thread communication
Abstract: multi user communication
Text: Going Multi on Itanium Tools for Multithreading and Multiprocessing Bob Kuhn, bob.kuhn@intel.com Kuck & Associates, an Intel company http://www.kai.com 217-356-2288 Kuck & Associates, an Intel company Context - SMP Drafts* Serial Itanium Launch * “Draft” is American slang for “follow closely behind”
|
Original
|
SC2000,
thread communication
multi user communication
|
PDF
|
CY7C1021V30
Abstract: CY7C1021V30-15BAI
Text: CY7C1021V30 64K x 16 Static RAM Features W riting to the device is a cco m plished by takin g C hip Enable CE and W rite Enable (W E) inputs LOW. If Byte Low Enable (BLE) is LOW, then da ta from I/O pins (l/O-i throu gh l/Og), is w ritten into the location specified on th e address pins (A0
|
OCR Scan
|
CY7C1021V30
48-ball
CY7C1021V30
CY7C1021V30-15BAI
|
PDF
|
ABE 950
Abstract: No abstract text available
Text: fax id: 5222 7 ^ CYPRESS CY7C007 CY7C017 PRELIMINARY 3 2 K x 8/9 Dual-Port Static RAM Fully a s y n c h ro n o u s o p eratio n Features A u to m atic p ow er-dow n • True D u al-P o rted m e m o ry cells w h ich allo w s im u lta neo us ac c e s s o f th e sa m e m e m o ry location
|
OCR Scan
|
CY7C007
CY7C017
ABE 950
|
PDF
|
Untitled
Abstract: No abstract text available
Text: EDI8LM32513V-RP 512Kx32 SRAM Ruggedized Plastic 512Kx32 CMOS High Speed Static RAM Features 512Kx32 CMOS Static RAM The EDI8LM32513V is a high-speed 16-Megabit static • Fast Access Times: 1 2 ,1 5 and 20ns • Individual Byte Enables Commercial, Industrial and Military temperature range.
|
OCR Scan
|
EDI8LM32513V-RP
512Kx32
M0-47AE
MO-47AE
EDI8LM32513V-RP
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SEP x 7 993 PDM41097S PDM41097L PARADIGM' 4 Megabit Static RAM 4 Meg x 1-Bit Features speed parts. Writing is accomplished when the write enable (WE and the chip enable (CE) inputs are both LOW. Reading is accomplished when WE remains HIGH and CE and OE are both LOW.
|
OCR Scan
|
PDM41097S
PDM41097L
MIL-STD-883
PDM41097
PPM41097S,
|
PDF
|
HYUNDAI i10
Abstract: QAA100 CY62256V25-70SNC CY62256V25-70ZC CY62256V25L-70SNC CY62256V25L-70ZC CY62256V25LL-70SNC " i10" hyundai
Text: • rn n rn n *= # r C i l h h o o CY62256V25 PRBUMINIÀRY 32K x 8 2.5V Static RAM Features active LO W ou tput enable OE and three -state drivers. The device has an au tom atic pow e r-d ow n feature, reducing the po w e r con sum p tion by m ore tha n 98% w hen deselected.
|
OCR Scan
|
CY62256V25
CY62256V25
HYUNDAI i10
QAA100
CY62256V25-70SNC
CY62256V25-70ZC
CY62256V25L-70SNC
CY62256V25L-70ZC
CY62256V25LL-70SNC
" i10" hyundai
|
PDF
|
vizo
Abstract: No abstract text available
Text: CY7B185 CY7B186 CYPRESS SEMICONDUCTOR 8,192 x 8 Static RAM Features Functional Description • BiCMOS for optimum speed/power T h e C Y 7 B 1 8 5 a n d C Y 7 B 1 8 6 a re h ig h -p e r fo rm a n c e B iC M O S s ta tic R A M s o rg a n iz ed as 8,192 w o rd s b y 8 bits. T h e s e
|
OCR Scan
|
CY7B185
CY7B186
185-12P
185-15L
-00016-B
vizo
|
PDF
|
CY62127V
Abstract: No abstract text available
Text: fax id: 1100 CY62126V PRELIMINARY 64K x 16 Static RAM Features BLE is LOW, then data from I/O pins (l/0-| through l/Og), is written into the location specified on the address pins (A0 through A 15). If byte high enable (BHE) is LOW, then data from I/O pins (l/Og through l/0 -|g) is written into the location speci
|
OCR Scan
|
CY62126V
44-pin
CY62126V
CY62127V
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ^ E D I E D I 8 F 2 4 1 2 9 C Electronic Designs Inc. High Speed Three Megabit SRAM Module 128KX24 Static RAM CMOS, High Speed Module D P ÎF Û Ü M T D O M Features The EDI8F24129C is a high speed 3 megabit Static RAM module organized as 128K words by 24 bits. This
|
OCR Scan
|
EDI8F24129C
128KX24
EDI8F24129C
128Kx8
0001b
|
PDF
|
256kx32
Abstract: ADSP-21062L EDI8L32128V EDI8L32512V MO-47AE TMS320LC31 Theta-J
Text: ^EDI EDI8L32256V 256Kx32 SRAM ELECTRONIC DESIGNS. INC 256Kx32,3.3V, Static RAM Features The EDI8L32256V is a high speed, 3.3 volt, 8 megabit 256Kx32 bit CMOS Static S RAM. The device is available with access times of 12,15, DSP Memory Solution 17 and 20ns, allowing the creation of a no w ait state DSP
|
OCR Scan
|
EDI8L32256V
256Kx32
21060L
ADSP-21062L
TMS320LC31
MO-47AE
EDI8L32256V
avai8L32256V15AC
ADSP-21062L
EDI8L32128V
EDI8L32512V
MO-47AE
Theta-J
|
PDF
|
DSP5630x
Abstract: EDI8L24129V
Text: ^EDI ED I8L24129V 128KX24 SRAM 3.3 Volt ELECTRONIC DESIGNS INC Asynchronous, 3.3V, 128Kx24 SRAM Features 128Kx24 bit CMOS Static Random Access Memory Array • Fast Access Times: 10,12, and 15ns • Master Output Enable and Write Control • TTL Compatible Inputs and Outputs
|
OCR Scan
|
EDI8L24129V
128KX24
MO-163)
DSP5630xâ
EDI8L24129VxxBC
128Kx8
EDI8L24129V10BC
EDI8L24128V12BC
DSP5630x
EDI8L24129V
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ¿S* r s z g g g fp r rP ìF p L > I 1 n C Y 7 C 1 3 9 9 V n i l ì L O O 32K x 8 3.0V Static RAM Features • Single 3.0V power supply • Ideal for low-voltage cache mem ory applications • High speed — 12/15 ns • Low active power — 198 mW max.)
|
OCR Scan
|
|
PDF
|
CY62256-55SNC
Abstract: CY62256-70SNC CY62256 CY62256-55 CY62256-70 CY62256L-55SNC CY62256LL-55SNC sc007
Text: fax id: 1068 CY62256 32Kx8 Static RAM Features o u tput enable OE and three -state drivers. T his device has an a u to m a tic pow er-dow n feature, reducing th e po w e r co n su m p tion by 99 .9% w hen deselected. The C Y 6 22 56 is in the sta n
|
OCR Scan
|
CY62256
32Kx8
CY62256
CY62256-55SNC
CY62256-70SNC
CY62256-55
CY62256-70
CY62256L-55SNC
CY62256LL-55SNC
sc007
|
PDF
|
A13L
Abstract: CY7C1021V
Text: CY7C1021V V CYPRESS 64K x 16 Static RAM Features W riting to th e device is a c c o m plished by takin g chip ena b le CE and w rite enable (W E) inputs LOW. If byte low enable (BLE) is LOW, then data from I/O pins (l/O-i throu gh l/O g ), is w ritten into the location sp e cified on the address pins (A0
|
OCR Scan
|
CY7C1021V
44-pin
400-mil
48-Ball
CY7C1021V
A13L
|
PDF
|
|
|
256KX32
Abstract: No abstract text available
Text: EDI8LM32257V-RP ^EDI 256Kx32 SRAM Ruggedized Plastic ELECTRONIC DESIGNS. INC ADVANCED 256Kx32 CMOS High Speed Static RAM Features 256Kx32 bit CMOS Static Random Access Memory Array • Fast Access Times: 12,15 and 20ns • Individual Byte Enables • User Configurable Organization
|
OCR Scan
|
EDI8LM32257V-RP
256Kx32
EDI8LM32257V15AM
EDI8LM32257V20AM
MO-47AE
40C/W
01581USA
EDI8LM32257V-RPRev.
12/97ECOM802
|
PDF
|
CY7B134
Abstract: CY7B135 7B135-35 f21l 48-pin TSOP I
Text: CY7B134 CY7B135 CY7B1342 ¥ CYPRESS 4K x 8 Dual-Port Static RAMs and 4K x 8 Dual-Port Static RAM with Semaphores Features Functional Description • 0.8-micron BiCMOS for high performance The CY7B134, CY7B135, and CY7B1342 are high-speed BiCMOS 4K x 8 dual-port
|
OCR Scan
|
CY7B134
CY7B135
CY7B1342
7B1342
7B134
48-pin
7B135/7B1342
52-pin
CY7B134,
CY7B135,
7B135-35
f21l
48-pin TSOP I
|
PDF
|
Untitled
Abstract: No abstract text available
Text: CY7B193 AD VAN CED INFORM ATION CYPRESS SEMICONDUCTOR 262,144 x 1 Static R/W RAM Features Functional Description • High speed T h e C Y 7D 193 is a h ig h -p e rfo rm a n c e B iC M O S static R A M o rg a n iz e d as 262,144 w ords by 1 bit. E a sy m e m o ry e x p a n sio n is
|
OCR Scan
|
CY7B193
|
PDF
|
004495
Abstract: A12C A15C CY62126V
Text: fax id: W OYPHESS 1100 CY62126V PRELIMINARY 64K x 16 Static RAM Features BLE is LOW, then data from I/O pins (l/O-i through l/Og), is written into the location specified on the address pins (A 0 through A 15). If byte high enable (BHE) is LOW, then data from
|
OCR Scan
|
44-pin
CY62126V
CY62erein
004495
A12C
A15C
|
PDF
|
Untitled
Abstract: No abstract text available
Text: fax id: 5221 CY7C027/028 CY7C037/038 PRELIMINARY •= CYPRESS 32K/64Kx 16/18 Dual-Port Static RAM Features Fully a s yn ch ro n o u s o peratio n A u to m atic p ow er-dow n True D u al-P o rted m e m o ry cells w h ich allo w s im u lta neo us ac c e s s o f th e s a m e m e m o ry location
|
OCR Scan
|
CY7C027/028
CY7C037/038
32K/64Kx
|
PDF
|
Untitled
Abstract: No abstract text available
Text: EDI8LM32513C-RP ^ E D I 512Kx32 SRAM Ruggedized Plastic ELECTRONIC DESIGNS, INC 512Kx32 CMOS High Speed Static RAM Features 512Kx32 CMOS Static RAM Fast Access Times: 12,15 and 20ns TTL Compatible Inputs and Outputs Fully Static, No Clocks Surface Mount Package
|
OCR Scan
|
EDI8LM32513C-RP
512Kx32
M0-47AE
A0-A18
DQ0-DQ31
EDI8LM32513C
16-Megabit
EDI8LM32513C15AM
|
PDF
|
EDI8F82048C70BSC
Abstract: EDI8F82048C OMA210
Text: MSX EDI8F82048C 2 MegxS SRAM Module ELECTRONIC DESIGNS. M C 2Megabitsx8 Static RAM CMOS, Module Features The EDI8F82048C is a 16 megabit CMOS Static RAM based on sixteen 128Kx8 Static RAMs mounted on a multi-layered 2 Meg x 8 bit CMOS Static epoxy laminate FR4 substrate.
|
OCR Scan
|
EDI8F82048C
100ns
EDI8F82048LP)
EDI8F82048C
128Kx8
EDI8F82048C70BSC
EDI8F82048C70BSI.
MA01581
OMA210
|
PDF
|
C62256-4
Abstract: CY62256 CY62256-55 CY62256-55SNC CY62256-55ZRC CY62256-70 CY62256L-55SNC CY62256L-55ZRC CY62256LL-55SNC ZR28
Text: fax id: 1068 CY62256 32Kx8 Static RAM Features ou tput enable OE and three -state drivers. T his device has an au to m a tic pow er-dow n feature, reducing th e po w e r co n su m p tion by 99 .9% w hen deselected. The C Y 6 22 56 is in the sta n dard 4 5 0 -m il-w id e (300-m il body w idth) SO IC, TSOP, and
|
OCR Scan
|
CY62256
32Kx8
C62256-4
CY62256-55
CY62256-55SNC
CY62256-55ZRC
CY62256-70
CY62256L-55SNC
CY62256L-55ZRC
CY62256LL-55SNC
ZR28
|
PDF
|
266-3S
Abstract: No abstract text available
Text: _ C Y 7C 266 SEMICONDUCTOR 8192 x 8 P R O M Power Switched and Reprogram m able Features • T T L -c o m p a tib le I/O • CM O S for optim um speed/power • D ir e c t r e p la c e m e n t fo r E P R O M s • Windowed for reprogram m ability
|
OCR Scan
|
|
PDF
|