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    X1013 Search Results

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    SIT9375AI-02A2-XX10-133.333333 SiTime SIT9375AI-02A2-XX10-133.333333 Datasheet
    SIT9375AI-02B2-XX10-133.333333 SiTime SIT9375AI-02B2-XX10-133.333333 Datasheet
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    X1013 Price and Stock

    CTS Corporation 746X101331JP

    RES ARRAY 8 RES 330 OHM 1206
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    DigiKey 746X101331JP Cut Tape 8,047 1
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    Bourns Inc 4606X-101-391LF

    RES ARRAY 5 RES 390 OHM 6SIP
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    DigiKey 4606X-101-391LF Bulk 4,442 1
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    Bourns Inc 4610X-101-334LF

    RES ARRAY 9 RES 330K OHM 10SIP
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    DigiKey 4610X-101-334LF Bulk 2,857 1
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    Chip1Stop 4610X-101-334LF 745
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    Bourns Inc 4608X-101-332LF

    RES ARRAY 7 RES 3.3K OHM 8SIP
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    DigiKey 4608X-101-332LF Bulk 2,390 1
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    Newark 4608X-101-332LF Bulk 2,135 1
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    Bourns Inc 4604X-101-331LF

    RES ARRAY 3 RES 330 OHM 4SIP
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    DigiKey 4604X-101-331LF Bulk 2,000 1
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    X1013 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ms8351

    Abstract: No abstract text available
    Text: GaAs Schottky Diodes TM Low CT Series Pair MS8351 P2819 Flip Chip GaAs Schottky: Series Pair – Low Capacitance Design Dimensions Size: 28 x 19 mils Thickness: 5 mils Bond Pad Size: 5 x 5 mils Features ● Capacitance 45 fF Typ. ● Low Series Resistance (7  Typ.)


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    PDF MS8351 P2819 MS8351 p0105 x10-13

    MS8251

    Abstract: P2613 schottky diodes Anti parallel P261
    Text: GaAs Schottky Diodes TM Flip Chip Anti Parallel Low CT MS8251 P2920 Dimensions Size: 26 x 13 mils Thickness: 5 mils Bond Pad Size: 5 x 8 mils Features ● Capacitance 45 fF Typ. ● Low Series Resistance (7  Typ.) ● Cut-Off Frequency > 500 GHz


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    PDF MS8251 P2920 MS8251-P2920 x10-13 MS8251 P2613 schottky diodes Anti parallel P261

    Untitled

    Abstract: No abstract text available
    Text: GaAs Schottky Diodes TM Low RS Series Pair MS8350 P2819 Dimensions Size: 28 x 19 mils Thickness: 5 mils Bond Pad Size: 5 x 5 mils Features ● Capacitance 65 fF Typ. ● Low Series Resistance (3  Typ.) ● Cut-Off Frequency > 500 GHz ● Large Gold Bond Pads


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    PDF MS8350 P2819 x10-13

    MS8150

    Abstract: MS8150-P2613 P2613
    Text: GaAs Schottky Devices Low RS Flip Chip TM MS8150 - P2613 Dimensions Size: 26 x 13 mils Thickness: 5 mils Bond Pad Size: 5 x 8 mils Features ● Capacitance 65 fF Typ. ● Low Series Resistance (3  Typ.) ● Cut-off Frequency > 500 GHz ● Large Gold Bond Pads


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    PDF MS8150 P2613 MS8150-P2613 x10-13 P2613

    Untitled

    Abstract: No abstract text available
    Text: MISCELLANEOUS SOCKETS Relay & Zig-Zag Sockets 0,64 0,46 0,38 0,25 2,41 2,79 3,71 4,19 0,51 3,18 ● Relay sockets accept devices with I/O pins on 2,54 grid. ● Zig-Zag strip sockets are suitable for IC’s and memory chips with staggered double row patterns.


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    PDF 110-XX-308-10-001000 110-XX-314-10-001000 110-XX-314-10-002000 110-XX-316-10-003000 410-XX-224-10-001000 410-XX-224-10-002000 410-XX-228-10-001000 410-XX-228-10-002000 X10-XX-XXX-10-00X000 X10-13-XXX-10-00X100

    connector life testing

    Abstract: 1565199-1 8Tel044 1565204-1 TC-ZIF TR1012 HDR connector connector with pcb mounts
    Text: 認定試験報告書 Qualification Test Report TC-ZIF CONNECTOR 501―5720 11-Jan-‘06 Rev.A 1 はじめに 1.1 目 的 本試験はTC-ZIF CONNECTOR 260極の、製品規格 108-5771 Rev.A に規定された性能必要条件に合致している


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    PDF 11-Jan- TR-101263 10-Sep-2001 22-Nov-200, 15-Jun-2005emperature 50Max connector life testing 1565199-1 8Tel044 1565204-1 TC-ZIF TR1012 HDR connector connector with pcb mounts

    sd172

    Abstract: sd172 photodiode
    Text: SD 172-11-31-221 Red Enhanced Ultra Low Capacitance Silicon Photodiode PACKAGE DIMENSIONS INCH [mm] PACKAGE DIMENSIONS INCH [mm] .169 [4.29] .157 [3.99] 45° .090 [2.29] 3X Ø.018 [0.46] 1 Ø.264 [6.70] Ø.256 [6.50] Ø.330 [8.38] Ø.320 [8.13] Ø.200 [5.08]


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    PDF sd172-11-31-221 sd172 sd172 photodiode

    Untitled

    Abstract: No abstract text available
    Text: GaAs Schottky Diodes TM Low RS Series Pair MS8350 P2819 Dimensions Size: 28 x 19 mils Thickness: 5 mils Bond Pad Size: 5 x 5 mils Features ● Capacitance 65 fF Typ. ● Low Series Resistance (3  Typ.) ● Cut-Off Frequency > 500 GHz ● Large Gold Bond Pads


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    PDF MS8350 P2819 MS8350 x10-13

    UV 111A

    Abstract: heidenhain power supply manual HEIDENHAIN HEIDENHAIN EnDat 2.1 rod+323+heidenhain
    Text: Inverter Systems for HEIDENHAIN Controls Information for the Machine Tool Builder January 2015 HEIDENHAIN inverter systems The inverter systems from HEIDENHAIN are suitable for the HEIDENHAIN controls with digital speed control. They are designed for operating the synchronous and asynchronous


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    PDF 040-A, UV 111A heidenhain power supply manual HEIDENHAIN HEIDENHAIN EnDat 2.1 rod+323+heidenhain

    DIODE 22B4

    Abstract: BA4602 ba41-00316a AR5212 MAP17-232 Q506 nvidia 7100 AR5211 27b1 diode geforce4
    Text: X10 DRAW Model Name PBA Name PCB Code Dev. Step Revision APPROVAL AQUILA MAIN BA92-01774A BA41-#####A SR 1.0 CHECK : : : : : CPU :P4-BANIAS Chip Set :MCH-M ODEM Remarks :TEMP AQUILA 7 Schematic Diagrams and PCB Silkscreen 7-1 MAIN BOARD 7-1-1 Schematic Diagrams


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    PDF BA92-01774A BA41-# 400MHZ 512MBYTE 66MHZ MAP31 68ohm 3000mA 012ohm DIODE 22B4 BA4602 ba41-00316a AR5212 MAP17-232 Q506 nvidia 7100 AR5211 27b1 diode geforce4

    Untitled

    Abstract: No abstract text available
    Text: GaAs Schottky Diodes TM Low CT Series Pair MS8351 P2819 Flip Chip GaAs Schottky: Series Pair – Low Capacitance Design Dimensions Size: 28 x 19 mils Thickness: 5 mils Bond Pad Size: 5 x 5 mils Features ● Capacitance 45 fF Typ. ● Low Series Resistance (7  Typ.)


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    PDF MS8351 P2819 MS8351 x10-13

    Advanced Photonix Inc

    Abstract: photodiode 110.5
    Text: Red Enhanced Ultra Low Capacitance Silicon Photodiode SD 290-11-31-241 PACKAGE DIMENSIONS INCH [mm] PACKAGE DIMENSIONS INCH [mm] .208 [5.28] .193 [4.90] .100 [2.54] Ø.555 [14.10] Ø.545 [13.84] Ø.300 [7.62] PIN CIRCLE Ø.435 [11.05] Ø.425 [10.80] Ø.490 [12.45]


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    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


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    PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    Untitled

    Abstract: No abstract text available
    Text: MLX90247 family Discrete Infrared Thermopile Detectors Features and Benefits Solid state thermopile sensor On-chip thermistor for ambient temperature compensation High reliability and long-term stability Low cost, small size Ordering Information Suffix Ta


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    PDF MLX90247 MLX90247 ISO14001 Oct/07

    2x4 RJ45 LED

    Abstract: 810130 marking P12 transistor p11 marking J1
    Text: INTEGRATED MODULAR JACK 10/100/1000 Gigabit Ethernet RJ45 2xN Port Options: 2x1, 2x4, 2x6, 2x8 Port Meets or exceeds IEEE 802.3 standard for 10/100/1000 Base-TX Suitable for CAT 5 & 6 Fast Ethernet Cable or better UTP Available with or without LEDs 350 uH minimum OCL with 8mA DC bias current


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    PDF 1500Vrms IEEE802 M288027, M287944, file94219539 file11/274 file11/284 file11/304 TD1/2/3/97 2x4 RJ45 LED 810130 marking P12 transistor p11 marking J1

    Untitled

    Abstract: No abstract text available
    Text: GaAs Schottky Diodes TM Low CT Series Pair MS8351 P2819 Flip Chip GaAs Schottky: Series Pair – Low Capacitance Design Dimensions Size: 28 x 19 mils Thickness: 5 mils Bond Pad Size: 5 x 5 mils Features Capacitance 45 fF Typ. Low Series Resistance (7  Typ.)


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    PDF MS8351 P2819 MS8351 x10-13

    Untitled

    Abstract: No abstract text available
    Text: Red Enhanced Ultra Low Capacitance Silicon Photodiode SD 172-11-31-221 PACKAGE DIMENSIONS INCH [mm] PACKAGE DIMENSIONS INCH [mm] .169 [4.29] .157 [3.99] 45° .090 [2.29] 3X Ø.018 [0.46] 1 Ø.264 [6.70] Ø.256 [6.50] Ø.330 [8.38] Ø.320 [8.13] Ø.200 [5.08]


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    Untitled

    Abstract: No abstract text available
    Text: SIEMENS KOM 2045 8-CHIP SILICON PHOTODIODE ARRAY VERY LOW DARK CURRENT FEATURES • Silicon Photodiode in Planar Technology • N-Si Material Anode, Front Contact Cathode, Back Contact • High Reliability • Low Noise • Detector for Low Luminance • No Testable Degradation


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    PDF 3X10-15 x1013 KOM2045 fl23t

    centronic osd100 6

    Abstract: Q0320 OSD50-4T QD320-4 LD20-4T MD100-4T MD25-4T OSD100-4T OSD200-4T OSD300-4T
    Text: CENTRONIC INC-, E-0 DIV HIE D • Silicon Photodetectors 1T3S2S0 0 0 0 0 3 b 2 s ICENB Series 4T T-M1-H7 Lower Cost Version of Series 4 The Series 4T photodetectors are a lower cost series offering good responsivity out to 1150 nm and low capacitance. They are restricted


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    PDF 1T152S0 00Q03b2 LD20-4T, MD25-4T, MD100-4T 200Max. LD20-4T* centronic osd100 6 Q0320 OSD50-4T QD320-4 LD20-4T MD25-4T OSD100-4T OSD200-4T OSD300-4T

    centronic osd100 6

    Abstract: MD25-3 LD20-3 MD100-3 OSD100-3 OSD200-3 OSD300-3 OSD50-3 QD100-3 QD320-3
    Text: CENTRONIC INC-, E-0 DIV 41E J> • n i S a S O GQD03Sb 7 « C E N B Silicon Photodetectors ^''4.^745' Series 3 Near IR Sensitive, High Speed The Series 3 photodetectors are designed for high speed and maximum responsivity in the near infra-red region. They are particularly


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    PDF 00DD3Sb 900nm LD20-3, MD25-3, MD100-3 LD25-3, LD20-3* centronic osd100 6 MD25-3 LD20-3 OSD100-3 OSD200-3 OSD300-3 OSD50-3 QD100-3 QD320-3

    VTB1012BI

    Abstract: VTB1013BI
    Text: StiE D BOBGbQi Q0Q1G3D IVCT SOT 'V ' 1 V T B 1 0 1 2 B I , 13BI VTB Process Photodiodes E G 8« 6 V A C T E C PACKAGE D IM EN SIO N S inch mm PRODUCT DESCRIPTIO N Small area planar silicon photodiode in a “flat" window, dual lead TO-46 pack­ age. The package incorporates an in­


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    PDF 3Q30b VTB1012BI, VTB1012BI 1001c, 4x1012 x1013 VTB1012BI VTB1013BI

    Untitled

    Abstract: No abstract text available
    Text: A M O D ELS 10, 20, 30, 40, 50, 60 N TC Th erm istors COMPANY OF TECHNO C o a te d FEATURES • Small size - conformal coated • Wide resistance range • Available in 7 different R-T curves • Configured for standard P.C. board mounting or assembly in probes


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    PDF

    x20100

    Abstract: j303001 J3030 D20200 J603001 R-T curves 601002 M202003 D30100 U2080
    Text: A MODELS 10. 20, 30, 40, 50, 60 NTC Therm istors COMPANY OF TECHNO Coated FEATURES • Small size - conformal coated • Wide resistance range • Available in 7 different R-T curves • Configured for standard P.C. board mounting or assembly in probes S T A N D A R D E L E C T R IC A L S P E C IF IC A T IO N S a n d D IM E N S IO N A L C O N F IG U R A T IO N S


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    PDF

    B5170-02

    Abstract: No abstract text available
    Text: Ge Photodiodes Cooled Types Achieves Higher S/N Ratio by Cooling By cooling Ge photodiodes, the dark current can be reduced effec­ tively and the S/N ratio improved. W hen cooling, it should be noted that the spectral response o f Ge photodiodes shifts slightly to the short wavelength region.


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    PDF avai10 B2614-03 B2614-05 X1014 B5170-02 B5170-05 B5170-02