ZG TRANSISTOR Search Results

ZG TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

ZG TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
200 khz amplifier Abstract: MA1113-1 Text: MA1113-1 MA1113-1 For PCS - 20W Power Amplifier DESCRIPTION 2. Electrical Performances Tc = +25°C, Vc = +25V, Vd = +10V, Vg = –6V, Zg = Zl = 50Ω OUTLINE DRAWING The MA1113-1 is a 20W power amplifier designed for PCS, which comprises 4 stages GaAs FET and 2 stages Si bipolar transistors,	Original	MA1113-1 MA1113-1 MA1113-1) 200 khz amplifier	PDF
MA1114-1 Abstract: No abstract text available Text: MA1114-1 MA1114-1 For PCS - 30W Power Amplifier DESCRIPTION 2. Electrical Performances Tc = +25°C, Vc = +25V, Vd = +10V, Vg = –6V, Zg = Zl = 50Ω OUTLINE DRAWING The MA1114-1 is a 30W power amplifier designed for PCS, which comprises 4 stages GaAs FET and 2 stages Si bipolar transistors,	Original	MA1114-1 MA1114-1 MA1114-1)	PDF
DCS1800 Abstract: MA1078-2 Text: MA1078-2 MA1078-2 For DCS1800 - 20W Power Amplifier DESCRIPTION 2. Electrical Performances Tc = +25°C, Vc = +24V, Vd = +10V, Vg = –6V, Zg = Zl = 50Ω OUTLINE DRAWING The MA1078-2 is a 20W power amplifier designed for DCS 1800, which comprises 4 stages GaAs FET and 2 stages Si bipolar	Original	MA1078-2 DCS1800 MA1078-2 MA1078-2)	PDF
component of 30w amplifier Abstract: DCS1800 MA1100-1 Text: MA1100-1 MA1100-1 For DCS1800 - 30W Power Amplifier DESCRIPTION 2. Electrical Performances Tc = +25°C, Vc = +25V, Vd = +10V, Vg = –6V, Zg = Zl = 50Ω OUTLINE DRAWING The MA1100-1 is a 30W power amplifier designed for DCS 1800, which comprises 4 stages GaAs FET and 2 stages Si bipolar	Original	MA1100-1 DCS1800 MA1100-1 MA1100-1) component of 30w amplifier	PDF
SC4105-06 Legend Abstract: TOM9008 Text: Available as: VOLTAGE CONTROLLED OSCILLATOR TOM9008, 4 Pin TO-8 T4 TON9008, 4 Pin Surface Mount (SM3) BXO9008, Connectorized Housing (H1) Features • Low Noise Bipolar Transistor ■ Operating Case Temp. -20 ºC to + 60 ºC ■ Environmental Screening Available	Original	OM9008, ON9008, BXO9008, SC4105-06 Legend TOM9008	PDF
RD70HVF1 Abstract: RD70HVF transistor d 1710 S 170 MOSFET TRANSISTOR vhf power transistor 50W 100OHM 50w rf power transistor d 2095 transistor MOSFET 2095 transistor Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD70HVF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W OUTLINE DESCRIPTION DRAWING 25.0+/-0.3 RD70HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers	Original	RD70HVF1 175MHz70W 520MHz RD70HVF1 175MHz 520MHz RD70HVF transistor d 1710 S 170 MOSFET TRANSISTOR vhf power transistor 50W 100OHM 50w rf power transistor d 2095 transistor MOSFET 2095 transistor	PDF
RD70HVF1 Abstract: RD70HVF1-101 RD70HVF vhf power transistor 50W uhf power transistor 50W MITSUBISHI RF POWER MOS FET S 170 MOSFET TRANSISTOR RF Transistor s-parameter vhf 100OHM Rf power transistor mosfet Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD70HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W OUTLINE DESCRIPTION DRAWING 25.0+/-0.3 RD70HVF1 is a MOS FET type transistor specifically	Original	RD70HVF1 175MHz70W 520MHz RD70HVF1 RD70HVF1-101 175MHz 520MHz RD70HVF1-101 RD70HVF vhf power transistor 50W uhf power transistor 50W MITSUBISHI RF POWER MOS FET S 170 MOSFET TRANSISTOR RF Transistor s-parameter vhf 100OHM Rf power transistor mosfet	PDF
MAR 703 MOSFET TRANSISTOR Abstract: RD15HVF1 RD15HVF1-101 MITSUBISHI RF POWER MOS FET D 1413 transistor micro strip line 100OHM rd15hvf11 rd15hvf transistor 1346 Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD15HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W OUTLINE 3.2+/-0.4 2 9+/-0.4 High power and High Gain: Pout>15W, Gp>14dB @Vdd=12.5V,f=175MHz	Original	RD15HVF1 175MHz520MHz 175MHz 520MHz RD15HVF1 MAR 703 MOSFET TRANSISTOR RD15HVF1-101 MITSUBISHI RF POWER MOS FET D 1413 transistor micro strip line 100OHM rd15hvf11 rd15hvf transistor 1346	PDF
Untitled Abstract: No abstract text available Text: IPI50R350CP CoolMOSTM Power Transistor Product Summary Features U฀ DK:GH฀;><IF:฀D;฀B:F>H฀/,+฀L฀.X U฀2AHF6฀ADK฀<6H:฀8=6F<: V !0฀8M[^Rh .) O R =L"`_#%^Rh )',.) *2 _< Q X%dia U฀"LHF:B:฀9J 9H฀F6H:9 U฀%><=฀E:6@฀8IFF:CH฀86E67>A>HM	Original	IPI50R350CP 86E67 688DF9 696EH	PDF
RD15HVF1-101 Abstract: RD15HVF1 D 1413 transistor D1560 tc 1601 a rd15hvf transistor marking zg TRANSISTOR 2229 transistor D 1557 6015d Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD15HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W OUTLINE 3.2±0.4 3.6±0.2 9±0.4 1.2±0.4 2.5 2.5 For output stage of high power amplifiers in VHF/UHF	Original	RD15HVF1 175MHz520MHz 175MHz 520MHz RD15HVF1 RD15HVF1-101 D 1413 transistor D1560 tc 1601 a rd15hvf transistor marking zg TRANSISTOR 2229 transistor D 1557 6015d	PDF
RD15HVF1 Abstract: rd15hvf RD15HV 175mhz gp 845 100OHM mitsubishi rf RD15HVF1 UHF POWER mosfet 3w Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD15HVF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor, 175MHz15W 520MHz,15W DESCRIPTION OUTLINE RD15HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers applica	Original	RD15HVF1 175MHz15W 520MHz RD15HVF1 175MHz 520MHz rd15hvf RD15HV 175mhz gp 845 100OHM mitsubishi rf RD15HVF1 UHF POWER mosfet 3w	PDF
RD02MVS1 Abstract: RD02MUS1B RD02MUS1 T112 mosfet 1412 6D20 mosfet 4501 Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD02MUS1B RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 6.0+/-0.15 1.0+/-0.05 2.0+/-0.05 1 4.9+/-0.15	Original	RD02MUS1B 175MHz 520MHz RD02MUS1B RD02MUS1 RD02MVS1 T112 mosfet 1412 6D20 mosfet 4501	PDF
RD02MUS2 Abstract: rd02mus TC 4863 DB T112 D 1652 transistor MOSFET RF POWER TRANSISTOR VHF transistor 0882 Text: MITSUBISHI RF POWER MOS FET RD02MUS2 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 6.0+/-0.15 1.0+/-0.05 2.0+/-0.05 1 4.9+/-0.15	Original	RD02MUS2 175MHz 520MHz RD02MUS2 rd02mus TC 4863 DB T112 D 1652 transistor MOSFET RF POWER TRANSISTOR VHF transistor 0882	PDF
RD02MUS1 Abstract: T112 transistor marking zg RD02MVS1 Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD02MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W RD02MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF po -wer amplifiers applications.	Original	RD02MUS1 175MHz 520MHz RD02MUS1 RD02MUS1-101 T112 transistor marking zg RD02MVS1	PDF

VTT9012 Abstract: VTT9112 VTT1010 VTT9313 Vcn-50V VTT1013 VTT1031 bd 7122 VTA3121 31T52 Text: V TT A -3B VTT PHOTODARLINGTONS VTA c h ip s VTA-C/VTT-C MATCHED LED-TRANSISTORS VTM PHOTOTRANSISTORS J^ E G zG V A C TE C OPTOELECTRONICS 10900 PAGE BLVD. ST. LOUIS, MO. 63132 USA • • • TWX 910-764-0811 PRODUCT DESCRIPTION FEATURES • • PHONE 314-423-4900	OCR Scan	82M63 VTT9012 VTT9112 VTT1010 VTT9313 Vcn-50V VTT1013 VTT1031 bd 7122 VTA3121 31T52	PDF
nf950 Abstract: transistor BF 37 transistor BF 236 TRANSISTOR 2SC 950 TRANSISTOR JC 539 2sc 1948 a Q62702-F553 transistor code mark NF Text: 25C D • 523SbQS QQQMS3‘i 4 Wi SI ZG f PNP Silicon Planar Transistor ' SIEMENS AKTIEN6ESELLSCHAF >39 BF767 0- BF 767 is a PNP silicon planar transistor including passivated surface in TO 2 36 plastic package 23 A 3 DIN 41869 . The transistor is particularly suitable for use in low-noise,	OCR Scan	023SbQS Q62702-F553 nf950 transistor BF 37 transistor BF 236 TRANSISTOR 2SC 950 TRANSISTOR JC 539 2sc 1948 a Q62702-F553 transistor code mark NF	PDF
RETICON ccd Abstract: No abstract text available Text: Advance Information P Series J ^ E G zG RETICO N 256-, 512-, 1024-, 2048-Element Photodiode Linear Array General Description The P Series linear image sensors offer a high performance solution to the increasing demands of advanced imaging appli cations. This product family provides unparalleled performance	OCR Scan	2048-Element 2048-elements, RL0256PAQ-011 RL0512PAQ-011 RL1024PAQ-011 RL2048PAQ-011 RETICON ccd	PDF
3055 transistor Abstract: transistor 3055 3055 2N3055 2SC 2276 M 3055 power transistor n3055 2N3066 power transistor 3055 33S3 Text: 2SC T> m flS3SbOS D004T11 * mZI ZG . T ~ 2 3 -/ 3 NPN Transistor for Powerful AF Output Stages 2 N 3055 -SIEMENS AKTIENGESELLSCHAF-2 N 3055 is a single diffused NPN silicon transistor in TO 3 case 3 A 2 DIN 41872). The collector is electrically connected to the case. The transistor is particularly suitable for	OCR Scan	D004T11 Q62702-U58 005ms aa35b05 3055 transistor transistor 3055 3055 2N3055 2SC 2276 M 3055 power transistor n3055 2N3066 power transistor 3055 33S3	PDF
2N5879 Abstract: No abstract text available Text: TYPES 2N5879, 2N5880 P-N-P SINGLE-DIFFUSED SILICON POWER TRANSISTORS a -I c-< f- "0 i—m m </> H ro zg C O •u FO R P O W ER -A M P L IFIE R A N D H IG H -SPEED -SW ITCH IN G A P P LIC A T IO N S D E S IG N E D FO R C O M P L E M E N T A R Y U S E W ITH 2N 5881, 2N5882	OCR Scan	2N5879, 2N5880 2N5882 2N5879	PDF
transistor zg Abstract: F689K BF689 zg transistor Text: Philips Semiconductors Product specification NPN 2 GHz wideband transistor DESCRIPTION BF689K PINNING NPN transistor in a plastic SOT54 TO-92 variant envelope. It is intended for application as an amplifier or oscillator in the VHF and UHF range. PIN DESCRIPTION	OCR Scan	BF689K F689K SB034 transistor zg BF689 zg transistor	PDF
transistor marking zg Abstract: marking z0 sot -6 Text: Y BFP193T/BFP193TW/BFP193TRW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ M Applications For low noise and high gain applications such as power amplifiers up to 2 GHz and for linear broadband ampli	OCR Scan	BFP193T/BFP193TW/BFP193TRW BFP193TW BFP193TRW BFP193T 20-Jan-99 D-74025 transistor marking zg marking z0 sot -6	PDF
transistor marking zg Abstract: sot-23 Transistor MARKING CODE ZG Text: SIEMENS BFR 193 NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 8GHz F=1.3dEl at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code	OCR Scan	900MHz OT-23 Q62702-F1218 BFR193 transistor marking zg sot-23 Transistor MARKING CODE ZG	PDF
sot-23 Transistor MARKING CODE ZG Abstract: ZG SOT23 transistor marking zg Text: SIEMENS BFR 280 NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2mA to 8mA • = 7.5GHz F = 1.5dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution!	OCR Scan	900MHz OT-23 Q62702-F1298 sot-23 Transistor MARKING CODE ZG ZG SOT23 transistor marking zg	PDF
Untitled Abstract: No abstract text available Text: Wtipl H E W L E T T mLftMP A C K A R D Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-31011 AT-31033 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • Am plifier Tested 900 MHz	OCR Scan	AT-31011 AT-31033 AT-31011: AT-31033: OT-143 AT-31011 AT-31033 5963-1862E 5965-1401E	PDF

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ZG TRANSISTOR Search Results

ZG TRANSISTOR Result Highlights (5)

ZG TRANSISTOR Datasheets Context Search

200 khz amplifier

MA1114-1

DCS1800

component of 30w amplifier

SC4105-06 Legend

RD70HVF1

RD70HVF1

MAR 703 MOSFET TRANSISTOR

Untitled

RD15HVF1-101

RD15HVF1

RD02MVS1

RD02MUS2

RD02MUS1

VTT9012

nf950

RETICON ccd

3055 transistor

2N5879

transistor zg

transistor marking zg

transistor marking zg

sot-23 Transistor MARKING CODE ZG

Untitled