XDR DRAM
Abstract: ODF10 K4Y54044UF
Text: K4Y5416 /08/04 4UF XDR DRAM 256Mbit XDR DRAM(F-die) 2M x 16(/8/4) bit x 8s Banks Version 1.0 Jan. 2005 Version 1.0 Jan. 2005 Page -1 K4Y5416(/08/04)4UF XDR DRAM Change History Version 0.1( July 2004) - Preliminary - First Copy - Based on the Rambus XDR DRAMTM Datasheet Version 0.81
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K4Y5416
256Mbit
XDR DRAM
ODF10
K4Y54044UF
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xdr rambus
Abstract: xdr elpida
Text: XDR DRAM 8x16Mx4 Advance Information Overview XDR DRAM CSP x4 Pinout The 512Mb Rambus XDR DRAM device is a CMOS DRAM organized as 128M words by 4 bits. The use of Differential Rambus Signaling Level DRSL technology permits 4000/ 3200/2400 Mb/s transfer rates while using conventional system and board design technologies. XDR DRAM devices are
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8x16Mx4
512Mb
DL-0211
xdr rambus
xdr elpida
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XDR Rambus
Abstract: 8x4Mx16
Text: XDR DRAM 8x4Mx16/8/4/2 Overview XDR DRAM CSP x16 Pinout The Rambus XDR™ DRAM device is a general-purpose highperformance memory device suitable for use in a broad range of applications, including computer memory, graphics, video, and any other application where high bandwidth and low
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8x4Mx16/8/4/2
512Mb
DL-0476
XDR Rambus
8x4Mx16
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E1819E20
Abstract: XDR 1gb EDX1032BBBG
Text: DATA SHEET 1G bits XDR DRAM EDX1032BBBG 32M words x 32 bits Overview Features The EDX1032BBBG is 1G bits XDR DRAM organized as 32M words × 32 bits. They are general-purpose high-performance memory devices suitable for use in a broad range of applications.
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EDX1032BBBG
EDX1032BBBG
EDX1032BBBG,
M01E1007
E1819E20
E1819E20
XDR 1gb
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PDF
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Untitled
Abstract: No abstract text available
Text: DATA SHEET 1G bits XDR DRAM EDX1032BBBG 32M words x 32 bits Overview Features The EDX1032BBBG is 1G bits XDR DRAM organized as 32M words × 32 bits. They are general-purpose high-performance memory devices suitable for use in a broad range of applications.
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EDX1032BBBG
EDX1032BBBG
M01E1007
E1819E20
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104BA
Abstract: No abstract text available
Text: Preliminary K4Y5002 /04/08/16 4UC XDRTM DRAM 512Mbit XDR DRAM(C-die) 4M x 16(/8/4/2) bit x 8s Banks Version 0.3 Aug 2005 XDR is a trademark of Rambus Inc. Version 0.3 Aug 2005 Page -1 Preliminary K4Y5002(/04/08/16)4UC XDRTM DRAM Change History Version 0.1 (May 2005) - Preliminary
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K4Y5002
512Mbit
dev37
104BA
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playstation 3
Abstract: playstation SONY PLAYSTATION 3 playstation controller XDR Rambus DDR2-667 DDR2-800 DDR333 DDR400 104BA
Text: XDR DRAM Industry demand for memory bandwidth in next-generation digital consumer electronics, such as high-definition digital television, home servers and high-end 3-D graphics applications, is growing rapidly as more content becomes available and as processor
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512Mb
E0428E60
playstation 3
playstation
SONY PLAYSTATION 3
playstation controller
XDR Rambus
DDR2-667
DDR2-800
DDR333
DDR400
104BA
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PDF
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Rambus XDR
Abstract: DDR3-1333 XDR Rambus DDR2 x32 ELPIDA DDR3 XDR DRAM DDR2-667 DDR2-800 DDR333 DDR400
Text: XDR DRAM Industry demand for memory bandwidth in next-generation digital consumer electronics, such as high-definition digital television, home servers and high-end 3-D graphics applications, is growing rapidly as more content becomes available and as processor performance becomes more robust.
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512Mb
x16-bit
GDDR3-1600
DDR3-1333
64MB/system
DDR2-667
DDR2-1066
Rambus XDR
DDR3-1333
XDR Rambus
DDR2 x32
ELPIDA DDR3
XDR DRAM
DDR2-667
DDR2-800
DDR333
DDR400
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Untitled
Abstract: No abstract text available
Text: K4Y50164UC K4Y50084UC K4Y50044UC K4Y50024UC XDRTM DRAM TM 512Mbit XDR DRAM C-die Revision 1.0 December 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K4Y50164UC
K4Y50084UC
K4Y50044UC
K4Y50024UC
512Mbit
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Rambus XDR
Abstract: XDR Rambus EDX5116ADSE EDX5116ADSE-3C-E 8x4Mx16
Text: DATA SHEET 512M bits XDR DRAM EDX5116ADSE 32M words x 16 bits • Low power • 1.8V Vdd • Programmable small-swing I/O signaling (DRSL) • Low power PLL/DLL design • Powerdown self-refresh support • Per pin I/O powerdown for narrow-width operation
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EDX5116ADSE
EDX5116ADSE
M01E0706
E1033E40
Rambus XDR
XDR Rambus
EDX5116ADSE-3C-E
8x4Mx16
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XDR Rambus
Abstract: EDX5116ACSE xdr elpida
Text: PRELIMINARY DATA SHEET 512M bits XDR DRAM EDX5116ACSE 32M words x 16 bits • Low power • 1.8V Vdd • Programmable small-swing I/O signaling (DRSL) • Low power PLL/DLL design • Powerdown self-refresh support • Per pin I/O powerdown for narrow-width operation
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EDX5116ACSE
EDX5116ACSE
E0881E20
XDR Rambus
xdr elpida
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EDX5116ADSE-3C-E
Abstract: EDX5116ADSE
Text: DATA SHEET 512M bits XDR DRAM EDX5116ADSE 32M words x 16 bits • Low power • 1.8V Vdd • Programmable small-swing I/O signaling (DRSL) • Low power PLL/DLL design • Powerdown self-refresh support • Per pin I/O powerdown for narrow-width operation
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EDX5116ADSE
EDX5116ADSE
M01E0706
E1033E30
EDX5116ADSE-3C-E
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PDF
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XDR Rambus
Abstract: 8H001
Text: PRELIMINARY DATA SHEET 512M bits XDR DRAM EDX5116ABSE 32M words x 16 bits • Low power • 1.8V Vdd • Programmable small-swing I/O signaling (DRSL) • Low power PLL/DLL design • Powerdown self-refresh support • Per pin I/O powerdown for narrow-width operation
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EDX5116ABSE
EDX5116ABSE
E0643E40
XDR Rambus
8H001
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET 512M bits XDR DRAM EDX5116ABSE 32M words x 16 bits • Low power • 1.8V Vdd • Programmable small-swing I/O signaling (DRSL) • Low power PLL/DLL design • Powerdown self-refresh support • Per pin I/O powerdown for narrow-width operation
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EDX5116ABSE
EDX5116ABSE
M01E0107
E0643E30
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DQ15d
Abstract: EDX5116ADSE-3C-E x5116 E1033E40 EDX5116ADSE T21at 8x4Mx16
Text: DATA SHEET 512M bits XDR DRAM EDX5116ADSE 32M words x 16 bits • Low power • 1.8V Vdd • Programmable small-swing I/O signaling (DRSL) • Low power PLL/DLL design • Powerdown self-refresh support • Per pin I/O powerdown for narrow-width operation
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EDX5116ADSE
EDX5116ADSE
M01E0706
E1033E40
DQ15d
EDX5116ADSE-3C-E
x5116
E1033E40
T21at
8x4Mx16
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K4Y50024UC
Abstract: K4Y50044UC K4Y50084UC K4Y50164UC
Text: K4Y50164UC K4Y50084UC K4Y50044UC K4Y50024UC XDRTM DRAM TM 512Mbit XDR DRAM C-die Revision 1.1 August 2006 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K4Y50164UC
K4Y50084UC
K4Y50044UC
K4Y50024UC
512Mbit
K4Y50024UC
K4Y50044UC
K4Y50084UC
K4Y50164UC
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K4Y50084UE-JCB3
Abstract: K4Y50164UE K4Y50164UE-JCB3
Text: K4Y50164UE K4Y50084UE K4Y50044UE K4Y50024UE XDRTM DRAM TM 512Mbit XDR DRAM E-die Revision 1.0 Feb., 2007 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K4Y50164UE
K4Y50084UE
K4Y50044UE
K4Y50024UE
512Mbit
K4Y50084UE-JCB3
K4Y50164UE
K4Y50164UE-JCB3
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014701 b
Abstract: 8x4Mx16
Text: PRELIMINARY DATA SHEET 512M bits XDR DRAM EDX5116ABSE 32M words x 16 bits • Low power • 1.8V Vdd • Programmable small-swing I/O signaling (DRSL) • Low power PLL/DLL design • Powerdown self-refresh support • Per pin I/O powerdown for narrow-width operation
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EDX5116ABSE
EDX5116ABSE
M01E0107
E0643E31
014701 b
8x4Mx16
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PDF
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8x4Mx16
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET 512M bits XDR DRAM EDX5116ABSE 32M words x 16 bits • Low power • 1.8V Vdd • Programmable small-swing I/O signaling (DRSL) • Low power PLL/DLL design • Powerdown self-refresh support • Per pin I/O powerdown for narrow-width operation
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EDX5116ABSE
EDX5116ABSE
M01E0107
E0643E20
8x4Mx16
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PDF
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EDX5116ACSE
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET 512M bits XDR DRAM EDX5116ACSE 32M words x 16 bits • Low power • 1.8V Vdd • Programmable small-swing I/O signaling (DRSL) • Low power PLL/DLL design • Powerdown self-refresh support • Per pin I/O powerdown for narrow-width operation
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EDX5116ACSE
EDX5116ACSE
M01E0107
E0881E10
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET 512M bits XDR DRAM EDX5116ABSE 32M words x 16 bits • Low power • 1.8V Vdd • Programmable small-swing I/O signaling (DRSL) • Low power PLL/DLL design • Powerdown self-refresh support • Per pin I/O powerdown for narrow-width operation
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EDX5116ABSE
EDX5116ABSE
M01E0107
E0643E40
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DDR3-1333
Abstract: DDR2-1066 ASIC XDR Rambus 104-FBGA DDR2-667 DDR2-800 DDR333 DDR400 ddr3 1333
Text: XDR DRAM 最新の高性能グラフィックスや高画質HDTV対応のホームサーバなど、先端の3D画像や高精細なデジタル 画像を扱うデジタル家電市場で、膨大なデータを瞬時に処理できるメモリの需要が高まっています。
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512Mb
512Mb
x16I/ODRAM6
400MHz,
500MHz,
600MHz
I/ODRSL200V
DDR333
104FBGA
DDR2-667
DDR3-1333
DDR2-1066
ASIC
XDR Rambus
104-FBGA
DDR2-800
DDR333
DDR400
ddr3 1333
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DDR2 x32
Abstract: ELPIDA DDR3 DDR3 DRAM layout ddr3 sdram chip datasheets 128mb 512MB xdr elpida DRAM elpida ELPIDA DDR2
Text: Digital Consumer DRAM DRAM Solutions for All Digital Consumer Device Needs In the transition from analog to digital, advanced digital consumer devices have become part of our daily lives, and we are now exchanging information in many ways. To help this transition, Elpida Memory offers a diverse lineup of DRAM architectures for digital consumer devices
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x32-bit
256Mb
x16-bit
229mA
258mA
172mA
256Mb
512Mb
E0652E90
DDR2 x32
ELPIDA DDR3
DDR3 DRAM layout
ddr3 sdram chip datasheets 128mb
512MB
xdr elpida
DRAM elpida
ELPIDA DDR2
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PDF
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sdram pin voltage
Abstract: DRAM elpida elpida SDRAM
Text: Digital Consumer DRAM DRAM Solutions for All Digital Consumer Device Needs In the transition from analog to digital, advanced digital consumer devices have become part of our daily lives, and we are now exchanging information in many ways. To help this transition, Elpida Memory offers a diverse lineup of DRAM architectures for digital consumer devices
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210mA
140mA
256Mb
512Mb
E0652E40
sdram pin voltage
DRAM elpida
elpida SDRAM
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