital circuits 5 0.12+0.05 –0.02 4 5˚ • Two elements incorporated into one package


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    PDF 2002/95/EC) XP0411M XP411M) UNR211M UN211M)

    2-11d

    Abstract: UNR2110 UNR2111 UNR2112 UNR2113 UNR2114 UNR2115 UNR2116 UNR2117 UNR2118
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR211x Series (UN211x Series) Silicon PNP epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 5˚ Th an W is k y Th e a pro ou


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    PDF 2002/95/EC) UNR211x UN211x 2-11d UNR2110 UNR2111 UNR2112 UNR2113 UNR2114 UNR2115 UNR2116 UNR2117 UNR2118

    SC59A

    Abstract: SC-59A RT1N441C RT1P441M RT1N434S RT1P441C RT1P441S UN111E UN111H UN112X
    Text: - 336 - Ta=25t , *Ef][iTc=25‘ C) m z tt ICvDC) « (V) RT1P434S RT1P441C =m =M RT1P441M HS RTÌP441S H S UN111D UN211H ♦ST ♦ST ♦ST ♦ST ♦ST ♦ST ♦ST ♦ST ♦ST ♦ST ♦ st ♦ST ♦ST ♦ST ♦ST ♦ST UN 2 i1L ft; UN211M UN111E U N I I IF


    OCR Scan
    PDF RT1P134S RT1P441C T1P441M RT1P441S N111D UN111E SC-59A UN212Y 47K/10K UN211D SC59A RT1N441C RT1P441M RT1N434S UN111E UN111H UN112X

    3866S

    Abstract: transistor a999 bs 7818 -1995 transistor tt 2206 A999 transistor TT 2206 transistor a1535A 8340UAS transistor 3866S 2SD 4515
    Text: H Integrated Circuits MOS LSIs Page MOS LSI Type No. Page Type No. Page Type No. Page Type No. Page M N 171608 42 A M N 18P73210 43 M N 3210 69 M N 5179/H 91 M N 171609 42 AM N 18P73215 43 M N 3214 69 MN5181 91 M N 3102 69 M N 53 00 0 Series 55 M N 33 00 Series


    OCR Scan
    PDF 1020G N12861 N12B62 MN1381 MN13811 MN13821 15P0802 15P5402 58851A 70803A 3866S transistor a999 bs 7818 -1995 transistor tt 2206 A999 transistor TT 2206 transistor a1535A 8340UAS transistor 3866S 2SD 4515

    UN7000

    Abstract: UN8000 UN9110 UNR921CJ UN1219 un4115 un1211
    Text: Pakage No. Rb Ik Q ) Rst <kO) New S Type(D34) S-Mini Type(D5) M Type{D35) Mini Type(D12) (Pc =400m W , 600mW M 1W '2) (Pc = 200mW) (Pc=300m W ) (Pc — 150mW) PNP PNP NPN PNP MT1 Type(D37) (Pc =400m W , 600mW*1 ) Mini-Power MT2 Type(D38) (P c= 1W ) (Pc=125m W )


    OCR Scan
    PDF UN1000 600mW UN2000 200mW) N2111 UN2112 UN2113 UN2114 UN2115 UN2116 UN7000 UN8000 UN9110 UNR921CJ UN1219 un4115 un1211