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    VOLTAGE SENSITIVE RESISTOR SIEMENS Search Results

    VOLTAGE SENSITIVE RESISTOR SIEMENS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B6M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B5PCT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B7PCT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation

    VOLTAGE SENSITIVE RESISTOR SIEMENS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BFP420 application notes 900MHz

    Abstract: SCT598-Package BFP420 application notes BFP420 BGC420 Q62702-G0092 500R 134fF IC LP7 3770E-01
    Text: BGC420 Self-Biased BFP420 l l l l l SIEGET25- Technology Small SCT598-Package Control Pin For Switching The Device Off Current Easy Adjustable By An External Resistor Voltage Independent Current 2V – 4.5V 8 7 6 5 2 1 3 4 VPW05982 ESD: Electrostatic discharge sensitive device, observe


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    PDF BGC420 BFP420 SCT598-Package VPW05982 Q62702-G0092 SCT598 BGC420 BFP420 application notes 900MHz SCT598-Package BFP420 application notes BFP420 Q62702-G0092 500R 134fF IC LP7 3770E-01

    2Q394

    Abstract: rx 3152 BGC405 A12 marking ikr 251 50W rf power transistor 100MHz 500R BFP405 Q62702-G0091 TL18
    Text: BGC405 Self-Biased BFP405 l l l l l SIEGET25- Technology Small SCT598-Package Control Pin For Switching The Device Off Current Easy Adjustable By An External Resistor Voltage Independent Current 2V – 4.5V 8 7 6 5 2 1 3 4 VPW05982 ESD: Electrostatic discharge sensitive device, observe


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    PDF BGC405 BFP405 SCT598-Package VPW05982 Q62702-G0091 SCT598 BGC405 2Q394 rx 3152 A12 marking ikr 251 50W rf power transistor 100MHz 500R BFP405 Q62702-G0091 TL18

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS 2.1 Magneto Resistors Fundamentals Magneto resistors are magnetically influenced resistors of InSb/NiSb material which work according to the Gauss effect. The charge carriers which flow through the semiconductor material experience a sideways action in a traverse magnetic field by


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    Untitled

    Abstract: No abstract text available
    Text: SIEMENS IRM3000/3003/3015/3100 3 V Infrared Data Transceiver Preliminary Dimensions in inches mm APPLICATIONS • Wireless Computer and Peripheral Communications • Wireless Computer and Telephone Communications > Interactive TV and Remote Control IROataCOM


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    PDF IRM3000/3003/3015/3100 IRM3015 IRM3000/3Q03/3015/3100 18-pln fl535t

    THX 230

    Abstract: No abstract text available
    Text: SIEMENS IRM6000/6002 Infrared Data Transceiver Prelim inary Dimensions in inches mm HttMOOO .360 <9.141 .059 (1.’50) (3.81) _ L Ö .101 i T 112(2.84) (4.09) .008 (0 .20) FEA TU RES • Sm all PackageSize: 4.3 m m x 4.1 m m x 9.4 m m • Com patible w M i IrD A Specifications


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    PDF IRM6000/6002 IRM600Q/8002 THX 230

    ir led

    Abstract: No abstract text available
    Text: SIEMENS IRM6000/6002 INFRARED DATA TRANSCEIVER Preliminary A current limiting resistor should be used between the LED anode and M x See Table 1 for recom mended values. For operation at 2.7 V, the LED anode should be tied directly to Vc c Table 1. Operating Voltage VCq


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    PDF IRM6000/6002 IRM6000/6002 fl23b32b ir led

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS IRM6000/6002 Infrared Data Transceiver P re lim in a ry Dimensions In inches mm FEATURES • Small Package Size: 4.3 mm x 4.1 m m x 9.4 m m • Compatible w ith IrDA Specifications • IrDA Data Rates up to 115.2 Kb/s • Wide Dynamic Range • Slim Package for Telephonic Applications


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    PDF IRM6000/6002 18-pln fl535t

    IRF 1450

    Abstract: km 1667 km 1667 datasheet mmic marking code j
    Text: SIEMENS CMY 91 GaAs MMIC Datasheet * GaAs mixer with integrated IF-amplifier for mobile communication * Frequency range 0.8 GHz to 2.5 GHz * Very low power consumption 1 mA typ. * Single positive supply voltage * Operating voltage range: 2.7 to 6 V * Miniature package MW6 based on SOT23


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    PDF Q62702-M9 01-coil; B82412-A3221-M 900MHz 1450MHz 1900MHz IRF 1450 km 1667 km 1667 datasheet mmic marking code j

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS CGY 31 GaAs MMIC Two-stage monolithic microwave IC MMIC amplifier All-gold metallization Chip fully passivated Operating voltage range: 3 to 6 V 50 Q input/output; R L in f t L o u t > 10 dB Gain: 18 dB at 1.6 GHz Low noise figure: 4 dB at 1.6 GHz


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    PDF Q68000-A6887 EHT08101

    PMB2307

    Abstract: No abstract text available
    Text: SIEMENS PMB 2307R PLL-Frequency Synthesizer Preliminary Data CMOS 1C Features • • • • Low operating current consumption typically 3.5 mA High input sensitivity, high input frequencies (220 MHz) Extremely fast phase detector without dead zone Linearization of the phase detector output by current


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    PDF 2307R 65-MHz PMB2307

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS CMY 91 GaAs MMIC • • • • • • GaAs mixer with integrated IF-amplifier for mobile communication Frequency range 0.8 GHz to 2.5 GHz Very low power consumption 1 mA typ. Single positive supply voltage Operating voltage range: 2.7 to 6 V Miniature package MW6 based on SOT23


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    PDF Q62702-M9 S35b05 012241H 1900MHz D15E4E1

    LH1525

    Abstract: No abstract text available
    Text: LH1525 LH1Ç26 SIEMENS 1 Form A, Duali Foirn A High-Voltage Solid State Relays FEATURES d e s c r ip t io n Load Voltage Load Current ac/dc dc Typical Rqn Typical Operating Current ton/tof (max Cufrent Limit: ac/dc The LH1525 and LH1526 relays as SPST normaily.open switches


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    PDF LH1525 TH1S26 LH1526 LH1525AT/AAB, LH1526AB/AAC 6G-72

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS PMB 2307R Table of Contents Page 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 O verview .2 Features. 2


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    PDF 2307R

    "if amplifier" siemens

    Abstract: M2 MARKING SOT23 SSFF V1F p B82412-A3221-K B82412-A3471-K Q62702-M9 B82412-A3270-M IRF 1450
    Text: • û 2 3 5 b ü S □ □ cî ü7DD u aA s M M iu SIEMENS T23 ■ CMY 91 D a t a s h e e t * GaAs mixer with integrated IF-amplifier for mobile communication * Frequency range 0.8 GHz to 2.5 GHz * Very low power consumption 1 mA typ. * Single positive supply voltage


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    PDF S235bà Q62702-M9 900MHz 1450MHz a235b05 1900MHz fi235b05 "if amplifier" siemens M2 MARKING SOT23 SSFF V1F p B82412-A3221-K B82412-A3471-K B82412-A3270-M IRF 1450

    PMB2307R

    Abstract: PMB2307 SIEMENS 2306 DECT siemens dect pmb 30MHZ "Mobile Communication ICs" PMB2307 equivalent
    Text: SIEMENS PMB 2307R PLL-Frequency Synthesizer Preliminary Data CMOS 1C Features • • • • Low operating current consumption typically 3.5 mA High input sensitivity, high input frequencies (220 MHz) Extremely fast phase detector without dead zone Linearization of the phase detector output by current


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    PDF 2307R 65-MHz detector70 PMB2307R PMB2307 SIEMENS 2306 DECT siemens dect pmb 30MHZ "Mobile Communication ICs" PMB2307 equivalent

    PSB4400P

    Abstract: PSB4400-P power supply luna siemens power supply luna 2 siemens Q67000-A6074 pj 75 sx 34 ITP0449J ITP04706 P-DIP-18 P-DSO-20
    Text: bSE D • ÖSBSbüS Ü Ü S n 2 7 S3S « S I E G SIEMENS SIEMENS AKTIENGESELLSCHAF Standard Speech Circuit SSC PSB 4400-P;-T Prelim inary Data Bipolar 1C Features • • • • • • • • • • • • Operation down to a DC line voltage of 1.6 V


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    PDF GSn27 4400-P PSB4400P PSB4400-P power supply luna siemens power supply luna 2 siemens Q67000-A6074 pj 75 sx 34 ITP0449J ITP04706 P-DIP-18 P-DSO-20

    of mosfet BUZ 384

    Abstract: simple SL 100 NPN Transistor leistungstransistoren ANALOG DEVICES bar code on the lable test transistors Siemens Dioden fgs npn
    Text: SIEMENS Technische Angaben Technical Information 1 Übersicht 1 Overview 1.1 SIPMOS-Leistungstransistoren 1.1 SIPMOS Power Transistors Leistungstransistoren im Bereich 5 0 V . 1000 V und 10 m fi . 8 Q Power transistors in the 50 V to 1000 V and 10 mQ to 8 Q range


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    PDF SIL00001 SIL00002 MILSTD-883, of mosfet BUZ 384 simple SL 100 NPN Transistor leistungstransistoren ANALOG DEVICES bar code on the lable test transistors Siemens Dioden fgs npn

    GMA marking

    Abstract: No abstract text available
    Text: SIEMENS BFG 135A NPN Silicon RF Transistor • For low-distortion broadband output amplifier stages in antenna and telecommunications systems up to 2 G H z at collector currents from 70mA to 130mA • Power amplifiers for D ECT and PCN systems • Integrated emitter ballast resistor


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    PDF 130mA BFG135A Q62702-F1322 OT-223 900MHz IS211 GMA marking

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BXY 44P HiRel Silicon PIN Diode Features • HiRel Discrete and Microwave Semiconductor • Current controlled RF resistor for RF attenuators and switches • High reverse voltage • Matched diode - pair • Hermetically sealed microwave package @sa qualified


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    PDF 44P-FP de/semiconductor/products/35/35 de/semiconductor/products/35/353

    marking code AC sot 23-5

    Abstract: marking BFG
    Text: SIEMENS BFG 235 NPN Silicon RF Transistor • For low-distortion broadband output amplifier stages in antenna and telecommunications systems up to 2 GHz at collector currents from 120mA to 250mA • Power amplifiers for DECT and PCN systems • Integrated emitter ballast resistor


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    PDF 120mA 250mA OT-223 BFG235 Q62702-F1432 900MHz marking code AC sot 23-5 marking BFG

    BFG235

    Abstract: No abstract text available
    Text: SIEMENS BFG 235 NPN Silicon RF Transistor • For low-distortion broadband output amplifier stages in antenna and telecommunications systems up to 2 GHz at collector currents from 120mA t<5 250mA • Power amplifiers for DECT and PCN systems • Integrated emitter ballast resistor


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    PDF 120mA 250mA Q62702-F1432 BFG235 OT-223 fi535b05 900MHz fl235bD5 BFG235

    Siemens pulse sequence

    Abstract: power supply siemens s5 Siemens diode Ssi
    Text: SIEMENS mmmmmmwm•■tWhP CGY 191 GaAs MMIC • • • • • Dual mode power amplifier for CDMA /TDMA portable cellular phones 29 dBm linear output power PAE=40% typ. Fully integrated 2 stage amplifier Power ramp control Input matched to 50 ohms, simple output match


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    PDF 62702G Siemens pulse sequence power supply siemens s5 Siemens diode Ssi

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFG135A NPN Silicon RF Transistor • For low-distortion broadband output amplifier stages in antenna and telecommunications systems up to 2 GHz at collector currents from 70mA to 130mA • Power amplifiers for DECT and PCN systems • Integrated emitter ballast resistor


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    PDF BFG135A 130mA BFG135A Q62702-F1322 OT-223 GlE17b4 900MHz 0S35bOS D1217b5

    Marking code 44t

    Abstract: No abstract text available
    Text: SIEMENS BXY44 HiRel Silicon PIN Diode Features • HiRel Discrete and Microwave Semiconductor • Current controlled RF resistor for RF attenuators and switches • High reverse voltage • Hermetically sealed microwave package esa qualified • ESA/SCC Detail Spec. No.: 5513/030


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    PDF BXY44 44-T1 44-T2 44-FP Marking code 44t