MARKING WB1
Abstract: marking 18T Marking W3 18T MARKING WB1 MARKING MARKING W1 Marking ON TS93XXT3 MTVA
Text: l ~ ~ TSO3XX [] PLANER & TT3XXX PLANER ~ REF417 SCREENED dB VALUE BLACK ~ d B GREEN DOT ADD .5dB . TOP SIDE BOTTOM TSO3XXW1/WB1 GREEN DOT ADDS .5 dB SCREENED dB VALUE rl ~ (WHITE) U ~ TOP SIDE BOTTOM TSO3XXW3 ~ ~ r~~~ SCREENED dB VALUE (BLACK) bzJ O ~~-
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REF417
TS93XXT3
MARKING WB1
marking 18T
Marking W3
18T MARKING
WB1 MARKING
MARKING W1
Marking ON
TS93XXT3
MTVA
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ts0505
Abstract: marking code wb1 mw 772 TS05XXW1 TS05XXW3 ts0506 TS0503 TS05 TS0518 TS0509
Text: Attenuators Introduction Features • Substrate - Alumina • Power Rating - 0.1 to 2 Watts • Frequency Range DC to 18 GHz • Tape and Reel Packaging Available • VSWR under 1.50:1 • Variety of Chip Sizes • Attenuation Values from 1 to 20 dB in 1 dB increments; consult the factory
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TS0500
TS0501
TS0502
TS0503
TS0504
TS0505
TS0506
TS0507
TS0508
TS0509
marking code wb1
mw 772
TS05XXW1
TS05XXW3
TS05
TS0518
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tva0300n07
Abstract: mmic amplifier marking code N10 MTVA0300N05 PST-02-A-1 TVA0300N07W3 electronic passive components catalog SC-1016 MTVA0300 SMT2010TALN 42TVA
Text: EMC TECHNOLOGY Custom Engineered Solutions 8851 SW Old Kansas Ave. 772 286-9300 ISO 9001 & 14001 Certified M I C R OWAV E C O M P O N E N T S www.emct.com Resistive Products, Smart Loads , High Reliability Stuart, FL 34997 (800) 544-5594 Thermopads®, Equalizers,
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Rev. 7, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9045MR1 MRF9045MBR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these
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MRF9045MR1)
MRF9045MR1
MRF9045MBR1
MRF9045MBR1)
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MRF9030NR1
Abstract: marking z17 100B470JP
Text: Freescale Semiconductor Technical Data Rev. 7, 1/2005 RF Power Field Effect Transistors MRF9030NR1 MRF9030MR1 MRF9030MBR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these
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MRF9030MBR1)
MRF9030NR1
MRF9030MR1
MRF9030MBR1
marking z17
100B470JP
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Replaced by MRF9030NR1/NBR1. There are no form, fit or function changes with this part MRF9030M Rev. 9, 5/2006 replacement. N suffix added to part number to indicate transition to lead - free terminations. RF Power Field Effect Transistors
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MRF9030NR1/NBR1.
MRF9030M
MRF9030MR1
MRF9030MBR1
MRF9030MR1
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MRF9060L
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Rev. 8, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9060LR1 MRF9060LSR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these
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MRF9060LR1
MRF9060LSR1
MRF9060L
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data MRF9045MR1 Rev. 9, 5/2006 Replaced by MRF9045NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations. MRF9045MR1
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MRF9045MR1
MRF9045NR1/NBR1.
MRF9045MBR1
MRF9045MR1
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TO-270-2
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data MRF9030M Rev. 8, 3/2005 RF Power Field Effect Transistors MRF9030NR1 MRF9030NBR1 MRF9030MR1 MRF9030MBR1 N−Channel Enhancement−Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these
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MRF9030M
MRF9030NR1
MRF9030NBR1
MRF9030MR1
MRF9030MBR1
TO-270-2
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MRF9045N
Abstract: 945 TRANSISTOR AN1955 EB212 MRF9045MR1 MRF9045NR1 A113 6020G marking wb2 MRF9045
Text: Freescale Semiconductor Technical Data Document Number: MRF9045N Rev. 12, 9/2008 RF Power Field Effect Transistor MRF9045NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device
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MRF9045N
MRF9045NR1
MRF9045N
945 TRANSISTOR
AN1955
EB212
MRF9045MR1
MRF9045NR1
A113
6020G
marking wb2
MRF9045
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VIPer 32
Abstract: MARKING WB1 viper gate control circuits MRF9030M VIPER 300 series A113 MRF9030MBR1 MRF9030MR1 marking z17
Text: Freescale Semiconductor Technical Data Replaced by MRF9030NR1/NBR1. There are no form, fit or function changes with this part MRF9030M Rev. 9, 5/2006 replacement. N suffix added to part number to indicate transition to lead - free terminations. RF Power Field Effect Transistors
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MRF9030NR1/NBR1.
MRF9030M
MRF9030MR1
MRF9030MBR1
MRF9030MR1
VIPer 32
MARKING WB1
viper gate control circuits
MRF9030M
VIPER 300 series
A113
MRF9030MBR1
marking z17
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Untitled
Abstract: No abstract text available
Text: Document Number: MRF9045N Rev. 12, 9/2008 Freescale Semiconductor Technical Data RF Power Field Effect Transistor MRF9045NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device
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MRF9045N
MRF9045NR1
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF9045N Rev. 11, 9/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF9045NBR1 • Typical Performance at 945 MHz, 28 Volts Output Power — 45 Watts PEP Power Gain — 19 dB
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MRF9045N
MRF9045NBR1
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MRF9045N
Abstract: A113 MRF9045MR1 MRF9045NBR1 MRF9045NR1 MARKING WB1 6020G
Text: Freescale Semiconductor Technical Data Document Number: MRF9045N Rev. 10, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9045NR1 MRF9045NBR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these
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MRF9045N
MRF9045NR1
MRF9045NBR1
MRF9045NR1
MRF9045N
A113
MRF9045MR1
MRF9045NBR1
MARKING WB1
6020G
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0805 capacitor 10 pf
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Rev. 5, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for large - signal, common source amplifier applications in 26 volt base station equipment.
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MRF9080LR3
MRF9080LSR3
0805 capacitor 10 pf
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Rev. 10, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9085LR3 MRF9085LSR3 Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance
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MRF9085LR3
MRF9085LSR3
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MRF9060MR1
Abstract: 93F2975
Text: Freescale Semiconductor Technical Data Rev. 7, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9060MR1 MRF9060MBR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these
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MRF9060MR1
MRF9060MBR1
93F2975
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MARKING WB1
Abstract: marking us capacitor pf l1 marking Z4 wb1 99 A113 MRF9045MBR1 MRF9045MR1
Text: Freescale Semiconductor Technical Data MRF9045MR1 Rev. 9, 5/2006 Replaced by MRF9045NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations. MRF9045MR1
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MRF9045MR1
MRF9045NR1/NBR1.
MRF9045MBR1
MRF9045MR1
MARKING WB1
marking us capacitor pf l1
marking Z4
wb1 99
A113
MRF9045MBR1
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MRF9030N
Abstract: wb1 99 MRF9030NBR1 A113 MRF9030NR1 marking wb2
Text: Freescale Semiconductor Technical Data Document Number: MRF9030N Rev. 10, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9030NR1 MRF9030NBR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these
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MRF9030N
MRF9030NR1
MRF9030NBR1
MRF9030NR1
MRF9030N
wb1 99
MRF9030NBR1
A113
marking wb2
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Untitled
Abstract: No abstract text available
Text: WB1 HEW LETT mLnM P A C K A R D 1 GHz Low Noise Silicon MMIC Amplifier Technical Data INA-50311 Features • Internally Biased, Single 5 V Supply 17 mA • 19 dB Gain • 3.6 dB NF • Unconditionally Stable SOT-143 Surface Mount Package Description Pin Connections and
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INA-50311
OT-143
INA-50311
self-aligb30
INA-30/50
INA-50311-TRI
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TS05XXW3
Abstract: TS0500 marking code wb1 TS05XX ts0506 TS0507 EMC TS-050
Text: ATTENUATORS THIN FILM CHIP ATTENUATORS GENERAL INFORMATION GENERAL SPECIFICATIONS: The TS03XX and TS05XX chip attenuators consist of a thin film Impedance: 50 Q element on an alumina ceramic substrate with solderable terminals Operating Temperature: -55°C to +150°C
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TS03XX
TS05XX
TS0300
TS0500
TS03XX,
TS03XXW3,
TS05XX,
TS0500WB1
TS05XXW3
marking code wb1
ts0506
TS0507 EMC
TS-050
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Untitled
Abstract: No abstract text available
Text: THIN FILM CHIP ATTENUATORS GENERAL INFORMATION GENERAL SPECIFICATIONS: The TS03XX and TS05XX chip attenuators consist of a thin film element on an alumina ceramic substrate with solderable terminals in two sizes. The larger TS03XX Series operates to 12.4 GHz and the
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TS03XX
TS05XX
TS0518
TS0519
TS0520
TS0510
TS0300
TS0500
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ts0505
Abstract: ts0506 TS03XX
Text: ATTENUATORS gg THIN FILM CHIP ATTENUATORS GENERAL INFORMATION GENERAL SPECIFICATIONS: The TS03XX and TS05XX chip attenuators consist of a thin film element on an alumina ceramic substrate with solderable terminals in two sizes. The larger TS03XX Series operates to 12.4 GHz and the
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TS03XX
TS05XX
TS0300
TS0500
TS03XX,
TS03XXW3,
TS05XX,
TS05XXW1,
ts0505
ts0506
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ts0505
Abstract: TS0503 TS0506 marking code wb1 TS0510 TS0504
Text: A ttenuators General Specifications Teclutologi/ TS05 M arking Code Part # dB Value TS0500 TS0501 TS0502 TS0503 TS0504 TS0505 TS0506 TS0507 TS0508 TS0509 TS0510 TS0511 TS0512 TS0513 TS0514 TS0515 TS0516 TS0517 TS0518 TS0519 TS0520 0 dB 1 dB 2 dB 3 dB 4 dB
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TS0500
TS0501
TS0502
TS0503
TS0504
TS0505
TS0506
TS0507
TS0508
TS0509
marking code wb1
TS0510
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