Prescalers
Abstract: UPB582C uPG506 UPG503 UPG506P UPG502 uPB584 UPB584G UPB585G AN1014
Text: California Eastern Laboratories AN1014 APPLICATION NOTE Suppression of Prescaler Self-Oscillation NEC/CEL offers a broad range of silicon and GaAs MMIC prescalers. Prescalers are integrated circuits designed to generate an output signal at a frequency which is an
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AN1014
UPB585B
24-Hour
Prescalers
UPB582C
uPG506
UPG503
UPG506P
UPG502
uPB584
UPB584G
UPB585G
AN1014
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Prescalers
Abstract: UPB585 uPG506 UPB584G UPB581 UPB582C UPG506B AN1014 UPB582 UPB584
Text: California Eastern Laboratories AN1014 APPLICATION NOTE Suppression of Prescaler Self-Oscillation NEC/CEL offers a broad range of silicon and GaAs MMIC prescalers. Prescalers are integrated circuits designed to generate an output signal at a frequency which is an
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Original
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AN1014
UPB585B
Prescalers
UPB585
uPG506
UPB584G
UPB581
UPB582C
UPG506B
AN1014
UPB582
UPB584
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BF08
Abstract: UPG504B UPG504P
Text: 9 GHz DIVIDE-BY-2 DYNAMIC PRESCALER OUTLINE DIMENSIONS FEATURES • WIDE OPERATING FREQUENCY RANGE: fiN = UPG504B UPG504P 2.0 to 9.0 GHz OUTLINE BF08 = 25°C T a (Units in mm) • LOW POWER DISSIPATION • DIVISION RATIO OF 2 • GUARANTEED OPERATING TEMPERATURE OVER
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UPG504B
UPG504P
UPG504B/P
UPG504B,
BF08
UPG504P
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Untitled
Abstract: No abstract text available
Text: NEC 9 GHz DIVIDE-BY-2 DYNAMIC PRESCALER UPG504B UPG504P OUTLINE DIMENSIONS FEATURES • WIDE OPERATING FREQUENCY RANGE: Units in mm OUTLINE BF08 fiN = 2.0 to 9.0 GHz (Ta = 25°C) • LOW POWER DISSIPATION 1.7 MAX • DIVISION RATIO OF 2 • GUARANTEED OPERATING TEMPERATURE OVER
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UPG504B
UPG504P
UPG504B/P
UPG504B,
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uPG504
Abstract: uPG503
Text: 9 GHz DIVIDE-BY-2 DYNAMIC PRESCALER UPG504B UPG504P INPUT POWER vs. INPUT FREQUENCY FEATURES • WIDE OPERATING FREQUENCY RANGE: fiN = 2.0 to 9.0 GHz Ta = 25°C • DIVISION RATIO OF 2 E • GUARANTEED OPERATING TEMPERATURE RANGE: 25°C to +75°C m 3z Q-
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UPG504B
UPG504P
UPG504B/P
UPG504
UPG503,
uPG503
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SVI 3104 c
Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or
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AN83301-1
NE24615
AN83302
AN83303-1
NE71083
NE70083
AN83901
AN85301
11/86-LN
AN86104
SVI 3104 c
UPC1678G
ne333
stb 1277 TRANSISTOR equivalent
transistor bf 175
NE85635 packaging schematic
NE72000 VC
svi 3104
NE9000
NE720
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prescaler 120 ghz
Abstract: BF08 uPG504 5 GHz DIVIDE-BY-2 STATIC PRESCALER UPG100B
Text: GaAs MMIC Selection Guide WIDEBAND AMPLIFIERS Electrisai Characteristics @ Ta « 25°C Test Conditions Gain dB NF (dB) Pan Frequency Ruga AG (dB) Number (GHz) IP G 1 0 0 B 0.05 to 3.0 V dd = +5V VGG = -5V 16 ±1.5 2.7 IP G 1 0 1 B 0.05 to 3.0 V dd = +8V
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