dual mosfet so8 ic
Abstract: No abstract text available
Text: GF4936 Dual N-Channel Enhancement-Mode MOSFET i Vds30V R d S ON 37mQ Id 5 .8 A # D1 D1 D2 D2 Mechanical Data_ Features_ Case: SO-8 molded plastic body •Advanced Trench Process Technology Terminals: Leads solderable per MIL-STD-750,
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GF4936
Vds30V
MIL-STD-750,
25CTC/10
dual mosfet so8 ic
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RCS035L03
Abstract: rcs035 TSQ0308G-RCS035L03 TSQ03080-RCS035L03 TSZ22111-03 TSZ2211104
Text: PRODUCTS S0P8 TYPE PAGE RCS035L03 1.TYPE RCS035L03 2.STRUCTURE SILICON N-CHANNEL MOS FET 3.APPLICATIONS SWITCHING 1/3 4.ABSOLUTE MAXIMUM RATINGS [Ta=25lC] « IT IS THE SAME RATINGS FOR THE Tri AND Tr2. } DRAIN-SOURCE VOLTAGE VDSS 30V GATE-SOURCE VOLTAGE V GSS
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RCS035L03
25/JUL/2002
TSQ03080-RCS035L03
TSZ2211104
RCS035LÃ
TSZ2211Ã
RCS035L03
rcs035
TSQ0308G-RCS035L03
TSQ03080-RCS035L03
TSZ22111-03
TSZ2211104
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Untitled
Abstract: No abstract text available
Text: TOSHIBA FIELD EFFECT TRANSISTOR 2SK1530 SILICON N CHANNEL MOS TYPE HIGH POWER AM PL IF IE R AP PL IC AT IO N Unit in mm . High Breakdown Voltage 20.5MAX : Vd ss *200V MIN. ff 3.3 ±0.2 . High Forward Transfer Admittance : |Yfs | *5.0S(TYP.) . Complementary to 2SJ201
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2SK1530
2SJ201
Tc-25
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c 111 transistor
Abstract: No abstract text available
Text: TOSHIBA FIELD EFFECT TRANSISTOR 2SK1529 SILICON N CHANNEL MOS TYPE HIGH POWER AMPLIFIER APPLICATION Unit in mm 15.9MAX . High Breakdown Voltage 03.2±O.2 : Vj ss“180V MIN.) 7 . High Forward Transfer Admittance : | Yfs | “4.OS (TYP.) . Complementary to 2SJ200
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2SK1529
2SJ200
Ta-25
Tcm25
SC-65
2-16C1B
c 111 transistor
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