T045
Abstract: NSP6191
Text: NSP6191 PRELIMINARY MEDIUM-POWER PNP SILICON TRANSISTORS .designed for switching and wide band amplifier applications. • • • LOW C O L L EC T O R -E M IT TE R SATURATION VOLTAGE DC CURRENT GAIN SPEC IFIED T O S AM PERES EX CELLEN T SAFE O PERA TIN G AREA
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NSP6191
O-257AA
NSP6191
40Vdc,
300ns,
T045
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IRF230
Abstract: SFF230 MOSFET IRF230
Text: §S i — PRELIMINARV SFF230,J SOLID STATE DEVICES, INC r j 14849 Firestone Boulevard • La Mirada,CA 90638 Phone: 714 670-SSDI (7734) • Fax: (714) 522-7424 9 AMP 200 VOLT!5 0.40& N-CHANNE:L POWER MOS FET Designer’s Data Sheet FEATURES: • • •
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670-SSDI
SFF230,
IRF230
O-257
SFF230
MOSFET IRF230
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K120
Abstract: NESY130 OC44 OC-44 sm43a
Text: T im es ? NESY130 POWER MOSFET N CHANNEL • R E P E T IT IV E A V A L A N C H E R A T IN G S • L O W R DS(0 n • L O W D R IV E R E Q U IR E M E N T • D Y N A M IC d v / d t R A T IN G ABSOLUTE MAXIMUM RATINGS (Tc = 25 C unless otherwise noted) SYMBOL
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NESY130
O-257
oc-446-1158
K120
NESY130
OC44
OC-44
sm43a
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CIB1000
Abstract: stps205100ct NSP5428 NSP5430
Text: NSP5428 NSP5430 PRELIMINARY MEDIUM-POWER NPN SILICON TRANSISTORS .designed for switching and wide band amplifier applications. • • • LOW COLLECTOR-EM ITTER SATURATION VOLTAGE DC CURRENT GAIN SPECIFIED TO 7 AMPERES EXCELLENT SAFE OPERATING AREA M AXIM UM RATINGS*
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NSP5428
NSP5430
O-257AA
NSP5430
40Vdc,
300ns,
510ns
CIB1000
stps205100ct
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br 003 m 527
Abstract: IRFY240 K120
Text: IRFY240 POWER MOSFET N CHANNEL • REPETITIVE AVALANCHE RATINGS • LOW R DS 0 n • LOW DRIVE REQUIREM ENT • DYNAMIC d v / d t RATING ABSOLUTE MAXIMUM RATINGS (Tc = 25 C unless otherwise noted) SYMBOL VALUE UNITS D rain-Source V oltage V ds 200 V G ate-Source V oltage
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IRFY240
O-257
00A/pS,
br 003 m 527
IRFY240
K120
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P Channel Low Gate Charge 100A
Abstract: No abstract text available
Text: Back to FETs 0/VEF ^ IP NESY240 NEW ENGLAND SEMICONDUCTOR POWER MOSFET N CHANNEL • REPETITIVE AVALANCHE RATINGS • LOW R DS 0n • LOW DRIVE REQUIREM ENT • DYNAMIC d v / d t RATING A BSO LU T E M A X IM U M R A T IN G S (T c = 25°C unless otherw ise noted)
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NESY240
P Channel Low Gate Charge 100A
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Untitled
Abstract: No abstract text available
Text: Back to FETs 0 /V EF ^ IP NESY230 NEW ENGLAND SEMICONDUCTOR POWER MOSFET N CHANNEL • REPETITIVE AVALANCHE RATINGS • LOW RDS on • LOW DRIVE REQUIREMENT • DYNAM IC d v / d t RATING ABSOLUTE MAXIMUM RATINGS (Tc = 25°C unless otherwise noted) D ra in -S o u rc e V o lta g e
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NESY230
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY MEDIUM-POWER NPN SILICON TRANSISTORS .designed for switching and wide band amplifier applications. • • • LOW COLLECTOR-EMITTER SATURATION VOLTAGE DC CURRENT GAIN SPECIFIED TO 7 AMPERES EXCELLENT SAFE OPERATING AREA MAXIMUM RATINGS* RATINGS
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PDF
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NSP5428
NSP5430
SP5428,
SP5430
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Untitled
Abstract: No abstract text available
Text: Back to FETs IRFY240 POWER MOSFET N CHANNEL • REPETITIVE AVALANCHE RATINGS • LOW R DS 0 n • LOW DRIVE REQUIREM ENT • DYNAMIC d v / d t RATING A BSO LU T E M A X IM U M R A T IN G S (T c = 25 C unless otherw ise noted) P A R A M E T E R S / T E ST C O N D IT IO N S
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IRFY240
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Untitled
Abstract: No abstract text available
Text: Back to FETs iZiA Q T NSG2649 POWER MOSFET N CHANNEL • REPETITIVE AVALANCHE RATINGS • LOW R DS 0 n • LOW DRIVE REQUIREM ENT • DYNAMIC d v / d t RATING A BSO LU T E M A X IM U M R A T IN G S (T c = 25 C unless otherw ise noted) P A R A M E T E R S / T E ST C O N D IT IO N S
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NSG2649
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IRFY044
Abstract: SFF044J
Text: ^§11 PRELIMINARY SFF044J /ii SOLID STATE DEVICES, INC :// u_ 14849 Firestone Boulevard • La Mirada,CA 90638 Phone: 714 670-SSDI (7734) Fax: (714) 522-7424 35 AMP 60 VOLT 0.035 Q N-CHANNEL POWER MOSFET Designer’s Data Sheet FEATURES: ■ ■ ■ ■
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670-SSDI
SFF044J
IRFY044
O-257
SFF044J
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Untitled
Abstract: No abstract text available
Text: Back to FETs 0 /V E F ^ IP NESY034 NEW ENGLAND SEMICONDUCTOR POWER MOSFET N CHANNEL • REPETITIVE AVALANCHE RATINGS • LOW R DS 0 n • LOW DRIVE REQUIREMENT • DYNAMIC d v /d t RATING ABSOLUTE MAXIMUM RATINGS (Tc = 25°C unless otherwise noted) SYMBOL
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NESY034
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NESY230
Abstract: SM24A
Text: 0 /V EF ^ IP NESY230 NEW ENGLAND SEMICONDUCTOR POWER MOSFET N CHANNEL • R EPETITIVE AV A LA N CH E RATIN GS • LOW RDS on • LOW D RIVE REQUIREM ENT • D YNAM IC d v/d t RATING ABSOLUTE MAXIMUM RATINGS (Tc = 25°C unless otherwise noted) PARAMETERS / TEST CONDITIONS
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NESY230
O-257AA
XM46-1158
NESY230
SM24A
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K120
Abstract: NESY034
Text: 0 /V E F ^ IP NESY034 NEW ENGLAND SEMICONDUCTOR POWER MOSFET N CHANNEL • REPETITIVE AVALANCHE RATINGS • LOW R DS 0 n • LOW DRIVE REQUIREMENT • DYNAMIC d v /d t RATING A B SO LU TE M A X IM U M R A TIN G S (Tc = 25°C unless otherw ise noted) SY M B O L
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NESY034
O-257
K120
NESY034
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NSP5153
Abstract: No abstract text available
Text: NSP5153 PRELIMINARY MEDIUM-POWER PNP SILICON TRANSISTORS .designed for switching and wide band amplifier applications. • LOW C O L L EC T O R -E M ITT ER SATURATION VOLTAGE 5 AM PERES • DC CURRENT GAIN SPECIFIED T O • EXCELLENT SAKE OPERATING AREA
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NSP5153
O-257AA
NSP5I53
300ns,
NSP5153
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IRF440
Abstract: K120 SFF440J
Text: « S ir a | SFF440J SOLID STATE DEVICES, INC CA 14849 Firestone Boulevard - La Mirada, 90638 Phone: 714 670-SSDI (7734) Fax: (714) 522-7424 8 AMP 500 VOLTS 0.86Q N-CHANNEL POWER MOSFET | D e s ig n e r’s Data S h eet FEATURES: • Rugged construction with poly silicon gate
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SFF440J
670-SSDI
IRF440
O-257
F00087
K120
SFF440J
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K120
Abstract: NSG2649 oc44
Text: T im es ? NSG2649 POWER MOSFET N CHANNEL • REPETITIVE AVALANCHE RATINGS • LOW R DS(0 n • LOW DRIVE REQUIREM ENT • DYNAMIC d v / d t RATING A BSO LU T E M A X IM U M R A T IN G S (T c = 25 C unless otherw ise noted) SY M BO L V A LU E U N IT S D rain-Source V oltage
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NSG2649
O-257
oc-446-1158
K120
NSG2649
oc44
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Untitled
Abstract: No abstract text available
Text: Back to FETs NESY130 POWER MOSFET N CHANNEL • REPETITIVE AVALANCHE RATINGS • LOW R DS 0 n • LOW DRIVE REQUIREM ENT • DYNAMIC d v / d t RATING ABSOLUTE MAXIMUM RATINGS (Tc = 25 C unless otherwise noted) SYMBOL PARAMETERS / TEST CONDITIONS Drain-Source Voltage
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NESY130
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127C
Abstract: SSR2040J
Text: PRELIMINARY SSR2040J SOLID STATE DEVICES, INC 14849 Firestone Boulevard - La Mirada,CA 90638 Phone: 714 670-SSDI (7734) Fax: (714) 522-7424 Designer’s Data Sheet FEATURES: Extremely Low Forward Voltage Drop Hermetically Sealed Power Package Guard ring for overvoltage protection
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670-SSDI
SSR2040J
O-257
x100BSC
120BSC
127C
SSR2040J
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irf420
Abstract: K120 SFF420J
Text: § 5 1 5 1 ro n ffS T A T E DEVICES, INC c c c jo n i V CA 14849 Firestone Boulevard • La Mirada, 90638 Phone: 714 670-SSDI (7734) • Fax: (714) 522-7424 Designer’s Data Sheet 2.5 AMP ~ 500 VOLTS 3.0Í2 N-CHANNEL POWER MOSFET | FEATURES: • • •
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670-SSDI
SFF420J
IRF420
O-257
F00313
K120
SFF420J
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IRLIZ44G
Abstract: No abstract text available
Text: PRELIMINARY SFL044J DEVICES, INC in _ X _ 30 AMP 60 VOLT 0.030 Q N-CHANNEL LOGIC LEVEL POWER MOSFET 14849 Firestone Boulevard • La Mirada,CA 90638 Phone: 714 670-SSDI (7734) • Fax: (714) 522-7424 Designer’s Data Sheet FEATURES:
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670-SSDI
IRLIZ44G
O-257
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