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    VQ1001P Price and Stock

    Vishay Siliconix VQ1001P

    MOSFET 4N-CH 30V 0.83A 14DIP
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    DigiKey VQ1001P Tube 25
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    Bristol Electronics VQ1001P 4
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    ComSIT USA VQ1001P 52
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    ES Components VQ1001P
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    Vishay Siliconix VQ1001P-2

    MOSFET 4N-CH 30V 0.83A 14DIP
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    DigiKey VQ1001P-2 Tube 25
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    Bristol Electronics VQ1001P-2 4 1
    • 1 $105.3
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    Quest Components VQ1001P-2 3
    • 1 $114.075
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    ES Components VQ1001P-2
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    Vishay Siliconix VQ1001P-E3

    MOSFET 4N-CH 30V 0.83A 14DIP
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    DigiKey VQ1001P-E3 Tube 25
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    SILI/85 VQ1001P-7

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    Bristol Electronics VQ1001P-7 100
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    Vishay Intertechnologies VQ1001P

    Transistor MOSFET Array Quad N-CH 30V 0.83A 14-Pin SBCDIP T/R (Alt: VQ1001P)
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    EBV Elektronik VQ1001P 26 Weeks 25
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    VQ1001P Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    VQ1001P Vishay Intertechnology Quad N-Channel 30-V (D-S) MOSFET Original PDF
    VQ1001P Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 4N-CH 30V 830MA 14DIP Original PDF
    VQ1001P Unknown Semiconductor Master Cross Reference Guide Scan PDF
    VQ1001P Unknown FET Data Book Scan PDF
    VQ1001P Unknown Shortform Datasheet & Cross References Data Short Form PDF
    VQ1001P Siliconix MOSPOWER Design Data Book 1983 Scan PDF
    VQ1001P Vishay Siliconix Shortform Siliconix Datasheet Short Form PDF
    VQ1001P-2 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 4N-CH 30V 830MA 14DIP Original PDF
    VQ1001P-E3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 4N-CH 30V 830MA 14DIP Original PDF

    VQ1001P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    VQ1001J

    Abstract: VQ1001P
    Text: VQ1001J/P Vishay Siliconix Quad N-Channel 30-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 1 @ VGS = 12 V 0.8 to 2.5 0.83 VQ1001P 1 @ VGS = 12 V 0.8 to 2.5 0.53 FEATURES BENEFITS APPLICATIONS D D D D D D D


    Original
    PDF VQ1001J/P VQ1001P VQ1001J S-04279--Rev. 16-Jul-01 VQ1001J VQ1001P

    n-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR

    Abstract: VQ1001P VQ1001 FAST DMOS FET Switches n-CHANNEL sired Switching Silicon Power P-channel Fast Data Book Supertex Quad
    Text: VQ1001 N-Channel Enhancement-Mode Vertical DMOS FET Quad Array Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) 30V 1.0Ω 2.0A Order Number / Package Quad Ceramic DIP* VQ1001P * 14 pin side brazed ceramic DIP Advanced DMOS Technology High Reliability Devices


    Original
    PDF VQ1001 VQ1001P n-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR VQ1001P VQ1001 FAST DMOS FET Switches n-CHANNEL sired Switching Silicon Power P-channel Fast Data Book Supertex Quad

    VQ1001J

    Abstract: VQ1001P
    Text: VQ1001J/P Siliconix NĆChannel EnhancementĆMode MOS Transistors Product Summary Part Number V BR DSS Min (V) VQ1001J 30 VQ1001P rDS(on) Max (W) VGS(th) (V) ID (A) 1 @ VGS = 12 V 0.8 to 2.5 0.83 1 @ VGS = 12 V 0.8 to 2.5 0.53 Features Benefits Applications


    Original
    PDF VQ1001J/P VQ1001J VQ1001P P-37655--Rev. VQ1001J VQ1001P

    VQ1001J

    Abstract: VQ1001P
    Text: VQ1001J/P N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) VQ1001J 30 VQ1001P rDS(on) Max (W) VGS(th) (V) ID (A) 1 @ VGS = 12 V 0.8 to 2.5 0.83 1 @ VGS = 12 V 0.8 to 2.5 0.53 Features Benefits Applications D D D D


    Original
    PDF VQ1001J/P VQ1001J VQ1001P S-52426--Rev. 14-Apr-97 VQ1001J VQ1001P

    Untitled

    Abstract: No abstract text available
    Text: VQ1001J/P Vishay Siliconix Quad N-Channel 30-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 1 @ VGS = 12 V 0.8 to 2.5 0.83 VQ1001P 1 @ VGS = 12 V 0.8 to 2.5 0.53 FEATURES BENEFITS APPLICATIONS D D D D D D D


    Original
    PDF VQ1001J/P VQ1001J VQ1001P 08-Apr-05

    VQ1001J

    Abstract: VQ1001P
    Text: VQ1001J/P N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) VQ1001J 30 VQ1001P rDS(on) Max (W) VGS(th) (V) ID (A) 1 @ VGS = 12 V 0.8 to 2.5 0.83 1 @ VGS = 12 V 0.8 to 2.5 0.53 Features Benefits Applications D D D D


    Original
    PDF VQ1001J/P VQ1001J VQ1001P S-52426--Rev. 14-Apr-97 VQ1001J VQ1001P

    VQ1001J

    Abstract: VQ1001P
    Text: VQ1001J/P Vishay Siliconix Quad N-Channel 30-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 1 @ VGS = 12 V 0.8 to 2.5 0.83 VQ1001P 1 @ VGS = 12 V 0.8 to 2.5 0.53 FEATURES BENEFITS APPLICATIONS D D D D D D D


    Original
    PDF VQ1001J/P VQ1001P VQ1001J 18-Jul-08 VQ1001J VQ1001P

    Untitled

    Abstract: No abstract text available
    Text: VQ1001 Çj Super tex inc. N-Channel Enhancement-Mode Vertical DMOS FET Quad Array Ordering Information Standard Commercial Devices BVdss/ BVpcs 30V f*DS ON) Order Number / Package • c kon ) (max) (min) Quad Ceramic DIP* 1.0Î1 2.0A VQ1001P * 1 4 pin side b ra zed ceram ic D IP


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    PDF VQ1001 VQ1001P

    VQ1001

    Abstract: No abstract text available
    Text: VQ1001 SERIES N-Channel Enhancement-Mode _MOS Transistor Arrays 14-PIN DIP SIDEBRAZE PRODUCT SUMMARY PART NUMBER V BR DSS VQ1001J 30 VQ1001P 30 TOP VIEW Dual-ln-Line Package •d (A) PACKAGE 1 0.83 Plastic 1 0.83 Sidebraze " w ¡T [I G1 [7


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    PDF VQ1001 VQ1001J VQ1001P 14-PIN VNDQ03

    52426

    Abstract: No abstract text available
    Text: T em ic VQIOOIJ/P S e m i c o n d u c t o r s N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V{BR DSS M in V) rDS(on) M a x (Q ) VGS(tht (V ) Id (A) 1 @ VGS- 12 V 0.8 to 2.5 0.83 ] @ VGs = 12 V 0.8 to 2.5 0.53 VQ1001J 30 VQ1001P


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    PDF VQ1001J VQ1001P S-52426-- 14-Apr-97 VQ1001J/P 52426

    Untitled

    Abstract: No abstract text available
    Text: VQ1001 N-Channel Enhancement-Mode Vertical DMOS FET Quad Array Ordering Information Order Number / Package b v dss/ ^D S O N b v dgs (max) (min) Quad Ceramic DIP* 30V 1.0Q 2.0A VQ1001P ^D(ON) * 14 pin side brazed ceram ic DIP Advanced DMOS Technology High Reliability Devices


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    PDF VQ1001 VQ1001P 300ns

    B0725

    Abstract: No abstract text available
    Text: Tem ic VQIOOIJ/P Siliconix N-Channel Enhancement-Mode MOS Transistors Product Summary Part Num ber V BR DSS M in (V) VQ1001J 30 VQ1001P Features Benefits • • • • • • • • • • Low On-Resistance: 0.85 Q Low Threshold: 1.4 V Low Input Capacitance: 38 pF


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    PDF VQ1001J VQ1001P VQ1001J/P P-37655--Rev. B0725

    A773* Transistor

    Abstract: fl7732c VQ1001P
    Text: VQ1001 ^ Supertex inc. N-Channel Enhancement-Mode Vertical DMOS FET Quad Array Ordering Information Order Number / Package BV DSS/ ^DS O N b v dgs (max) (min) Quad Ceramic DIP* 30V i.o a 2.0A VQ1001P ^D(ON) * 14 pin side brazed ceramic DIP Advanced DMOS Technology


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    PDF VQ1001 VQ1001P --25S2 A7732TS D00443Ô A773* Transistor fl7732c VQ1001P

    Untitled

    Abstract: No abstract text available
    Text: .BlSSSte VNDQ03 N-Channel Enhancement-Mode MOSFETs TYPE PACKAGE DEVICE Single TO-92 TO-226AA VN0300L, TN0201L, TN0401L Single TO-237 VN0300M Single 14-Pln Plastic • VQ1001J Quad 14-Pln Dual-ln-Une • VQ1001P Quad Chip • Available as VNDQ1CHP


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    PDF VNDQ03 VN0300L, TN0201L, TN0401L VN0300M VQ1001J VQ1001P O-226AA) O-237 14-Pln

    VQ1001

    Abstract: No abstract text available
    Text: T e m ic VQIOOIJ/P Siliconix N-Channel Enhancement-Mode MOS "Transistors Product Summary Part Num ber V BR DSS M in (V) VQ1001J rDS(on) M ax (Q ) 30 VQ1001P 1 @ VGS = 12 V 0.8 to 2.5 0.83 1 @ V GS= 12 V 0.8 to 2.5 0.53 Features Benefits Applications • •


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    PDF VQ1001J VQ1001P P-37655--Rev. VQ1001J/P VQ1001

    VQ1000P

    Abstract: VN10L siliconix VN10KM VN0610L VN10KE VN10KM VN10LE VN10LM VN2222L VQ1000J
    Text: MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdown Voltage (Volts) •d Continuous (Amps) 60 60 5.0 5.0 240 240 170 170 6.0 10.0 6.0 Power Dissipation (Watts) . Part Number 0.2 0.2 0.315 0.315 VN10KE VN10LE 0.3 0.25 0.3 0.25 0.3 0.25


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    PDF vn10ke vn10le to-52 vn2406m vn2410m VW1706M vn1710m vn1206m vn1210m vn0808m VQ1000P VN10L siliconix VN10KM VN0610L VN10KE VN10KM VN10LE VN10LM VN2222L VQ1000J

    buz 350 equivalent

    Abstract: VN0109n5 analog VN10KM equivalent supertex VN10KE VN67ad analog VN0300M equivalent VQ1004 equivalent vq1004 sony 2sj54 siliconix VN10KM
    Text: Siliconix 1-1? f l MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdown Voltage (Volts) •d Continuous (Amps) Power Dissipation (Watts) . Part Number 60 60 5.0 5.0 0.2 0.2 0.315 0.315 VN10KE VN10LE 240 240 170 170 10.0 6.0 0.3 0.25


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    PDF O-220 VN1000D IRF522 VN1000A IRF540 IRF632 IRF640 buz 350 equivalent VN0109n5 analog VN10KM equivalent supertex VN10KE VN67ad analog VN0300M equivalent VQ1004 equivalent vq1004 sony 2sj54 siliconix VN10KM

    VN0300M

    Abstract: siliconix VN10KM VN0606M 25XX VN0300D VP1001P VQ1001J VQ3001J VQ3001P VQ7254J
    Text: MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdown Voltage (Volts) 60 60 • d Continuous (Amps) Power Dissipation (Watts) . Part Number 5.0 5.0 0.2 0.2 0.315 0.315 VN10KE VN10LE 6.0 0.3 0.25 0.3 0.25 0.3 0.25 0.35 0.4 0.3 0.3 0.25


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    PDF vn10ke vn10le to-52 vn2406m vn2410m VW1706M vn1710m vn1206m vn1210m vn0808m VN0300M siliconix VN10KM VN0606M 25XX VN0300D VP1001P VQ1001J VQ3001J VQ3001P VQ7254J

    VN2410L equivalent

    Abstract: VN1210M equivalent VN2410L "cross reference" VN2410M VN0300M equivalent MTM8N20 VN1710M IRF340 IRF350 IRF450
    Text: 1-17 MOSPOWER Cross Reference List c « g s s <0J= i n i n m i n • - CM CM CM ^ • 'd d d o d 1o o o o o I m iD lO m | ' r r r 's ' I O O < O Ò I I I I I | ' ' ' lO ' I P ' ' ' ' I I j j CO00 COCO j j ' I o o r i mm | ioom m I L -^ ^ l I c\i CM i I I I I OOOO ' ' I


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    PDF ivn6100tnu to-39 ivn6200cnd to-220 vn0401d ivn6200cne t0-220 irf533 ivn6200cnf VN2410L equivalent VN1210M equivalent VN2410L "cross reference" VN2410M VN0300M equivalent MTM8N20 VN1710M IRF340 IRF350 IRF450

    2N6658

    Abstract: VN66AF siliconix VN10KM VN89AF VN88AF 2n6657 2N6656 VN67 VN80AF VN89AD
    Text: MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdow n V olta ge (Volts) 60 60 • d C on tin u ou s (Amps) Power D issipation (Watts) . Part Num ber 0.2 0.2 0.315 0.315 VN10KE VN10LE 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0


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    PDF vn10ke vn10le to-52 vn2406m vn2410m VW1706M vn1710m vn1206m vn1210m vn0808m 2N6658 VN66AF siliconix VN10KM VN89AF VN88AF 2n6657 2N6656 VN67 VN80AF VN89AD

    hh 004 TO92

    Abstract: VN2406M VN2406L vn1710m VN1206M VN1706M VN2406B siliconix VN10KM VN2410M VN1206L
    Text: MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdown Voltage (Volts) •d Continuous (Amps) Power Dissipation (Watts) . Part Number 60 60 5.0 5.0 0.2 0.2 0.315 0.315 VN10KE VN10LE 240 240 170 170 10.0 6.0 0.3 0.25 0.3 0.25 0.3 0.25 0.35


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    PDF vn10ke vn10le to-52 vn2406m vn2410m VW1706M vn1710m vn1206m vn1210m vn0808m hh 004 TO92 VN2406M VN2406L vn1710m VN1206M VN1706M VN2406B siliconix VN10KM VN2410M VN1206L

    siliconix VN10KM

    Abstract: VN10KM VN2222KM bsr65 BSR64 VN10LM VN2222LM VQ1000J/P VN0610L VN10KE
    Text: MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdown Voltage (Volts) 60 60 • d Continuous (Amps) Power Dissipation (Watts) . Part Number 0.2 0.2 0.315 0.315 VN10KE VN10LE 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 VN2406M


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    PDF vn10ke vn10le to-52 vn2406m vn2410m VW1706M vn1710m vn1206m vn1210m vn0808m siliconix VN10KM VN10KM VN2222KM bsr65 BSR64 VN10LM VN2222LM VQ1000J/P VN0610L VN10KE

    VN88AD

    Abstract: VN66AF 2N6658 VN89AF VN0808M VN88AO siliconix VN10KM VN46AF BSR67 VN89AD
    Text: MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdow n V olta ge (Volts) 60 60 • d C on tin u ou s (Amps) Power D issipation (Watts) . Part Num ber 5.0 5.0 0.2 0.2 0.315 0.315 VN10KE VN10LE 6.0 0.3 0.25 0.3 0.25 0.3 0.25 0.35 0.4 0.3


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    PDF vn10ke vn10le to-52 vn2406m vn2410m VW1706M vn1710m vn1206m vn1210m vn0808m VN88AD VN66AF 2N6658 VN89AF VN0808M VN88AO siliconix VN10KM VN46AF BSR67 VN89AD

    VN10KM equivalent

    Abstract: vn10km cross VN10LM "cross reference" siliconix VN10KM VN10lM equivalent VN0300M equivalent VN10KM ECS iss 400 VN10LE vn1710m
    Text: 1-17 MOSPOWER Cross Reference List c « g s s <0J= c P fi i n i n m i n • - CM CM CM ^ I m iD lO m • 'd d d o d ' r r r ' s 1o o o o o | I O O I I I P I I I | I I j j CO00 COCO j j ' I I I I OOOO ' ' I I o o r i mm | ioom m I ' < O Ò ' ' ' lO ' ' ' ' '


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    PDF ivn6100tnu to-39 ivn6200cnd to-220 vn0401d ivn6200cne t0-220 irf533 ivn6200cnf VN10KM equivalent vn10km cross VN10LM "cross reference" siliconix VN10KM VN10lM equivalent VN0300M equivalent VN10KM ECS iss 400 VN10LE vn1710m