VDS30V Search Results

dual mosfet so8 ic

Contextual Info: GF4936 Dual N-Channel Enhancement-Mode MOSFET i Vds30V R d S ON 37mQ Id 5 .8 A # D1 D1 D2 D2 Mechanical Data_ Features_ Case: SO-8 molded plastic body •Advanced Trench Process Technology Terminals: Leads solderable per MIL-STD-750,

RCS035L03

Abstract: rcs035 TSQ0308G-RCS035L03 TSQ03080-RCS035L03 TSZ22111-03 TSZ2211104
Contextual Info: PRODUCTS S0P8 TYPE PAGE RCS035L03 1.TYPE RCS035L03 2.STRUCTURE SILICON N-CHANNEL MOS FET 3.APPLICATIONS SWITCHING 1/3 4.ABSOLUTE MAXIMUM RATINGS [Ta=25lC] « IT IS THE SAME RATINGS FOR THE Tri AND Tr2. } DRAIN-SOURCE VOLTAGE VDSS 30V GATE-SOURCE VOLTAGE V GSS

Contextual Info: TOSHIBA FIELD EFFECT TRANSISTOR 2SK1530 SILICON N CHANNEL MOS TYPE HIGH POWER AM PL IF IE R AP PL IC AT IO N Unit in mm . High Breakdown Voltage 20.5MAX : Vd ss *200V MIN. ff 3.3 ±0.2 . High Forward Transfer Admittance : |Yfs | *5.0S(TYP.) . Complementary to 2SJ201

c 111 transistor

Contextual Info: TOSHIBA FIELD EFFECT TRANSISTOR 2SK1529 SILICON N CHANNEL MOS TYPE HIGH POWER AMPLIFIER APPLICATION Unit in mm 15.9MAX . High Breakdown Voltage 03.2±O.2 : Vj ss“180V MIN.) 7 . High Forward Transfer Admittance : | Yfs | “4.OS (TYP.) . Complementary to 2SJ200