Part Marking Information
Abstract: No abstract text available
Text: Part Marking Information www.vishay.com Vishay Semiconductors D-PAK Part number xxxxxxx V This is a xxxxxxx with assembly lot code YYYY, assembled on WW 12, 2011 in the assembly line “C” P112C YYYY Assembly lot code Example: Product version optional :
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P112C
05-Mar-15
Part Marking Information
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marking code PB
Abstract: rohs-compliant
Text: Part Marking Information www.vishay.com Vishay Semiconductors D-PAK Part number xxxxxxx A Assembly lot code V Example: 1 A This is a xxxxxxx with assembly lot code YYYY, assembled on WW 12, 2000 in the assembly line “C” Z012C Product version (optional):
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Z012C
AEC-Q101
01-Jun-12
marking code PB
rohs-compliant
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P012C
Abstract: No abstract text available
Text: Part Marking Information www.vishay.com Vishay Semiconductors D-PAK Part number xxxxxxx V Revision: 04-Nov-11 This is a xxxxxxx with assembly lot code YYYY, assembled on WW 12, 2011 in the assembly line “C” P012C YYYY Assembly lot code Example: Product version optional :
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P012C
04-Nov-11
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Part Marking Information
Abstract: No abstract text available
Text: Part Marking Information Vishay Semiconductors D-PAK E Part number Example: xxxxxxx V This is a xxxxxxx with assembly lot code YYYY, assembled on WW 12, 2000 in the assembly line “C” Z012C YYYY Assembly lot code Product version optional : Z (replaced according below table)
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Z012C
02-May-11
Part Marking Information
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Untitled
Abstract: No abstract text available
Text: Part Marking Information Vishay High Power Products D-PAK E Part number Example: xxxxxxx V This is a xxxxxxx with assembly lot code YYYY, assembled on WW 12, 2000 in the assembly line “C” Z012C YYYY Assembly lot code Product version optional : Z (replaced according below table)
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Z012C
29-Apr-09
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k72 sot-23
Abstract: sot-23 Marking KN 72k SOT23 k72 r4 UM6K1 SI2302 SI2303
Text: TM Micro Commercial Components MOSFETS MCC Part Number Power Rating DrainSource Voltage Gate Threshold Voltage Drain Current Static DrainSource On Resistance PD VDS VGS ID rDS on (mW) V V mA Ω Polarity Marking Code Package Type Internal Diagram SMALL SIGNAL MOSFETS
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2N7002DW
OT-363
2N7002T
2SK3019
OT-523
2N7002KW
2N7002W
2SK3018
O-251
k72 sot-23
sot-23 Marking KN
72k SOT23
k72 r4
UM6K1
SI2302
SI2303
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mosfet marking code c0
Abstract: TSM4NB65
Text: TSM4NB65 650V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω)(max) ID (A) 650 3.37 @ VGS =10V 4 General Description TO-251 (IPAK) The TSM4NB60 N-Channel Power MOSFET is TO-252 (DPAK) produced by new advance planar process. This
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TSM4NB65
O-220
ITO-220
O-251
TSM4NB60
O-252
mosfet marking code c0
TSM4NB65
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Untitled
Abstract: No abstract text available
Text: TSM4NB60 600V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 600 2.5 @ VGS =10V 4 General Description TO-251 (IPAK) The TSM4NB60 N-Channel Power MOSFET is TO-252 (DPAK) produced by new advance planar process. This
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TSM4NB60
O-220
ITO-220
O-251
TSM4NB60
O-252
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TSM4NB60CP
Abstract: No abstract text available
Text: TSM4NB60 600V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 600 2.5 @ VGS =10V 4 General Description TO-251 (IPAK) The TSM4NB60 N-Channel Power MOSFET is TO-252 (DPAK) produced by new advance planar process. This
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TSM4NB60
O-220
ITO-220
O-251
TSM4NB60
O-252
TSM4NB60CP
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Untitled
Abstract: No abstract text available
Text: TSM3N90 900V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 900 5.1 @ VGS =10V 1.25 General Description TO-251 (IPAK) The TSM3N90 TO-252 (DPAK) N-Channel Power MOSFET is produced by new advance planar process. This
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TSM3N90
O-220
ITO-220
O-251
O-252
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marking A07
Abstract: TS1086 voltage regulator sot 223 18BSC marking code cp sot-223 code marking
Text: TS1086 1.5A Low Dropout Positive Voltage Regulator TO-220 TO-263 2 D PAK TO-252 (DPAK) SOT-223 Pin Definition: 1. Fixed / Adj 2. Output 3. Input Pin 2 connect to heat sink General Description The TS1086 Series are high performance positive voltage regulators are designed for use in applications requiring
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TS1086
O-220
O-263
O-252
OT-223
TS1086
marking A07
voltage regulator sot 223
18BSC
marking code cp
sot-223 code marking
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DIODE F10
Abstract: TSM4N60CZ TO-252 N-channel MOSFET
Text: TSM4N60 600V N-Channel Power MOSFET TO-220 ITO-220 TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 600 2.5 @ VGS =10V 2 General Description The TSM4N60 is produced using advanced planar stripe, DMOS technology. This latest technology has been
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TSM4N60
O-220
ITO-220
O-251
O-252
TSM4N60
DIODE F10
TSM4N60CZ
TO-252 N-channel MOSFET
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TO-252 N-channel MOSFET
Abstract: 600v 4A mosfet
Text: TSM4N60 600V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS V RDS(on)(Ω) ID (A) 600 2.5 @ VGS =10V 2 General Description TO-251 (IPAK) The TSM4N60 N-Channel Power MOSFET is TO-252 (DPAK) produced by new advance planar process. This
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TSM4N60
O-220
ITO-220
O-251
O-252
TSM4N60
TO-252 N-channel MOSFET
600v 4A mosfet
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TS1117 CW ADJ
Abstract: 27BSC TS1117 TS1117CW
Text: TS1117 1A Low Dropout Positive Voltage Regulator TO-220 TO-252 DPAK TO-223 Pin Definition: 1. Fixed / Adj 2. Output (Tab) 3. Input SOP-8 Pin Definition: 1. Fixed / Adj 2. Output 3. Output 4. Input 8. N/C 7. Output 6. Output 5. N/C General Description TS1117 are high performance positive voltage regulators are designed for use in applications requiring low
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TS1117
O-220
O-252
O-223
TS1117
TS1117 CW ADJ
27BSC
TS1117CW
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SK1045Y
Abstract: SK1040Y SKFM1045Y-D SKFM1045Y-D-TH SK1045
Text: SKFM1040Y-D FM120-M+ WILLAS THRU THRU 10.0A SCHOTTKY BARRIER RECTIFIERS - 40V- 100V SKFM10100Y-D FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER DPAK RECTIFIERS PACKAGE-20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers
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SKFM101
00Y-D
FM1200-M
PACKAGE-20V-
OD-123+
SKFM104
FM120-M
OD-123H
FM120-MH
FM130-MH
SK1045Y
SK1040Y
SKFM1045Y-D
SKFM1045Y-D-TH
SK1045
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0y marking
Abstract: 8.0A SCHOTTKY BARRIER RECTIFIERS
Text: SKFM840Y-D FM120-M+ WILLAS THRU THRU 8.0A SCHOTTKY BARRIER RECTIFIERS - 40V- 100V 1.0A SURFACE MOUNT SCHOTTKY BARRIER DPAK RECTIFIERS PACKAGE -20V- 200V SKFM8100Y-D FM1200-M+ Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers
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OD-123+
SKFM84
FM120-M
SKFM81
00Y-D
FM1200-M
OD-123H
FM150-MH
FM160-M
FM180-MH
0y marking
8.0A SCHOTTKY BARRIER RECTIFIERS
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ITO-220
Abstract: TSM4N60CH
Text: TSM4N60 600V N-Channel Power MOSFET TO-220 ITO-220 TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 600 2.5 @ VGS =10V 2 General Description The TSM4N60 is produced using advanced planar stripe, DMOS technology. This latest technology has been
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TSM4N60
O-220
ITO-220
O-251
O-252
TSM4N60
ITO-220
TSM4N60CH
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Untitled
Abstract: No abstract text available
Text: SKFM640C-D FM120-M+ WILLAS THRU THRU 6.0A SCHOTTKY BARRIER RECTIFIERS - 40V- 200V 1.0A SURFACE MOUNT SCHOTTKY BARRIER DPAK RECTIFIERS PACKAGE -20V- 200V SKFM6200C-D FM1200-M+ Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers
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OD-123+
SKFM64
FM120-M
SKFM62
00C-D
FM1200-M
OD-123H
FM120-MH
FM130-MH
FM140-MH
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marking b07
Abstract: LOW DROPOUT 1.5A 15V TS1086CM-xx
Text: TS1086 1.5A Low Dropout Positive Voltage Regulator TO-220 TO-263 2 D PAK TO-252 (DPAK) SOT-223 Pin Definition: 1. Fixed / Adj 2. Output 3. Input Pin 2 connect to heat sink General Description TS1086 are high performance positive voltage regulators are designed for use in applications requiring low dropout
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TS1086
O-220
O-263
O-252
OT-223
TS1086
marking b07
LOW DROPOUT 1.5A 15V
TS1086CM-xx
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TH 2190 mosfet
Abstract: ITO-220 TSM4N60CH 02402
Text: TSM4N60 600V N-Channel Power MOSFET TO-220 ITO-220 TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 600 2.5 @ VGS =10V 2 General Description The TSM4N60 is produced using advanced planar stripe, DMOS technology. This latest technology has been
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TSM4N60
O-220
ITO-220
O-251
O-252
TSM4N60
TH 2190 mosfet
ITO-220
TSM4N60CH
02402
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Untitled
Abstract: No abstract text available
Text: TSM4NB60 600V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 600 2.5 @ VGS =10V 2 General Description TO-251 (IPAK) The TSM4NB60 N-Channel Power MOSFET is TO-252 (DPAK) produced by new advance planar process. This
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TSM4NB60
O-220
ITO-220
O-251
O-252
TSM4NB60
TSM4NB60CH
TSM4NB60CP
TSM4NB60CZ
O-251
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Untitled
Abstract: No abstract text available
Text: TSM4NB60 600V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 600 2.5 @ VGS =10V 4 General Description TO-251 (IPAK) The TSM4NB60 N-Channel Power MOSFET is TO-252 (DPAK) produced by new advance planar process. This
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TSM4NB60
O-220
ITO-220
O-251
TSM4NB60
O-252
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mosfet "marking code 44"
Abstract: TSM2NB60CP
Text: TSM2NB60 600V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 600 4.4 @ VGS =10V 1 General Description TO-251 (IPAK) The TSM2NB60 N-Channel Power MOSFET is TO-252 (DPAK) produced by new advance planar process. This
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TSM2NB60
O-220
ITO-220
O-251
O-252
TSM2NB60
TSM2NB60CH
TSM2NB60CP
TSM2NB60CZ
O-251
mosfet "marking code 44"
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DIODE D12
Abstract: No abstract text available
Text: TSM4NB60 600V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 600 2.5 @ VGS =10V 2 General Description TO-251 (IPAK) The TSM4NB60 N-Channel Power MOSFET is TO-252 (DPAK) produced by new advance planar process. This
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TSM4NB60
O-220
ITO-220
O-251
O-252
TSM4NB60
TSM4NB60CH
TSM4NB60CP
TSM4NB60CZ
O-251
DIODE D12
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