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    Delta Electronics Inc LNE-24V600WBGA

    LED DRIVER
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    DigiKey LNE-24V600WBGA Box 7 1
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    Mouser Electronics LNE-24V600WBGA
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    RS LNE-24V600WBGA Bulk 32 Weeks 6
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    Maxim Integrated Products DS4000GW-WBGA

    IC OSC TCXO 16.8MHZ 24-BGA
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    Maxim Integrated Products DS4000G0-WBGA

    IC OSC TCXO 16MHZ 24-BGA
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    Maxim Integrated Products DS4000GF-WBGA

    IC OSC TCXO 16.384MHZ 24-BGA
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    Maxim Integrated Products DS32KHZ-WBGA-

    32.768KHZ TEMP-COMPENSATED XSTL
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    DigiKey DS32KHZ-WBGA- Tray 220
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    WBGA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MOSEL VITELIC V54C3256 16/80/40 4V(T/S/B) 256Mbit SDRAM 3.3 VOLT, TSOP II / SOC / WBGA PACKAGE 16M X 16, 32M X 8, 64M X 4 PRELIMINARY 6 7PC 7 8PC System Frequency (fCK) 166 MHz 143 MHz 143 MHz 125 MHz Clock Cycle Time (tCK3) 6 ns 7 ns 7 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3


    Original     		PDF V54C3256 256Mbit x16Mbit

    V54C3256

    Abstract: V54C3256164VAB V54C3256164VAT V54C3256164VBT V54C3256404VAB V54C3256404VAT V54C3256404VBT V54C3256804VAB V54C3256804VAT V54C3256804VBT
    Text: MOSEL VITELIC V54C3256 16/80/40 4V(T/S/B) 256Mbit SDRAM 3.3 VOLT, TSOP II / SOC BGA / WBGA PACKAGE 16M X 16, 32M X 8, 64M X 4 PRELIMINARY 6 7PC 7 8PC System Frequency (fCK) 166 MHz 143 MHz 143 MHz 125 MHz Clock Cycle Time (tCK3) 6 ns 7 ns 7 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3


    Original     		PDF V54C3256 256Mbit 16Mbit V54C3256164VAB V54C3256164VAT V54C3256164VBT V54C3256404VAB V54C3256404VAT V54C3256404VBT V54C3256804VAB V54C3256804VAT V54C3256804VBT

    V54C3256804V

    Abstract: No abstract text available
    Text: MOSEL VITELIC V54C3256 16/80/40 4V(T/S/B) 256Mbit SDRAM 3.3 VOLT, TSOP II / SOC / WBGA PACKAGE 16M X 16, 32M X 8, 64M X 4 PRELIMINARY 6 7PC 7 8PC System Frequency (fCK) 166 MHz 143 MHz 143 MHz 125 MHz Clock Cycle Time (tCK3) 6 ns 7 ns 7 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3


    Original     		PDF V54C3256 256Mbit x16Mbit V54C3256804V

    V54C3256164

    Abstract: V54C3256804
    Text: MOSEL VITELIC V54C3256 16/80/40 4V(T/S/B) 256Mbit SDRAM 3.3 VOLT, TSOP II / SOC / WBGA PACKAGE 16M X 16, 32M X 8, 64M X 4 PRELIMINARY 6 7PC 7 8PC System Frequency (fCK) 166 MHz 143 MHz 143 MHz 125 MHz Clock Cycle Time (tCK3) 6 ns 7 ns 7 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3


    Original     		PDF V54C3256 256Mbit x16Mbit V54C3256164 V54C3256804

    Untitled

    Abstract: No abstract text available
    Text: 256MB 144PIN PC100 CL2 SDRAM DIMM With 16M X 8 3.3VOLT TS32MSS64V8L2 Description The TS32MSS64V8L2 is a 32M bit x 64 Synchronous Dynamic RAM high density memory module. Dimension The TS32MSS64V8L2 consists of 16 pieces of CMOS 16Mx8bits Synchronous DRAMs in WBGA packages and a


    Original     		PDF 256MB 144PIN PC100 TS32MSS64V8L2 TS32MSS64V8L2 16Mx8bits 144-pin

    V54C3256164VBT

    Abstract: V54C3256 V54C3256164VAB V54C3256164VAT V54C3256404VAB V54C3256404VAT V54C3256404VBT V54C3256804VAB V54C3256804VAT V54C3256804VBT
    Text: MOSEL VITELIC V54C3256 16/80/40 4V(T/S/B) 256Mbit SDRAM 3.3 VOLT, TSOP II / SOC / WBGA PACKAGE 16M X 16, 32M X 8, 64M X 4 PRELIMINARY 6 7PC 7 8PC System Frequency (fCK) 166 MHz 143 MHz 143 MHz 125 MHz Clock Cycle Time (tCK3) 6 ns 7 ns 7 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3


    Original     		PDF V54C3256 256Mbit 16Mbit V54C3256164VBT V54C3256164VAB V54C3256164VAT V54C3256404VAB V54C3256404VAT V54C3256404VBT V54C3256804VAB V54C3256804VAT V54C3256804VBT

    Untitled

    Abstract: No abstract text available
    Text: MOSEL VITELIC V54C3256 16/80/40 4V(T/S/B) 256Mbit SDRAM 3.3 VOLT, TSOP II / SOC / WBGA PACKAGE 16M X 16, 32M X 8, 64M X 4 PRELIMINARY 6 7PC 7 8PC System Frequency (fCK) 166 MHz 143 MHz 143 MHz 125 MHz Clock Cycle Time (tCK3) 6 ns 7 ns 7 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3


    Original     		PDF V54C3256 256Mbit 16Mbit

    K4R571669A-FCK8

    Abstract: K4R881869A-FCK8 K4R881869A-FCM8 K4R881869A-FCM9 K4R881869A-FCN9 K4R881869A-FCT9
    Text: Direct RDRAM K4R571669A/K4R881869A 256/288Mbit RDRAM A-die 512K x 16/18bit x 32s banks Direct RDRAMTM Version 1.4 July 2002 Page -1 Version 1.4 July 2002 Direct RDRAM™ K4R571669A/K4R881869A Change History Version 1.11( September 2001) - Preliminary


    Original     		PDF K4R571669A/K4R881869A 256/288Mbit 16/18bit 1066MHz 260mV 300mV 800MHz 1066MHz 256/288Mb) K4R571669A-FCK8 K4R881869A-FCK8 K4R881869A-FCM8 K4R881869A-FCM9 K4R881869A-FCN9 K4R881869A-FCT9

    K4R271669F

    Abstract: No abstract text available
    Text: Direct RDRAM K4R271669F 128Mbit RDRAM F-die 256K x 16 bit x 32s Banks Direct RDRAMTM Version 1.41 January 2004 Page -1 Version 1.41 Jan. 2004 Direct RDRAM™ K4R271669F Change History Version 1.4 ( September 2003 ) - First Copy ( Version 1.4 is named to unify the version of component and device operation datasheets)


    Original     		PDF K4R271669F 128Mbit K4R271669F

    K4R271669E

    Abstract: No abstract text available
    Text: Preliminary Direct RDRAM K4R271669E 128Mbit RDRAM E-die 256K x 16 bit x 32s Banks Direct RDRAMTM Version 1.4 July 2002 Page -1 Version 1.4 July 2002 Preliminary Direct RDRAM™ K4R271669E Change History Version 1.4 ( July 2002 ) - Preliminary - First Copy ( Version 1.4 is named to unify the version of component and device operation datasheets)


    Original     		PDF K4R271669E 128Mbit K4R271669E

    code A106

    Abstract: MD18R3268AG0-CM8 MD18R3268AG0-CN1 MD18R3268AG0-CT9 MD18R326GAG0-CM8 MD18R326GAG0-CN1 MD18R326GAG0-CT9 serial presence detect samsung 2010 MARKING A106
    Text: Preliminary MD18R3268 G AG0 Change History Version 0.1 (Sept. 2003)- Preliminary * First copy. * Based on version 1.0 (July 2002) 256/288Mbit D-die 32 Bit RIMM Module Datasheet Version 0.1 Sept. 2003 MD18R3268(G)AG0 Preliminary (32Mx18)*8(16)pcs 32 Bit RIMM Module based on 576Mb A-die, 32s banks,32K/32ms Ref, 2.5V


    Original     		PDF MD18R3268 256/288Mbit 32Mx18) 576Mb 32K/32ms code A106 MD18R3268AG0-CM8 MD18R3268AG0-CN1 MD18R3268AG0-CT9 MD18R326GAG0-CM8 MD18R326GAG0-CN1 MD18R326GAG0-CT9 serial presence detect samsung 2010 MARKING A106

    K8D3216UBC-pi07

    Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
    Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM


    Original     		PDF BR-05-ALL-002 K8D3216UBC-pi07 K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm

    K4R271669E-RcCS8

    Abstract: K4R271669E
    Text: Direct RDRAM K4R271669E 128Mbit RDRAM E-die 256K x 16 bit x 32s Banks Direct RDRAMTM Version 1.4 July 2002 Page -1 Version 1.4 July 2002 Direct RDRAM™ K4R271669E Change History Version 1.4 ( July 2002 ) - First Copy ( Version 1.4 is named to unify the version of component and device operation datasheets)


    Original     		PDF K4R271669E 128Mbit K4R271669E-RcCS8 K4R271669E

    Untitled

    Abstract: No abstract text available
    Text: TMS320DM6446 www.ti.com SPRS283H – DECEMBER 2005 – REVISED SEPTEMBER 2010 TMS320DM6446 Digital Media System-on-Chip Check for Samples: TMS320DM6446 1 Digital Media System-on-Chip DMSoC 1.1 Features 12 • High-Performance Digital Media SoC – 513-, 594-, 810-MHz C64x+ Clock Rates


    Original     		PDF TMS320DM6446 SPRS283H 810-MHz 405-MHz ARM926EJ-Sâ 32-Bit TMS320C64x+ 32-/40-Bit)

    W971GG6JB

    Abstract: 8X12 DDR2-667 DDR2-800 0A80
    Text: W971GG6JB 8M  8 BANKS  16 BIT DDR2 SDRAM Table of Contents1. GENERAL DESCRIPTION . 4 2. FEATURES . 4


    Original     		PDF W971GG6JB W971GG6JB 8X12 DDR2-667 DDR2-800 0A80

    Untitled

    Abstract: No abstract text available
    Text: TMS320DM6437 Digital Media Processor www.ti.com SPRS345D – NOVEMBER 2006 – REVISED JUNE 2008 1 TMS320DM6437 Digital Media Processor 1.1 Features • • • • High-Performance Digital Media Processor DM6437 – 2.5-, 2.-, 1.67-, 1.51-, 1.43-ns Instruction


    Original     		PDF TMS320DM6437 SPRS345D DM6437) 43-ns 700-MHz 32-Bit TMS320C64x 32-/40-Bit) 32-Bit,

    Untitled

    Abstract: No abstract text available
    Text: SM320DM6446 Digital Media System-on-Chip www.ti.com SPRS607A – JUNE 2009 – REVISED JUNE 2009 1 Digital Media System-on-Chip DMSoC 1.1 Features • • • • High-Performance Digital Media SoC – 594-MHz C64x+ Clock Rates – 297-MHz ARM926EJ-S™ Clock Rates


    Original     		PDF SM320DM6446 SPRS607A 594-MHz 297-MHz ARM926EJ-STM 32-Bit TMS320C64x 32-/40-Bit) 32-Bit, 16-Bit,

    TMS320DM3x

    Abstract: DM357 tc 4518 bp 1608 1a60 BT 1610 digital volume control elektronik DDR TMS320DM6437 Evaluation Module TMS320DM357
    Text: TMS320DM357 Digital Media System-on-Chip www.ti.com SPRS553 – NOVEMBER 2008 1 Digital Media System-on-Chip DMSoC 1.1 Features • • • • • • • High-Performance Digital Media SoC – 270-MHz ARM926EJ-S Core – Fully Software-Compatible With ARM9™


    Original     		PDF TMS320DM357 SPRS553 270-MHz ARM926EJ-STM ARM926EJ-S 32-Bit 16-Bit 16K-Byte 264/MPEG4/JPEG TMS320DM3x DM357 tc 4518 bp 1608 1a60 BT 1610 digital volume control elektronik DDR TMS320DM6437 Evaluation Module

    Untitled

    Abstract: No abstract text available
    Text: W632GU6KB 16M  8 BANKS  16 BIT DDR3L SDRAM Table of Contents1. GENERAL DESCRIPTION . 5 2. FEATURES . 5


    Original     		PDF W632GU6KB

    Untitled

    Abstract: No abstract text available
    Text: W631GU6KB 8M  8 BANKS  16 BIT DDR3L SDRAM Table of Contents1. GENERAL DESCRIPTION . 5 2. FEATURES . 5


    Original     		PDF W631GU6KB

    dax6

    Abstract: Mobile SDRAM
    Text: V55C1256164MG 256Mbit MOBILE SDRAM 1.8 VOLT, TSOP II / FBGA PACKAGE 16M X 16 75 9 10 System Frequency fCK 133 MHz 111 MHz 100MHz Clock Cycle Time (tCK3) 7.5ns 9.0 ns 10 ns Clock Access Time (tAC3) CAS Latency = 3 6.0 ns 7.0 ns 8.0ns • Available in 54-ball FBGA (with 9x6 ball array


    Original     		PDF V55C1256164MG 256Mbit 100MHz dax6 Mobile SDRAM

    DS4000

    Abstract: DS4000N J-STD-020A
    Text: DS4000 Digitally Controlled TCXO www.maxim-ic.com GENERAL DESCRIPTION FEATURES The DS4000 digitally controlled temperature-compensated crystal oscillator DC-TCXO features a digital temperature sensor, one fixed-frequency temperaturecompensated square-wave


    Original     		PDF DS4000 DS4000 10ppm DS4000N J-STD-020A

    K4H560838C-TCB3

    Abstract: DDR200 DDR266A DDR266B DDR333 k4h560838ctcb3
    Text: 256Mb C-die x4/8 DDR SDRAM DDR SDRAM Specification Version 0.7 - 1 - REV. 0.7 Jan. 31. 2002 256Mb C-die(x4/8) DDR SDRAM Revision History Version 0 (May, 2001) - First version for internal review of 256Mb C-die. Version 0.1 (July, 2001) - Updated target current spec(TSOP package base)


    Original     		PDF 256Mb K4H560838C-TCB3 DDR200 DDR266A DDR266B DDR333 k4h560838ctcb3

    NT5CB64M16AP-CF

    Abstract: nt5cb64m16 NT5CB64M16AP-CG NT5CB64M16AP nanya NT5CB64M16AP NT5CB64m NT5CB64M16AP-BE nt5cb64m16ap-dh MPR 20 20 CF RESISTOR NT5CB64M16AP-AC
    Text: 1Gb DDR3 SDRAM A-Die NT5CB256M4AN / NT5CB128M8AN / NT5CB64M16AP Feature  Write Leveling  1.5V ± 0.075V JEDEC Standard Power Supply  OCD Calibration  8 Internal memory banks (BA0- BA2)  Dynamic ODT (Rtt_Nom & Rtt_WR)  Differential clock input (CK, )


    Original     		PDF NT5CB256M4AN NT5CB128M8AN NT5CB64M16AP 60-Ball 84-Ball NT5CB64M16AP-CF nt5cb64m16 NT5CB64M16AP-CG NT5CB64M16AP nanya NT5CB64M16AP NT5CB64m NT5CB64M16AP-BE nt5cb64m16ap-dh MPR 20 20 CF RESISTOR NT5CB64M16AP-AC