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    UPA810T Price and Stock

    California Eastern Laboratories (CEL) UPA810T-A

    RF TRANS 2 NPN 12V 4.5GHZ SOT363
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    California Eastern Laboratories (CEL) UPA810T-T1

    RF TRANS 2 NPN 12V 4.5GHZ 6SO
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    California Eastern Laboratories (CEL) UPA810T-T1-A

    NPN SILICON AMPLIFIER AND OSCILL
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    DigiKey UPA810T-T1-A Reel 3,000
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    UPA810T-T1-A Reel
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    Verical UPA810T-T1-A 1,260 11
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    Arrow Electronics UPA810T-T1-A Cut Strips 1,260 10 Weeks 1
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    UPA810T Datasheets (19)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    UPA810T California Eastern Laboratories Npn Silicon High Frequency Transistor Original PDF
    UPA810T NEC Consumer-use Ultra-high Frequency Bipolar Transistor Original PDF
    UPA810T NEC NPN silicon high frequency transistor. Original PDF
    uPA810T NEC HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 6-PIN 2 x 2SC4226 Original PDF
    UPA810T-A California Eastern Laboratories RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN 4.5GHZ SOT363 Original PDF
    UPA810T-A California Eastern Laboratories NPN SILICON HIGH FREQUENCY TRANSISTOR Original PDF
    UPA810TC NEC NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD Original PDF
    uPA810TC NEC NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 x 2SC5006) FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER M Original PDF
    UPA810TC-T1 NEC NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD Original PDF
    UPA810TF NEC NPN SILICON HIGH FREQUENCY TRANSISTOR Original PDF
    UPA810TF NEC Consumer-use Ultra-high Frequency Bipolar Transistor Original PDF
    uPA810TFB-T1 NEC High-Frequency Low Noise Amplifier NPN Silicon Epitaxial Transistor (with Built-in 6-Pin 2 x 2SC4226) Small Mini Mold Original PDF
    uPA810TGB NEC High-Frequency Low Noise Amplifier NPN Silicon Epitaxial Transistor (with Built-in 6-Pin 2 x 2SC4226) Small Mini Mold Original PDF
    UPA810T-T1 California Eastern Laboratories RF Transistors (BJT), Discrete Semiconductor Products, TRANS NPN HF FT=4.5GHZ SOT-363 Original PDF
    UPA810T-T1 California Eastern Laboratories NPN SILICON HIGH FREQUENCY TRANSISTOR Original PDF
    UPA810T-T1 NEC Consumer-use Ultra-high Frequency Bipolar Transistor Original PDF
    uPA810T-T1 NEC HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 6-PIN 2 x 2SC4226 Original PDF
    UPA810T-T1-A California Eastern Laboratories RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN FT=4.5GHZ SOT363 Original PDF
    UPA810T-T1-A California Eastern Laboratories NPN SILICON HIGH FREQUENCY TRANSISTOR Original PDF

    UPA810T Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR UPA810TC FEATURES DESCRIPTION • SMALL PACKAGE OUTLINE: 1.5 mm x 1.1 mm, 33% smaller than conventional SOT-363 package • LOW HEIGHT PROFILE: Just 0.55 mm high • FLAT LEAD STYLE: Reduced lead inductance improves electrical


    Original     		PDF OT-363 UPA810TC UPA810TC NE856 UPA810TC-T1, 24-Hour

    NE856

    Abstract: S21E UPA810TC UPA810TC-T1
    Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR UPA810TC FEATURES DESCRIPTION • SMALL PACKAGE OUTLINE: 1.5 mm x 1.1 mm, 33% smaller than conventional SOT-363 package • LOW HEIGHT PROFILE: Just 0.55 mm high • FLAT LEAD STYLE: Reduced lead inductance improves electrical


    Original     		PDF UPA810TC OT-363 UPA810TC NE856 UPA810TC-T1, 24-Hour S21E UPA810TC-T1

    NE856

    Abstract: S21E UPA810T UPA810TF chip die npn transistor
    Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA810TF OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE OUTLINE: SOT-363 package measures just 2 mm x 1.25 mm • LOW HEIGHT PROFILE: Just 0.60 mm hight • HIGH COLLECTOR CURRENT: IC MAX = 100 mA


    Original     		PDF UPA810TF OT-363 UPA810TF NE856 UPA810TF-T1, 24-Hour S21E UPA810T chip die npn transistor

    OF transistor 13

    Abstract: ultra low noise NPN transistor
    Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR UPA810T NPN SILICON HIGH FREQUENCY TRANSISTOR OUTLINE DIMENSIONS Units in mm FEATURES • • • • • PACKAGE OUTLINE S06 (Top View) SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package 2.1 ± 0.1 LOW NOISE FIGURE:


    Original     		PDF UPA810T NE856 UPA810T UPA810T-T1 UPA810T-A UPA810T-T1-A OF transistor 13 ultra low noise NPN transistor

    UPA810T-T1-A

    Abstract: NE856 S21E UPA810T UPA810T-A UPA810T-T1 ultra low noise NPN transistor
    Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR UPA810T NPN SILICON HIGH FREQUENCY TRANSISTOR OUTLINE DIMENSIONS Units in mm FEATURES • SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz • HIGH GAIN:


    Original     		PDF UPA810T NE856 UPA810T UPA810T-T1-A S21E UPA810T-A UPA810T-T1 ultra low noise NPN transistor

    transistor

    Abstract: UPA810T-A UPA810T-T1-A NE856 S21E UPA810T UPA810T-T1
    Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR UPA810T NPN SILICON HIGH FREQUENCY TRANSISTOR OUTLINE DIMENSIONS Units in mm FEATURES • SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz • HIGH GAIN:


    Original     		PDF UPA810T NE856 UPA810T transistor UPA810T-A UPA810T-T1-A S21E UPA810T-T1

    cascode transistor array VCO

    Abstract: UPA807T RF transistors with s-parameters UPA802T cascode transistor array AN1028 S21E UPA806T UPA808T transistor RF S-parameters
    Text: California Eastern Laboratories APPLICATION NOTE AN1028 Testing Dual-Chip Transistor Arrays for VCO/Buffer Amp Combinations and Two-Stage Amplifier Applications I. Introduction Designers of handheld wireless products share common goals: higher performance, smaller size, and lower costs. Usually


    Original     		PDF AN1028 UPA808T cascode transistor array VCO UPA807T RF transistors with s-parameters UPA802T cascode transistor array AN1028 S21E UPA806T transistor RF S-parameters

    FET marking code g5d

    Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
    Text: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


    Original     		PDF R09CL0001EJ0100 PX10727EJ02V0PF) FET marking code g5d PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic

    nec mosfet marked v75

    Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original     		PDF G0706 PX10727EJ02V0PF nec mosfet marked v75 NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77

    2SK2500

    Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
    Text: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose


    Original     		PDF

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original     		PDF GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2

    SMD M05 sot23

    Abstract: NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404
    Text: 2013-2014 RF & Wireless Semiconductors P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories CEL is the exclusive sales and marketing partner in the Americas for products made by the Compound Semiconductor Devices Business Division (CSDBD) of Renesas Electronics Corporation, formerly


    Original     		PDF 2013/4M SMD M05 sot23 NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404

    ne3511s02 s2p

    Abstract: ne3512s02 s2p SMD M05 sot SMD transistor M05 S06 SMD UPG2162T5N ne3210s01 NE321000 QFN2020 UPG2250T5N
    Text: 2007 California Eastern Laboratories HEADQUARTERS U.S. REPS INTERNATIONAL REPS CEL 4590 Patrick Henry Drive Santa Clara CA 95054 Tel: 408 919-2500 Fax: (408) 988-0279 www.cel.com Northwest Disman Bakner (800) 347-3010 Canada BC, Alberta, Saskatchewan


    Original     		PDF 07/2M 847Indiana/Kentucky ne3511s02 s2p ne3512s02 s2p SMD M05 sot SMD transistor M05 S06 SMD UPG2162T5N ne3210s01 NE321000 QFN2020 UPG2250T5N

    m33 tf 130

    Abstract: NESG204619 NESG2046 NESG2030M042 NESG2101M05 NE68030 NE68033 NE68039 NE68133 NE68539
    Text: www.cel.com NEC Small Signal Silicon Bipolar Transistors For Low Current, Low Voltage Applications Part Number TEST f GHz NF/GA VCE ICQ (V) (mA) MAG / MSG NF GA TYP TYP VCE IC TYP (dB) (dB) (V) (mA) (dB) fT TYP hFE (GHz) TYP


    Original     		PDF NE68039 NE68139 NE68539 NE85639 OT-143 ne68000 ne68100 ne85600 UPA862TD NE894 m33 tf 130 NESG204619 NESG2046 NESG2030M042 NESG2101M05 NE68030 NE68033 NE68039 NE68133 NE68539

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz • HIGH GAIN: |S21E|2 = 9.0 dB TYP at 1 GHz


    Original     		PDF NE856 UPA810T UPA810T UPA810T-T1, 24-Hour

    SMD transistor M05

    Abstract: smd TRANSISTOR code m05 wy smd transistor UPD5740 NE66200 TRANSISTOR m05 smd UPD5740T6N UPG2159T6R SMD transistor M05 driver 50 VOLTS 5 amp smd sot-89 TRANSISTOR
    Text: NEC XXXXXXXXXX RF & Wireless Semiconductors 2010 2 P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories serves designers, OEMs and contract manufacturers in the RF & Wireless, Mobilecomm, Multimedia, Broadband Communications, Industrial Control, and Automated Test Equipment ATE


    Original     		PDF 10/2M SMD transistor M05 smd TRANSISTOR code m05 wy smd transistor UPD5740 NE66200 TRANSISTOR m05 smd UPD5740T6N UPG2159T6R SMD transistor M05 driver 50 VOLTS 5 amp smd sot-89 TRANSISTOR

    BB 509 varicap diode

    Abstract: BLF6G22L ON503 tea6849 bf1107 spice model PIN diode ADS model ULTRA FAST DIODES SANYO catalog RF MANUAL diode varicap BB 112 adi cmos bipolar SiGe
    Text: UNLEASH RF RF Manual 17 edition th Application and design manual for High Performance RF products June 2013 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s


    Original     		PDF

    mc10087f1

    Abstract: mc-10041 mc-10043 MC-10087F1-XXX MC-10044 MC-10051BF1 2SC5664 2SC5292 UPC1701C mc-10059
    Text: 1／89 Lead-free Semiconductor Product Conditions Renesas Electronics Lead-free Semiconductor Product Conditions August 17, 2010 1.Please inquire of Renesas Electronics sales person about lead-free product status while is not listed in the following table.


    Original     		PDF IR260/WS260/HS350 IR260/HS350 mc10087f1 mc-10041 mc-10043 MC-10087F1-XXX MC-10044 MC-10051BF1 2SC5664 2SC5292 UPC1701C mc-10059

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA810T OUTLINE DIMENSIONS u n its m m m SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package PACKAGE OUTLINE S06 (Top View) LOW NOISE FIGURE: NF = 1.2 dBTYP at 1 GHz HIGH GAIN:


    OCR Scan     		PDF NE856 UPA810T UPA810T UPA810T-T1,

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR ¿¿PA81OT HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC4226 SMALL MINI MOLD The ¿¡PA810T has built-in 2 low-voltage transistors w hich are designed to PACKAGE DRAW INGS


    OCR Scan     		PDF PA81OT 2SC4226) PA810T uPA810T pro00

    UPA802T

    Abstract: BD304 NE02132
    Text: Low Noise Bipolar Transistors ' •TV#’ VCE V S x n l* Ic TYP (mA) (dB) * VIP Hn te TYP MAX (WAJ Package Pfcg. Faxon Dwnand ücloaning Dee No. DUAL BIPOLAR TRANSISTORS UPA800T 2.0 3 5 1.9 - 3 .5 7.5 8.0 120 35 (SOT-363) S06 D MEVO UPA801T 2.0 3 7 1.2 -


    OCR Scan     		PDF UPA800T UPA801T UPA802T UPA806T UPA807T UPA808T UPA809T UPA810T OT-363) BD304 NE02132

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES_ • SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz • HIGH GAIN: |S21 E|2 = 9.0 dB TYP at 1 GHz •


    OCR Scan     		PDF NE856 UPA810T UPA810T 810T-T1, 24-Hour

    TI 9023 IC data

    Abstract: 2SC4226 APPLICATION NOTES
    Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR uPA81 OT HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC4226 SMALL MINI MOLD The /xPA81 OT has built-in 2 low-voltage transistors which are designed to PACKAGE DRAW INGS


    OCR Scan     		PDF uPA810T 2SC4226) /xPA81 TI 9023 IC data 2SC4226 APPLICATION NOTES