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    2n511

    Abstract: 2N511A Texas Germanium 2N511B Germanium Transistor 2n511 transistor 9012 transistor power germanium transistor pnp Germanium power
    Text: TYPES 2N511, 2N511A, AND 2N511B P-N-P ALLOY-JUNCTION GERMANIUM HI6H-P0WER TRANSISTORS 40, 60 or 80 V01TS 10-A M P COLLECTOR CURRENT 150 -W ATT DISSIPATION lO W Ijo LOW VBE LOW THERMAL RESISTANCE for HIGH-POWER CONVERSION • HIGH-CURRENT SWITCHING AUDIO AMPLIFIER OUTPUT STAGES


    OCR Scan     		PDF 2N511, 2N511A, 2N511B V01TS 2N511A 2n511 Texas Germanium Germanium Transistor 2n511 transistor 9012 transistor power germanium transistor pnp Germanium power

    max672

    Abstract: No abstract text available
    Text: j v k æ x a j v k + 5 V, +10V Precision Voltage References General Description _ Features _ ♦ Pretrimmed to +5V, +10V +0.05% The MAX672 and MAX673 are precision voltages references that are pretrimmed to within ±.05% of 10V


    OCR Scan     		PDF MAX672 MAX673 MAX673 AX673ESA AX673M

    1N474BA

    Abstract: 1N474SA IN4742A 1N472BA AMERICAN POWER DEVICES 1N4734A 1N474B 1N47S9A in4756a 1N4730A 1N4731A
    Text: AMERICAN POWER DEVICES STE J> □ 73713S ÜQQÜGME IflS • AP» r-n-iS 1N4728A-1N4764A american S E M IC O N D U C T O R S Standard tolerances are 5% 10%, 2% & 1% are available power devices, inc. 1 W silicon zener diodes MECHANICAL CHARACTERISTICS FEATURES


    OCR Scan     		PDF 073713S 1N4728A-1N4764A 150-C 1N474BA 1N474SA IN4742A 1N472BA AMERICAN POWER DEVICES 1N4734A 1N474B 1N47S9A in4756a 1N4730A 1N4731A

    MRF580

    Abstract: MRFC581 ic tms 1000 MRF580A MRFC581A A581 2771 17t Motorola 581
    Text: 4bE D MOTOROLA SC C X ST R S /R F • MOTOROLA b 3 b ? 2 S 4 O G W Ô b S ■ flOTb ~P -3 V O S ■ SEMICONDUCTOR MRF580,A MRF581,A MRFC581,A TECHNICAL DATA The R F Line NPN SILICON HIGH FREQUENCY TRANSISTORS . . . designed for high current low power am plifiers up to 1.0 GHz.


    OCR Scan     		PDF MRF580 MRF581 MRFC581 MRF580A, MRF581A, MRFC581A ic tms 1000 MRF580A A581 2771 17t Motorola 581

    Untitled

    Abstract: No abstract text available
    Text: FEATURES • 20-300 MHz ■ 53 dB Linear Range ■ SMA Connectors & MODEL NO. 100C0912 PIN Diode Linear VCA ■ See DA0098 For DIP Version S cP J2 A Ò Ò Ò Ò -1SV +15V CONT GND .XX • .02 .XXX > .010 TYPICAL PERFORMANCE GUARANTEED PERFORMANCE ATTENUATION VS CONTROL VOLTAGE


    OCR Scan     		PDF DA0098 100C0912 V01TS

    944B

    Abstract: 1N941B IN946 IN944 RH944 1N941 1N941A 1N942 1N946B 943B
    Text: 1N941 thru Micro/semi Corp. 1N946B 1 The d ’Ode experts SANTA ANA, C'A SCOTTSDALE, A Z F or m ore in fo rm atio n call: 602 941-6300 FEATURES 11.7 VOLT TEM PERATURE CO M PEN SATED ZENER REFERENCE D IO D E S • ZENER VOLTAGE 11.7V ± 5 % • 1N941B, 943B, 944B. 945B HAVE JAN, JANTX, JANTXV, AND -1 QUALIFICATIONS


    OCR Scan     		PDF 1N941 1N946B 1N941B, MIL-S-19500/157 SIN944B 944B 1N941B IN946 IN944 RH944 1N941 1N941A 1N942 1N946B 943B

    P420L

    Abstract: P344L COP420L COP445L E3VU P345L P34XL Diode p420l
    Text: COP444L/COP445L/COP344L/COP345L National A M Sem iconducto r COP444L/COP445L/COP344L/COP345L Single-Chip N-Channei Microcontrollers General Description Features The CO P444L, CO P445L, CO P344L, and CO P345L SingleChip N-Channel Microcontrollers are members of the


    OCR Scan     		PDF COP444L/COP445L/COP344L/COP345L COP444L/COP445L/COP344L/COP345L P444L, P445L, P344L, P345L 444L-EVAL P420L P344L COP420L COP445L E3VU P34XL Diode p420l

    rca tube OC 3

    Abstract: GT40 GT-40 869B rca 30 tube
    Text: HALF-WAVE MERCURY-VAPOR RECTIFIER GENERAL DATA E lectr i c a l : Filam entary Cathode, Coated: 5± % Vol t a g e . C u r r e n t . 19 Minimum Heating Time at Rated Voltage Peak Tube Voltage Drop Approx.


    OCR Scan     		PDF 869-B GT-40 A3-20 92CM-7634 rca tube OC 3 GT40 GT-40 869B rca 30 tube

    UFN130

    Abstract: No abstract text available
    Text: UNITRODE CORP 9347963 TB U N I T R O D E CORP DE | T 3 4 7 cibB OOlObDt. 92D POWER MOSFET TRANSISTORS 100 Volt, 0.18 Ohm N-Channel 10606 D [M UFN132 UFN133 T ' - 3 ci' - i FEATURES • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown


    OCR Scan     		PDF UFN132 UFN133 UFN130 UFN131 UFN130

    G115

    Abstract: G115AP G115B G115BP
    Text: designed fo r . Gl 15 s M onolithic 6-Channel Enhancem ent-Type MOS FET Switch Siliconix BENEFITS R educes Extern al C om ponent Requirem ents • Sw itching A nalo g Signals In te rn a l Z e n e r D io d e P ro te cts th e Gate S ix S w itc h e s Per C hip


    OCR Scan     		PDF V01TS> G115 G115AP G115B G115BP

    4116 ram

    Abstract: RAM 4116 4116 4116 16k ram MK4116 4116-2 MK 4027 41163 4116 MEMORY i251
    Text: MOSTEX 16,384 X 1-BIT DYNAMIC RAM MK4116 J /N /E -2 /3 FEATURES □ Recognized industry standard 16-pin config­ uration fro m M O S T E K □ C om m on I/O capa b ility using "early w rite " operation □ 150ns access tim e , 3 2 0 n s c y c le (M K 4 1 1 6 -2 )


    OCR Scan     		PDF MK4116 16-pin 150ns 320nscycle 200ns 375ns 462mW 4116 ram RAM 4116 4116 4116 16k ram 4116-2 MK 4027 41163 4116 MEMORY i251

    Untitled

    Abstract: No abstract text available
    Text: T2 UNITRODE CORP 9347963 UNITRODE DE I ^ 3 4 7 ^ 3 □□10bû4 1 CORP 92D 10684 D f i- 3 J - / J POWER MOSFET TRANSISTORS 500 Volt, 0.85 Ohm N-Channel FEATURES • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Temperature Stability


    OCR Scan     		PDF UFN442 UFN443 swi61 UFN441 UFN440

    1SV50

    Abstract: 2N6151 2N67 2N6757 2N6758
    Text: 3875081 G E SOL ID STATE 01 î î f | 3a?SG fll 001ö3öfl b ¥_ 1 T-39-11 Standard Power MÔSFËTs 2N6757, 2N6758 F ile N u m b e r 1587 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N-CH A NN E L EN HA N C E M E N T MODE


    OCR Scan     		PDF T-39-11 2N6757, 2N6758 2N6757 2N6758 2N6751 50UACET0 T-39-11 1SV50 2N6151 2N67

    MCM6287

    Abstract: MCM6287P MCM6287P35 MCM6287-25
    Text: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA MCM6287 64K x 1 Bit Static Random A ccess Memory The MCM6287 is a 65,536 bit static random access memory organized as 65,536 words of 1 bit, fabricated using Motorola's second-generation high-performance silicon-gate


    OCR Scan     		PDF MCM6287 MCM6287 V01TSI Numbers-MCM6287P25 MCM6287J25 MCM6287P35 MCM6287J35 MCM6287P MCM6287-25

    19 khz fm stereo decoder circuit

    Abstract: FM Stereo Decoder Integrated Circuit FM Stereo Multiplex Decoder 3-8 decoder circuit diagram HA767 stereo multiplex decoder A767 fm stereo equivalent multiplex FM stereo MPX Decoder
    Text: HA767 x FM STEREO M ULTIPLEX DECODER FAIRCHILD LINEAR INTEGRATED C IR C U IT G E N E R A L D E S C R IP T IO N — T h e i x A l Q l is a m o n o lith ic F M S te re o M u ltip E e x D e c o d e r S y s te m c o n s tru c te d o n a sin gle s ilic o n c h ip u s in g th e F a ir c h ild P la n a r* e p ita x ia l process. T h is in te g ra te d


    OCR Scan     		PDF HA767 mA767 jA767 PA767 19 khz fm stereo decoder circuit FM Stereo Decoder Integrated Circuit FM Stereo Multiplex Decoder 3-8 decoder circuit diagram stereo multiplex decoder A767 fm stereo equivalent multiplex FM stereo MPX Decoder

    221A-04

    Abstract: D44E D45E
    Text: . MOTOROLA SC -CXSTRS/R F> [" 6 3 6 7 2 5 4 MOTOROLA SC Tb CXSTRS/R D E § h3 L >7 2 S4 96D 8088J?_— fi. F ODflOflflD T -33-33 _ NPN MOTOROLA D44E Series SEM IC O N D U C TO R PNP TECHNICAL DATA D45E Series C O M P L E M E N T A R Y S ILIC O N PO W ER


    OCR Scan     		PDF 3b72S4 8088JO U44E3 V01TS) 221A-04 D44E D45E

    Untitled

    Abstract: No abstract text available
    Text: 1N 4057 thru 1N 4085 A SANTA ANA, CA SCOTTSDALE. AZ Tor m ine ;niiirm.i!ii>n fall. (602 941-6300 FEATURES HIGH VOLTAGE TEMPERATURE COMPENSATED ZENER DIODES . ZENER VOLTAGE 12.4V to 200V * TEMPERATURE COEFFICIENT RANGE: 0.005% /°C to 0.002% /°C MAXIMUM RATINGS


    OCR Scan     		PDF 1N4057A N4058A 1N4057, V01TSI 1N4076A

    SKP33A

    Abstract: P8KE27A PSKE12A IN504 IN5646 P6KE0.1a P8KE P8KE24 F6KE39A IN5646A
    Text: discrete jGmitronicr hot line fO L L FREE NUMBER 800-777-3960 1500 Watts peak d e v ic e s Metal Case and Epoxy Molded. Silicon Voltage Transient Suppressor Diodes DO-13 METAL MOLDED CASE Reverse Stand Off Voltage Breakdown Voltage Maximum Maximum A*Available as bi­


    OCR Scan     		PDF DO-13 5SE10 5SE10A 5SE11 5SE12 5SE13 5SE13A 5SE16A 5SE18 5SE18A SKP33A P8KE27A PSKE12A IN504 IN5646 P6KE0.1a P8KE P8KE24 F6KE39A IN5646A

    Untitled

    Abstract: No abstract text available
    Text: • 3 H A R 0054130 R I lût ■ HAS I R S I R F F 1 1 F R F 1 1 / 1 1 1 / 1 1 1 R / 1 / 1 1 1 2 R 2 / 1 1 3 1 3 R / 1 N-Channel Power MOSFETs Avalanche Energy Rated* A u g u s t 19 91 Package Features T0 -20 5A F BOTTOM VIEW • 3.0A and 3.5A, 80V - 100V


    OCR Scan     		PDF IRFF110, IRFF111, IRFF112, IRFF113

    PC10PC9

    Abstract: CMOS F4S 426C COP224C COP225C COP226C COP244C COP245C COP400 OBD III
    Text: COP224C/COP225C/COP226C/COP244C/COP245C yn National ÉSASemiconductor COP224C/COP225C/COP226C/COP244C/COP245C Single-Chip 1k and 2k CMOS Microcontrollers General Description Features The COP224C, COP225C, COP226C, COP244C and COP245C fully static, Single-Chip CMOS Microcontrollers


    OCR Scan     		PDF COP224C/COP225C/COP226C/COP244C/COP245C COP224C, COP225C, COP226C, COP244C COP245C PC10PC9 CMOS F4S 426C COP224C COP225C COP226C COP400 OBD III

    MRF644

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA T h e R F L in e 25 W - 470 MHz C O N TRO LLED Q R F POWER TR A N S IS TO R NPN S ILIC O N R F POWER T R A N S IS TO R NPN SILIC O N . . designed for 12.5 V o lt U H F large-signal am plifier applications in industrial and commercial FM equipment operating to 512 MHz.


    OCR Scan     		PDF 16-Volt V01TS) MRF644 MRF644

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MOC5007 MOC5008 MOC5009 6-Pin DIP Optoisolators Logic Output . . . g a lliu m arsenide IRED o p tic a lly co up le d to a h ig h -sp ee d in te g ra te d d e te c to r w ith S c h m itt trig g e r o u tp u t. D esigned fo r a p p lic a tio n s re q u irin g e le ctrica l is o la tio n , fa s t


    OCR Scan     		PDF MQC5007 V01TS>

    diode sy 710

    Abstract: sy 710 diode FN121 ufn120 V01T
    Text: POWER MOSFET TRANSISTORS UFN120 100 Volt, 0.3 Ohm N-Channel 122 U F N 123 UFN FEATURES • Fast Switching • Low Drive Current • Ease of Paralleling • N o Second Breakdown • Excellent T em perature Stability D ESCRIPT IO N The Unitrode power M O S F E T design utilizes the m ost advanced technology available.


    OCR Scan     		PDF UFN120 UFN121 UFN122 UFN123 diode sy 710 sy 710 diode FN121 ufn120 V01T

    2N69S

    Abstract: To226AB 2N5989 diodA QE 2N5891 dioda OA 50
    Text: NPN MOTOROLA SEM ICO N D U CTO R 2N5989 2N5991 TECHNICAL DATA 12 AM PERE ^v^’^ ^ ^ H l G H POWER P LA STIC CO M PLEM EN TARY SILICON POWER TRAN SISTO RS ’ POWER TRAN SISTO RS CO M PLEM EN TARY SILICON V- • •. designed for use in general-purpose am plifier and switching


    OCR Scan     		PDF 2N5989 2N5991 2N5989 2NS991 V01TS> 2N69S To226AB diodA QE 2N5891 dioda OA 50