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    hy5118160b

    Abstract: WU33 HY5118160 D08-15 tcpt 200 HD-007 HY5118160BTC
    Text: •HYUNDAI H Y 5 1 1 8 1 6 0 B S e r ie s 1M x 16-bit CMOS DRAM with 2CAS DESCRIPTION The H Y5118160B is the new generation and fast dynam ic RAM organized 1,048,576x 16-bit. The Y5118160B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		16-bit Y5118160B 16-bit. HY5118160B ia069 1AD54-10-MAY95 HY5118160BJC HY5118160BSLJC WU33 HY5118160 D08-15 tcpt 200 HD-007 HY5118160BTC PDF

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    Abstract: No abstract text available
    Text: •HYUNDAI H Y 5 1 1 8 1 6 0 B ,H Y 5 1 1 6 1 6 0 B 1Mx16, Fast Page mode DESCRIPTION This fam ily is a 16M bit dynam ic RAM organized 1,048,576 x 16-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this


    OCR Scan     		1Mx16, 16-bit 1Mx16 PDF

    HY5118160B

    Abstract: No abstract text available
    Text: . « y u n p i n " * Y5118160B.HY5116160B 1Mx16, Fast Page mode DESCRIPTION This family is a 16M bit dynamic RAM organized 1 ,0 4 8,57 6 x 16-bit configuration with Fast P age mode C M O S DRA M s. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this


    OCR Scan     		HY5118160B HY5116160B 1Mx16, 16-bit PDF