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    WRITE PROGRAMM CYCLE Search Results

    WRITE PROGRAMM CYCLE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    AM27S25DM Rochester Electronics LLC OTP ROM Visit Rochester Electronics LLC Buy
    AM27C256-55PC Rochester Electronics LLC OTP ROM, Visit Rochester Electronics LLC Buy
    AMPAL20L10APC Rochester Electronics LLC PLD Visit Rochester Electronics LLC Buy
    PAL16R8-4JC-UNPROGRAMMED Rochester Electronics LLC PAL16R8-4JC-UNPROGRAMMED Visit Rochester Electronics LLC Buy
    AM27C010-55PI-G Rochester Electronics AM27C010 - EPROM - OTP, EPROM - UV 1Mbit 128k x 8 Visit Rochester Electronics Buy

    WRITE PROGRAMM CYCLE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    bc 331

    Abstract: siemens sda
    Text: S IE M E N S Nonvolatile Memory 2-Kbit E2PROM with l 2C Bus and 2 K Write Protection SDA 3526-5 Preliminary Data M O S IC Features • • • • • • • • • • W ord-organized programm able nonvolatile memory in n-channel floating-gate technology E 2PROM


    OCR Scan     		PDF Q67100-H5099 5235b05 00b33Ã bc 331 siemens sda

    Untitled

    Abstract: No abstract text available
    Text: FEATURES D E S C R IP T IO N • True 125MHz retrigger rate Synergy's SY605 is an ECL-compatible tim ing vernier delay generator whose tim e delay is programm ed via an 8bit code which is loaded via an independent "WRITE" input. The SY605 is fabricated in Synergy's proprietary ASSET


    OCR Scan     		PDF 125MHz Bt605 350mW 28-pin SY605 125MHz, 4ns/255 RPE112Z5U104M50V CB301210

    28F256 CMOS FLASH

    Abstract: No abstract text available
    Text: SGS-THOMSON M28F256 1ILG 256K 32 x 8 CMOS FLASH MEMORY ADVANCE DATA • FLASH ELECTRICAL CHIP ERASE IN 1 SEC­ OND RANGE. ■ PRESTO F PROGRAMMING TYPICAL BYTE PROGRAM TIME : 100 jus. ■ 12 V VPP SUPPLY. ■ 100 TO 10.000 ERASE/PROGRAM CYCLES. ■ VERY FAST ACCESS TIME : 100 ns.


    OCR Scan     		PDF M28F256 SPEED/10 28F256 CMOS FLASH

    M28F101

    Abstract: PDIP32 PLCC32
    Text: SGS-THOMSON ^ 7 # M28F101 M g ^ ( 5 i[L i( g T M 5 M ( g S CMOS 1 Megabit (128K x 8) FLASH MEMORY ADVANCE DATA • FAST ACCESS TIM E: 100ns ■ LOW POWER CONSUMPTION - Standby Current: 100|iA Max ■ 10,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMM ING VOLTAGE


    OCR Scan     		PDF M28F101 100ns PDIP32 PLCC32 PTS032 M28F101 PDIP32 PLCC32

    M28F256A

    Abstract: M28F256 PDIP32 PLCC32
    Text: ¿ = 7 S C S -TH O M S O N “ 7 # M28F256 ^ D lE S Œ tIl(g ¥ ^ (s )iD © i CMOS 256K (32K x 8) FLASH MEMORY • FAST ACC ESS TIME: 100ns ■ 1,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMMING VOLTAGE ■ TYPICAL BYTE PROGRAMM ING TIME 100ns (PRESTO F PROGRAMMING)


    OCR Scan     		PDF M28F256 100ns M28F256 100ns PDIP32 PLCC32 M28F256A

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON ^ 7 # M28F101 M g ^ ( 5 i[L i( g T M 5 M ( g S CMOS 1 Megabit (128K x 8) FLASH MEMORY ADVANCE DATA • FAST ACCESS TIM E: 100ns ■ LOW POWER CONSUMPTION - Standby Current: 100|iA Max ■ 10,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMM ING VOLTAGE


    OCR Scan     		PDF M28F101 100ns M28F101 PDIP32 PLCC32

    Untitled

    Abstract: No abstract text available
    Text: FZ7 ^ 7 # S G S -T H O M S O N M É M S i( £ M M M28F256A O ( g § CMOS 256K (32K x 8 FLASH MEMORY • FAST ACC ESS TIME: 100ns ■ LOW POWER CONSUMPTION - Standby Current: 200|iA Max ■ 10,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMM ING VOLTAGE ■ TYPICAL BYTE PROGRAMING TIM E 10ns


    OCR Scan     		PDF M28F256A 100ns 28F256A PDIP32 PLCC32

    28F010T

    Abstract: 28F010
    Text: 28F010 1024K 128K X 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 [is Typical Byte-Program — 2 Second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0 V ±5% V pp


    OCR Scan     		PDF 28F010 1024K 32-Pin 32-Lead 28F010-90 28F010-120 28F010-150 8F010-90 28F010T

    Z8410APS

    Abstract: Z80-DMA Z8410A-PS Z80ADMA Z8410PS Z80A dma z80dma 5233j tda 2032 Z8410C
    Text: ZILOC INC ~72 DeT| TT040M3-.ÛOQSa-17 T-52-33-j Z 8410 Z80 DMA Direct Memory Access Controller iy i I AAr fe iU v /y Product Specification A p r il 1985 • Transfers, searches, and search/transfers in Byte-at-aTime, Burst, or Continuous modes. Cycle length and


    OCR Scan     		PDF TT040M3-. OQSa-17 T-52-33-j Z80DMA 40-pin Z8410PS Z8410C 40-pln Z8410APS 8410AC Z80-DMA Z8410A-PS Z80ADMA Z80A dma z80dma 5233j tda 2032

    Untitled

    Abstract: No abstract text available
    Text: 28F020 2048K 256K X 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 \iS Typical Byte-Program — 4 second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0 V ±5% V pp


    OCR Scan     		PDF 28F020 2048K 32-Lead E28F020-90 E28F020-120 E28F020-150 TE28F020-90 TE28F020-120 TE28F020-150

    Untitled

    Abstract: No abstract text available
    Text: Æ 7 SCS-THOMSON * 7 # K f ô m iO T ® ® M28F512 « CMOS 512K 64K x 8 FLASH MEMORY • FAST ACCESS TIME: 100ns ■ LOW POWER CONSUMPTION - Standby Current: 200|iA Max ■ 10,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMM ING VOLTAGE ■ TYPICAL BYTE PROGRAMM ING TIM E 10ns


    OCR Scan     		PDF M28F512 100ns M28F512 28F512 PDIP32 PLCC32

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON ¡y M28F1001 1024K 128 x 8 CMOS FLASH MEMORY A D V AN C E DATA • FLASH ELECTRICAL CHIP ERASE IN 1 SEC­ OND RANGE. ■ PRESTO F PROGRAMMING TYPICAL BYTE PROGRAM TIME : 100 us. ■ 12 V VPP SUPPLY. ■ 100 TO 10.000 ERASE/PROGRAM CYCLES. ■ VERY FAST ACCESS TIME : 100 ns.


    OCR Scan     		PDF M28F1001 1024K 28F1001 SPEED/10

    Untitled

    Abstract: No abstract text available
    Text: In te l 28F512 512K 64K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 /as Typical Byte-Program — 1 Second Chip-Program 100,000 Erase/Program Cycles 12.0V ± 5 % Vpp High-Performance Read


    OCR Scan     		PDF 28F512 ER-20, ER-24, RR-60, AP-316, AP-325 TP28F512-120, TN28F512-120 4fl5bl75 D154flbb

    Untitled

    Abstract: No abstract text available
    Text: / U T SGS-THOMSON *7 # M28F256 i]D g ® iL i© ir ® © [iO (g i CMOS 256K (32K x 8 FLASH MEMORY FAST ACCESS TIME: 100ns 1,000 ERASE/PROGRAM CYCLES 12V PROGRAMM ING VOLTAGE TYPICAL BYTE PROGRAMM ING TIM E 100us (PRESTO F PROGRAMMING) ELECTRICAL CHIP ERASE IN 1s RANGE


    OCR Scan     		PDF M28F256 100ns 100us 28F256 PDIP32 PLCC32

    Untitled

    Abstract: No abstract text available
    Text: r= 7 M 28F101B M 28V101B S G S -T H O M S O N CMOS 1 Megabit 128K x 8, Chip Erase FLASH MEMORY ADVANCE DATA • FAST ACCESS TIMES - 60ns fo r M 28F101B version - 150ns for M 28V101 B version ■ LOW POWER CONSUMPTION - Standby Current: 100jiA Max ■ 10,000 PROGRAM/ERASE CYCLES


    OCR Scan     		PDF 28F101B 28V101B 150ns 28V101 100jiA M28V101B 28F101B, M28F101B,

    TN28F010

    Abstract: No abstract text available
    Text: 28F010 1024K 128K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 1 Second Typical Chlp-Erase ■ Quick Pulse Programming Algorithm — 10 )j,s Typical Byte-Program — 2 Second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0V ± 5 % Vpp


    OCR Scan     		PDF 28F010 1024K 32-Pin 32-Lead 28F010-65 28F010-90 TN28F010

    Untitled

    Abstract: No abstract text available
    Text: CMOS SUPERSYNC FIFO 16,384 x 9, 32,768 X 9 IDT72261 IDT72271 Integrated Device Technology, Inc. FEATURES: • • • • • • • • • • • • • • • 16,384 x 9-bit storage capacity IDT72261 32,768 x 9-bit storage capacity (IDT72271) 10ns read/write cycle tim e (8ns access time)


    OCR Scan     		PDF IDT72261 IDT72271 IDT72261) IDT72271) MIL-STD-883, 4A25771

    tda 1006

    Abstract: T1006T tda vertical IC tv crt z8410 z84c10 ASZ80
    Text: P r o d u c t S p e c if ic a t io n Z8410/Z84C10 NMOS/CMOS Z80 DMA Direct Memory Access Controller FEATURES • Transfers, searches, and search/transfers in Byte-at-aTime, Burst, or Continuous modes. Cycle length and edge timing can be programm ed to match the speed of


    OCR Scan     		PDF Z8410/Z84C10 tda 1006 T1006T tda vertical IC tv crt z8410 z84c10 ASZ80

    28FS12

    Abstract: 51212
    Text: in t e i 28F512 512K 64K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase Quick-Puise Programming Algorithm — 10 ju.s Typical Byte-Program — 1 Second Chlp-Program 100,000 Erase/Program Cycles 12.0V ±5% VPP High-Performance Read


    OCR Scan     		PDF 28F512 32-Lead N28F512-120 N28F512-150 TP28F512-120 TN28F512-120 ER-20, ER-24, RR-60, AP-316, 28FS12 51212

    Untitled

    Abstract: No abstract text available
    Text: PR ELIM INA R Y IN FO R M A TIO N 64K Military X2864HM 8 19 2x 8 Bit Electrically Erasable PROM TYPICAL FEATURES • 90 ns Access Time • High Performance Scaled NMOS Technology • Fast Write Cycle Times —32-Byte Page Write Operation —Byte or Page Write Cycle: 3 ms Typical


    OCR Scan     		PDF X2864HM --32-Byte X2864H

    Untitled

    Abstract: No abstract text available
    Text: i&Br FACT SHEET 1M Commercial X28C010 128Kx8B it Electrically Erasable PROM FEATURES • 200 ns Access Time • LOW Power CMOS —80 mA Active Current Typical — 500 juA Standby Current Typical • Fast Write Cycle Times — 128-Byte Page Write Operation


    OCR Scan     		PDF X28C010 128Kx8B 128-byte

    Untitled

    Abstract: No abstract text available
    Text: Advanced Micro Devices Am4601 Programmable-Flags, 512 x 9 FIFO DISTINCTIVE CHARACTERISTICS • 512x9 RAM-based FIFO ■ 25 and 35 ns access times ■ ■ Two fixed flags; full and empty Two programmable flags; programmable from 1 to 511 ■ ■ Programmable polarity for all four flags


    OCR Scan     		PDF Am4601 512x9 Am4601 11684D-11 11684D-14

    Untitled

    Abstract: No abstract text available
    Text: Advanced Micro Devices Am4601 Programmable-Flags, 512 x 9 FIFO DISTINCTIVE CHARACTERISTICS • 512 x 9 RAM-based FIFO ■ 25 and 35 ns access times ■ Two fixed flags; full and empty ■ Two programmable flags; programmable from 1 to 511 ■ ■ Programmable polarity for all four flags


    OCR Scan     		PDF Am4601 Am4601 11684D-11 11684D-14 Am460l

    Untitled

    Abstract: No abstract text available
    Text: CMOS SUPERSYNC FIFO 16,384x9, 32,768x9 IDT72261 IDT72271 Integrated Device Technology, Inc. FEATURES: • • • • • • • • • • • • • • • 16,384 x 9-bit storage capacity IDT72261 32,768 x 9-bit storage capacity (IDT72271) 10ns read/write cycle tim e (8ns access time)


    OCR Scan     		PDF 384x9, 768x9 IDT72261 IDT72271 IDT72261) IDT72271) IDT72255/72265 DSC-3037/5