Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    VCE 24 ICM 1A Search Results

    VCE 24 ICM 1A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MARKING ZT SOT23 TRANSISTOR

    Abstract: PBSS4140T PBSS5140T free transistor and ic equivalent data PBSS4140
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PBSS4140T 40 V, 1A NPN low VCEsat BISS transistor Product specification Supersedes data of 2005 Feb 14 2005 Feb 24 Philips Semiconductors Product specification 40 V, 1A NPN low VCEsat (BISS) transistor PBSS4140T QUICK REFERENCE DATA


    Original     		PDF PBSS4140T SCA76 R75/05/pp9 MARKING ZT SOT23 TRANSISTOR PBSS4140T PBSS5140T free transistor and ic equivalent data PBSS4140

    MARKING ZT SOT23 TRANSISTOR

    Abstract: PBSS4140T PBSS5140T
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PBSS4140T 40 V, 1A NPN low VCEsat BISS transistor Product data sheet Supersedes data of 2005 Feb 14 2005 Feb 24 NXP Semiconductors Product data sheet 40 V, 1A NPN low VCEsat (BISS) transistor PBSS4140T FEATURES QUICK REFERENCE DATA


    Original     		PDF PBSS4140T R75/05/pp9 MARKING ZT SOT23 TRANSISTOR PBSS4140T PBSS5140T

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT PBSS4140T 40 V, 1A NPN low VCEsat BISS transistor Product data sheet Supersedes data of 2005 Feb 14 2005 Feb 24 NXP Semiconductors Product data sheet 40 V, 1A NPN low VCEsat (BISS) transistor PBSS4140T FEATURES QUICK REFERENCE DATA


    Original     		PDF PBSS4140T R75/05/pp9

    ZUMT720

    Abstract: ZUMT619 DSA003732
    Text: Super323  SOT323 NPN SILICON POWER SWITCHING TRANSISTOR ZUMT619 ISSUE 1 - SEPTEMBER 1998 FEATURES * 500mW POWER DISSIPATION * IC CONT 1A * 2A Peak Pulse Current * Excellent HFE Characteristics Up To 2A (pulsed) * Extremely Low Equivalent On Resistance; RCE(sat)


    Original     		PDF Super323TM OT323 ZUMT619 500mW ZUMT720 100ms ZUMT720 ZUMT619 DSA003732

    npn switching transistor Ic 100mA

    Abstract: ZUMT619 ZUMT720
    Text: Super323  SOT323 NPN SILICON POWER SWITCHING TRANSISTOR ZUMT619 ISSUE 2 - DECEMBER 2008 FEATURES * 500mW POWER DISSIPATION * IC CONT 1A * 2A Peak Pulse Current * Excellent HFE Characteristics Up To 2A (pulsed) * Extremely Low Equivalent On Resistance; RCE(sat)


    Original     		PDF Super323TM OT323 ZUMT619 500mW ZUMT720 100ms npn switching transistor Ic 100mA ZUMT619 ZUMT720

    mje13009 equivalent

    Abstract: mje13009L 2N2222 NPN Transistor features MJE13009 MJE13 MJE130 MJE13009L-T3P-T high frequency npn transistors collector to emitter voltage 400V 3A 1Mhz 2n2222 transistor pin b c e MJE13009-T3P-T
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13009 NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS „ DESCRIPTION The MJE13009 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are


    Original     		PDF MJE13009 MJE13009 MJE13009L QW-R203-024 mje13009 equivalent mje13009L 2N2222 NPN Transistor features MJE13 MJE130 MJE13009L-T3P-T high frequency npn transistors collector to emitter voltage 400V 3A 1Mhz 2n2222 transistor pin b c e MJE13009-T3P-T

    mje13009 equivalent

    Abstract: 2N2222 SOA mje13009l MJE13009L-T3P-T QW-R214-011 2n2222 transistor pin b c e 3V to 350V dc dc converter MJE13009-T3P-T 2N2222 transistor output curve free transistor and ic equivalent data
    Text: UNISONIC TECHNOLOGIES CO.,LTD. MJE13009 NPN EPITAXIAL SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS DESCRIPTION The MJE13009 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They


    Original     		PDF MJE13009 MJE13009 MJE13009L QW-R214-011 mje13009 equivalent 2N2222 SOA mje13009l MJE13009L-T3P-T 2n2222 transistor pin b c e 3V to 350V dc dc converter MJE13009-T3P-T 2N2222 transistor output curve free transistor and ic equivalent data

    mje13009 equivalent

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO.,LTD. MJE13009 NPN EPITAXIAL SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS DESCRIPTION The MJE13009 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They


    Original     		PDF MJE13009 MJE13009 O-220F QW-R219-007 mje13009 equivalent

    FZT957QTA

    Abstract: FZT957
    Text: A Product Line of Diodes Incorporated Green FZT957 300V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • • • • BVCEO > -300V IC = -1A high Continuous Collector Current ICM = -2A Peak Pulse Current


    Original     		PDF FZT957 OT223 -300V -240mV FZT857 AEC-Q101 OT223 J-STD-020 FZT957 DS33191 FZT957QTA

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated Green FZT957 300V PNP MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • BVCEO > -300V • • IC = -1A high Continuous Collector Current • • ICM = -2A Peak Pulse Current Case: SOT223 Case material: molded plastic. “Green” molding compound.


    Original     		PDF FZT957 OT223 -300V -240mV FZT857 J-STD-020 MIL-STD-202, DS33191

    mje13009l

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO.,LTD. MJE13009 NPN EPITAXIAL SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS DESCRIPTION The MJE13009 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They


    Original     		PDF MJE13009 MJE13009 QW-R214-011 mje13009l

    MJE13009L

    Abstract: mje13009 equivalent MJE13009-T3P-T 2n2905 time delay relay jc 5010 transistor 1N4933 MJE13009 MJE13009L-T3P-T MJE13009-TA3-T MJE13009-TF3-T
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13009 NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS 1 TO-3P DESCRIPTION The MJE13009 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are


    Original     		PDF MJE13009 MJE13009 O-220 O-220F QW-R203-024 MJE13009L mje13009 equivalent MJE13009-T3P-T 2n2905 time delay relay jc 5010 transistor 1N4933 MJE13009L-T3P-T MJE13009-TA3-T MJE13009-TF3-T

    Discrete IGBTS

    Abstract: SG12N06DT SG12N06T
    Text: SG12N06T, SG12N06DT Discrete IGBTs Dimensions TO-247AD E C G C TAB SG12N06T G=Gate, C=Collector, E=Emitter,TAB=Collector SG12N06DT Symbol Test Conditions o o Dim. Millimeter Min. Max. Inches Min. Max. A B 19.81 20.32 20.80 21.46 0.780 0.819 0.800 0.845 C


    Original     		PDF SG12N06T, SG12N06DT O-247AD SG12N06T 150oC; 300uH 00A/us 100oC Discrete IGBTS SG12N06DT SG12N06T

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated Green FZT857 300V NPN MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data •      BVCEO > 300V IC = 3.5A High Continuous Collector Current ICM = 5A Peak Pulse Current Very Low Saturation Voltage VCE sat < 155mV @ 1A


    Original     		PDF FZT857 OT223 155mV FZT957 AEC-Q101 DS33177

    300UH

    Abstract: Discrete IGBTS SG12N06DP SG12N06P
    Text: SG12N06P, SG12N06DP Discrete IGBTs Dimensions TO-220AB Dim. A B C D E F G H J K M N Q R E C G G=Gate, C=Collector, E=Emitter SG12N06P SG12N06DP Symbol Test Conditions o o Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125


    Original     		PDF SG12N06P, SG12N06DP O-220AB SG12N06P 150oC; 300uH 00A/us 100oC 300UH Discrete IGBTS SG12N06DP SG12N06P

    Discrete IGBTS

    Abstract: SG12N06DT SG12N06T 250NS120
    Text: SG12N06T, SG12N06DT Discrete IGBTs Dimensions TO-247AD E C G C TAB SG12N06T G=Gate, C=Collector, E=Emitter,TAB=Collector SG12N06DT Symbol Test Conditions o o Dim. Millimeter Min. Max. Inches Min. Max. A B 19.81 20.32 20.80 21.46 0.780 0.819 0.800 0.845 C


    Original     		PDF SG12N06T, SG12N06DT O-247AD SG12N06T 150oC; 300uH 00A/us 100oC Discrete IGBTS SG12N06DT SG12N06T 250NS120

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information PolarHVTM IGBT IXGH28N60B3D1 VCES = 600V IC110 = 28A VCE sat ≤ 1.8V TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ± 20 V VGEM


    Original     		PDF IXGH28N60B3D1 IC110 O-247 338B2

    transistor mje13007 equivalent

    Abstract: mtp8p mje13007 equivalent
    Text: UTC MJE13007 NPN EPITAXIAL SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS DESCRIPTION The UTC MJE13007 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V


    Original     		PDF MJE13007 MJE13007 O-220 QW-R203-019 transistor mje13007 equivalent mtp8p mje13007 equivalent

    IXGH28N60B3D1

    Abstract: IXGH28N60B3 IF110 p3nc
    Text: Advance Technical Information IXGH28N60B3D1 PolarHVTM IGBT VCES = 600V = 28A IC110 VCE sat ≤ 1.8V TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ± 20 V VGEM


    Original     		PDF IXGH28N60B3D1 IC110 O-247 338B2 IXGH28N60B3D1 IXGH28N60B3 IF110 p3nc

    BC84S

    Abstract: No abstract text available
    Text: IL BC846 BC847 BC848 SILICON PLANAR EPITAXIAL TRANSISTORS General purpose N-P-N transistors Marking BC846 = ID BC846A = 1A BC846B = IB BC847 = 1H BC847A = IE BC847B = IF BC847C = 1G BC848 = 1M BC848A = 1] BC848B = IK BC848C = 1L PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm


    OCR Scan     		PDF BC846 BC847 BC848 BC846 BC846A BC846B BC847 BC847A BC847B BC847C BC84S

    bcb47

    Abstract: BC846-BC848 BC847C 125 BC848C 33T4 BC846 BC846A BC846B BC847 BC847A
    Text: 23Ô33T4 000073b 7äT • BC846 BC847 BC848 SILICON PLANAR EPITAXIAL TRANSISTORS General purpose N -P -N transistors Marking BC846 = ID BC846A = 1A BC846B = IB B C 847= 1H BC847A = IE BC847B = IF BC847C = 1G BC848 = 1M BC848A = 1J BC848B = IK BC848C = 1L PACKAGE OUTLINE DETAILS


    OCR Scan     		PDF 000073b BC846 BC847 BC848 BC846 BC846A BC846B BC847= BC847A BC847B bcb47 BC846-BC848 BC847C 125 BC848C 33T4 BC846A BC846B BC847 BC847A

    Untitled

    Abstract: No abstract text available
    Text: 23Ô33T4 00DG73b 7flT • BC846 BC847 BC848 SILICON PLANAR EPITAXIAL TRANSISTORS General purpose N-P-N transistors Marking BC846 = ID BC846A = 1A BC846B = IB BC847 = 1H BC847A = IE BC847B = IF BC847C = 1G BC848 = 1M BC848A = 1J BC848B = IK BC848C = 1L PACKAGE OUTLINE DETAILS


    OCR Scan     		PDF 00DG73b BC846 BC847 BC848 BC846 BC846A BC846B BC847A BC847B

    Untitled

    Abstract: No abstract text available
    Text: Super323 SOT323 NPN SILICON POWER SWITCHING TRANSISTOR ZUMT619 IS S U E 1 - S E P T E M B E R FEATU RES 500mW POWER DISSIPATION * * * * lc CO N T 1A 2 A Peak P u lse C u rren t E x c e lle n t H FE C h a ra c te ristic s U p T o 2 A (p u lsed )


    OCR Scan     		PDF Super323TM OT323 ZUMT619 500mW 160mQ 100MHz

    1M BC848

    Abstract: BC848C BC846 BC846A BC846B BC847 BC847A BC847B BC847C BC848
    Text: BC846 BC847 BC848 SILICON PLANAR EPITAXIAL TRANSISTORS General purpose N -P -N transistors Marking BC846 = ID BC846A = 1A BC846B = IB BC847 = 1H BC847A = IE BC847B = IF BC847C = 1G BC848 = 1M BC848A = 1J BC848B = IK BC848C = 1L PA C K A G E O U TLIN E DETA ILS


    OCR Scan     		PDF BC846 BC847 BC848 BC846 BC846A BC846B BC847A BC847B BC847C 1M BC848 BC848C BC846A BC846B BC847 BC847A BC847B BC847C BC848