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    WRITE PROGRAMM CYCLE Search Results

    WRITE PROGRAMM CYCLE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    PAL16R8-4JC-UNPROGRAMMED Rochester Electronics LLC PAL16R8-4JC-UNPROGRAMMED Visit Rochester Electronics LLC Buy
    54C89J/B Rochester Electronics LLC 54C89 - 64-Bit TRI-STATE(RM) Random Access Read/Write Memory Visit Rochester Electronics LLC Buy
    MM54C89J Rochester Electronics LLC 54C89 - 64-Bit TRI-STATE(RM) Random Access Read/Write Memory Visit Rochester Electronics LLC Buy
    AM27S25DM Rochester Electronics LLC AM27S25 - OTP ROM Visit Rochester Electronics LLC Buy
    AM27C010-55PI-G Rochester Electronics LLC AM27C010 - EPROM - OTP, EPROM - UV 1Mbit 128k x 8 Visit Rochester Electronics LLC Buy

    WRITE PROGRAMM CYCLE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    bc 331

    Abstract: siemens sda
    Text: S IE M E N S Nonvolatile Memory 2-Kbit E2PROM with l 2C Bus and 2 K Write Protection SDA 3526-5 Preliminary Data M O S IC Features • • • • • • • • • • W ord-organized programm able nonvolatile memory in n-channel floating-gate technology E 2PROM


    OCR Scan     		Q67100-H5099 5235b05 00b33Ã bc 331 siemens sda PDF

    Untitled

    Abstract: No abstract text available
    Text: FEATURES D E S C R IP T IO N • True 125MHz retrigger rate Synergy's SY605 is an ECL-compatible tim ing vernier delay generator whose tim e delay is programm ed via an 8bit code which is loaded via an independent "WRITE" input. The SY605 is fabricated in Synergy's proprietary ASSET


    OCR Scan     		125MHz Bt605 350mW 28-pin SY605 125MHz, 4ns/255 RPE112Z5U104M50V CB301210 PDF

    28F256 CMOS FLASH

    Abstract: No abstract text available
    Text: SGS-THOMSON M28F256 1ILG 256K 32 x 8 CMOS FLASH MEMORY ADVANCE DATA • FLASH ELECTRICAL CHIP ERASE IN 1 SEC­ OND RANGE. ■ PRESTO F PROGRAMMING TYPICAL BYTE PROGRAM TIME : 100 jus. ■ 12 V VPP SUPPLY. ■ 100 TO 10.000 ERASE/PROGRAM CYCLES. ■ VERY FAST ACCESS TIME : 100 ns.


    OCR Scan     		M28F256 SPEED/10 28F256 CMOS FLASH PDF

    M28F101

    Abstract: PDIP32 PLCC32
    Text: SGS-THOMSON ^ 7 # M28F101 M g ^ ( 5 i[L i( g T M 5 M ( g S CMOS 1 Megabit (128K x 8) FLASH MEMORY ADVANCE DATA • FAST ACCESS TIM E: 100ns ■ LOW POWER CONSUMPTION - Standby Current: 100|iA Max ■ 10,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMM ING VOLTAGE


    OCR Scan     		M28F101 100ns PDIP32 PLCC32 PTS032 M28F101 PDIP32 PLCC32 PDF

    M28F256A

    Abstract: M28F256 PDIP32 PLCC32
    Text: ¿ = 7 S C S -TH O M S O N “ 7 # M28F256 ^ D lE S Œ tIl(g ¥ ^ (s )iD © i CMOS 256K (32K x 8) FLASH MEMORY • FAST ACC ESS TIME: 100ns ■ 1,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMMING VOLTAGE ■ TYPICAL BYTE PROGRAMM ING TIME 100ns (PRESTO F PROGRAMMING)


    OCR Scan     		M28F256 100ns M28F256 100ns PDIP32 PLCC32 M28F256A PDF

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON ^ 7 # M28F101 M g ^ ( 5 i[L i( g T M 5 M ( g S CMOS 1 Megabit (128K x 8) FLASH MEMORY ADVANCE DATA • FAST ACCESS TIM E: 100ns ■ LOW POWER CONSUMPTION - Standby Current: 100|iA Max ■ 10,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMM ING VOLTAGE


    OCR Scan     		M28F101 100ns M28F101 PDIP32 PLCC32 PDF

    Untitled

    Abstract: No abstract text available
    Text: FZ7 ^ 7 # S G S -T H O M S O N M É M S i( £ M M M28F256A O ( g § CMOS 256K (32K x 8 FLASH MEMORY • FAST ACC ESS TIME: 100ns ■ LOW POWER CONSUMPTION - Standby Current: 200|iA Max ■ 10,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMM ING VOLTAGE ■ TYPICAL BYTE PROGRAMING TIM E 10ns


    OCR Scan     		M28F256A 100ns 28F256A PDIP32 PLCC32 PDF

    28F010T

    Abstract: 28F010
    Text: 28F010 1024K 128K X 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 [is Typical Byte-Program — 2 Second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0 V ±5% V pp


    OCR Scan     		28F010 1024K 32-Pin 32-Lead 28F010-90 28F010-120 28F010-150 8F010-90 28F010T PDF

    Z8410APS

    Abstract: Z80-DMA Z8410A-PS Z80ADMA Z8410PS Z80A dma z80dma 5233j tda 2032 Z8410C
    Text: ZILOC INC ~72 DeT| TT040M3-.ÛOQSa-17 T-52-33-j Z 8410 Z80 DMA Direct Memory Access Controller iy i I AAr fe iU v /y Product Specification A p r il 1985 • Transfers, searches, and search/transfers in Byte-at-aTime, Burst, or Continuous modes. Cycle length and


    OCR Scan     		TT040M3-. OQSa-17 T-52-33-j Z80DMA 40-pin Z8410PS Z8410C 40-pln Z8410APS 8410AC Z80-DMA Z8410A-PS Z80ADMA Z80A dma z80dma 5233j tda 2032 PDF

    Untitled

    Abstract: No abstract text available
    Text: 28F020 2048K 256K X 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 \iS Typical Byte-Program — 4 second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0 V ±5% V pp


    OCR Scan     		28F020 2048K 32-Lead E28F020-90 E28F020-120 E28F020-150 TE28F020-90 TE28F020-120 TE28F020-150 PDF

    Untitled

    Abstract: No abstract text available
    Text: Æ 7 SCS-THOMSON * 7 # K f ô m iO T ® ® M28F512 « CMOS 512K 64K x 8 FLASH MEMORY • FAST ACCESS TIME: 100ns ■ LOW POWER CONSUMPTION - Standby Current: 200|iA Max ■ 10,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMM ING VOLTAGE ■ TYPICAL BYTE PROGRAMM ING TIM E 10ns


    OCR Scan     		M28F512 100ns M28F512 28F512 PDIP32 PLCC32 PDF

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON ¡y M28F1001 1024K 128 x 8 CMOS FLASH MEMORY A D V AN C E DATA • FLASH ELECTRICAL CHIP ERASE IN 1 SEC­ OND RANGE. ■ PRESTO F PROGRAMMING TYPICAL BYTE PROGRAM TIME : 100 us. ■ 12 V VPP SUPPLY. ■ 100 TO 10.000 ERASE/PROGRAM CYCLES. ■ VERY FAST ACCESS TIME : 100 ns.


    OCR Scan     		M28F1001 1024K 28F1001 SPEED/10 PDF

    Untitled

    Abstract: No abstract text available
    Text: In te l 28F512 512K 64K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 /as Typical Byte-Program — 1 Second Chip-Program 100,000 Erase/Program Cycles 12.0V ± 5 % Vpp High-Performance Read


    OCR Scan     		28F512 ER-20, ER-24, RR-60, AP-316, AP-325 TP28F512-120, TN28F512-120 4fl5bl75 D154flbb PDF

    Untitled

    Abstract: No abstract text available
    Text: / U T SGS-THOMSON *7 # M28F256 i]D g ® iL i© ir ® © [iO (g i CMOS 256K (32K x 8 FLASH MEMORY FAST ACCESS TIME: 100ns 1,000 ERASE/PROGRAM CYCLES 12V PROGRAMM ING VOLTAGE TYPICAL BYTE PROGRAMM ING TIM E 100us (PRESTO F PROGRAMMING) ELECTRICAL CHIP ERASE IN 1s RANGE


    OCR Scan     		M28F256 100ns 100us 28F256 PDIP32 PLCC32 PDF

    Untitled

    Abstract: No abstract text available
    Text: r= 7 M 28F101B M 28V101B S G S -T H O M S O N CMOS 1 Megabit 128K x 8, Chip Erase FLASH MEMORY ADVANCE DATA • FAST ACCESS TIMES - 60ns fo r M 28F101B version - 150ns for M 28V101 B version ■ LOW POWER CONSUMPTION - Standby Current: 100jiA Max ■ 10,000 PROGRAM/ERASE CYCLES


    OCR Scan     		28F101B 28V101B 150ns 28V101 100jiA M28V101B 28F101B, M28F101B, PDF

    TN28F010

    Abstract: No abstract text available
    Text: 28F010 1024K 128K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 1 Second Typical Chlp-Erase ■ Quick Pulse Programming Algorithm — 10 )j,s Typical Byte-Program — 2 Second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0V ± 5 % Vpp


    OCR Scan     		28F010 1024K 32-Pin 32-Lead 28F010-65 28F010-90 TN28F010 PDF

    Untitled

    Abstract: No abstract text available
    Text: CMOS SUPERSYNC FIFO 16,384 x 9, 32,768 X 9 IDT72261 IDT72271 Integrated Device Technology, Inc. FEATURES: • • • • • • • • • • • • • • • 16,384 x 9-bit storage capacity IDT72261 32,768 x 9-bit storage capacity (IDT72271) 10ns read/write cycle tim e (8ns access time)


    OCR Scan     		IDT72261 IDT72271 IDT72261) IDT72271) MIL-STD-883, 4A25771 PDF

    tda 1006

    Abstract: T1006T tda vertical IC tv crt z8410 z84c10 ASZ80
    Text: P r o d u c t S p e c if ic a t io n Z8410/Z84C10 NMOS/CMOS Z80 DMA Direct Memory Access Controller FEATURES • Transfers, searches, and search/transfers in Byte-at-aTime, Burst, or Continuous modes. Cycle length and edge timing can be programm ed to match the speed of


    OCR Scan     		Z8410/Z84C10 tda 1006 T1006T tda vertical IC tv crt z8410 z84c10 ASZ80 PDF

    28FS12

    Abstract: 51212
    Text: in t e i 28F512 512K 64K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase Quick-Puise Programming Algorithm — 10 ju.s Typical Byte-Program — 1 Second Chlp-Program 100,000 Erase/Program Cycles 12.0V ±5% VPP High-Performance Read


    OCR Scan     		28F512 32-Lead N28F512-120 N28F512-150 TP28F512-120 TN28F512-120 ER-20, ER-24, RR-60, AP-316, 28FS12 51212 PDF

    Untitled

    Abstract: No abstract text available
    Text: PR ELIM INA R Y IN FO R M A TIO N 64K Military X2864HM 8 19 2x 8 Bit Electrically Erasable PROM TYPICAL FEATURES • 90 ns Access Time • High Performance Scaled NMOS Technology • Fast Write Cycle Times —32-Byte Page Write Operation —Byte or Page Write Cycle: 3 ms Typical


    OCR Scan     		X2864HM --32-Byte X2864H PDF

    Untitled

    Abstract: No abstract text available
    Text: i&Br FACT SHEET 1M Commercial X28C010 128Kx8B it Electrically Erasable PROM FEATURES • 200 ns Access Time • LOW Power CMOS —80 mA Active Current Typical — 500 juA Standby Current Typical • Fast Write Cycle Times — 128-Byte Page Write Operation


    OCR Scan     		X28C010 128Kx8B 128-byte PDF

    Untitled

    Abstract: No abstract text available
    Text: Advanced Micro Devices Am4601 Programmable-Flags, 512 x 9 FIFO DISTINCTIVE CHARACTERISTICS • 512x9 RAM-based FIFO ■ 25 and 35 ns access times ■ ■ Two fixed flags; full and empty Two programmable flags; programmable from 1 to 511 ■ ■ Programmable polarity for all four flags


    OCR Scan     		Am4601 512x9 Am4601 11684D-11 11684D-14 PDF

    Untitled

    Abstract: No abstract text available
    Text: Advanced Micro Devices Am4601 Programmable-Flags, 512 x 9 FIFO DISTINCTIVE CHARACTERISTICS • 512 x 9 RAM-based FIFO ■ 25 and 35 ns access times ■ Two fixed flags; full and empty ■ Two programmable flags; programmable from 1 to 511 ■ ■ Programmable polarity for all four flags


    OCR Scan     		Am4601 Am4601 11684D-11 11684D-14 Am460l PDF

    Untitled

    Abstract: No abstract text available
    Text: CMOS SUPERSYNC FIFO 16,384x9, 32,768x9 IDT72261 IDT72271 Integrated Device Technology, Inc. FEATURES: • • • • • • • • • • • • • • • 16,384 x 9-bit storage capacity IDT72261 32,768 x 9-bit storage capacity (IDT72271) 10ns read/write cycle tim e (8ns access time)


    OCR Scan     		384x9, 768x9 IDT72261 IDT72271 IDT72261) IDT72271) IDT72255/72265 DSC-3037/5 PDF