Precon
Abstract: 857916 ACT245 EN-4088Z SN74ACT245N EPIC-1S
Text: TEXAS INSTRUMENTS Final Notification for the 150mm Diameter Wafer Qualification of the Sherman, Texas Wafer Fab February 19, 1999 Abstract The Texas Instruments Wafer Fabrication Facility in Sherman, Texas SFAB has completed the qualification to convert the wafer diameter from 125mm to 150mm for the EPIC-1S wafer fabrication
|
Original
|
150mm
125mm
DiH20Rn
260deg
Precon
857916
ACT245
EN-4088Z
SN74ACT245N
EPIC-1S
|
PDF
|
SQTP
Abstract: HDCP EEPROM 24xx eeprom SQTP checksum microchip 25LC040A eeprom interface EAR99 DS21808 spi 25xx smart card serial source code for eeprom 24LC
Text: Wafer Programming Service Purchasing HDCP Compliant EEPROM Wafers Secure Wafer Programming Service For HDCP Device Keys www.microchip.com Supporting Your HDCP Requirements Secure Wafer Programming Environment After your company has made a significant investment
|
Original
|
DS22000B
DS22000B*
SQTP
HDCP EEPROM
24xx eeprom
SQTP checksum
microchip 25LC040A eeprom interface
EAR99
DS21808
spi 25xx
smart card serial
source code for eeprom 24LC
|
PDF
|
IC weight sensor
Abstract: chloride ups circuit diagram relay 24v omron two leg infrared receiver led 12V ENERGY LIGHT CIRCUIT DIAGRAM EE-SPX303 hydrocarbon sensor hydrogen gas sensor omron plc Pulsating photoelectric Optical Sensor datasheet
Text: Wafer-carrier Mounting Photomicrosensors EE-SPY801/802 Photomicrosensors for detecting wafer-carrier mounting. • The mounting position is set with a pedestal. ■ The contact surface with the wafer carrier uses a special chemical-resistant fluoro-resin.
|
Original
|
EE-SPY801/802
EE-SPY801
IC weight sensor
chloride ups circuit diagram
relay 24v omron
two leg infrared receiver led
12V ENERGY LIGHT CIRCUIT DIAGRAM
EE-SPX303
hydrocarbon sensor
hydrogen gas sensor
omron plc
Pulsating photoelectric Optical Sensor datasheet
|
PDF
|
74LS04D
Abstract: mitsubishi lot code HBM 00-01 74ls04d datasheet TI Ji Bipolar LINEAR TECHNOLOGY date code JI Bipolar 500 mold compound JI Linear Bipolar Products TL 170C
Text: TEXAS INSTRUMENTS Final Notification of Mitsubishi Silicon of America MSA Second Source Wafer Qualification for Starting 125mm Substrates in Sherman, Texas Wafer Fab July 22, 1999 Abstract The Texas Instruments Wafer Fabrication Facility in Sherman, Texas (SFAB) has qualified Mitsubishi
|
Original
|
125mm
85C85
260deg
74LS04D
mitsubishi lot code
HBM 00-01
74ls04d datasheet
TI Ji Bipolar
LINEAR TECHNOLOGY date code
JI Bipolar
500 mold compound
JI Linear Bipolar Products
TL 170C
|
PDF
|
Untitled
Abstract: No abstract text available
Text: R Silicon Wafer Mapping Sensor F3M-S825-1 Allows Simultaneous Mapping of Up to 25 Silicon Wafers H Economical—one sensor detects most wafer types H 200 mm wafer size H Automatic and remote teaching capability H Self-diagnostic functions reduce downtime Ordering Information
|
Original
|
F3M-S825-1
35-mm
F3M-S825-1
F3M-S825-1,
1-800-55-OMRON
D063-E3-825
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PD- 91875A IRG4CC81KB IRG4CC81KB IGBT Die in Wafer Form C 600 V Size 8.1 Ultra-Fast Speed Short Circuit Rated G 6" Wafer E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage
|
Original
|
1875A
IRG4CC81KB
IRG4CC81KB
|
PDF
|
for IR IGBT die
Abstract: 300C IRG4CC71KB IRG4PSC71K MIL-HDBK-263
Text: PD- 91834A IRG4CC71KB IRG4CC71KB IGBT Die in Wafer Form C 600 V Size 7.1 Ultra-Fast Speed Circuit Rated Rated G 6" Wafer E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage
|
Original
|
1834A
IRG4CC71KB
IRG4CC71KB
for IR IGBT die
300C
IRG4PSC71K
MIL-HDBK-263
|
PDF
|
Untitled
Abstract: No abstract text available
Text: R Silicon Wafer Mapping Sensor F3M-S Allows Simultaneous Mapping of up to 25 Silicon Wafers H Economical, one sensor detects most wafer types, including dummy wafers H Models match wafer sizes of 300 mm, 200 mm and 150 mm H Automatic and remote teaching capability
|
Original
|
76-mm
F3M-S625
F3M-S626
F3M-S825
F3M-S826
F3M-S1213
F3M-S1225
35-roperties
1-800-55-OMRON
|
PDF
|
OCI 531
Abstract: m1b marking s1225 IEC60529 F3M-S1213 F3M-S1225
Text: R Silicon Wafer Mapping Sensor F3M-S Allows Simultaneous Mapping of up to 25 Silicon Wafers H Economical, one sensor detects most wafer types, including dummy wafers H Models match wafer sizes of 300 mm, 200 mm and 150 mm H Automatic and remote teaching capability
|
Original
|
76-mm
F3M-S625
35-mm
F3M-S626
F3M-S825
F3M-S826
F3M-S1213
1-800-55-OMRON
OCI 531
m1b marking
s1225
IEC60529
F3M-S1213
F3M-S1225
|
PDF
|
IRFC24N15DB
Abstract: No abstract text available
Text: PD - 94750 IRFC24N15DB HEXFET Power MOSFET Die in Wafer Form N-CH l l G S Key Electrical Characteristics Packaged Part c Parameter Description 150V RDS(on) = 95mΩ (max.) 6" Wafer D 100% Tested at Probe Available in Chip Pack, Unsawn Wafer Sawn on Film
|
Original
|
IRFC24N15DB
95film
IRFC24N15DB
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PD - 95844 IRFC61N15DB D HEXFET Power MOSFET Die in Wafer Form l l 100% Tested at Probe Available in Tape and Reel, Unsawn Wafer, Sawn on Film G 150V RDS on = 0.032Ω (max.) 6" Wafer S Key Electrical Characteristics (TO-220 package)d Parameter
|
Original
|
IRFC61N15DB
O-220
100nA
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PD - 94786 IRFCG20B HEXFET Power MOSFET Die in Wafer Form l l D 100% Tested at Probe Available in Chip Pack, Unsawn Wafer Sawn on Film G 1000V RDS on = 11Ω (max.) 5" Wafer S Key Electrical Characteristics (TO-220 Packaged Part)c Parameter Description
|
Original
|
IRFCG20B
O-220
12-Mar-07
|
PDF
|
irfp4332
Abstract: irfp4332 mosfet IRFB4332
Text: PD - 97139 IRFC4332B PDP MOSFET HEXFET Power MOSFET Die in Wafer Form l l D 100% Tested at Probe Available in Chip Pack, Unsawn wafer, Sawn on Film 250V RDS on = 0.033Ω (max.) 6" Wafer G S Key Electrical Characteristics (TO-220 package)d Parameter
|
Original
|
IRFC4332B
O-220
irfp4332
irfp4332 mosfet
IRFB4332
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PD - 94786 IRFCG20B HEXFET Power MOSFET Die in Wafer Form l l D 100% Tested at Probe Available in Chip Pack, Unsawn Wafer Sawn on Film G 1000V RDS on = 11Ω (max.) 5" Wafer S Key Electrical Characteristics (TO-220 Packaged Part)c Parameter Description
|
Original
|
IRFCG20B
O-220
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: PD - 94766 IRFC054VB HEXFET Power MOSFET Die in Wafer Form l l D 100% Tested at Probe Available in Chip Pack, Unsawn wafer Sawn on Film G 60V RDS on = 9.0mΩ (max.) 6" Wafer S Electrical Characteristics (TO-247) Parameter V(BR)DSS RDS(on) VGS(th)
|
Original
|
IRFC054VB
O-247)
100nA
|
PDF
|
IRFP32N50K equivalent
Abstract: No abstract text available
Text: PD - 94730 IRFC32N50KB D HEXFET 500V RDS on = 0.16Ω (max.) 6" Wafer Power MOSFET Die in Wafer Form 100% Tested at Probe Available in Chip Pack, Unsawn wafer, Sawn on Film Key Electrical Characteristics (TO-247 package) l G l Parameter V(BR)DSS RDS(on)
|
Original
|
IRFC32N50KB
O-247
100nA
IRFP32N50K equivalent
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PD - 95883 IRGC4050 IRGC4050 IGBT Die in Wafer Form l l C 100% Tested at Probe Available in Chip Pack, Unsawn Wafer Sawn on Film 250V VCE on = 1.90V (max.) 6" Wafer G E Key Electrical Characteristics (TO-247 package) Parameter V(BR)CES VCE(ON) VGE(th)
|
Original
|
IRGC4050
IRGC4050
O-247
|
PDF
|
E5-1101
Abstract: wafer prober AN115013 WM-40X0 SECS II wafer map format wafer map format wafer map 3d01
Text: AN115013 SECS II wafer map format Rev. 1.3 — 1 July 2009 Application note Document information Info Content Keywords wafer mapping, SECS II format, electronic inking Abstract This document gives a short guideline how to interpret wafer maps in SECS II format delivered with wafers by Business Line Identification.
|
Original
|
AN115013
E5-1101
wafer prober
AN115013
WM-40X0
SECS II wafer map format
wafer map format
wafer map
3d01
|
PDF
|
IRFP460N equivalent
Abstract: No abstract text available
Text: PD - 94774 IRFC460NB HEXFET Power MOSFET Die in Wafer Form l l D 100% Tested at Probe Available in Chip Pack, Unsawn Wafer Sawn on Film G 500V RDS on = 0.24Ω (max.) 6" Wafer S Electrical Characteristics (TO-247 Package) Parameter V(BR)DSS RDS(on)
|
Original
|
IRFC460NB
O-247
100nA
IRFP460N equivalent
|
PDF
|
for IR IGBT die
Abstract: No abstract text available
Text: PD - 95859 IRG4C254SB IRG4C254SB IGBT Die in Wafer Form l l C 100% Tested at Probe Available in Chip Pack, Unsawn Wafer Sawn on Film 250V VCE on = 1.5V (max.) 6" Wafer G E Key Electrical Characteristics (TO-247 package) Parameter V(BR)CES VCE(ON) VGE(th)
|
Original
|
IRG4C254SB
IRG4C254SB
O-247
for IR IGBT die
|
PDF
|
IRL2203N equivalent
Abstract: No abstract text available
Text: PD - 94751A IRLC2203NB N-CH HEXFET Power MOSFET Die in Wafer Form D 100% Tested at Probe Available in Chip Pack, Unsawn Wafer Sawn on Film Ultra Low On-Resistance l l l G 30V RDS on = 0.007Ω (max.) 6" Wafer S Key Electrical Characteristics (Packaged Part)c
|
Original
|
4751A
IRLC2203NB
IRL2203N equivalent
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PD - 94770 IRFC2204B HEXFET Power MOSFET Die in Wafer Form N-CH D l l 100% Tested at Probe Available in Chip Pack, Unsawn Wafer Sawn on Film G 40V RDS on = 3.6mΩ (max.) 6" Wafer S Key Electrical Characteristics (Packaged Part)c Min. Typ. Max. Test Conditions
|
Original
|
IRFC2204B
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PD - 94751 IRLC2203NB N-CH HEXFET Power MOSFET Die in Wafer Form D 100% Tested at Probe Available in Chip Pack, Unsawn Wafer Sawn on Film Ultra Low On-Resistance l l l G 30V RDS on = 0.007Ω (max.) 6" Wafer S Key Electrical Characteristics (Packaged Part)c
|
Original
|
IRLC2203NB
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PD - 97077 IRLC3103B HEXFET Power MOSFET Die in Wafer Form l l D 100% Tested at Probe Available in Chip Pack, Unsawn wafer, Sawn on Film G 30V RDS on = 0.019Ω (max.) 6" Wafer S Key Electrical Characteristics @TJ=25°C (unless otherwise specified) (D-Pak package)d
|
Original
|
IRLC3103B
|
PDF
|
